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Materials Science

D-Index
76
Citations
33948
World Ranking
3213
National Ranking
898

Research.com Recognitions

  • 2007 - Fellow of Alfred P. Sloan Foundation

Overview

Lincoln J. Lauhon is affiliated with Northwestern University in the United States and has contributed extensively to the fields of Engineering and Materials Science. Their research encompasses key subfields such as Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, as well as Condensed Matter Physics.

The scientist's main topics of work include:

  • 2D Materials and Applications
  • Nanowire Synthesis and Applications
  • GaN-based semiconductor devices and materials
  • MXene and MAX Phase Materials
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Electronic and Structural Properties of Oxides

Frequent publication venues for Lincoln J. Lauhon's work include:

  • Journal of materials research/Pratt's guide to venture capital sources
  • ACS Nano
  • Nano Letters
  • Advanced Materials
  • ACS Applied Electronic Materials

Notable recent papers authored by or involving Lincoln J. Lauhon include:

  • Emergent Optoelectronic Properties of Mixed-Dimensional Heterojunctions, 2020, Accounts of Chemical Research
  • All-Printed Ultrahigh-Responsivity MoS2 Nanosheet Photodetectors Enabled by Megasonic Exfoliation, 2022, Advanced Materials
  • Light and complex 3D MoS2/graphene heterostructures as efficient catalysts for the hydrogen evolution reaction, 2020, Nanoscale
  • High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction, 2023, Proceedings of the National Academy of Sciences
  • Exaggerated sensitivity in photodetectors with internal gain, 2021, Nature Photonics

Lauhon has collaborated frequently with researchers such as Chair Weber, Sanjay Mathur, Judith L. MacManus-Driscoll, Awards Kupp, and Outreach Norton.

In 2007, Lincoln J. Lauhon was recognized as a Fellow of the Alfred P. Sloan Foundation.

Best Publications

  • Growth of nanowire superlattice structures for nanoscale photonics and electronics.

    Mark S. Gudiksen;Lincoln J. Lauhon;Jianfang Wang;David C. Smith

  • Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Epitaxial core–shell and core–multishell nanowire heterostructures

    Lincoln J. Lauhon;Mark S. Gudiksen;Deli Wang;Charles M. Lieber

  • Logic gates and computation from assembled nanowire building blocks.

    Yu Huang;Xiangfeng Duan;Yi Cui;Lincoln J. Lauhon

  • Diameter-controlled synthesis of single-crystal silicon nanowires

    Yi Cui;Lincoln J. Lauhon;Mark S. Gudiksen;Jianfang Wang

  • Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

    Joshua D. Wood;Spencer A. Wells;Deep Jariwala;Kan Sheng Chen

  • Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

    Vinod K. Sangwan;Deep Jariwala;In Soo Kim;Kan Sheng Chen

  • High-resolution detection of Au catalyst atoms in Si nanowires

    Jonathan E. Allen;Eric R. Hemesath;Daniel E. Perea;Jessica L. Lensch-Falk

  • Nanoscale wires and related devices

    Charles M. Lieber;Xiangfeng Duan;Yi Cui;Yu Huang

  • Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

    Deep Jariwala;Vinod K. Sangwan;Chung Chiang Wu;Pradyumna L. Prabhumirashi

  • Growth and transport properties of complementary germanium nanowire field-effect transistors

    Andrew B. Greytak;Lincoln J. Lauhon;Mark S. Gudiksen;Charles M. Lieber

  • Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire

    Daniel E. Perea;Eric R. Hemesath;Edwin J. Schwalbach;Jessica L. Lensch-Falk

  • Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

    Deep Jariwala;Vinod K. Sangwan;Dattatray J. Late;Dattatray J. Late;James E. Johns

  • Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

    Deep Jariwala;Vinod K. Sangwan;Dattatray J. Late;James E. Johns

  • Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2

    In Soo Kim;Vinod K. Sangwan;Deep Jariwala;Joshua D. Wood

  • Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS2

    Deep Jariwala;Sarah L. Howell;Kan Sheng Chen;Junmo Kang

  • Semiconductor nanowire heterostructures

    L. J. Lauhon;Mark S. Gudiksen;Charles M. Lieber

  • Demonstration of an Electrochemical Liquid Cell for Operando Transmission Electron Microscopy Observation of the Lithiation/Delithiation Behavior of Si Nanowire Battery Anodes

    Meng Gu;Lucas R. Parent;B. Layla Mehdi;Raymond R. Unocic

  • Direct observation of the quantum tunneling of single hydrogen atoms with a scanning tunneling microscope

    L. J. Lauhon;W. Ho

Frequent Co-Authors

Mark C. Hersam
Mark C. Hersam Northwestern University
Tobin J. Marks
Tobin J. Marks Northwestern University
Vinod K. Sangwan
Vinod K. Sangwan Northwestern University
Deep Jariwala
Deep Jariwala University of Pennsylvania
Wilson Ho
Wilson Ho University of California, Irvine
Yossi Rosenwaks
Yossi Rosenwaks Tel Aviv University
David N. Seidman
David N. Seidman Northwestern University
Teri W. Odom
Teri W. Odom Northwestern University
Gregor Koblmüller
Gregor Koblmüller Technical University of Munich
Howard E. Jackson
Howard E. Jackson University of Cincinnati

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