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Lincoln J. Lauhon

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 76 3211 3099 896 839 250 33948

Lincoln J. Lauhon publications per year

The chart shows the history of publications by Lincoln J. Lauhon between 1993 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Lincoln J. Lauhon published across 34 years, from 1993 to 2026, averaging 8.1 papers a year. Output peaked at 31 publications in 2013. 10 of the 277 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1993 to 2026. Vertical axis: number of publications, 0 to 31. Peak 31 publications in 2013. 1993: 1 publication 1994: 1 publication 1995: 2 publications 1996: 2 publications 1997: 1 publication 1998: 0 publications 1999: 2 publications 2000: 6 publications 2001: 6 publications 2002: 5 publications 2003: 3 publications 2004: 2 publications 2005: 4 publications 2006: 18 publications 2007: 5 publications 2008: 6 publications 2009: 19 publications 2010: 10 publications 2011: 14 publications 2012: 16 publications 2013: 31 publications 2014: 15 publications 2015: 12 publications 2016: 10 publications 2017: 13 publications 2018: 19 publications 2019: 12 publications 2020: 6 publications 2021: 6 publications 2022: 6 publications 2023: 10 publications 2024: 4 publications 2025: 9 publications 2026: 1 publication
1993 2026

277 publications in total across all disciplines

View publications per year as a table
Lincoln J. Lauhon: publications per year, 1993 to 2026
Year Publications
1993 1
1994 1
1995 2
1996 2
1997 1
1998 0
1999 2
2000 6
2001 6
2002 5
2003 3
2004 2
2005 4
2006 18
2007 5
2008 6
2009 19
2010 10
2011 14
2012 16
2013 31
2014 15
2015 12
2016 10
2017 13
2018 19
2019 12
2020 6
2021 6
2022 6
2023 10
2024 4
2025 9
2026 1
Total 277
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Lincoln J. Lauhon publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Lincoln J. Lauhon sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 250–269 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 250 publications — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726 250
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Lincoln J. Lauhon D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Lincoln J. Lauhon sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 76–77 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 76 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323 76
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Research.com Recognitions

  • 2007 - Fellow of Alfred P. Sloan Foundation

Overview

Lincoln J. Lauhon is affiliated with Northwestern University in the United States and has contributed extensively to the fields of Engineering and Materials Science. Their research encompasses key subfields such as Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, as well as Condensed Matter Physics.

The scientist's main topics of work include:

  • 2D Materials and Applications
  • Nanowire Synthesis and Applications
  • GaN-based semiconductor devices and materials
  • MXene and MAX Phase Materials
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Electronic and Structural Properties of Oxides

Frequent publication venues for Lincoln J. Lauhon's work include:

  • Journal of materials research/Pratt's guide to venture capital sources
  • ACS Nano
  • Nano Letters
  • Advanced Materials
  • ACS Applied Electronic Materials

Notable recent papers authored by or involving Lincoln J. Lauhon include:

  • Emergent Optoelectronic Properties of Mixed-Dimensional Heterojunctions, 2020, Accounts of Chemical Research
  • All-Printed Ultrahigh-Responsivity MoS2 Nanosheet Photodetectors Enabled by Megasonic Exfoliation, 2022, Advanced Materials
  • Light and complex 3D MoS2/graphene heterostructures as efficient catalysts for the hydrogen evolution reaction, 2020, Nanoscale
  • High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction, 2023, Proceedings of the National Academy of Sciences
  • Exaggerated sensitivity in photodetectors with internal gain, 2021, Nature Photonics

Lauhon has collaborated frequently with researchers such as Chair Weber, Sanjay Mathur, Judith L. MacManus-Driscoll, Awards Kupp, and Outreach Norton.

In 2007, Lincoln J. Lauhon was recognized as a Fellow of the Alfred P. Sloan Foundation.

Best Publications

  • Growth of nanowire superlattice structures for nanoscale photonics and electronics.

    Mark S. Gudiksen;Lincoln J. Lauhon;Jianfang Wang;David C. Smith

  • Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Epitaxial core–shell and core–multishell nanowire heterostructures

    Lincoln J. Lauhon;Mark S. Gudiksen;Deli Wang;Charles M. Lieber

  • Logic gates and computation from assembled nanowire building blocks.

    Yu Huang;Xiangfeng Duan;Yi Cui;Lincoln J. Lauhon

  • Diameter-controlled synthesis of single-crystal silicon nanowires

    Yi Cui;Lincoln J. Lauhon;Mark S. Gudiksen;Jianfang Wang

  • Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

    Joshua D. Wood;Spencer A. Wells;Deep Jariwala;Kan Sheng Chen

  • Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

    Vinod K. Sangwan;Deep Jariwala;In Soo Kim;Kan Sheng Chen

  • High-resolution detection of Au catalyst atoms in Si nanowires

    Jonathan E. Allen;Eric R. Hemesath;Daniel E. Perea;Jessica L. Lensch-Falk

  • Nanoscale wires and related devices

    Charles M. Lieber;Xiangfeng Duan;Yi Cui;Yu Huang

  • Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

    Deep Jariwala;Vinod K. Sangwan;Chung Chiang Wu;Pradyumna L. Prabhumirashi

  • Growth and transport properties of complementary germanium nanowire field-effect transistors

    Andrew B. Greytak;Lincoln J. Lauhon;Mark S. Gudiksen;Charles M. Lieber

  • Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire

    Daniel E. Perea;Eric R. Hemesath;Edwin J. Schwalbach;Jessica L. Lensch-Falk

  • Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

    Deep Jariwala;Vinod K. Sangwan;Dattatray J. Late;Dattatray J. Late;James E. Johns

  • Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

    Deep Jariwala;Vinod K. Sangwan;Dattatray J. Late;James E. Johns

  • Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2

    In Soo Kim;Vinod K. Sangwan;Deep Jariwala;Joshua D. Wood

  • Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS2

    Deep Jariwala;Sarah L. Howell;Kan Sheng Chen;Junmo Kang

  • Semiconductor nanowire heterostructures

    L. J. Lauhon;Mark S. Gudiksen;Charles M. Lieber

  • Demonstration of an Electrochemical Liquid Cell for Operando Transmission Electron Microscopy Observation of the Lithiation/Delithiation Behavior of Si Nanowire Battery Anodes

    Meng Gu;Lucas R. Parent;B. Layla Mehdi;Raymond R. Unocic

  • Direct observation of the quantum tunneling of single hydrogen atoms with a scanning tunneling microscope

    L. J. Lauhon;W. Ho

Frequent Co-Authors

Mark C. Hersam
Mark C. Hersam Northwestern University
Tobin J. Marks
Tobin J. Marks Northwestern University
Vinod K. Sangwan
Vinod K. Sangwan Northwestern University
Deep Jariwala
Deep Jariwala University of Pennsylvania
Wilson Ho
Wilson Ho University of California, Irvine
Yossi Rosenwaks
Yossi Rosenwaks Tel Aviv University
David N. Seidman
David N. Seidman Northwestern University
Teri W. Odom
Teri W. Odom Northwestern University
Gregor Koblmüller
Gregor Koblmüller Technical University of Munich
Howard E. Jackson
Howard E. Jackson University of Cincinnati

External Links

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Best Scientists Citing Lincoln J. Lauhon

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Mark C. Hersam

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Publications: 92

Zhong Lin Wang

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Publications: 64

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Xiangfeng Duan

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Publications: 57

Justin D. Holmes

Justin D. Holmes

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Publications: 54

Yoshio Bando

Yoshio Bando

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Publications: 44

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Qiang Gao

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Publications: 43

Johnny C. Ho

Johnny C. Ho

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Publications: 42

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Dmitri Golberg

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Publications: 41

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Chongwu Zhou

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Publications: 39

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Shuit-Tong Lee

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Publications: 38

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