2026 Yossi Rosenwaks: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	49	10546	10188	48	48	228	8731

Overview

Yossi Rosenwaks is affiliated with Tel Aviv University in Israel and has contributed extensively to research in engineering and materials science. Their main fields of study include engineering with a focus on electrical and electronic engineering and biomedical engineering, as well as materials science encompassing materials chemistry.

Their research concentrates on several subfields, notably:

Electrical and Electronic Engineering
Biomedical Engineering
Materials Chemistry
Bioengineering
Atomic and Molecular Physics, and Optics

Key topics of their work cover:

Gas Sensing Nanomaterials and Sensors
Nanowire Synthesis and Applications
Analytical Chemistry and Sensors
Advancements in Semiconductor Devices and Circuit Design
Advanced Chemical Sensor Technologies
Fullerene Chemistry and Applications
Semiconductor materials and devices

Recent publications include:

Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors, 2020, Nanomaterials
Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing, 2021, Chemosensors
Gap state distribution and Fermi level pinning in monolayer to multilayer MoS₂ field effect transistors, 2020, Nanoscale
Fullerene (C60) functionalized TiO2 nanotubes for conductometric sensing of formaldehyde, 2022, Sensors and Actuators B Chemical
Ultrasensitive hydrogen detection by electrostatically formed silicon nanowire decorated by palladium nanoparticles, 2021, Sensors and Actuators B Chemical

Frequent coauthors of Rosenwaks include Anwesha Mukherjee, Idan Shem Tov, A. Hazra, Ronen Dagan, and Zoe Mutsafi.

Their publications often appear in venues such as:

Sensors and Actuators B Chemical
Journal of Physics D Applied Physics
SSRN Electronic Journal
Nanomaterials
Chemosensors

Best Publications

Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)

Eran Edri;Saar Kirmayer;Alex Henning;Sabyasachi Mukhopadhyay

704
Citations
Why Lead Methylammonium Tri-Iodide Perovskite-Based Solar Cells Require a Mesoporous Electron Transporting Scaffold (but Not Necessarily a Hole Conductor)

Eran Edri;Saar Kirmayer;Alex Henning;Sabyasachi Mukhopadhyay

655
Citations
Hot-carrier cooling in GaAs: Quantum wells versus bulk.

Y Rosenwaks;MC Hanna;DH Levi;DM Szmyd

313
Citations
Kelvin probe force microscopy of semiconductor surface defects

Y. Rosenwaks;R. Shikler;Th. Glatzel;S. Sadewasser

250
Citations
Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution.

O. Tal;Y. Rosenwaks;Y. Preezant;N. Tessler

218
Citations
Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP

R. Cohen;L. Kronik;A. Shanzer;David Cahen

212
Citations
Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy

G. Rosenman;P. Urenski;A. Agronin;Y. Rosenwaks

207
Citations
Yellow luminescence and related deep levels in unintentionally doped GaN films

I. Shalish;L. Kronik;G. Segal;Y. Rosenwaks

200
Citations
Ferroelectric domain breakdown

Michel Molotskii;Alex Agronin;Pavel Urenski;Maria Shvebelman

183
Citations
Measurement of active dopant distribution and diffusion in individual silicon nanowires.

Elad Koren;Noel Berkovitch;Yossi Rosenwaks

170
Citations
Fabrication of a Photoelectronic Device by Direct Chemical Binding of the Photosynthetic Reaction Center Protein to Metal Surfaces

Ludmila Frolov;Yossi Rosenwaks;Chanoch Carmeli;Itai Carmeli

146
Citations
The electronic structure of metal oxide/organo metal halide perovskite junctions in perovskite based solar cells.

Alex Dymshits;Alex Henning;Gideon Segev;Yossi Rosenwaks

129
Citations
Dynamics of ferroelectric domain growth in the field of atomic force microscope

A. Agronin;M. Molotskii;Y. Rosenwaks;G. Rosenman

127
Citations
Reconstruction of electrostatic force microscopy images

E. Strassburg;A. Boag;Y. Rosenwaks

122
Citations
Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy

E. Koren;Y. Rosenwaks;J. E. Allen;E. R. Hemesath

119
Citations
Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

E. Koren;J. K. Hyun;U. Givan;E. R. Hemesath

113
Citations
Potential imaging of operating light-emitting devices using Kelvin force microscopy

R. Shikler;T. Meoded;N. Fried;Y. Rosenwaks

113
Citations
Fermi level pinning by gap states in organic semiconductors.

S. Yogev;R. Matsubara;M. Nakamura;U. Zschieschang

110
Citations
Kelvin probe force microscopy on III–V semiconductors: the effect of surface defects on the local work function

Th. Glatzel;S. Sadewasser;R. Shikler;Y. Rosenwaks

108
Citations
Ferroelectric domain inversion: The role of humidity

D. Dahan;M. Molotskii;G. Rosenman;Y. Rosenwaks

107
Citations
Resolution of Kelvin probe force microscopy in ultrahigh vacuum: comparison of experiment and simulation

S. Sadewasser;Th. Glatzel;R. Shikler;Y. Rosenwaks

102
Citations