His primary areas of study are Kelvin probe force microscope, Optoelectronics, Microscopy, Nanotechnology and Condensed matter physics. His Kelvin probe force microscope research includes themes of Nanowire, Conductive atomic force microscopy, Semiconductor and Analytical chemistry. His Optoelectronics research is multidisciplinary, relying on both Electrical conductor, Conductor and Thin film.
His work carried out in the field of Microscopy brings together such families of science as Point spread function and Resolution. His study in Nanotechnology is interdisciplinary in nature, drawing from both Bipolar junction transistor and Electron transfer. His studies examine the connections between Condensed matter physics and genetics, as well as such issues in Ferroelectricity, with regards to Hysteresis and Stoichiometry.
Yossi Rosenwaks mostly deals with Optoelectronics, Kelvin probe force microscope, Nanotechnology, Microscopy and Semiconductor. His research integrates issues of Surface photovoltage and Transistor in his study of Optoelectronics. His Kelvin probe force microscope study combines topics from a wide range of disciplines, such as Condensed matter physics, Scanning capacitance microscopy and Analytical chemistry.
His work deals with themes such as Thin film and Photocurrent, which intersect with Analytical chemistry. His studies deal with areas such as Chemical physics, Point spread function and Work function as well as Microscopy. His Semiconductor research incorporates elements of Band gap and Band bending.
Yossi Rosenwaks mainly focuses on Optoelectronics, Transistor, Nanowire, Kelvin probe force microscope and Semiconductor. His research in Optoelectronics intersects with topics in Nanowire transistors and Voltage. Yossi Rosenwaks has included themes like Silicon, Logic gate, Thermal conduction, Biasing and CMOS in his Transistor study.
Nanowire is the subject of his research, which falls under Nanotechnology. His Kelvin probe force microscope research is within the category of Microscopy. Within one scientific family, he focuses on topics pertaining to Work function under Semiconductor, and may sometimes address concerns connected to Microelectronics, Nanometre, Band bending and Quantum efficiency.
His primary scientific interests are in Nanowire, Optoelectronics, Kelvin probe force microscope, Transistor and Doping. Nanowire is a subfield of Nanotechnology that he explores. Many of his studies on Optoelectronics involve topics that are commonly interrelated, such as Voltage.
His Kelvin probe force microscope research incorporates themes from Monolayer and Condensed matter physics. His work on Threshold voltage as part of general Transistor study is frequently linked to Selectivity, therefore connecting diverse disciplines of science. His Doping research is multidisciplinary, incorporating perspectives in Chemical physics, Semiconductor, Molybdenum and Charge carrier.
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Why Lead Methylammonium Tri-Iodide Perovskite-Based Solar Cells Require a Mesoporous Electron Transporting Scaffold (but Not Necessarily a Hole Conductor)
Eran Edri;Saar Kirmayer;Alex Henning;Sabyasachi Mukhopadhyay.
Nano Letters (2014)
Why Lead Methylammonium Tri-Iodide Perovskite-Based Solar Cells Require a Mesoporous Electron Transporting Scaffold (but Not Necessarily a Hole Conductor)
Eran Edri;Saar Kirmayer;Alex Henning;Sabyasachi Mukhopadhyay.
Nano Letters (2014)
Hot-carrier cooling in GaAs: Quantum wells versus bulk.
Y Rosenwaks;MC Hanna;DH Levi;DM Szmyd.
Physical Review B (1993)
Kelvin probe force microscopy of semiconductor surface defects
Y. Rosenwaks;R. Shikler;Th. Glatzel;S. Sadewasser.
Physical Review B (2004)
Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution.
O. Tal;Y. Rosenwaks;Y. Preezant;N. Tessler.
Physical Review Letters (2005)
Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP
R. Cohen;L. Kronik;A. Shanzer;David Cahen.
Journal of the American Chemical Society (1999)
Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy
G. Rosenman;P. Urenski;A. Agronin;Y. Rosenwaks.
Applied Physics Letters (2003)
Yellow luminescence and related deep levels in unintentionally doped GaN films
I. Shalish;L. Kronik;G. Segal;Y. Rosenwaks.
Physical Review B (1999)
Ferroelectric domain breakdown
Michel Molotskii;Alex Agronin;Pavel Urenski;Maria Shvebelman.
Physical Review Letters (2003)
Measurement of active dopant distribution and diffusion in individual silicon nanowires.
Elad Koren;Noel Berkovitch;Yossi Rosenwaks.
Nano Letters (2010)
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