World's Best Scientists 2026 revealed!
Yossi Rosenwaks

Yossi Rosenwaks

D-Index & Metrics

Materials Science

D-Index
49
Citations
8731
World Ranking
10544
National Ranking
48

Yossi Rosenwaks publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Yossi Rosenwaks sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 228 publications — 40th percentile

40% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Yossi Rosenwaks D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Yossi Rosenwaks sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Yossi Rosenwaks is affiliated with Tel Aviv University in Israel and has contributed extensively to research in engineering and materials science. Their main fields of study include engineering with a focus on electrical and electronic engineering and biomedical engineering, as well as materials science encompassing materials chemistry.

Their research concentrates on several subfields, notably:

  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Materials Chemistry
  • Bioengineering
  • Atomic and Molecular Physics, and Optics

Key topics of their work cover:

  • Gas Sensing Nanomaterials and Sensors
  • Nanowire Synthesis and Applications
  • Analytical Chemistry and Sensors
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Chemical Sensor Technologies
  • Fullerene Chemistry and Applications
  • Semiconductor materials and devices

Recent publications include:

  • Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors, 2020, Nanomaterials
  • Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing, 2021, Chemosensors
  • Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors, 2020, Nanoscale
  • Fullerene (C60) functionalized TiO2 nanotubes for conductometric sensing of formaldehyde, 2022, Sensors and Actuators B Chemical
  • Ultrasensitive hydrogen detection by electrostatically formed silicon nanowire decorated by palladium nanoparticles, 2021, Sensors and Actuators B Chemical

Frequent coauthors of Rosenwaks include Anwesha Mukherjee, Idan Shem Tov, A. Hazra, Ronen Dagan, and Zoe Mutsafi.

Their publications often appear in venues such as:

  • Sensors and Actuators B Chemical
  • Journal of Physics D Applied Physics
  • SSRN Electronic Journal
  • Nanomaterials
  • Chemosensors

Best Publications

  • Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)

    Eran Edri;Saar Kirmayer;Alex Henning;Sabyasachi Mukhopadhyay

  • Why Lead Methylammonium Tri-Iodide Perovskite-Based Solar Cells Require a Mesoporous Electron Transporting Scaffold (but Not Necessarily a Hole Conductor)

    Eran Edri;Saar Kirmayer;Alex Henning;Sabyasachi Mukhopadhyay

  • Hot-carrier cooling in GaAs: Quantum wells versus bulk.

    Y Rosenwaks;MC Hanna;DH Levi;DM Szmyd

  • Kelvin probe force microscopy of semiconductor surface defects

    Y. Rosenwaks;R. Shikler;Th. Glatzel;S. Sadewasser

  • Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution.

    O. Tal;Y. Rosenwaks;Y. Preezant;N. Tessler

  • Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP

    R. Cohen;L. Kronik;A. Shanzer;David Cahen

  • Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy

    G. Rosenman;P. Urenski;A. Agronin;Y. Rosenwaks

  • Yellow luminescence and related deep levels in unintentionally doped GaN films

    I. Shalish;L. Kronik;G. Segal;Y. Rosenwaks

  • Ferroelectric domain breakdown

    Michel Molotskii;Alex Agronin;Pavel Urenski;Maria Shvebelman

  • Measurement of active dopant distribution and diffusion in individual silicon nanowires.

    Elad Koren;Noel Berkovitch;Yossi Rosenwaks

  • Fabrication of a Photoelectronic Device by Direct Chemical Binding of the Photosynthetic Reaction Center Protein to Metal Surfaces

    Ludmila Frolov;Yossi Rosenwaks;Chanoch Carmeli;Itai Carmeli

  • The electronic structure of metal oxide/organo metal halide perovskite junctions in perovskite based solar cells.

    Alex Dymshits;Alex Henning;Gideon Segev;Yossi Rosenwaks

  • Dynamics of ferroelectric domain growth in the field of atomic force microscope

    A. Agronin;M. Molotskii;Y. Rosenwaks;G. Rosenman

  • Reconstruction of electrostatic force microscopy images

    E. Strassburg;A. Boag;Y. Rosenwaks

  • Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy

    E. Koren;Y. Rosenwaks;J. E. Allen;E. R. Hemesath

  • Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

    E. Koren;J. K. Hyun;U. Givan;E. R. Hemesath

  • Potential imaging of operating light-emitting devices using Kelvin force microscopy

    R. Shikler;T. Meoded;N. Fried;Y. Rosenwaks

  • Fermi level pinning by gap states in organic semiconductors.

    S. Yogev;R. Matsubara;M. Nakamura;U. Zschieschang

  • Kelvin probe force microscopy on III–V semiconductors: the effect of surface defects on the local work function

    Th. Glatzel;S. Sadewasser;R. Shikler;Y. Rosenwaks

  • Ferroelectric domain inversion: The role of humidity

    D. Dahan;M. Molotskii;G. Rosenman;Y. Rosenwaks

  • Resolution of Kelvin probe force microscopy in ultrahigh vacuum: comparison of experiment and simulation

    S. Sadewasser;Th. Glatzel;R. Shikler;Y. Rosenwaks

Frequent Co-Authors

Gil Rosenman
Gil Rosenman Tel Aviv University
Lincoln J. Lauhon
Lincoln J. Lauhon Northwestern University
Abraham Kribus
Abraham Kribus Tel Aviv University
Amir Boag
Amir Boag Tel Aviv University
Dan Huppert
Dan Huppert Tel Aviv University
Arthur J. Nozik
Arthur J. Nozik University of Colorado Boulder
Sascha Sadewasser
Sascha Sadewasser International Iberian Nanotechnology Laboratory
David Cahen
David Cahen Weizmann Institute of Science
Antoine Kahn
Antoine Kahn Princeton University
Nir Tessler
Nir Tessler Technion – Israel Institute of Technology

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