World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
117
Citations
47806
World Ranking
553
National Ranking
199

Antoine Kahn publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Antoine Kahn sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 478 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Antoine Kahn D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Antoine Kahn sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 117 D-Index — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Antoine Kahn is affiliated with Princeton University in the United States, where their research focuses primarily on engineering and materials science. Their work spans various subfields including electrical and electronic engineering, materials chemistry, polymers and plastics, electronic, optical and magnetic materials, as well as renewable energy, sustainability and the environment.

The scientist's published research covers a range of topics with emphasis on perovskite materials and applications. Additional main topics include conducting polymers and applications, organic electronics and photovoltaics, quantum dots synthesis and properties, organic light-emitting diodes research, chalcogenide semiconductor thin films, and 2D materials and applications.

Antoine Kahn has contributed to numerous influential papers. Recent publications include:

  • Adduct-based p-doping of organic semiconductors, 2021, Nature Materials
  • Ultraviolet Photoemission Spectroscopy and Kelvin Probe Measurements on Metal Halide Perovskites: Advantages and Pitfalls, 2020, Advanced Energy Materials
  • Improved Absorber Phase Stability, Performance, and Lifetime in Inorganic Perovskite Solar Cells with Alkyltrimethoxysilane Strain-Release Layers at the Perovskite/TiO2 Interface, 2022, ACS Energy Letters
  • Triiodide Attacks the Organic Cation in Hybrid Lead Halide Perovskites: Mechanism and Suppression, 2023, Advanced Materials
  • Origins of Photoluminescence Instabilities at Halide Perovskite/Organic Hole Transport Layer Interfaces, 2023, Journal of the American Chemical Society

Frequent coauthors of Antoine Kahn include:

  • Barry P. Rand
  • Xinjue Zhong
  • Hannah L. Smith
  • Yueh-Lin Loo
  • Hong Li

Antoine Kahn's work has appeared recurrently in several scientific publication venues, including:

  • Advanced Energy Materials
  • Advanced Materials
  • ACS Energy Letters
  • The Cambridge Structural Database
  • Advanced Functional Materials

Best Publications

  • A Universal Method to Produce Low―Work Function Electrodes for Organic Electronics

    Yinhua Zhou;Canek Fuentes-Hernandez;Jaewon Shim;Jens Meyer

  • Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications

    Jens Meyer;Sami Hamwi;Michael Kröger;Wolfgang Kowalsky

  • Electronic structure and electrical properties of interfaces between metals and π-conjugated molecular films

    Antoine Kahn;Norbert Koch;Weiying Gao

  • Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices

    C. C. Wu;C. I. Wu;J. C. Sturm;A. Kahn

  • Charge-separation energy in films of π-conjugated organic molecules

    I.G. Hill;A. Kahn;Z.G. Soos;R.A. Pascal

  • Fermi level, work function and vacuum level

    Antoine Kahn

  • Electron Energetics at Surfaces and Interfaces: Concepts and Experiments†

    David Cahen;Antoine Kahn

  • Energetics of metal–organic interfaces: New experiments and assessment of the field

    Jaehyung Hwang;Alan Wan;Antoine Kahn

  • Interface energetics in organo-metal halide perovskite-based photovoltaic cells

    Philip Schulz;Eran Edri;Saar Kirmayer;Gary Hodes

  • Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films

    M. Kröger;S. Hamwi;J. Meyer;T. Riedl

  • Conjugated organic molecules on metal versus polymer electrodes: Demonstration of a key energy level alignment mechanism

    N. Koch;Antoine Kahn;J. Ghijsen;J. J. Pireaux

  • Molecular level alignment at organic semiconductor-metal interfaces

    I. G. Hill;A. Rajagopal;A. Kahn;Y. Hu

  • P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide

    Michael Kröger;Sami Hamwi;Jens Meyer;Thomas Riedl

  • Evidence for near-Surface NiOOH Species in Solution-Processed NiOx Selective Interlayer Materials: Impact on Energetics and the Performance of Polymer Bulk Heterojunction Photovoltaics

    Erin L. Ratcliff;Jens Meyer;K. Xerxes Steirer;Andres Garcia

  • The Vibrational Reorganization Energy in Pentacene: Molecular Influences on Charge Transport

    Nadine E. Gruhn;Demetrio A. da Silva Filho;Tonja G. Bill;Massimo Malagoli

  • Halide Perovskites: Is It All about the Interfaces?

    Philip Schulz;Philip Schulz;David Cahen;Antoine Kahn

  • Lithium doping of semiconducting organic charge transport materials

    G. Parthasarathy;C. Shen;A. Kahn;S. R. Forrest

  • Hybrid Organic–Inorganic Perovskites (HOIPs): Opportunities and Challenges

    Joseph Berry;Tonio Buonassisi;David A. Egger;Gary Hodes

  • Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental–Theoretical Study

    James Endres;David A. Egger;Michael Kulbak;Ross A. Kerner

  • Controlled p-doping of zinc phthalocyanine by coevaporation with tetrafluorotetracyanoquinodimethane: A direct and inverse photoemission study

    Weiying Gao;Antoine Kahn

  • Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA.

    Y. Hirose;A. Kahn;V. Aristov;V. Aristov;P. Soukiassian;P. Soukiassian

Frequent Co-Authors

Seth R. Marder
Seth R. Marder University of Colorado Boulder
Stephen Barlow
Stephen Barlow Georgia Institute of Technology
Jeffrey Schwartz
Jeffrey Schwartz Princeton University
David Cahen
David Cahen Weizmann Institute of Science
Yueh-Lin Loo
Yueh-Lin Loo Princeton University
Norbert Koch
Norbert Koch Humboldt-Universität zu Berlin
Ian G. Hill
Ian G. Hill Dalhousie University
Jean-Luc Brédas
Jean-Luc Brédas University of Arizona
Barry P. Rand
Barry P. Rand Princeton University
Giorgio Margaritondo
Giorgio Margaritondo École Polytechnique Fédérale de Lausanne

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