World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
91
Citations
31808
World Ranking
1601
National Ranking
500

Yongli Gao publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Yongli Gao sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 548 publications — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Yongli Gao D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Yongli Gao sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 91 D-Index — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1989 - Fellow of Alfred P. Sloan Foundation

Overview

Yongli Gao is affiliated with the University of Rochester in the United States and has made significant contributions to the fields of Engineering and Materials Science through extensive research activities. Their academic work bridges multiple disciplines including Electrical and Electronic Engineering, Materials Chemistry, and Polymers and Plastics, with additional involvement in Atomic and Molecular Physics, Optics, and Biomedical Engineering.

Their research topics focus primarily on Perovskite Materials and Applications, Conducting Polymers and Applications, and 2D Materials and Applications. Other notable topics include Quantum Dots Synthesis and Properties, Chalcogenide Semiconductor Thin Films, Solid-state Spectroscopy and Crystallography, and Advanced Memory and Neural Computing.

Yongli Gao has coauthored numerous scientific papers in collaboration with a range of frequent colleagues including Haipeng Xie, Han Huang, Dongmei Niu, Yuan Zhao, and Conghua Zhou. These collaborations reflect a sustained research network and joint efforts spanning various technical domains.

Their work has been published multiple times in established scientific venues. Notable publication venues where they have contributed repeatedly include:

  • Results in Physics
  • Applied Physics Letters
  • Solar RRL
  • Physical Chemistry Chemical Physics
  • Crystals

Some selected recent papers by Yongli Gao include:

  • "Reducing Surface Halide Deficiency for Efficient and Stable Iodide-Based Perovskite Solar Cells", 2020, Journal of the American Chemical Society
  • "Accelerating CO2 Electroreduction to Multicarbon Products via Synergistic Electric-Thermal Field on Copper Nanoneedles", 2022, Journal of the American Chemical Society
  • "Interfacial Molecular Doping of Metal Halide Perovskites for Highly Efficient Solar Cells", 2020, Advanced Materials
  • "Mobile iodides capture for highly photolysis- and reverse-bias-stable perovskite solar cells", 2024, Nature Materials
  • "Efficient monolithic all-perovskite tandem solar modules with small cell-to-module derate", 2022, Nature Energy

Among their academic distinctions, Yongli Gao was recognized as a Fellow of the Alfred P. Sloan Foundation in 1989.

Best Publications

  • Sensitive X-ray detectors made of methylammonium lead tribromide perovskite single crystals

    Haotong Wei;Yanjun Fang;Yanjun Fang;Padhraic Mulligan;William Chuirazzi

  • Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

    Zhengguo Xiao;Cheng Bi;Yuchuan Shao;Qingfeng Dong

  • Cation and anion immobilization through chemical bonding enhancement with fluorides for stable halide perovskite solar cells

    Nengxu Li;Shuxia Tao;Yihua Chen;Xiuxiu Niu

  • Stabilizing halide perovskite surfaces for solar cell operation with wide-bandgap lead oxysalts.

    Shuang Yang;Shuang Yang;Shangshang Chen;Edoardo Mosconi;Yanjun Fang;Yanjun Fang

  • Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy

    Yongsup Park;Vien-E Choong;Yongli Gao;Bing R. Hsieh

  • Qualifying composition dependent p and n self-doping in CH3NH3PbI3

    Qi Wang;Yuchuan Shao;Haipeng Xie;Lu Lyu

  • Platinum-Maghemite Core−Shell Nanoparticles Using a Sequential Synthesis

    Xiaowei Teng;Donald Black;Neil J. Watkins;Yongli Gao

  • Interfacial chemistry of Alq3 and LiF with reactive metals

    M.G. Mason;Ching Wan Tang;L.S. Hung;P. Raychaudhuri

  • High Performance All-Polymer Solar Cell via Polymer Side-Chain Engineering

    Yan Zhou;Tadanori Kurosawa;Wei Ma;Yikun Guo

  • Understanding the formation and evolution of interdiffusion grown organolead halide perovskite thin films by thermal annealing

    Cheng Bi;Yuchuan Shao;Yongbo Yuan;Zhengguo Xiao

  • Determination of spin injection and transport in a ferromagnet/organic semiconductor heterojunction by two-photon photoemission

    Mirko Cinchetti;Kathrin Heimer;Jan-Peter Wüstenberg;Oleksiy Andreyev

  • Light-Induced Degradation of CH3NH3PbI3 Hybrid Perovskite Thin Film

    Youzhen Li;Xuemei Xu;Congcong Wang;Ben Ecker

  • Electronic structure symmetry of interfaces between pentacene and metals

    N. J. Watkins;Li Yan;Yongli Gao

  • A photoelectron spectroscopy study on the indium tin oxide treatment by acids and bases

    F. Nüesch;L. J. Rothberg;E. W. Forsythe;Quoc Toan Le

  • 2D MoS 2 Neuromorphic Devices for Brain-Like Computational Systems.

    Jie Jiang;Junjie Guo;Xiang Wan;Xiang Wan;Yi Yang;Yi Yang

  • Reducing Surface Halide Deficiency for Efficient and Stable Iodide-Based Perovskite Solar Cells.

    Wu-Qiang Wu;Wu-Qiang Wu;Peter N Rudd;Zhenyi Ni;Charles Henry Van Brackle

  • Surface analytical studies of interfaces in organic semiconductor devices

    Yongli Gao

  • Energy level evolution of air and oxygen exposed molybdenum trioxide films

    Irfan;Huanjun Ding;Yongli Gao;Cephas Small

  • Theoretical predictions on the electronic structure and charge carrier mobility in 2D Phosphorus sheets

    Jin Xiao;Mengqiu Long;Mengqiu Long;Xiaojiao Zhang;Jun Ouyang

  • Time-resolved two-photon photoemission from Cu(100): Energy dependence of electron relaxation.

    C. A. Schmuttenmaer;M. Aeschlimann;H. E. Elsayed-Ali;R. J. D. Miller

Frequent Co-Authors

Junliang Yang
Junliang Yang Central South University
Ching Wan Tang
Ching Wan Tang Hong Kong University of Science and Technology
Han Huang
Han Huang Central South University
J. H. Weaver
J. H. Weaver University of Illinois at Urbana-Champaign
Jun He
Jun He Central South University
Jia Sun
Jia Sun Central South University
Yongbo Yuan
Yongbo Yuan Central South University
Jinsong Huang
Jinsong Huang University of North Carolina at Chapel Hill
Mengqiu Long
Mengqiu Long Central South University
Franky So
Franky So North Carolina State University

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