The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Barry P. Rand sits on this spectrum.
This scientist: 286 publications — 56th percentile
56% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Barry P. Rand sits on this spectrum.
This scientist: 79 D-Index — 79th percentile
79% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Barry P. Rand is affiliated with Princeton University in the United States. Their research primarily focuses on engineering and materials science, with a strong emphasis on electrical and electronic engineering and materials chemistry as key subfields. Their work also extends into polymers and plastics, atomic and molecular physics and optics, and renewable energy, sustainability, and the environment.
The main research topics covered by Barry P. Rand include perovskite materials and applications, quantum dots synthesis and properties, organic electronics and photovoltaics, organic light-emitting diodes research, chalcogenide semiconductor thin films, conducting polymers and applications, and solid-state spectroscopy and crystallography.
Barry P. Rand has published extensively in various scientific venues. The most frequent publication outlets include:
Some of the notable recent papers authored or co-authored by Barry P. Rand are:
Frequent collaborators in Barry P. Rand's research include Zhaojian Xu, Antoine Kahn, Lianfeng Zhao, Ross A. Kerner, and Kwangdong Roh.
Zhengguo Xiao;Ross A. Kerner;Lianfeng Zhao;Nhu L. Tran
Barry P. Rand;Diana P. Burk;Stephen R. Forrest
Li Na Quan;Barry P. Rand;Richard H. Friend;Subodh Gautam Mhaisalkar
Barry P. Rand;Jan Genoe;Paul Heremans;Jef Poortmans
Jiangeng Xue;Soichi Uchida;Barry P. Rand;Stephen R. Forrest
Jiangeng Xue;Soichi Uchida;Barry P. Rand;Stephen R. Forrest
Barry P. Rand;Peter Peumans;Peter Peumans;Stephen R. Forrest
Jiangeng Xue;Barry P. Rand;Soichi Uchida;Stephen R. Forrest
Kjell Cnops;Barry P. Rand;David Cheyns;Bregt Verreet
Kristin L. Mutolo;Elizabeth I. Mayo;Barry P. Rand;Stephen R. Forrest
Paul Heremans;David Cheyns;Barry P Rand
Yong Lin Kong;Ian A. Tamargo;Hyoungsoo Kim;Blake N. Johnson
James Endres;David A. Egger;Michael Kulbak;Ross A. Kerner
Yufei Jia;Ross A. Kerner;Alex J. Grede;Barry P. Rand
Soichi Uchida;Jiangeng Xue;Barry P. Rand;Stephen R. Forrest
Barry P. Rand;David Cheyns;Karolien Vasseur;Noel C. Giebink
He Tian;Lianfeng Zhao;Xuefeng Wang;Yao Wen Yeh
Claudio Girotto;Eszter Voroshazi;David Cheyns;Paul Heremans
Jiangeng Xue;Barry P. Rand;Soichi Uchida;Stephen R. Forrest
B. Bernardo;D. Cheyns;B. Verreet;R. D. Schaller
D Cheyns;Jozef Poortmans;Paul Heremans;C Deibel
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