World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
51
Citations
14416
World Ranking
9747
National Ranking
172

Ian G. Hill publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Ian G. Hill sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 144 publications — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Ian G. Hill D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Ian G. Hill sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Ian G. Hill is affiliated with Dalhousie University in Canada and has contributed to the field of engineering, particularly electrical and electronic engineering. Their research focuses on topics including organic electronics and photovoltaics, conducting polymers and applications, radiation detection and scintillator technologies, analytical chemistry and sensors, radiation effects in electronics, thin-film transistor technologies, and chalcogenide semiconductor thin films.

Their recent publications demonstrate a range of investigations across these domains. Notable papers include:

  • Contact Engineering Using Manganese, Chromium, and Bathocuproine in Group 14 Phthalocyanine Organic Thin-Film Transistors, 2020, ACS Applied Electronic Materials
  • Optoelectronic and material properties of solution-processed Earth-abundant Cu2BaSn(S, Se)4 films for solar cell applications, 2020, Nano Energy
  • Studies of the SEI layers in Li(Ni0.5Mn0.3Co0.2)O2/Artificial Graphite Cells after Formation and after Cycling, 2020, Journal of The Electrochemical Society
  • Water Compatible Direct (Hetero)arylation Polymerization of PPDT2FBT: A Pathway Towards Large-Scale Production of Organic Solar Cells, 2020, Asian Journal of Organic Chemistry
  • Optoelectronic property comparison for isostructural Cu2BaGeSe4 and Cu2BaSnS4 solar absorbers, 2021, Journal of Materials Chemistry A

Frequent coauthors contributing significantly alongside Ian G. Hill include:

  • Alasdair Syme (9 publications)
  • Michael A. Hupman (6 publications)
  • Ryan Ambrose (5 publications)
  • Irina Valitova (5 publications)
  • Alexandria Mitchell (3 publications)

The scientist's research is disseminated through various academic journals, with multiple publications appearing in:

  • Organic Electronics (3 publications)
  • Medical Physics (3 publications)
  • Journal of The Electrochemical Society (2 publications)
  • Journal of Chemical Technology & Biotechnology (2 publications)
  • ACS Applied Electronic Materials (1 publication)

The scope of Ian G. Hill's work spans multiple subfields within engineering, notably electrical and electronic engineering, radiation, materials chemistry, polymers and plastics, and bioengineering. This multidisciplinary engagement reflects a broad technical expertise and interaction with various materials and processes relevant to electronic and photovoltaic devices. Their contributions to understanding material properties, polymerization techniques, and device engineering are documented through their published works.

Best Publications

  • Perovskite–fullerene hybrid materials suppress hysteresis in planar diodes

    Jixian Xu;Andrei Buin;Alexander H. Ip;Wei Li

  • Charge-separation energy in films of π-conjugated organic molecules

    I.G. Hill;A. Kahn;Z.G. Soos;R.A. Pascal

  • Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates

    C. D Sheraw;L. Zhou;J. R Huang;D. J Gundlach

  • Long cycle life and dendrite-free lithium morphology in anode-free lithium pouch cells enabled by a dual-salt liquid electrolyte

    Rochelle Weber;Rochelle Weber;Matthew Genovese;A. J. Louli;Samuel Hames

  • Thin-film preparation and characterization of Cs3Sb2I9: A lead-free layered perovskite semiconductor

    Bayrammurad Saparov;Feng Hong;Feng Hong;Jon Paul Sun;Hsin Sheng Duan

  • Air-stable n-type colloidal quantum dot solids

    Zhijun Ning;Oleksandr Voznyy;Jun Pan;Sjoerd H. Hoogland

  • Molecular level alignment at organic semiconductor-metal interfaces

    I. G. Hill;A. Rajagopal;A. Kahn;Y. Hu

  • Thin-Film Deposition and Characterization of a Sn-Deficient Perovskite Derivative Cs2SnI6

    Bayrammurad Saparov;Jon-Paul Sun;Weiwei Meng;Zewen Xiao

  • Organic semiconductor interfaces: electronic structure and transport properties

    I. G. Hill;D. Milliron;Jeffrey Schwartz;Antoine Kahn

  • Recent advances of non-fullerene, small molecular acceptors for solution processed bulk heterojunction solar cells

    Ala'a F. Eftaiha;Jon-Paul Sun;Ian G. Hill;Gregory C. Welch

  • Surface oxidation activates indium tin oxide for hole injection

    D. J. Milliron;I. G. Hill;C. Shen;A. Kahn

  • Improved organic thin-film transistor performance using novel self-assembled monolayers

    M. McDowell;I. G. Hill;J. E. McDermott;S. L. Bernasek

  • Synthesis, Self-Assembly, and Solar Cell Performance of N-Annulated Perylene Diimide Non-Fullerene Acceptors

    Arthur D. Hendsbee;Jon Paul Sun;Wai Kit Law;He Henry Yan

  • Organic semiconductor heterointerfaces containing bathocuproine

    I. G. Hill;Antoine Kahn

  • Metal-dependent charge transfer and chemical interaction at interfaces between 3,4,9,10-perylenetetracarboxylic bisimidazole and gold, silver and magnesium

    I. G. Hill;Jeffrey Schwartz;Antoine Kahn

  • Energy level alignment at interfaces of organic semiconductor heterostructures

    I. G. Hill;A. Kahn

  • Effect of Sulfate Electrolyte Additives on LiNi1/3Mn1/3Co1/3O2/Graphite Pouch Cell Lifetime: Correlation between XPS Surface Studies and Electrochemical Test Results

    Lénaïc Madec;Jian Xia;Rémi Petibon;Kathlyne J. Nelson

  • Occupied and unoccupied electronic levels in organic π-conjugated molecules: comparison between experiment and theory

    I.G. Hill;A. Kahn;J. Cornil;D.A. dos Santos

  • Initial stages of metal/organic semiconductor interface formation

    I. G. Hill;A. J. Mäkinen;Z. H. Kafafi

  • Key components to the recent performance increases of solution processed non-fullerene small molecule acceptors

    Seth M. McAfee;Jessica M. Topple;Ian G. Hill;Gregory C. Welch

Frequent Co-Authors

Antoine Kahn
Antoine Kahn Princeton University
Gregory C. Welch
Gregory C. Welch University of Calgary
Jeff Dahn
Jeff Dahn Dalhousie University
Jeffrey Schwartz
Jeffrey Schwartz Princeton University
Zakya H. Kafafi
Zakya H. Kafafi Lehigh University
David B. Mitzi
David B. Mitzi Duke University
David J. Gundlach
David J. Gundlach National Institute of Standards and Technology
Constantinos C. Stoumpos
Constantinos C. Stoumpos University of Crete
Mario Leclerc
Mario Leclerc Université Laval
Thomas N. Jackson
Thomas N. Jackson Pennsylvania State University

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