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Andres Castellanos-Gomez

Andres Castellanos-Gomez

D-Index & Metrics

Materials Science

D-Index
77
Citations
32652
World Ranking
3062
National Ranking
44

Overview

Andres Castellanos-Gomez is affiliated with the Spanish National Research Council in Spain. Their research focuses primarily on materials science and engineering, with significant contributions to materials chemistry and electrical and electronic engineering subfields.

The scientist's main research topics encompass 2D materials and applications, perovskite materials and applications, MXene and MAX phase materials, advanced sensor and energy harvesting materials, graphene research and applications, nanowire synthesis and applications, and quantum dots synthesis and properties.

They have published extensively in several prominent venues, including:

  • Advanced Functional Materials
  • Nano Letters
  • arXiv (Cornell University)
  • npj 2D Materials and Applications
  • 2D Materials

Among their recent publications are:

  • Van der Waals heterostructures, 2022, Nature Reviews Methods Primers
  • Bandgap engineering of two-dimensional semiconductor materials, 2020, npj 2D Materials and Applications
  • Production and processing of graphene and related materials, 2020, 2D Materials
  • Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity, 2022, Light Science & Applications
  • A 2D ferroelectric vortex pattern in twisted BaTiO3 freestanding layers, 2024, Nature

The most frequent coauthors with whom Andres Castellanos-Gomez has collaborated include Riccardo Frisenda, Carmen Munuera, Félix Carrascoso, Thomas Pucher, and Yong Xie.

Their work bridges multiple areas of advanced materials research, with a notable focus on two-dimensional materials and nanoscale devices. The variety of their scientific output demonstrates interdisciplinary engagement spanning fundamental physics, chemistry, and applied engineering fields related to novel material functionalities.

Best Publications

  • Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

    Andres Castellanos-Gomez;Michele Buscema;Rianda Molenaar;Vibhor Singh

  • Isolation and characterization of few-layer black phosphorus

    Andres Castellanos-Gomez;Leonardo Vicarelli;Elsa Prada;Joshua O Island

  • Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

    Michele Buscema;Dirk J. Groenendijk;Sofya I. Blanter;Gary A. Steele

  • Local strain engineering in atomically thin MoS2.

    Andres Castellanos-Gomez;Rafael Roldán;Emmanuele Cappelluti;Michele Buscema

  • Elastic Properties of Freely Suspended MoS2 Nanosheets

    Andres Castellanos-Gomez;Andres Castellanos-Gomez;Menno Poot;Gary A. Steele;Herre S. J. van der Zant

  • Bandgap engineering of two-dimensional semiconductor materials

    A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa

  • Photocurrent generation with two-dimensional van der Waals semiconductors.

    Michele Buscema;Joshua O. Island;Dirk J. Groenendijk;Sofya I. Blanter

  • Environmental instability of few-layer black phosphorus

    Joshua O Island;Gary A Steele;Herre S J van der Zant;Andres Castellanos-Gomez

  • Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating.

    Michele Buscema;Dirk J. Groenendijk;Gary A. Steele;Herre S.J. van der Zant

  • Black Phosphorus: Narrow Gap, Wide Applications

    Andres Castellanos-Gomez

  • Laser-Thinning of MoS2: On Demand Generation of a Single-Layer Semiconductor

    A. Castellanos-Gomez;M. Barkelid;A. M. Goossens;V. E. Calado

  • Large and Tunable Photothermoelectric Effect in Single-Layer MoS2

    Michele Buscema;Maria Barkelid;Val Zwiller;Herre S J van der Zant

  • Molybdenum Oxides – From Fundamentals to Functionality

    Isabela Alves de Castro;Robi Shankar Datta;Jian Zhen Ou;Andres Castellanos‐Gomez

  • Large and tunable photo-thermoelectric effect in single-layer MoS2

    Michele Buscema;Maria Barkelid;Val Zwiller;Herre S. J. van der Zant

  • Laser-thinning of MoS2: on demand generation of a single-layer semiconductor

    Andres Castellanos-Gomez;Maria Barkelid;Stijn M. Goossens;Victor E. Calado

  • The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2

    Michele Buscema;Gary A. Steele;Herre S. J. van der Zant;Andres Castellanos-Gomez

  • Single-photon emission from localized excitons in an atomically thin semiconductor

    Philipp Tonndorf;Robert Schmidt;Robert Schneider;Johannes Kern

  • Strain engineering in semiconducting two-dimensional crystals

    Rafael Roldán;Andrés Castellanos-Gomez;Emmanuele Cappelluti;Francisco Guinea;Francisco Guinea

  • Production and processing of graphene and related materials

    Claudia Backes;Claudia Backes;Amr M Abdelkader;Concepción Alonso;Amandine Andrieux-Ledier

  • Gate Controlled Photocurrent Generation Mechanisms in High-Gain In₂Se₃ Phototransistors.

    J O Island;S I Blanter;M Buscema;H S J van der Zant

  • Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials

    Riccardo Frisenda;Efrén Navarro-Moratalla;Patricia Gant;David Pérez De Lara

Frequent Co-Authors

Nicolás Agraït
Nicolás Agraït Autonomous University of Madrid
Herre S. J. van der Zant
Herre S. J. van der Zant Delft University of Technology
Rudolf Bratschitsch
Rudolf Bratschitsch University of Münster
Mar García-Hernández
Mar García-Hernández Spanish National Research Council
Eugenio Coronado
Eugenio Coronado University of Valencia
Ken Haenen
Ken Haenen Hasselt University
Francisco Guinea
Francisco Guinea IMDEA Nanoscience Institute
Rodolfo Miranda
Rodolfo Miranda Autonomous University of Madrid
Ernst J. R. Sudhölter
Ernst J. R. Sudhölter Delft University of Technology
Thomas Heine
Thomas Heine TU Dresden

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