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Physics
Spain
2025

D-Index & Metrics

Physics

D-Index
123
Citations
104522
World Ranking
708
National Ranking
11

Francisco Guinea publication distribution in Physics in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Physics in 2026. The highlighted bar marks where Francisco Guinea sits on this spectrum.

103–122 publications: 7 scientists 123–142 publications: 10 scientists 143–162 publications: 31 scientists 163–182 publications: 35 scientists 183–202 publications: 53 scientists 203–222 publications: 81 scientists 223–242 publications: 85 scientists 243–262 publications: 112 scientists 263–282 publications: 114 scientists 283–302 publications: 126 scientists 303–322 publications: 136 scientists 323–342 publications: 162 scientists 343–362 publications: 155 scientists 363–382 publications: 156 scientists 383–402 publications: 134 scientists 403–422 publications: 145 scientists 423–442 publications: 147 scientists 443–462 publications: 131 scientists 463–482 publications: 131 scientists 483–502 publications: 116 scientists 503–522 publications: 106 scientists 523–542 publications: 103 scientists 543–562 publications: 87 scientists 563–582 publications: 84 scientists 583–602 publications: 94 scientists 603–622 publications: 70 scientists 623–642 publications: 76 scientists 643–662 publications: 60 scientists 663–682 publications: 54 scientists 683–702 publications: 60 scientists 703–722 publications: 48 scientists 723–742 publications: 64 scientists 743–762 publications: 48 scientists 763–782 publications: 37 scientists 783–802 publications: 43 scientists 803–822 publications: 34 scientists 823–842 publications: 36 scientists 843–862 publications: 32 scientists 863–882 publications: 32 scientists 883–902 publications: 31 scientists 903–922 publications: 25 scientists 923–942 publications: 15 scientists 943–962 publications: 24 scientists 963–982 publications: 13 scientists 983–1,002 publications: 21 scientists 1,003–1,022 publications: 21 scientists 1,023–1,042 publications: 16 scientists 1,043–1,062 publications: 9 scientists 1,063–1,082 publications: 19 scientists 1,083–1,102 publications: 11 scientists 1,103–1,122 publications: 17 scientists 1,123–1,142 publications: 11 scientists 1,143–1,162 publications: 7 scientists 1,163–1,182 publications: 4 scientists 1,183–1,202 publications: 10 scientists 1,203–1,222 publications: 8 scientists 1,223–1,242 publications: 16 scientists 1,243–1,262 publications: 4 scientists 1,263–1,282 publications: 10 scientists 1,283–1,302 publications: 5 scientists 1,303–1,322 publications: 7 scientists 1,323–1,342 publications: 4 scientists 1,343–1,362 publications: 8 scientists 1,363–1,382 publications: 6 scientists 1,383–1,402 publications: 7 scientists 1,403–1,422 publications: 3 scientists 1,423–1,442 publications: 4 scientists 1,443–1,462 publications: 4 scientists 1,463–1,468 publications: 3 scientists 1,469+ publications: 100 scientists
103 publications 1,469+

This scientist: 633 publications — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,469 publications or more.

Francisco Guinea D-index placement in Physics in 2026

The chart shows the D-index (discipline H-index) distribution of Physics scientists ranked by Research.com in 2026. The highlighted bar marks where Francisco Guinea sits on this spectrum.

70–71 D-Index: 76 scientists 72–73 D-Index: 110 scientists 74–75 D-Index: 143 scientists 76–77 D-Index: 153 scientists 78–79 D-Index: 144 scientists 80–81 D-Index: 167 scientists 82–83 D-Index: 167 scientists 84–85 D-Index: 166 scientists 86–87 D-Index: 132 scientists 88–89 D-Index: 155 scientists 90–91 D-Index: 134 scientists 92–93 D-Index: 137 scientists 94–95 D-Index: 102 scientists 96–97 D-Index: 112 scientists 98–99 D-Index: 110 scientists 100–101 D-Index: 116 scientists 102–103 D-Index: 97 scientists 104–105 D-Index: 103 scientists 106–107 D-Index: 87 scientists 108–109 D-Index: 90 scientists 110–111 D-Index: 67 scientists 112–113 D-Index: 78 scientists 114–115 D-Index: 75 scientists 116–117 D-Index: 67 scientists 118–119 D-Index: 69 scientists 120–121 D-Index: 60 scientists 122–123 D-Index: 59 scientists 124–125 D-Index: 53 scientists 126–127 D-Index: 42 scientists 128–129 D-Index: 41 scientists 130–131 D-Index: 33 scientists 132–133 D-Index: 32 scientists 134–135 D-Index: 45 scientists 136–137 D-Index: 19 scientists 138–139 D-Index: 24 scientists 140–141 D-Index: 28 scientists 142–143 D-Index: 31 scientists 144–145 D-Index: 22 scientists 146–147 D-Index: 20 scientists 148–149 D-Index: 12 scientists 150–151 D-Index: 16 scientists 152–153 D-Index: 24 scientists 154–155 D-Index: 23 scientists 156–157 D-Index: 15 scientists 158–159 D-Index: 15 scientists 160–161 D-Index: 11 scientists 162–163 D-Index: 17 scientists 164–165 D-Index: 12 scientists 166–167 D-Index: 11 scientists 168–169 D-Index: 9 scientists 170–171 D-Index: 9 scientists 172–173 D-Index: 11 scientists 174–175 D-Index: 4 scientists 176–177 D-Index: 8 scientists 178–179 D-Index: 5 scientists 180–181 D-Index: 3 scientists 182–183 D-Index: 4 scientists 184 D-Index: 4 scientists 185+ D-Index: 99 scientists
70 D-Index 185+

This scientist: 123 D-Index — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 185 D-Index or more.

Research.com Recognitions

  • 2025 - Research.com Physics in Spain Leader Award
  • 2017 - Fellow of American Physical Society (APS) Citation For pioneering theoretical research on the novel properties of graphene
  • 2017 - Member of the National Academy of Sciences

Overview

Francisco Guinea is affiliated with the IMDEA Nanoscience Institute in Spain. Their research primarily spans the fields of Materials Science and Physics and Astronomy, with a focus on subfields including Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, and Biomedical Engineering.

The scientist's work covers major topics such as Graphene research and applications, Quantum and electron transport phenomena, Topological Materials and Phenomena, 2D Materials and Applications, Surface and Thin Film Phenomena, Physics of Superconductivity and Magnetism, and Molecular Junctions and Nanostructures.

Francisco Guinea has contributed numerous publications across several venues. Frequent publication outlets include arXiv (Cornell University), Physical Review B, Advanced Materials, Physical Review Letters, and Nature Communications.

Recent notable papers include:

  • Colloquium: Spintronics in graphene and other two-dimensional materials (2020), published in Reviews of Modern Physics
  • Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride (2021), published in Nature Communications
  • Band structure and insulating states driven by Coulomb interaction in twisted bilayer graphene (2020), published in Physical Review B
  • Coulomb interaction, phonons, and superconductivity in twisted bilayer graphene (2021), published in Proceedings of the National Academy of Sciences
  • Superconductivity and correlated phases in non-twisted bilayer and trilayer graphene (2023), published in Nature Reviews Physics

Frequent collaborators in research are Pierre A. Pantaleón, Zhen Zhan, Jose Ángel Silva-Guillén, Alejandro Jimeno-Pozo, and Tommaso Cea.

In terms of book publications, Francisco Guinea has contributed to a book titled Valores ético-jurídicos para el siglo XXI, Una propuesta a través del cine. published by Dykinson eBooks in 2023.

The scientist has been recognized by membership in the National Academy of Sciences since 2017 and is a Fellow of the American Physical Society (APS), with the fellowship awarded for pioneering theoretical research on the novel properties of graphene.

Best Publications

  • The electronic properties of graphene

    A. H. Castro Neto;F. Guinea;N. M. R. Peres;K. S. Novoselov

  • Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

    Andrea C. Ferrari;Francesco Bonaccorso;Francesco Bonaccorso;Vladimir Fal'ko;Konstantin S. Novoselov

  • Substrate-induced bandgap opening in epitaxial graphene

    S. Y. Zhou;G.-H. Gweon;G.-H. Gweon;A. V. Fedorov;P. N. First

  • Substrate-induced band gap opening in epitaxial graphene

    S. Y. Zhou;G. H. Gweon;A. V. Fedorov;P. N. First

  • Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

    Eduardo V. Castro;K. S. Novoselov;S. V. Morozov;N. M. R. Peres

  • Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering

    F. Guinea;M. I. Katsnelson;A. K. Geim

  • Strain-Induced Pseudo–Magnetic Fields Greater Than 300 Tesla in Graphene Nanobubbles

    N. Levy;S. A. Burke;K. L. Meaker;M. Panlasigui

  • Electronic properties of disordered two-dimensional carbon

    N. M. R. Peres;N. M. R. Peres;F. Guinea;F. Guinea;A. H. Castro Neto

  • Universal features of the equation of state of metals

    James H. Rose;James H. Rose;John R. Smith;John R. Smith;Francisco Guinea;John Ferrante

  • Cloning of Dirac fermions in graphene superlattices

    L. A. Ponomarenko;R. V. Gorbachev;G. L. Yu;D. C. Elias

  • Electron-Electron Interactions in Graphene: Current Status and Perspectives

    Valeri N. Kotov;Bruno Uchoa;Vitor M. Pereira;F. Guinea

  • Local strain engineering in atomically thin MoS2.

    Andres Castellanos-Gomez;Rafael Roldán;Emmanuele Cappelluti;Michele Buscema

  • Polaritons in layered two-dimensional materials

    Tony Low;Andrey Chaves;Joshua D. Caldwell;Anshuman Kumar;Anshuman Kumar

  • Dynamical polarization of graphene at finite doping

    B Wunsch;B Wunsch;T Stauber;F Sols;F Guinea

  • Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps

    Daniel Huertas-Hernando;F. Guinea;Arne Brataas

  • Damping pathways of mid-infrared plasmons in graphene nanostructures

    Hugen Yan;Tony Low;Wenjuan Zhu;Yanqing Wu

  • Dirac cones reshaped by interaction effects in suspended graphene

    D. C. Elias;R. V. Gorbachev;A. S. Mayorov;S. V. Morozov

  • Gauge fields in graphene

    M.A.H. Vozmediano;M.I. Katsnelson;F. Guinea

  • Missing Atom as a Source of Carbon Magnetism

    M. M. Ugeda;I. Brihuega;F. Guinea;J. M. Gómez-Rodríguez

  • Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

    Eduardo V. Castro;J.M.B. Lopes dos Santos;N.M.R. Peres;K.S. Novoselov

Frequent Co-Authors

A. H. Castro Neto
A. H. Castro Neto National University of Singapore
Nuno M. R. Peres
Nuno M. R. Peres University of Minho
Mikhail I. Katsnelson
Mikhail I. Katsnelson Radboud University
Andre K. Geim
Andre K. Geim University of Manchester
Tony Low
Tony Low University of Minnesota
Fernando Flores
Fernando Flores Autonomous University of Madrid
Vladimir I. Fal'ko
Vladimir I. Fal'ko University of Manchester
Luis Martín-Moreno
Luis Martín-Moreno University of Zaragoza
Irina V. Grigorieva
Irina V. Grigorieva University of Manchester
Fengnian Xia
Fengnian Xia Yale University

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