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Physics
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2026
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Materials Science
Singapore
2025

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 127 380 362 12 12 465 113600
Physics 129 572 550 2 2 554 115795

A. H. Castro Neto publications per year

The chart shows the history of publications by A. H. Castro Neto between 1990 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. A. H. Castro Neto published across 36 years, from 1990 to 2025, averaging 16.6 papers a year. Output peaked at 49 publications in 2007. 14 of the 597 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1990 to 2025. Vertical axis: number of publications, 0 to 49. Peak 49 publications in 2007. 1990: 1 publication 1991: 1 publication 1992: 1 publication 1993: 6 publications 1994: 7 publications 1995: 13 publications 1996: 6 publications 1997: 4 publications 1998: 7 publications 1999: 4 publications 2000: 12 publications 2001: 12 publications 2002: 12 publications 2003: 8 publications 2004: 14 publications 2005: 18 publications 2006: 31 publications 2007: 49 publications 2008: 37 publications 2009: 27 publications 2010: 19 publications 2011: 23 publications 2012: 28 publications 2013: 32 publications 2014: 36 publications 2015: 41 publications 2016: 32 publications 2017: 17 publications 2018: 14 publications 2019: 18 publications 2020: 10 publications 2021: 21 publications 2022: 11 publications 2023: 11 publications 2024: 8 publications 2025: 6 publications
1990 2025

597 publications in total across all disciplines

View publications per year as a table
A. H. Castro Neto: publications per year, 1990 to 2025
Year Publications
1990 1
1991 1
1992 1
1993 6
1994 7
1995 13
1996 6
1997 4
1998 7
1999 4
2000 12
2001 12
2002 12
2003 8
2004 14
2005 18
2006 31
2007 49
2008 37
2009 27
2010 19
2011 23
2012 28
2013 32
2014 36
2015 41
2016 32
2017 17
2018 14
2019 18
2020 10
2021 21
2022 11
2023 11
2024 8
2025 6
Total 597
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A. H. Castro Neto publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where A. H. Castro Neto sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 450–469 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 465 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216 465
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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A. H. Castro Neto D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where A. H. Castro Neto sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 126–127 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 127 D-Index — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24 127
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2026 - Research.com Physics in Singapore Leader Award
  • 2025 - Research.com Materials Science in Singapore Leader Award
  • 2025 - Research.com Physics in Singapore Leader Award
  • 2022 - Research.com Physics in Singapore Leader Award
  • 1997 - Fellow of Alfred P. Sloan Foundation

Overview

A. H. Castro Neto is affiliated with the National University of Singapore. They have an extensive publication record primarily focused on materials science and engineering, with an emphasis on materials chemistry and electronic, optical, and magnetic materials.

Their recent contributions to academic literature include the following papers:

  • Printable two-dimensional superconducting monolayers, 2020, Nature Materials
  • Accelerated Synthesis of Graphene Oxide from Graphene, 2021, Nanomaterials
  • Graphene moiré superlattices with giant quantum nonlinearity of chiral Bloch electrons, 2022, Nature Nanotechnology
  • Graphene oxide classification and standardization, 2023, Scientific Reports
  • Large enhancement of thermoelectric performance in MoS 2 / h -BN heterostructure due to vacancy-induced band hybridization, 2020, Proceedings of the National Academy of Sciences

The scientist collaborates frequently with the following researchers:

  • Alexandra Carvalho
  • Kostya S. Novoselov
  • Mariana C. F. Costa
  • Pei Rou Ng
  • Ricardo K. Donato

A. H. Castro Neto is regularly published in notable venues such as:

  • arXiv (Cornell University)
  • Scientific Reports
  • npj 2D Materials and Applications
  • Nanomaterials
  • Proceedings of the National Academy of Sciences

The primary fields of their work are:

  • Materials Science
  • Engineering

Within these fields, their publication record shows specialization in subfields including:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

The main research topics covered in their work include:

  • Graphene research and applications
  • 2D Materials and Applications
  • Graphene and Nanomaterials Applications
  • Advancements in Battery Materials
  • Electronic and Structural Properties of Oxides
  • Machine Learning in Materials Science
  • Supercapacitor Materials and Fabrication

In addition to journal articles, A. H. Castro Neto has contributed to book publications, notably:

  • The Quantum Nature of Materials, published by World Scientific in 2021

Awards received include Fellowship of the Alfred P. Sloan Foundation in 1997.

Best Publications

  • The electronic properties of graphene

    A. H. Castro Neto;F. Guinea;N. M. R. Peres;K. S. Novoselov

  • 2D materials and van der Waals heterostructures

    K. S. Novoselov;A. Mishchenko;A. Carvalho;A. H. Castro Neto

  • Substrate-induced bandgap opening in epitaxial graphene

    S. Y. Zhou;G.-H. Gweon;G.-H. Gweon;A. V. Fedorov;P. N. First

  • Strong light-matter interactions in heterostructures of atomically thin films.

    Líam Britnell;R. M. Ribeiro;R. M. Ribeiro;A. Eckmann;R. Jalil

  • Substrate-induced band gap opening in epitaxial graphene

    S. Y. Zhou;G. H. Gweon;A. V. Fedorov;P. N. First

  • Making graphene visible

    P. Blake;E. W. Hill;A. H. Castro Neto;K. S. Novoselov

  • Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

    Eduardo V. Castro;K. S. Novoselov;S. V. Morozov;N. M. R. Peres

  • Gate-tuning of graphene plasmons revealed by infrared nano-imaging

    Z. Fei;A. S. Rodin;G. O. Andreev;W. Bao;W. Bao

  • Making graphene visible

    P. Blake;K. S. Novoselov;A. H. Castro Neto;D. Jiang

  • Strain-Induced Pseudo–Magnetic Fields Greater Than 300 Tesla in Graphene Nanobubbles

    N. Levy;S. A. Burke;K. L. Meaker;M. Panlasigui

  • Electronic properties of disordered two-dimensional carbon

    N. M. R. Peres;N. M. R. Peres;F. Guinea;F. Guinea;A. H. Castro Neto

  • Graphene bilayer with a twist: electronic structure.

    J. M. B. Lopes dos Santos;N. M. R. Peres;A. H. Castro Neto

  • Strain-induced gap modification in black phosphorus.

    A. S. Rodin;A. Carvalho;A. H. Castro Neto;A. H. Castro Neto

  • Tight-binding approach to uniaxial strain in graphene

    Vitor M. Pereira;A. H. Castro Neto;N. M. R. Peres

  • Electric field effect in ultrathin black phosphorus

    Steven P. Koenig;Rostislav A. Doganov;Hennrik Schmidt;A. H. Castro Neto

  • Electron-Electron Interactions in Graphene: Current Status and Perspectives

    Valeri N. Kotov;Bruno Uchoa;Vitor M. Pereira;F. Guinea

  • Tunable Phonon Polaritons in Atomically Thin van der Waals Crystals of Boron Nitride

    S. Dai;Z. Fei;Q. Ma;A. S. Rodin

  • Observation of Van Hove singularities in twisted graphene layers

    Guohong Li;A. Luican;J. M. B. Lopes dos Santos;A. H. Castro Neto

  • Strain engineering of graphene's electronic structure.

    Vitor M. Pereira;A. H. Castro Neto

  • Electric field effect in ultrathin black phosphorus

    Steven P. Koenig;Rostislav A. Doganov;Hennrik Schmidt;A. H. Castro Neto

  • Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

    Eduardo V. Castro;J.M.B. Lopes dos Santos;N.M.R. Peres;K.S. Novoselov

Frequent Co-Authors

Nuno M. R. Peres
Nuno M. R. Peres University of Minho
Francisco Guinea
Francisco Guinea IMDEA Nanoscience Institute
Alexandra Carvalho
Alexandra Carvalho National University of Singapore
Barbaros Özyilmaz
Barbaros Özyilmaz National University of Singapore
Goki Eda
Goki Eda National University of Singapore
Kian Ping Loh
Kian Ping Loh National University of Singapore
Michael M. Fogler
Michael M. Fogler University of California, San Diego
Shaffique Adam
Shaffique Adam Yale-NUS College
Jiong Lu
Jiong Lu National University of Singapore
Andre K. Geim
Andre K. Geim University of Manchester

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