The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Michael M. Fogler sits on this spectrum.
This scientist: 246 publications — 45th percentile
45% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Michael M. Fogler sits on this spectrum.
This scientist: 63 D-Index — 53rd percentile
53% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Michael M. Fogler is affiliated with the University of California, San Diego in the United States. Their research spans multiple fields, primarily focusing on Physics and Astronomy, Engineering, and Materials Science. Within these broad areas, their work delves into several subfields including Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry, Civil and Structural Engineering, and Electrical and Electronic Engineering.
The scientist has contributed to research topics such as:
Michael M. Fogler's recent publications demonstrate engagement with advanced materials and nanophotonics. Notable papers include:
Their collaborations include frequent co-authors such as D. N. Basov, Ran Jing, Mengkun Liu, James Hone, and Andrew J. Millis. These partnerships have been significant parts of their extensive body of work.
Michael M. Fogler has published in a variety of scientific venues, with repeated contributions to:
In recognition of their scientific contributions, Michael M. Fogler was awarded the status of Fellow of the American Physical Society in 2018. This fellowship cited their work on the electronic and optical properties of two-dimensional systems, with focus on chargedensity waves in the quantum Hall effect regime and nearfield optical phenomena in van der Waals materials. Previously, they were named a Fellow of the Alfred P. Sloan Foundation in 2003.
Z. Fei;A. S. Rodin;G. O. Andreev;W. Bao;W. Bao
S. Dai;Z. Fei;Q. Ma;A. S. Rodin
D. N. Basov;D. N. Basov;M. M. Fogler;F. J. García de Abajo;F. J. García de Abajo
Joshua D. Caldwell;Andrey V. Kretinin;Yiguo Chen;Vincenzo Giannini
S. Dai;Q. Ma;M. K. Liu;M. K. Liu;T. Andersen
Zhe Fei;Gregory O. Andreev;Wenzhong Bao;Lingfeng M. Zhang;Lingfeng M. Zhang
Zhe Fei;Gregory O. Andreev;Wenzhong Bao;Lingfeng M. Zhang
A. A. Koulakov;M. M. Fogler;B. I. Shklovskii
M. M. Fogler;L. V. Butov;K. S. Novoselov
G. X. Ni;G. X. Ni;A. S. McLeod;A. S. McLeod;Z. Sun;L. Wang
S. Dai;Q. Ma;T. Andersen;A. S. Mcleod
M. M. Fogler;A. A. Koulakov;B. I. Shklovskii
Alexander J. Giles;Siyuan Dai;Igor Vurgaftman;Timothy Hoffman
G. X. Ni;G. X. Ni;L. Wang;M. D. Goldflam;M. Wagner
L. M. Zhang;Z. Q. Li;D. N. Basov;M. M. Fogler
S. S. Sunku;G. X. Ni;B. Y. Jiang;H. Yoo
Mark J. H. Ku;Tony X. Zhou;Qing Li;Young J. Shin;Young J. Shin
Z.Q. Li;E.A. Henriksen;Z. Jiang;Zhao Hao
Z. Fei;A. S. Rodin;W. Gannett;W. Gannett;S. Dai
D. N. Basov;M. M. Fogler;A. Lanzara;Feng Wang
GuangXin Ni;McLeod Alexander;Zhiyuan Sun;Lei Wang
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