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Nuno M. R. Peres

Nuno M. R. Peres

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Materials Science
Portugal
2022

D-Index & Metrics

Materials Science

D-Index
74
Citations
69921
World Ranking
3540
National Ranking
15

Physics

D-Index
75
Citations
71009
World Ranking
3352
National Ranking
7

Research.com Recognitions

  • 2022 - Research.com Materials Science in Portugal Leader Award

Overview

Nuno M. R. Peres is affiliated with the University of Minho in Portugal. Their research work spans across multiple disciplines, with a strong focus on physics, materials science, and engineering. The scientist's contributions are particularly prominent in the study of two-dimensional materials, plasmonic phenomena, and quantum transport processes.

Their primary fields of study include:

  • Physics and Astronomy
  • Materials Science
  • Engineering

Within these broad areas, Peres investigates several subfields such as:

  • Atomic and Molecular Physics, and Optics
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials

The main topics explored in their work reflect cutting-edge research in materials and photonics, including:

  • 2D Materials and Applications
  • Plasmonic and Surface Plasmon Research
  • Graphene Research and Applications
  • Perovskite Materials and Applications
  • Quantum and Electron Transport Phenomena
  • Strong Light-Matter Interactions
  • Photonic Crystals and Applications

Nuno M. R. Peres has a strong publication record in various scientific venues. The most frequent publication platforms include:

  • arXiv (Cornell University)
  • Physical Review B
  • Physical Review A
  • Journal of Physics Condensed Matter
  • The European Physical Journal B

Among their recent papers are:

  • "Quantum Nanophotonics in Two-Dimensional Materials" (2021, ACS Photonics)
  • "Near-Unity Light Absorption in a Monolayer WS2 Van der Waals Heterostructure Cavity" (2020, Nano Letters)
  • "Topological Magnons in CrI3 Monolayers: An Itinerant Fermion Description" (2020, 2D Materials)
  • "Topological Photonic Tamm States and the Su-Schrieffer-Heeger Model" (2020, Physical Review A)
  • "Strongly Coupled Magnon-Plasmon Polaritons in Graphene-Two-Dimensional Ferromagnet Heterostructures" (2023, Nano Letters)

Collaboration is an important aspect of their research. Frequent co-authors include:

  • J. C. G. Henriques
  • N. Asger Mortensen
  • A. J. Chaves
  • T. V. C. Antão
  • Itai Epstein

Best Publications

  • The electronic properties of graphene

    A. H. Castro Neto;F. Guinea;N. M. R. Peres;K. S. Novoselov

  • Fine Structure Constant Defines Visual Transparency of Graphene

    R. R. Nair;P. Blake;P. Blake;A. N. Grigorenko;K. S. Novoselov

  • Field-effect tunneling transistor based on vertical graphene heterostructures.

    L. Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

  • Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

    Eduardo V. Castro;K. S. Novoselov;S. V. Morozov;N. M. R. Peres

  • Electronic properties of disordered two-dimensional carbon

    N. M. R. Peres;N. M. R. Peres;F. Guinea;F. Guinea;A. H. Castro Neto

  • Graphene bilayer with a twist: electronic structure.

    J. M. B. Lopes dos Santos;N. M. R. Peres;A. H. Castro Neto

  • Tight-binding approach to uniaxial strain in graphene

    Vitor M. Pereira;A. H. Castro Neto;N. M. R. Peres

  • Colloquium: The transport properties of graphene: An introduction

    N. M. R. Peres

  • Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

    Liam Britnell;Roman V. Gorbachev;Rashid Jalil;Branson D. Belle

  • Optical conductivity of graphene in the visible region of the spectrum

    T. Stauber;N. M. R. Peres;A. K. Geim

  • Atomically thin boron nitride : a tunnelling barrier for graphene devices

    Liam Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

  • Electronic states and Landau levels in graphene stacks

    F. Guinea;A. H. Castro Neto;N. M. R. Peres

  • Disorder induced localized States in graphene.

    Vitor M. Pereira;F. Guinea;F. Guinea;J. M. B. Lopes dos Santos;N. M. R. Peres;N. M. R. Peres

  • Continuum model of the twisted graphene bilayer

    J. M. B. Lopes dos Santos;N. M. R. Peres;A. H. Castro Neto

  • Electronic transport in graphene: A semiclassical approach including midgap states

    T. Stauber;N. M. R. Peres;F. Guinea

  • Conductance quantization in mesoscopic graphene

    N. M. R. Peres;A. H. Castro Neto;F. Guinea

  • A PRIMER ON SURFACE PLASMON-POLARITONS IN GRAPHENE

    Yuliy V. Bludov;Aires Ferreira;N. M. R. Peres;Mikhail Vasilevskiy

  • Drawing conclusions from graphene

    Antonio Castro Neto;Francisco Guinea;Nuno Miguel Peres

  • Electronic properties of bilayer and multilayer graphene

    Johan Nilsson;A. H. Castro Neto;F. Guinea;N. M. R. Peres

  • An Introduction to Graphene Plasmonics

    Paulo André Dias Gonçalves;N. M. R. Peres

  • Electronic properties of graphene multilayers.

    Johan Nilsson;A. H. Castro Neto;F. Guinea;N. M. R. Peres

  • Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

    Eduardo V. Castro;J.M.B. Lopes dos Santos;N.M.R. Peres;K.S. Novoselov

Frequent Co-Authors

A. H. Castro Neto
A. H. Castro Neto National University of Singapore
Francisco Guinea
Francisco Guinea IMDEA Nanoscience Institute
Frank H. L. Koppens
Frank H. L. Koppens Institute of Photonic Sciences
N. Asger Mortensen
N. Asger Mortensen University of Southern Denmark
Andre K. Geim
Andre K. Geim University of Manchester
David R. Smith
David R. Smith Duke University
Harald Giessen
Harald Giessen University of Stuttgart
Thomas Garm Pedersen
Thomas Garm Pedersen Aalborg University
Kostya S. Novoselov
Kostya S. Novoselov National University of Singapore

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