World's Best Scientists 2026 revealed!
Maxim Ryzhii

Maxim Ryzhii

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5273
World Ranking
5163
National Ranking
216

Maxim Ryzhii publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Maxim Ryzhii sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 267 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Maxim Ryzhii D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Maxim Ryzhii sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Maxim Ryzhii is affiliated with the University of Aizu in Japan and has a research portfolio primarily centered in the fields of Engineering and Physics and Astronomy. They have contributed extensively to the subfields of Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, and Cardiology and Cardiovascular Medicine.

The main topics of Maxim Ryzhii's work include:

  • Plasmonic and Surface Plasmon Research
  • Graphene research and applications
  • Topological Materials and Phenomena
  • Superconducting and THz Device Technology
  • Photonic and Optical Devices
  • Quantum and electron transport phenomena
  • Cardiac electrophysiology and arrhythmias

Recent publications demonstrate a focus on graphene-based technologies and terahertz devices. Notable papers include:

  • "Graphene-based plasmonic metamaterial for terahertz laser transistors," 2022, Nanophotonics
  • "Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride," 2021, Optical Materials Express
  • "Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection," 2021, Applied Physics Letters
  • "Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-AsₓP₁₋ₓ gate layer," 2023, Scientific Reports
  • "Far-infrared and terahertz emitting diodes based on graphene/black-P and graphene/MoS₂ heterostructures," 2020, Optics Express

They frequently collaborate with researchers including Taiichi Otsuji, V. Ryzhii, Vladimir Mitin, M. S. Shur, and Chao Tang.

Maxim Ryzhii has published in venues such as arXiv (Cornell University), Journal of Applied Physics, physica status solidi (a), Computing in cardiology, and Applied Physics Letters.

There is at least one book publication under Maxim Ryzhii's name, titled Fundamental and Applied Problems in Terahertz-related Devices and Technologies, published by World Scientific in 2023.

Best Publications

  • Negative dynamic conductivity of graphene with optical pumping

    V. Ryzhii;M. Ryzhii;T. Otsuji

  • Graphene-based devices in terahertz science and technology

    T Otsuji;S A Boubanga Tombet;A Satou;H Fukidome

  • Toward the creation of terahertz graphene injection laser

    V. Ryzhii;M. Ryzhii;V. Mitin;T. Otsuji

  • Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

    V. Ryzhii;M. Ryzhii;A. S. Satou;T. Otsuji

  • Emission and Detection of Terahertz Radiation Using Two-Dimensional Electrons in III–V Semiconductors and Graphene

    T. Otsuji;T. Watanabe;S. A. Boubanga Tombet;A. Satou

  • Injection and Population Inversion in Electrically Induced p-n Junction in Graphene with Split Gates

    Maxim Ryzhii;Victor Ryzhii

  • Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures

    V. Ryzhii;M. Ryzhii;V. Mitin;T. Otsuji

  • Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectors

    V Ryzhii;I Khmyrova;M Ryzhii;V Mitin

  • Graphene bilayer field-effect phototransistor for terahertz and infrared detection

    V. Ryzhii;M. Ryzhii

  • Terahertz Laser with Optically Pumped Graphene Layers and Fabri?Perot Resonator

    Alexander A. Dubinov;Alexander A. Dubinov;Vladimir Ya. Aleshkin;Maxim Ryzhii;Taiichi Otsuji

  • Double graphene-layer plasma resonances terahertz detector

    V Ryzhii;T Otsuji;M Ryzhii;M S Shur

  • Device Model for Graphene Nanoribbon Phototransistor

    Victor Ryzhii;Vladimir Mitin;Vladimir Mitin;Maxim Ryzhii;Nadezhda Ryabova

  • Terahertz-Wave Generation Using Graphene: Toward New Types of Terahertz Lasers

    T. Otsuji;S. B. Tombet;A. Satou;M. Ryzhii

  • Effect of Heating and Cooling of Photogenerated Electron–Hole Plasma in Optically Pumped Graphene on Population Inversion

    Victor Ryzhii;Maxim Ryzhii;Vladimir Mitin;Akira Satou

  • Terahertz photomixing using plasma resonances in double-graphene layer structures

    V. Ryzhii;M. Ryzhii;V. Mitin;M. S. Shur

  • Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions

    A. Satou;V. Ryzhii;I. Khmyrova;M. Ryzhii

  • Terahertz and infrared photodetectors based on multiple graphene layer and nanoribbon structures

    V. Ryzhii;V. Ryzhii;N. Ryabova;N. Ryabova;M. Ryzhii;N. V. Baryshnikov

  • Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator

    V. Ryzhii;T. Otsuji;M. Ryzhii;V. G. Leiman

  • Current-voltage characteristics of a graphene-nanoribbon field-effect transistor

    V. Ryzhii;M. Ryzhii;A. Satou;T. Otsuji

  • Graphene terahertz uncooled bolometers

    V Ryzhii;V Ryzhii;T Otsuji;M Ryzhii;N Ryabova

  • Dynamic effects in double graphene-layer structures with inter-layer resonant-tunnelling negative conductivity

    V Ryzhii;A Satou;T Otsuji;M Ryzhii

Frequent Co-Authors

Victor Ryzhii
Victor Ryzhii Tohoku University
Taiichi Otsuji
Taiichi Otsuji Tohoku University
Vladimir Mitin
Vladimir Mitin University at Buffalo, State University of New York
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Magnus Willander
Magnus Willander Linköping University
Wojciech Knap
Wojciech Knap Warsaw University of Technology
H. C. Liu
H. C. Liu Shanghai Jiao Tong University
Takayuki Watanabe
Takayuki Watanabe Kyushu University
Maksim Skorobogatiy
Maksim Skorobogatiy Polytechnique Montréal

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