The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Taiichi Otsuji sits on this spectrum.
This scientist: 675 publications — 93rd percentile
93% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Taiichi Otsuji sits on this spectrum.
This scientist: 61 D-Index — 78th percentile
78% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Taiichi Otsuji is affiliated with Tohoku University in Japan and has contributed extensively to the fields of engineering and physics and astronomy. Their research focuses primarily on electrical and electronic engineering, atomic and molecular physics and optics, biomedical engineering, materials chemistry, and astronomy and astrophysics.
Their scientific output spans main research topics including plasmonic and surface plasmon research, terahertz technology and applications, topological materials and phenomena, photonic and optical devices, graphene research and applications, quantum and electron transport phenomena, and superconducting and THz device technology.
Otsuji has published numerous papers in frequent venues such as arXiv (Cornell University), Journal of Applied Physics, Applied Physics Letters, physica status solidi (a), and Nanophotonics.
The list of frequent co-authors includes M. Ryzhii, V. Ryzhii, Vladimir Mitin, M. S. Shur, and Chao Tang.
Otsuji is also an author of a book published by World Scientific titled Fundamental and Applied Problems in Terahertz-related Devices and Technologies (2023).
Their research contributions have been recognized through awards such as the OSA Fellowship in 2019 for pioneering contributions to terahertz emission and detection utilizing two-dimensional plasmonic and electronic systems with semiconductor nano- and hetero-structures. They were also named an IEEE Fellow in 2014 for work on plasmonic semiconductor integrated device technology for terahertz sensing.
V. Ryzhii;M. Ryzhii;T. Otsuji
Wojciech Knap;Mikhail Dyakonov;Dominique Coquillat;Frederic Teppe
V. Ryzhii;A. Satou;T. Otsuji
A A Dubinov;A A Dubinov;V Ya Aleshkin;V Mitin;T Otsuji
T Otsuji;S A Boubanga Tombet;A Satou;H Fukidome
W. Knap;M. Dyakonov;D. Coquillat;F. Teppe
S. Boubanga-Tombet;S. Chan;T. Watanabe;A. Satou
Taiichi Otsuji;Mitsuhiro Hanabe;Osamu Ogawara
D. Svintsov;V. Vyurkov;S. Yurchenko;T. Otsuji
A. El Fatimy;N. Dyakonova;Y. Meziani;T. Otsuji
V. V. Popov;D. V. Fateev;T. Otsuji;Y. M. Meziani
V. Ryzhii;M. Ryzhii;V. Mitin;T. Otsuji
V. Ryzhii;A. A. Dubinov;T. Otsuji;V. Mitin
V. Ryzhii;M. Ryzhii;A. S. Satou;T. Otsuji
K. Maezawa;H. Matsuzaki;M. Yamamoto;T. Otsuji
V. V. Popov;V. V. Popov;O. V. Polischuk;O. V. Polischuk;A. R. Davoyan;V. Ryzhii
Taiichi Otsuji;Michael Shur
T. Otsuji;T. Watanabe;S. A. Boubanga Tombet;A. Satou
Y. Kurita;G. Ducournau;D. Coquillat;A. Satou
Taiichi Otsuji;Vyacheslav Popov;Victor Ryzhii
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