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Taiichi Otsuji

Taiichi Otsuji

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
12995
World Ranking
1556
National Ranking
50

Research.com Recognitions

  • 2019 - OSA Fellows Taiichi Otsuji Tohoku University, Japan For pioneering contributions to terahertz emission and detection exploiting two-dimensional plasmonic and electronic systems with semiconductor nano- and hetero-structures
  • 2014 - IEEE Fellow For contributions to plasmonic semiconductor integrated device technology for terahertz sensing

Overview

Taiichi Otsuji is affiliated with Tohoku University in Japan and has contributed extensively to the fields of engineering and physics and astronomy. Their research focuses primarily on electrical and electronic engineering, atomic and molecular physics and optics, biomedical engineering, materials chemistry, and astronomy and astrophysics.

Their scientific output spans main research topics including plasmonic and surface plasmon research, terahertz technology and applications, topological materials and phenomena, photonic and optical devices, graphene research and applications, quantum and electron transport phenomena, and superconducting and THz device technology.

Otsuji has published numerous papers in frequent venues such as arXiv (Cornell University), Journal of Applied Physics, Applied Physics Letters, physica status solidi (a), and Nanophotonics.

  • Room-Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures (2020, Physical Review X)
  • Graphene based plasma-wave devices for terahertz applications (2020, Applied Physics Letters)
  • Asymmetric dual-grating gates graphene FET for detection of terahertz radiations (2020, APL Photonics)
  • Enhanced terahertz detection of multigate graphene nanostructures (2022, Nanophotonics)
  • Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications (2021, Sensors)

The list of frequent co-authors includes M. Ryzhii, V. Ryzhii, Vladimir Mitin, M. S. Shur, and Chao Tang.

Otsuji is also an author of a book published by World Scientific titled Fundamental and Applied Problems in Terahertz-related Devices and Technologies (2023).

Their research contributions have been recognized through awards such as the OSA Fellowship in 2019 for pioneering contributions to terahertz emission and detection utilizing two-dimensional plasmonic and electronic systems with semiconductor nano- and hetero-structures. They were also named an IEEE Fellow in 2014 for work on plasmonic semiconductor integrated device technology for terahertz sensing.

Best Publications

  • Negative dynamic conductivity of graphene with optical pumping

    V. Ryzhii;M. Ryzhii;T. Otsuji

  • Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

    Wojciech Knap;Mikhail Dyakonov;Dominique Coquillat;Frederic Teppe

  • Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures

    V. Ryzhii;A. Satou;T. Otsuji

  • Terahertz surface plasmons in optically pumped graphene structures

    A A Dubinov;A A Dubinov;V Ya Aleshkin;V Mitin;T Otsuji

  • Graphene-based devices in terahertz science and technology

    T Otsuji;S A Boubanga Tombet;A Satou;H Fukidome

  • Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

    W. Knap;M. Dyakonov;D. Coquillat;F. Teppe

  • Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature

    S. Boubanga-Tombet;S. Chan;T. Watanabe;A. Satou

  • Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

    Taiichi Otsuji;Mitsuhiro Hanabe;Osamu Ogawara

  • Hydrodynamic model for electron-hole plasma in graphene

    D. Svintsov;V. Vyurkov;S. Yurchenko;T. Otsuji

  • AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

    A. El Fatimy;N. Dyakonova;Y. Meziani;T. Otsuji

  • Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

    V. V. Popov;D. V. Fateev;T. Otsuji;Y. M. Meziani

  • Toward the creation of terahertz graphene injection laser

    V. Ryzhii;M. Ryzhii;V. Mitin;T. Otsuji

  • Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides

    V. Ryzhii;A. A. Dubinov;T. Otsuji;V. Mitin

  • Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

    V. Ryzhii;M. Ryzhii;A. S. Satou;T. Otsuji

  • High-speed and low-power operation of a resonant tunneling logic gate MOBILE

    K. Maezawa;H. Matsuzaki;M. Yamamoto;T. Otsuji

  • Plasmonic terahertz lasing in an array of graphene nanocavities

    V. V. Popov;V. V. Popov;O. V. Polischuk;O. V. Polischuk;A. R. Davoyan;V. Ryzhii

  • Terahertz Plasmonics: Good Results and Great Expectations

    Taiichi Otsuji;Michael Shur

  • Emission and Detection of Terahertz Radiation Using Two-Dimensional Electrons in III–V Semiconductors and Graphene

    T. Otsuji;T. Watanabe;S. A. Boubanga Tombet;A. Satou

  • Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

    Y. Kurita;G. Ducournau;D. Coquillat;A. Satou

  • Active graphene plasmonics for terahertz device applications

    Taiichi Otsuji;Vyacheslav Popov;Victor Ryzhii

Frequent Co-Authors

Victor Ryzhii
Victor Ryzhii Tohoku University
Maxim Ryzhii
Maxim Ryzhii University of Aizu
Vladimir Mitin
Vladimir Mitin University at Buffalo, State University of New York
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Takatomo Enoki
Takatomo Enoki NTT (Japan)
Tadao Nagatsuma
Tadao Nagatsuma Osaka University
Tadao Ishibashi
Tadao Ishibashi NTT (Japan)
Takayuki Watanabe
Takayuki Watanabe Kyushu University

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