2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award
2019 - OSA Fellows Taiichi Otsuji Tohoku University, Japan For pioneering contributions to terahertz emission and detection exploiting two-dimensional plasmonic and electronic systems with semiconductor nano- and hetero-structures
2014 - IEEE Fellow For contributions to plasmonic semiconductor integrated device technology for terahertz sensing
Taiichi Otsuji mainly focuses on Optoelectronics, Terahertz radiation, Graphene, Plasmon and Plasma. His research integrates issues of Transistor and Laser, Optics in his study of Optoelectronics. The study incorporates disciplines such as Plasma oscillation, Optical pumping and Responsivity, Detector in addition to Terahertz radiation.
His Graphene study combines topics in areas such as Population inversion, Condensed matter physics, Conductivity and Lasing threshold. His work deals with themes such as Grating, Terahertz time-domain spectroscopy, Graphene nanoribbons and Photomixing, which intersect with Plasmon. His studies in Plasma integrate themes in fields like Electron hole, Absorption and Electric field.
Optoelectronics, Terahertz radiation, Graphene, Plasmon and Optics are his primary areas of study. The various areas that Taiichi Otsuji examines in his Optoelectronics study include Field-effect transistor, Transistor and High-electron-mobility transistor. The concepts of his Transistor study are interwoven with issues in Nanotechnology, Plasma and Logic gate.
His study looks at the intersection of Terahertz radiation and topics like Population inversion with Conductivity and Stimulated emission. His Graphene study which covers Condensed matter physics that intersects with Scattering. His study in Plasmon is interdisciplinary in nature, drawing from both Common emitter, Semiconductor and Photomixing.
The scientist’s investigation covers issues in Optoelectronics, Terahertz radiation, Graphene, Plasmon and Transistor. Taiichi Otsuji works mostly in the field of Optoelectronics, limiting it down to topics relating to High-electron-mobility transistor and, in certain cases, Photonics, as a part of the same area of interest. His Terahertz radiation study is related to the wider topic of Optics.
His Graphene research also works with subjects such as
Taiichi Otsuji spends much of his time researching Optoelectronics, Terahertz radiation, Graphene, Heterojunction and Responsivity. His work carried out in the field of Optoelectronics brings together such families of science as Field-effect transistor, Transistor and Infrared. His Terahertz radiation study introduces a deeper knowledge of Optics.
His Graphene research is multidisciplinary, relying on both Condensed matter physics, Quantum tunnelling, Doping and Electron. His Heterojunction research focuses on subjects like Diode, which are linked to Spontaneous emission and Visible spectrum. His Responsivity study integrates concerns from other disciplines, such as Photonics, Photoelectric effect, Quantization, Bolometer and Density of states.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Negative dynamic conductivity of graphene with optical pumping
V. Ryzhii;M. Ryzhii;T. Otsuji.
Journal of Applied Physics (2007)
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Wojciech Knap;Mikhail Dyakonov;Dominique Coquillat;Frederic Teppe.
Journal of Infrared, Millimeter, and Terahertz Waves (2009)
Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures
V. Ryzhii;A. Satou;T. Otsuji.
Journal of Applied Physics (2007)
Terahertz surface plasmons in optically pumped graphene structures
A A Dubinov;A A Dubinov;V Ya Aleshkin;V Mitin;T Otsuji.
Journal of Physics: Condensed Matter (2011)
Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors
Taiichi Otsuji;Mitsuhiro Hanabe;Osamu Ogawara.
Applied Physics Letters (2004)
Graphene-based devices in terahertz science and technology
T Otsuji;S A Boubanga Tombet;A Satou;H Fukidome.
Journal of Physics D (2012)
Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature
S. Boubanga-Tombet;S. Chan;T. Watanabe;A. Satou.
Physical Review B (2012)
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
W. Knap;M. Dyakonov;D. Coquillat;F. Teppe.
arXiv: Mesoscale and Nanoscale Physics (2009)
Toward the creation of terahertz graphene injection laser
V. Ryzhii;M. Ryzhii;V. Mitin;T. Otsuji.
Journal of Applied Physics (2011)
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
A. El Fatimy;N. Dyakonova;Y. Meziani;T. Otsuji.
Journal of Applied Physics (2010)
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