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Tadao Ishibashi

Tadao Ishibashi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
9041
World Ranking
3515
National Ranking
126

Research.com Recognitions

  • 2005 - IEEE Fellow For contributions to high-speed and optoelectronic semiconductor devices.

Overview

Tadao Ishibashi is affiliated with NTT in Japan and has made scholarly contributions primarily in the fields of Engineering and Physics and Astronomy. Their research focuses on Electrical and Electronic Engineering as well as Atomic and Molecular Physics and Optics.

The main topics of Ishibashi's research include:

  • Photonic and Optical Devices
  • Terahertz technology and applications
  • Radio Frequency Integrated Circuit Design
  • Microwave Engineering and Waveguides
  • Advanced Photonic Communication Systems
  • Semiconductor Quantum Structures and Devices
  • Superconducting and THz Device Technology

Recent papers authored or co-authored by Tadao Ishibashi include:

  • Uni-traveling-carrier photodiodes, 2020, Journal of Applied Physics
  • Uni-Traveling Carrier Photodiodes: Development and Prospects, 2021, IEEE Journal of Selected Topics in Quantum Electronics

Frequent co-authors with whom Ishibashi has collaborated include:

  • Hiroshi Itô
  • Tadao Nagatsuma
  • Ming Che
  • Kazutoshi Kato
  • Yuma Kawamoto

Common venues where Ishibashi has published research papers are:

  • IEICE Electronics Express
  • Applied Physics Express
  • Electronics Letters
  • Journal of Applied Physics
  • IEEE Journal of Selected Topics in Quantum Electronics

Tadao Ishibashi was recognized as an IEEE Fellow in 2005 for contributions to high-speed and optoelectronic semiconductor devices.

Best Publications

  • Uni-traveling-carrier photodiodes

    T. Ishibashi;N. Shimizu;S. Kodama;H. Ito

  • High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes

    H. Ito;S. Kodama;Y. Muramoto;T. Furuta

  • InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth

    H. Ito;T. Furuta;S. Kodama;T. Ishibashi

  • Unitraveling-Carrier Photodiodes for Terahertz Applications

    Tadao Ishibashi;Yoshifumi Muramoto;Toshihide Yoshimatsu;Hiroshi Ito

  • InP/InGaAs Uni-Traveling-Carrier Photodiodes

    Tadao Ishibashi;Tomofumi Furuta;Hiroshi Fushimi;Satoshi Kodama

  • InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz

    N. Shimizu;N. Watanabe;T. Furuta;T. Ishibashi

  • Continuous THz-wave generation using antenna-integrated uni-travelling-carrier photodiodes

    Hiroshi Ito;Fumito Nakajima;Tomofumi Furuta;Tadao Ishibashi

  • High-power RF photodiodes and their applications

    Taduo Nagatsuma;Hiroshi Ito;Tadao Ishibashi

  • Photonic generation of continuous THz wave using uni-traveling-carrier photodiode

    H. Ito;T. Furuta;F. Nakajima;K. Yoshino

  • A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure

    Unknown

  • Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors

    K. Kurishima;H. Nakajima;T. Kobayashi;Y. Matsuoka

  • Uni-traveling-carrier photodiodes

    Tadao Ishibashi;Hiroshi Ito

  • InP/InGaAs pin photodiode structure maximising bandwidth and efficiency

    Y. Muramoto;T. Ishibashi

  • High-power photonic millimetre wave generation at 100 GHz using matching-circuit-integrated uni-travelling-carrier photodiodes

    H. Ito;T. Nagatsuma;A. Hirata;T. Minotani

  • Photonic terahertz-wave generation using antenna-integrated uni-travelling-carrier photodiode

    H. Ito;F. Nakajima;T. Furuta;K. Yoshino

  • Photonic millimetre-and sub-millimetre-wave generation using J-band rectangular-waveguide-output uni-travelling-carrier photodiode module

    H. Ito;T. Furuta;Y. Muramoto;T. Ito

  • Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar Transistors

    Osaake Nakajima;Koichi Nagata;Hiroshi Ito;Tadao Ishibashi

  • InP/InGaAs Fermi-level managed barrier diode for broadband and low-noise terahertz-wave detection

    Hiroshi Ito;Tadao Ishibashi

  • Rectangular waveguide output unitraveling-carrier photodiode module for high-power photonic millimeter-wave generation in the F-band

    H. Ito;T. Ito;Y. Muramoto;T. Furuta

  • 40 Gbit/s n-i-n InP Mach-Zehnder modulator with a voltage of 2.2 V

    K. Tsuzuki;T. Ishibashi;T. Ito;S. Oku

  • Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer

    Unknown

  • C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands

    M. Ino;T. Ishibashi;M. Ohmori

  • Triple-mesa Avalanche Photodiode With Inverted P-Down Structure for Reliability and Stability

    Masahiro Nada;Yoshifumi Muramoto;Haruki Yokoyama;Tadao Ishibashi

Frequent Co-Authors

Tadao Nagatsuma
Tadao Nagatsuma Osaka University
Taiichi Otsuji
Taiichi Otsuji Tohoku University
Akihiko Hirata
Akihiko Hirata Chiba Institute of Technology
Toshiki Makimoto
Toshiki Makimoto Waseda University
Hiroshi Okamoto
Hiroshi Okamoto University of Tokyo
Sadao Adachi
Sadao Adachi Gunma University
Victor Ryzhii
Victor Ryzhii Tohoku University
Takatomo Enoki
Takatomo Enoki NTT (Japan)

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