World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
5024
World Ranking
5791
National Ranking
1967

Overview

Andreas Beling is affiliated with the University of Virginia in the United States. Their research spans primarily the fields of Engineering and Physics and Astronomy, with an emphasis on Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. The scientist's work covers specialized topics including Photonic and Optical Devices, Advanced Photonic Communication Systems, Advanced Fiber Laser Technologies, Semiconductor Quantum Structures and Devices, Optical Network Technologies, Semiconductor Lasers and Optical Devices, and Radio Frequency Integrated Circuit Design.

Their recent research output includes impactful papers published in high-profile journals and conferences. Notable publications include:

  • Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz, 2021, Nature Photonics
  • Integrated optical frequency division for microwave and mmWave generation, 2024, Nature
  • Towards high-power, high-coherence, integrated photonic mmWave platform with microcavity solitons, 2021, Light Science & Applications
  • High-performance modified uni-traveling carrier photodiode integrated on a thin-film lithium niobate platform, 2022, Photonics Research
  • Heterogeneous photodiodes on silicon nitride waveguides, 2020, Optics Express

The scientist collaborates frequently with several colleagues, with whom they have multiple coauthored publications. Frequent coauthors include:

  • Keye Sun
  • Jesse Morgan
  • Steven M. Bowers
  • Beichen Wang
  • Junyi Gao

Regular publication venues for Andreas Beling's work include:

  • Conference on Lasers and Electro-Optics
  • Journal of Lightwave Technology
  • arXiv (Cornell University)
  • Nature Photonics
  • Optics Express

The scientist's research fields emphasize the development and application of photonic devices and integrated optical systems, illustrating a focus on advancing technologies in photonics and optoelectronics. Their expertise in electrical engineering and optics is reflected in their contributions to areas such as semiconductor lasers and quantum structures, as well as radio frequency integrated circuit design, supporting a wide range of photonic communication and laser technologies.

Best Publications

  • Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product

    Yimin Kang;Han-Din Liu;Han-Din Liu;Mike Morse;Mario J. Paniccia

  • Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz

    S. Lischke;A. Peczek;J. S. Morgan;K. Sun

  • High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

    Zhi Li;Huapu Pan;Hao Chen;Andreas Beling

  • High-power, high-linearity photodiodes

    Andreas Beling;Xiaojun Xie;Joe C. Campbell

  • InP-Based High-Speed Photodetectors

    A. Beling;J.C. Campbell

  • Integrated optical frequency division for microwave and mmWave generation

    Unknown

  • High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

    Zhi Li;Yang Fu;Molly Piels;Huapu Pan

  • High-Power Flip-Chip Bonded Photodiode With 110 GHz Bandwidth

    Qinglong Li;Kejia Li;Yang Fu;Xiaojun Xie

  • InP-based waveguide-integrated photodetector with 100-GHz bandwidth

    H.-G. Bach;A. Beling;G.G. Mekonnen;R. Kunkel

  • Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond

    Xiaojun Xie;Qiugui Zhou;Kejia Li;Yang Shen

  • Miniaturized waveguide-integrated p-i-n photodetector with 120-GHz bandwidth and high responsivity

    A. Beling;H.-G. Bach;G.G. Mekonnen;R. Kunkel

  • High-performance modified uni-traveling carrier photodiode integrated on thin-film lithium niobate platform

    Unknown

  • High-Power V-Band InGaAs/InP Photodiodes

    Qiugui Zhou;A. S. Cross;A. Beling;Yang Fu

  • Towards high-power, high-coherence, integrated photonic mmWave platform with microcavity solitons

    Beichen Wang;Jesse S. Morgan;Keye Sun;Mandana Jahanbozorgi

  • Attosecond timing in optical-to-electrical conversion

    Frederick N. Baynes;Franklyn J. Quinlan;Tara M. Fortier;Qiugui Zhou

  • InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation.

    Andreas Beling;Allen S. Cross;Molly Piels;Jon Peters

  • Heterogeneously integrated waveguide-coupled photodiodes on SOI with 12 dBm output power at 40 GHz

    Xiaojun Xie;Qiugui Zhou;Erik Norberg;Matt Jacob-Mitos

  • Fully-integrated polarization-diversity coherent receiver module for 100G DP-QPSK

    A. Beling;N. Ebel;A. Matiss;G. Unterborsch

  • High-Speed Miniaturized Photodiode and Parallel-Fed Traveling-Wave Photodetectors Based on InP

    A. Beling;H.-G. Bach;G.G. Mekonnen;R. Kunkel

  • High-Speed Photodetectors for Microwave Photonics

    Keye Sun;Andreas Beling

  • Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology

    Dieter Knoll;Stefan Lischke;Lars Zimmermann;Bernd Heinemann

  • Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 μm light detection

    Y. Kang;M. Zadka;S. Litski;G. Sarid

  • High-Power Evanescently Coupled Waveguide MUTC Photodiode With >105-GHz Bandwidth

    Qinglong Li;Keye Sun;Kejia Li;Qianhuan Yu

Frequent Co-Authors

Joe C. Campbell
Joe C. Campbell University of Virginia
John E. Bowers
John E. Bowers University of California, Santa Barbara
Scott B. Papp
Scott B. Papp National Institute of Standards and Technology
Lars Zimmermann
Lars Zimmermann Technical University of Berlin
R. Ludwig
R. Ludwig Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute
Mario J. Paniccia
Mario J. Paniccia Anello Photonics
Colja Schubert
Colja Schubert Fraunhofer Society
Keith J. Williams
Keith J. Williams United States Naval Research Laboratory
Bernhard Schmauss
Bernhard Schmauss University of Erlangen-Nuremberg

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