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Jesus A. del Alamo

Jesus A. del Alamo

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
15383
World Ranking
1940
National Ranking
765

Jesus A. del Alamo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jesus A. del Alamo sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 365 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jesus A. del Alamo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jesus A. del Alamo sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2019 - Semiconductor Industry Association University Researcher Award
  • 2014 - Fellow of American Physical Society (APS) Citation For fundamental contributions to the development of IIIV compound semiconductor electronics

Overview

Jesus A. del Alamo is a researcher affiliated with MIT in the United States specializing in engineering, with a particular focus on electrical and electronic engineering. Their body of work spans multiple subfields including materials chemistry, polymers and plastics, atomic and molecular physics and optics, as well as cellular and molecular neuroscience.

The scientist's research centers on advanced memory and neural computing, semiconductor materials and devices, and advancements in semiconductor devices and circuit design. Additional topics of interest include ferroelectric and negative capacitance devices, neuroscience and neural engineering, conducting polymers and their applications, and nanowire synthesis and applications.

Their recent publications include the following:

  • "Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems" (2023) published in ACS Nano
  • "Protonic solid-state electrochemical synapse for physical neural networks" (2020) published in Nature Communications
  • "Nanosecond protonic programmable resistors for analog deep learning" (2022) published in Science
  • "Electrochemical Ionic Synapses: Progress and Perspectives" (2022) published in Advanced Materials
  • "Robust Chemiresistive Behavior in Conductive Polymer/MOF Composites" (2024) published in Advanced Materials

Frequent co-authors of Jesus A. del Alamo include:

  • Murat Onen
  • Ju Li
  • Bilge Yildiz
  • Nicolas Émond
  • Yanjie Shao

The researcher commonly publishes in venues such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Advanced Materials, arXiv (Cornell University), and Nano Letters.

Jesus A. del Alamo has received the Semiconductor Industry Association University Researcher Award in 2019. In 2014, they were recognized as a Fellow of the American Physical Society with a citation highlighting fundamental contributions to the development of III-V compound semiconductor electronics.

Best Publications

  • Nanometre-scale electronics with III–V compound semiconductors

    Jesús A. del Alamo

  • Carrier-induced change in refractive index of InP, GaAs and InGaAsP

    B.R. Bennett;R.A. Soref;J.A. Del Alamo

  • GaN HEMT reliability

    J.A. del Alamo;J. Joh

  • A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

    Jungwoo Joh;J A del Alamo

  • III–V compound semiconductor transistors—from planar to nanowire structures

    Heike Riel;Lars-Erik Wernersson;Minghwei Hong;Jesús A. del Alamo

  • Quantum field-effect directional coupler

    Jesus A. del Alamo;Cristopher C. Eugster

  • A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs

    S.R. Bahl;J.A. del Alamo

  • Band‐gap narrowing in heavily doped silicon: A comparison of optical and electrical data

    Joachim Wagner;Jesús A. del Alamo

  • 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

    Dae-Hyun Kim;J.A. del Alamo

  • Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

    Jungwoo Joh;J.A. del Alamo;U. Chowdhury;Tso-Min Chou

  • 30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

    Dae-Hyun Kim;Jesús A del Alamo

  • Modelling of minority-carrier transport in heavily doped silicon emitters

    Jesús A. del Alamo;Richard M. Swanson

  • TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

    Unknown

  • Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

    Prashanth Makaram;Jungwoo Joh;Jesús A. del Alamo;Tomás Palacios

  • Protonic solid-state electrochemical synapse for physical neural networks.

    Xiahui Yao;Konstantin Klyukin;Wenjie Lu;Murat Onen

  • Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors

    Donghyun Jin;Jesus A. del Alamo

  • Forward-bias tunneling: A limitation to bipolar device scaling

    J.A. del Alamo;R.M. Swanson

  • A physical model for the kink effect in InAlAs/InGaAs HEMTs

    M.H. Somerville;A. Ernst;J.A. del Alamo

  • Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon

    Unknown

  • A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

    Jungwoo Joh;Feng Gao;Tomás Palacios;Jesús A. del Alamo

  • Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs

    Donghyun Jin;Jesus A. del Alamo

  • Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs

    M.H. Somerville;J.A. del Alamo;W. Hoke

Frequent Co-Authors

Brian R. Bennett
Brian R. Bennett United States Naval Research Laboratory
Takashi Mizutani
Takashi Mizutani Nagoya University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Taiichi Otsuji
Taiichi Otsuji Tohoku University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
M. L. Alles
M. L. Alles Vanderbilt University
Richard M. Swanson
Richard M. Swanson Stanford University

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