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Jesus A. del Alamo

Jesus A. del Alamo

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
15383
World Ranking
1940
National Ranking
764

Research.com Recognitions

  • 2019 - Semiconductor Industry Association University Researcher Award
  • 2014 - Fellow of American Physical Society (APS) Citation For fundamental contributions to the development of IIIV compound semiconductor electronics

Overview

Jesus A. del Alamo is a researcher affiliated with MIT in the United States specializing in engineering, with a particular focus on electrical and electronic engineering. Their body of work spans multiple subfields including materials chemistry, polymers and plastics, atomic and molecular physics and optics, as well as cellular and molecular neuroscience.

The scientist's research centers on advanced memory and neural computing, semiconductor materials and devices, and advancements in semiconductor devices and circuit design. Additional topics of interest include ferroelectric and negative capacitance devices, neuroscience and neural engineering, conducting polymers and their applications, and nanowire synthesis and applications.

Their recent publications include the following:

  • "Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems" (2023) published in ACS Nano
  • "Protonic solid-state electrochemical synapse for physical neural networks" (2020) published in Nature Communications
  • "Nanosecond protonic programmable resistors for analog deep learning" (2022) published in Science
  • "Electrochemical Ionic Synapses: Progress and Perspectives" (2022) published in Advanced Materials
  • "Robust Chemiresistive Behavior in Conductive Polymer/MOF Composites" (2024) published in Advanced Materials

Frequent co-authors of Jesus A. del Alamo include:

  • Murat Onen
  • Ju Li
  • Bilge Yildiz
  • Nicolas Émond
  • Yanjie Shao

The researcher commonly publishes in venues such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Advanced Materials, arXiv (Cornell University), and Nano Letters.

Jesus A. del Alamo has received the Semiconductor Industry Association University Researcher Award in 2019. In 2014, they were recognized as a Fellow of the American Physical Society with a citation highlighting fundamental contributions to the development of III-V compound semiconductor electronics.

Best Publications

  • Nanometre-scale electronics with III–V compound semiconductors

    Jesús A. del Alamo

  • Carrier-induced change in refractive index of InP, GaAs and InGaAsP

    B.R. Bennett;R.A. Soref;J.A. Del Alamo

  • GaN HEMT reliability

    J.A. del Alamo;J. Joh

  • A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

    Jungwoo Joh;J A del Alamo

  • III–V compound semiconductor transistors—from planar to nanowire structures

    Heike Riel;Lars-Erik Wernersson;Minghwei Hong;Jesús A. del Alamo

  • Quantum field-effect directional coupler

    Jesus A. del Alamo;Cristopher C. Eugster

  • A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs

    S.R. Bahl;J.A. del Alamo

  • Band‐gap narrowing in heavily doped silicon: A comparison of optical and electrical data

    Joachim Wagner;Jesús A. del Alamo

  • 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

    Dae-Hyun Kim;J.A. del Alamo

  • Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

    Jungwoo Joh;J.A. del Alamo;U. Chowdhury;Tso-Min Chou

  • 30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

    Dae-Hyun Kim;Jesús A del Alamo

  • Modelling of minority-carrier transport in heavily doped silicon emitters

    Jesús A. del Alamo;Richard M. Swanson

  • TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

    Unknown

  • Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

    Prashanth Makaram;Jungwoo Joh;Jesús A. del Alamo;Tomás Palacios

  • Protonic solid-state electrochemical synapse for physical neural networks.

    Xiahui Yao;Konstantin Klyukin;Wenjie Lu;Murat Onen

  • Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors

    Donghyun Jin;Jesus A. del Alamo

  • Forward-bias tunneling: A limitation to bipolar device scaling

    J.A. del Alamo;R.M. Swanson

  • A physical model for the kink effect in InAlAs/InGaAs HEMTs

    M.H. Somerville;A. Ernst;J.A. del Alamo

  • Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon

    Unknown

  • A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

    Jungwoo Joh;Feng Gao;Tomás Palacios;Jesús A. del Alamo

  • Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs

    Donghyun Jin;Jesus A. del Alamo

  • Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs

    M.H. Somerville;J.A. del Alamo;W. Hoke

Frequent Co-Authors

Brian R. Bennett
Brian R. Bennett United States Naval Research Laboratory
Takashi Mizutani
Takashi Mizutani Nagoya University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Taiichi Otsuji
Taiichi Otsuji Tohoku University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Richard M. Swanson
Richard M. Swanson Stanford University
Seiji Samukawa
Seiji Samukawa Tohoku University

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