Erik Lind

Erik Lind publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Erik Lind sits on this spectrum.

Erik Lind D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Erik Lind sits on this spectrum.

Overview

Best Publications

• Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.

  Erik Lind;Ann I. Persson;Lars Samuelson;Lars-Erik Wernersson

  179
  Citations

• High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

  A. W. Dey;B. M. Borg;B. Ganjipour;M. Ek

  153
  Citations

• Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

  M. Egard;S. Johansson;A.-C. Johansson;K.-M. Persson

  128
  Citations

• Development of a Vertical Wrap-Gated InAs FET

  C. Thelander;C. Rehnstedt;L.E. Froberg;E. Lind

  121
  Citations

• Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I on = 10 μA/μm for I off = 1 nA/μm at V ds = 0.3 V

  E. Memisevic;J. Svensson;M. Hellenbrand;E. Lind

  117
  Citations

• III-V Nanowires—Extending a Narrowing Road

  L-E Wernersson;C Thelander;E Lind;L Samuelson

  116
  Citations

• Assembly of nanoscaled field effect transistors

  Lars-Erik Wernersson;Erik Lind;Tomas Bryllert;Jonas Ohlsson

  108
  Citations

• Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

  Elvedin Memisevic;Markus Hellenbrand;Erik Lind;Axel R. Persson

  106
  Citations

• High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

  Sofia Johansson;Elvedin Memisevic;Lars-Erik Wernersson;Erik Lind

  98
  Citations

• High transconductance self-aligned gate-last surface channel In 0.53 Ga 0.47 As MOSFET

  M. Egard;L. Ohlsson;B. M. Borg;F. Lenrick

  94
  Citations

• High-Performance InAs Nanowire MOSFETs

  A. W. Dey;C. Thelander;E. Lind;K. A. Dick

  87
  Citations

• Temperature dependent properties of InSb and InAs nanowire field-effect transistors

  Henrik A. Nilsson;Philippe Caroff;Claes Thelander;Erik Lind

  87
  Citations

• Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors

  Anil W. Dey;Johannes Svensson;Martin Ek;Erik Lind

  82
  Citations

• Low resistance, nonalloyed Ohmic contacts to InGaAs

  Adam M. Crook;Erik Lind;Zach Griffith;Mark J. W. Rodwell

  81
  Citations

• A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

  S. Johansson;M. Berg;Karl-Magnus Persson;E. Lind

  78
  Citations

• Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

  Karl-Magnus Persson;Martin Berg;Mattias B. Borg;Jun Wu

  73
  Citations

• III-V Heterostructure Nanowire Tunnel FETs

  Erik Lind;Elvedin Memisevic;Anil W. Dey;Lars-Erik Wernersson

  68
  Citations

• Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

  E. Lind;M.P. Persson;Y.-M. Niquet;L.-E. Wernersson

  67
  Citations

• High-Frequency Performance of Self-Aligned Gate-Last Surface Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFET

  M. Egard;L. Ohlsson;M. Arlelid;K.-M Persson

  65
  Citations

• InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

  Elvedin Memisevic;Johannes Svensson;Erik Lind;Lars-Erik Wernersson

  64
  Citations

• DEVICE RESEARCH CONFERENCE

  Suman Datta;Michael Flatté;Judy Hoyt;Erik Lind

  59
  Citations

• Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

  Elvedin Memisevic;Johannes Svensson;Markus Hellenbrand;Erik Lind

  57
  Citations