World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
3943
World Ranking
5895
National Ranking
95

Overview

Erik Lind is affiliated with Lund University in Sweden and has contributed extensively to the fields of Engineering and Physics and Astronomy. Their work spans 68 publications in Engineering and 32 in Physics and Astronomy, with focused expertise in several subfields.

The scientist's primary research areas include Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, Condensed Matter Physics, and Materials Chemistry. These subfields reflect a broad engagement with both fundamental and applied aspects of semiconductor technology and quantum materials.

Erik Lind's research interests cover diverse topics such as:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Nanowire Synthesis and Applications
  • Semiconductor Quantum Structures and Devices
  • Electronic and Structural Properties of Oxides
  • Quantum and electron transport phenomena
  • Ferroelectric and Negative Capacitance Devices

Among the recent papers associated with the scientist are:

  • Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies, 2020, ACS Applied Electronic Materials
  • High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm, 2020, IEEE Electron Device Letters
  • Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs, 2020, ACS Applied Electronic Materials
  • Vertical nanowire III-V MOSFETs with improved high-frequency gain, 2020, Electronics Letters
  • Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs With a Field Plate, 2021, IEEE Electron Device Letters

Frequent co-authors in their research include:

  • Patrik Olausson
  • Lars-Erik Wernersson
  • Johannes Svensson
  • Lasse Södergren
  • Rainer Timm

The main publication venues for Erik Lind's work encompass:

  • IEEE Transactions on Electron Devices
  • Zenodo (CERN European Organization for Nuclear Research)
  • Applied Physics Letters
  • physica status solidi (a)
  • ACS Applied Electronic Materials

Best Publications

  • Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.

    Erik Lind;Ann I. Persson;Lars Samuelson;Lars-Erik Wernersson

  • High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

    A. W. Dey;B. M. Borg;B. Ganjipour;M. Ek

  • Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

    M. Egard;S. Johansson;A.-C. Johansson;K.-M. Persson

  • Development of a Vertical Wrap-Gated InAs FET

    C. Thelander;C. Rehnstedt;L.E. Froberg;E. Lind

  • Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I on = 10 μA/μm for I off = 1 nA/μm at V ds = 0.3 V

    E. Memisevic;J. Svensson;M. Hellenbrand;E. Lind

  • III-V Nanowires—Extending a Narrowing Road

    L-E Wernersson;C Thelander;E Lind;L Samuelson

  • Assembly of nanoscaled field effect transistors

    Lars-Erik Wernersson;Erik Lind;Tomas Bryllert;Jonas Ohlsson

  • Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

    Elvedin Memisevic;Markus Hellenbrand;Erik Lind;Axel R. Persson

  • High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

    Sofia Johansson;Elvedin Memisevic;Lars-Erik Wernersson;Erik Lind

  • High transconductance self-aligned gate-last surface channel In 0.53 Ga 0.47 As MOSFET

    M. Egard;L. Ohlsson;B. M. Borg;F. Lenrick

  • High-Performance InAs Nanowire MOSFETs

    A. W. Dey;C. Thelander;E. Lind;K. A. Dick

  • Temperature dependent properties of InSb and InAs nanowire field-effect transistors

    Henrik A. Nilsson;Philippe Caroff;Claes Thelander;Erik Lind

  • Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors

    Anil W. Dey;Johannes Svensson;Martin Ek;Erik Lind

  • Low resistance, nonalloyed Ohmic contacts to InGaAs

    Adam M. Crook;Erik Lind;Zach Griffith;Mark J. W. Rodwell

  • A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

    S. Johansson;M. Berg;Karl-Magnus Persson;E. Lind

  • Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

    Karl-Magnus Persson;Martin Berg;Mattias B. Borg;Jun Wu

  • III-V Heterostructure Nanowire Tunnel FETs

    Erik Lind;Elvedin Memisevic;Anil W. Dey;Lars-Erik Wernersson

  • Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

    E. Lind;M.P. Persson;Y.-M. Niquet;L.-E. Wernersson

  • High-Frequency Performance of Self-Aligned Gate-Last Surface Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFET

    M. Egard;L. Ohlsson;M. Arlelid;K.-M Persson

  • InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

    Elvedin Memisevic;Johannes Svensson;Erik Lind;Lars-Erik Wernersson

  • DEVICE RESEARCH CONFERENCE

    Suman Datta;Michael Flatté;Judy Hoyt;Erik Lind

  • Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

    Elvedin Memisevic;Johannes Svensson;Markus Hellenbrand;Erik Lind

Frequent Co-Authors

Lars-Erik Wernersson
Lars-Erik Wernersson Lund University
Claes Thelander
Claes Thelander Lund University
Lars Samuelson
Lars Samuelson Lund University
Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara
Werner Seifert
Werner Seifert Lund University
Anders Mikkelsen
Anders Mikkelsen Lund University
Philippe Caroff
Philippe Caroff Microsoft (United States)
Magnus T. Borgström
Magnus T. Borgström Lund University
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Kimberly A. Dick
Kimberly A. Dick Lund University

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