World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
62
Citations
18592
World Ranking
6365
National Ranking
1918

Hongqi Xu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Hongqi Xu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 337 publications — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Hongqi Xu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Hongqi Xu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 62 D-Index — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2019 - Fellow of American Physical Society (APS) Citation For outstanding contributions to nanophysics and quantum transport in semiconductor systems

Overview

Hongqi Xu is affiliated with Peking University in China and has a research focus primarily within the field of Physics and Astronomy, with 96 publications. Their work spans multiple specialized subfields including Atomic and Molecular Physics, and Optics; Materials Chemistry; Electrical and Electronic Engineering; Condensed Matter Physics; and Artificial Intelligence.

The scientist's research contributions cover a range of topics, predominantly centered on Quantum and electron transport phenomena, Topological Materials and Phenomena, and Semiconductor Quantum Structures and Devices. Additional topics include Physics of Superconductivity and Magnetism, Graphene research and applications, Advancements in Semiconductor Devices and Circuit Design, and Quantum Information and Cryptography.

Xu has authored a number of recent papers, highlighting active engagement with nanostructures and superconductivity research. These include:

  • Observation and Ultrafast Dynamics of Inter-Sub-Band Transition in InAs Twinning Superlattice Nanowires, 2020, Advanced Materials
  • A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire, 2021, Nanoscale
  • Quasiparticle Trapping at Vortices Producing Josephson Supercurrent Enhancement, 2022, Physical Review Letters
  • Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions, 2023, Nano Letters
  • Microwave-Assisted Unidirectional Superconductivity in Al-InAs Nanowire-Al Junctions under Magnetic Fields, 2024, Physical Review Letters

Their research outputs are frequently published in venues such as arXiv (Cornell University), Nanoscale, Physical Review B, Nano Letters, and Physical Review Letters, demonstrating a consistent presence in leading journals relevant to condensed matter physics and nanotechnology.

Collaboration plays a significant role in Xu's work, with frequent coauthors including Dong Pan, Ji-Yin Wang, Haitian Su, Zhi-Hai Liu, and Jianhua Zhao. These partnerships indicate active research networks within semiconductor physics and quantum systems.

In recognition of their scientific contributions, Hongqi Xu was named a Fellow of the American Physical Society in 2019. The citation noted outstanding contributions to nanophysics and quantum transport in semiconductor systems.

Best Publications

  • Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device.

    Mingtang Deng;C L Yu;Guangyao Huang;Marcus Larsson

  • Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossover

    H. O. H. Churchill;V. Fatemi;K. Grove-Rasmussen;M. T. Deng

  • Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device

    M. T. Deng;C. L. Yu;G. Y. Huang;M. Larsson

  • InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

    Jesper Wallentin;Nicklas Anttu;Damir Asoli;Maria Huffman

  • Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity.

    Chuancheng Jia;Agostino Migliore;Na Xin;Shaoyun Huang

  • High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

    Jinxiong Wu;Hongtao Yuan;Mengmeng Meng;Cheng Chen

  • Giant, level-dependent g factors in InSb nanowire quantum dots.

    Henrik A Nilsson;Philippe Caroff;Claes Thelander;Marcus Larsson

  • Valley-dependent Brewster angles and Goos-Hanchen effect in strained graphene

    Zhenhua Wu;F. Zhai;F. M. Peeters;Hongqi Xu

  • Unified treatment of fluorescence and raman scattering processes near metal surfaces.

    Hongxing Xu;Xue-Hua Wang;Martin P. Persson;H. Q. Xu

  • Symmetry of spin transport in two-terminal waveguides with a spin-orbital interaction and magnetic field modulations

    Feng Zhai;Hongqi Xu

  • Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates

    Bing Deng;Zhenqian Pang;Shulin Chen;Shulin Chen;Xin Li;Xin Li

  • Thermoelectric efficiency at maximum power in low-dimensional systems

    Natthapon Nakpathomkun;Hongqi Xu;Heiner Linke

  • Electrical properties of three-terminal ballistic junctions

    H. Q. Xu

  • Towards super-clean graphene

    Li Lin;Jincan Zhang;Haisheng Su;Jiayu Li

  • Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors

    Wenshan Zheng;Tian Xie;Yu Zhou;Y L Chen

  • Efficient light management in vertical nanowire arrays for photovoltaics

    Nicklas Anttu;Hongqi Xu

  • Magnetic barrier on strained graphene: A possible valley filter

    Feng Zhai;Xiaofang Zhao;Kai Chang;H. Q. Xu

  • Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions

    I. Shorubalko;H. Q. Xu;I. Maximov;P. Omling

  • Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires

    Liang Ma;Wei Hu;Qinglin Zhang;Pinyun Ren

  • Surface Monocrystallization of Copper Foil for Fast Growth of Large Single-Crystal Graphene under Free Molecular Flow

    Huan Wang;Xiaozhi Xu;Jiayu Li;Li Lin

  • Fabrication of quantum devices by Ångström-level manipulation of nanoparticles with an atomic force microscope

    T. Junno;S.-B. Carlsson;Hongqi Xu;L. Montelius

Frequent Co-Authors

Lars Samuelson
Lars Samuelson Lund University
Zhongfan Liu
Zhongfan Liu Peking University
Hailin Peng
Hailin Peng Peking University
Philippe Caroff
Philippe Caroff Microsoft (United States)
Seigo Tarucha
Seigo Tarucha University of Tokyo
Lars Montelius
Lars Montelius Lund University
Li Lin
Li Lin Peking University
Hongxing Xu
Hongxing Xu Wuhan University
Magnus T. Borgström
Magnus T. Borgström Lund University
Lars-Erik Wernersson
Lars-Erik Wernersson Lund University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Hongqi Xu

Trending Scientists