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Materials Science

D-Index
62
Citations
18592
World Ranking
6367
National Ranking
1917

Research.com Recognitions

  • 2019 - Fellow of American Physical Society (APS) Citation For outstanding contributions to nanophysics and quantum transport in semiconductor systems

Overview

Hongqi Xu is affiliated with Peking University in China and has a research focus primarily within the field of Physics and Astronomy, with 96 publications. Their work spans multiple specialized subfields including Atomic and Molecular Physics, and Optics; Materials Chemistry; Electrical and Electronic Engineering; Condensed Matter Physics; and Artificial Intelligence.

The scientist's research contributions cover a range of topics, predominantly centered on Quantum and electron transport phenomena, Topological Materials and Phenomena, and Semiconductor Quantum Structures and Devices. Additional topics include Physics of Superconductivity and Magnetism, Graphene research and applications, Advancements in Semiconductor Devices and Circuit Design, and Quantum Information and Cryptography.

Xu has authored a number of recent papers, highlighting active engagement with nanostructures and superconductivity research. These include:

  • Observation and Ultrafast Dynamics of Inter-Sub-Band Transition in InAs Twinning Superlattice Nanowires, 2020, Advanced Materials
  • A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire, 2021, Nanoscale
  • Quasiparticle Trapping at Vortices Producing Josephson Supercurrent Enhancement, 2022, Physical Review Letters
  • Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions, 2023, Nano Letters
  • Microwave-Assisted Unidirectional Superconductivity in Al-InAs Nanowire-Al Junctions under Magnetic Fields, 2024, Physical Review Letters

Their research outputs are frequently published in venues such as arXiv (Cornell University), Nanoscale, Physical Review B, Nano Letters, and Physical Review Letters, demonstrating a consistent presence in leading journals relevant to condensed matter physics and nanotechnology.

Collaboration plays a significant role in Xu's work, with frequent coauthors including Dong Pan, Ji-Yin Wang, Haitian Su, Zhi-Hai Liu, and Jianhua Zhao. These partnerships indicate active research networks within semiconductor physics and quantum systems.

In recognition of their scientific contributions, Hongqi Xu was named a Fellow of the American Physical Society in 2019. The citation noted outstanding contributions to nanophysics and quantum transport in semiconductor systems.

Best Publications

  • Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device.

    Mingtang Deng;C L Yu;Guangyao Huang;Marcus Larsson

  • Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossover

    H. O. H. Churchill;V. Fatemi;K. Grove-Rasmussen;M. T. Deng

  • Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device

    M. T. Deng;C. L. Yu;G. Y. Huang;M. Larsson

  • InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

    Jesper Wallentin;Nicklas Anttu;Damir Asoli;Maria Huffman

  • Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity.

    Chuancheng Jia;Agostino Migliore;Na Xin;Shaoyun Huang

  • High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

    Jinxiong Wu;Hongtao Yuan;Mengmeng Meng;Cheng Chen

  • Giant, level-dependent g factors in InSb nanowire quantum dots.

    Henrik A Nilsson;Philippe Caroff;Claes Thelander;Marcus Larsson

  • Valley-dependent Brewster angles and Goos-Hanchen effect in strained graphene

    Zhenhua Wu;F. Zhai;F. M. Peeters;Hongqi Xu

  • Unified treatment of fluorescence and raman scattering processes near metal surfaces.

    Hongxing Xu;Xue-Hua Wang;Martin P. Persson;H. Q. Xu

  • Symmetry of spin transport in two-terminal waveguides with a spin-orbital interaction and magnetic field modulations

    Feng Zhai;Hongqi Xu

  • Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates

    Bing Deng;Zhenqian Pang;Shulin Chen;Shulin Chen;Xin Li;Xin Li

  • Thermoelectric efficiency at maximum power in low-dimensional systems

    Natthapon Nakpathomkun;Hongqi Xu;Heiner Linke

  • Electrical properties of three-terminal ballistic junctions

    H. Q. Xu

  • Towards super-clean graphene

    Li Lin;Jincan Zhang;Haisheng Su;Jiayu Li

  • Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors

    Wenshan Zheng;Tian Xie;Yu Zhou;Y L Chen

  • Efficient light management in vertical nanowire arrays for photovoltaics

    Nicklas Anttu;Hongqi Xu

  • Magnetic barrier on strained graphene: A possible valley filter

    Feng Zhai;Xiaofang Zhao;Kai Chang;H. Q. Xu

  • Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions

    I. Shorubalko;H. Q. Xu;I. Maximov;P. Omling

  • Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires

    Liang Ma;Wei Hu;Qinglin Zhang;Pinyun Ren

  • Surface Monocrystallization of Copper Foil for Fast Growth of Large Single-Crystal Graphene under Free Molecular Flow

    Huan Wang;Xiaozhi Xu;Jiayu Li;Li Lin

  • Fabrication of quantum devices by Ångström-level manipulation of nanoparticles with an atomic force microscope

    T. Junno;S.-B. Carlsson;Hongqi Xu;L. Montelius

Frequent Co-Authors

Lars Samuelson
Lars Samuelson Lund University
Zhongfan Liu
Zhongfan Liu Peking University
Hailin Peng
Hailin Peng Peking University
Philippe Caroff
Philippe Caroff Microsoft (United States)
Seigo Tarucha
Seigo Tarucha University of Tokyo
Lars Montelius
Lars Montelius Lund University
Li Lin
Li Lin Peking University
Hongxing Xu
Hongxing Xu Wuhan University
Magnus T. Borgström
Magnus T. Borgström Lund University
Lars-Erik Wernersson
Lars-Erik Wernersson Lund University

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