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Dimitri A. Antoniadis

Dimitri A. Antoniadis

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
86
Citations
22961
World Ranking
369
National Ranking
175

Materials Science

D-Index
86
Citations
22920
World Ranking
2101
National Ranking
627

Research.com Recognitions

  • 2019 - Fellow of the American Academy of Arts and Sciences
  • 2015 - IEEE Jun-ichi Nishizawa Medal “For contributions to metal oxide semiconductor field-effect transistor physics, technology, and modeling.”
  • 2006 - Member of the National Academy of Engineering For contributions on microelectronics in field-effect devices and for silicon process modeling.
  • 2004 - Semiconductor Industry Association University Researcher Award
  • 1990 - IEEE Fellow For contributions to the fabrication process modeling and simulation and to field-effect quantum transport devices.

Overview

Dimitri A. Antoniadis is affiliated with MIT in the United States and has produced significant work within the fields of Engineering and Materials Science. Their research prominently focuses on Electrical and Electronic Engineering and Materials Chemistry, with additional contributions in Biomedical Engineering.

Their main research topics include:

  • Ferroelectric and Negative Capacitance Devices
  • Ferroelectric and Piezoelectric Materials
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Innovative Microfluidic and Catalytic Techniques Innovation

Frequent co-authors in their publications include Jesús A. del Alamo, Taekyong Kim, Michael Hoffmann, Zheng Wang, and Nujhat Tasneem.

The venues where Dimitri Antoniadis has published most often are:

  • IEEE Transactions on Electron Devices
  • Nature Communications
  • Proceedings of the IEEE
  • Nano Letters
  • Authors group

Recent papers authored or co-authored by Dimitri Antoniadis include:

  • "Antiferroelectric negative capacitance from a structural phase transition in zirconia," 2022, Nature Communications
  • "A Density Metric for Semiconductor Technology [Point of View]," 2020, Proceedings of the IEEE
  • "Nucleation-Limited Switching Dynamics Model for Efficient Ferroelectrics Circuit Simulation," 2021, IEEE Transactions on Electron Devices
  • "Switching Dynamics in Metal-Ferroelectric HfZrO2-Metal Structures," 2022, IEEE Transactions on Electron Devices
  • "On the Imprint Mechanism of Thin-Film Hf₀.₅Zr₀.₅O₂ Ferroelectrics," 2024, IEEE Transactions on Electron Devices

Throughout their career, Dimitri Antoniadis has received several professional recognitions, including the IEEE Jun-ichi Nishizawa Medal in 2015 for contributions to metal oxide semiconductor field-effect transistor physics, technology, and modeling. They were elected a Fellow of the American Academy of Arts and Sciences in 2019 and a Member of the National Academy of Engineering in 2006 for work on microelectronics in field-effect devices and for silicon process modeling. Earlier distinctions include the Semiconductor Industry Association University Researcher Award in 2004 and IEEE Fellowship in 1990 for achievements in fabrication process modeling and quantum transport devices.

Best Publications

  • Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

    J.W. Tschanz;J.T. Kao;S.G. Narendra;R. Nair

  • MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

    Amirhasan Nourbakhsh;Ahmad Zubair;Redwan N. Sajjad;K G Amir Tavakkoli

  • Scaling of stack effect and its application for leakage reduction

    S. Narendra;S. Borkar;V. De;D. Antoniadis

  • Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

    Minjoo L. Lee;C. W. Leitz;Z. Cheng;A. J. Pitera

  • Measurement and modeling of self-heating in SOI nMOSFET's

    L.T. Su;J.E. Chung;D.A. Antoniadis;K.E. Goodson

  • Strained silicon MOSFET technology

    J.L. Hoyt;H.M. Nayfeh;S. Eguchi;I. Aberg

  • Conductance oscillations periodic in the density of a one-dimensional electron gas.

    J. H. F. Scott-Thomas;Stuart B. Field;M. A. Kastner;Henry I. Smith

  • Process for producing semiconductor product using graded epitaxial growth

    Dimitri A Antoniadis;Eugene A Fitzgerald;Judy L Hoyt;ディミトリ エイ アントニアディス

  • Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

    M. T. Currie;C. W. Leitz;T. A. Langdo;G. Taraschi

  • Transistor sizing issues and tool for multi-threshold CMOS technology

    James Kao;Anantha Chandrakasan;Dimitri Antoniadis

  • High quality Ge on Si by epitaxial necking

    T. A. Langdo;C. W. Leitz;M. T. Currie;E. A. Fitzgerald

  • Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

    O.M. Nayfeh;C.N. Chleirigh;J. Hennessy;L. Gomez

  • A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

    A. Khakifirooz;O.M. Nayfeh;D. Antoniadis

  • Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics

    D. A. Antoniadis;I. Moskowitz

  • Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x<y) virtual substrates

    C. W. Leitz;M. T. Currie;Minjoo Lawrence Lee;Z. Y. Cheng

  • Relationship between measured and intrinsic transconductances of FET's

    S.Y. Chou;D.A. Antoniadis

  • Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors

    C. W. Leitz;M. T. Currie;Minjoo Lawrence Lee;Z. Y. Cheng

  • Models for computer simulation of complete IC fabrication process

    D.A. Antoniadis;R.W. Dutton

  • Back-gated CMOS on SOIAS for dynamic threshold voltage control

    I.Y. Yang;C. Vieri;A. Chandrakasan;D.A. Antoniadis

  • On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

    A. Lochtefeld;D.A. Antoniadis

  • Die-to-Die and Within-Die Parameter Variations on Microprocessor Frequency and Leakage

    James Tschanz;James Kao;Siva Narendra;Raj Nair

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