The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dimitri A. Antoniadis sits on this spectrum.
This scientist: 490 publications — 83rd percentile
83% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dimitri A. Antoniadis sits on this spectrum.
This scientist: 86 D-Index — 95th percentile
95% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Dimitri A. Antoniadis is affiliated with MIT in the United States and has produced significant work within the fields of Engineering and Materials Science. Their research prominently focuses on Electrical and Electronic Engineering and Materials Chemistry, with additional contributions in Biomedical Engineering.
Their main research topics include:
Frequent co-authors in their publications include Jesús A. del Alamo, Taekyong Kim, Michael Hoffmann, Zheng Wang, and Nujhat Tasneem.
The venues where Dimitri Antoniadis has published most often are:
Recent papers authored or co-authored by Dimitri Antoniadis include:
Throughout their career, Dimitri Antoniadis has received several professional recognitions, including the IEEE Jun-ichi Nishizawa Medal in 2015 for contributions to metal oxide semiconductor field-effect transistor physics, technology, and modeling. They were elected a Fellow of the American Academy of Arts and Sciences in 2019 and a Member of the National Academy of Engineering in 2006 for work on microelectronics in field-effect devices and for silicon process modeling. Earlier distinctions include the Semiconductor Industry Association University Researcher Award in 2004 and IEEE Fellowship in 1990 for achievements in fabrication process modeling and quantum transport devices.
J.W. Tschanz;J.T. Kao;S.G. Narendra;R. Nair
Amirhasan Nourbakhsh;Ahmad Zubair;Redwan N. Sajjad;K G Amir Tavakkoli
S. Narendra;S. Borkar;V. De;D. Antoniadis
Minjoo L. Lee;C. W. Leitz;Z. Cheng;A. J. Pitera
L.T. Su;J.E. Chung;D.A. Antoniadis;K.E. Goodson
J.L. Hoyt;H.M. Nayfeh;S. Eguchi;I. Aberg
J. H. F. Scott-Thomas;Stuart B. Field;M. A. Kastner;Henry I. Smith
Dimitri A Antoniadis;Eugene A Fitzgerald;Judy L Hoyt;ディミトリ エイ アントニアディス
M. T. Currie;C. W. Leitz;T. A. Langdo;G. Taraschi
James Kao;Anantha Chandrakasan;Dimitri Antoniadis
T. A. Langdo;C. W. Leitz;M. T. Currie;E. A. Fitzgerald
O.M. Nayfeh;C.N. Chleirigh;J. Hennessy;L. Gomez
A. Khakifirooz;O.M. Nayfeh;D. Antoniadis
D. A. Antoniadis;I. Moskowitz
C. W. Leitz;M. T. Currie;Minjoo Lawrence Lee;Z. Y. Cheng
S.Y. Chou;D.A. Antoniadis
C. W. Leitz;M. T. Currie;Minjoo Lawrence Lee;Z. Y. Cheng
D.A. Antoniadis;R.W. Dutton
I.Y. Yang;C. Vieri;A. Chandrakasan;D.A. Antoniadis
A. Lochtefeld;D.A. Antoniadis
James Tschanz;James Kao;Siva Narendra;Raj Nair
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