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Judy L. Hoyt

Judy L. Hoyt

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
9423
World Ranking
3503
National Ranking
1296

Research.com Recognitions

  • 2018 - Semiconductor Industry Association University Researcher Award

Overview

Judy L. Hoyt is affiliated with the Massachusetts Institute of Technology (MIT) in the United States. Their academic profile indicates active involvement in research recognized by the Semiconductor Industry Association University Researcher Award in 2018.

While specific details about their publication record, including recent papers, co-authors, and frequent publication venues, are not available, their connection to MIT situates them within a leading global research environment known for advancements in science and engineering.

The award received reflects engagement with semiconductor research, a field that encompasses several technical and applied disciplines related to electronics and materials science. This suggests an orientation towards work that intersects with cutting-edge technology development.

No detailed records of main fields of study, subfields, book publications, or primary research topics have been provided. The absence of these details precludes a precise delineation of their scientific focus or thematic concentration.

Best Publications

  • Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

    Shin‐ichi Takagi;Judy L. Hoyt;Jeffrey J. Welser;James F. Gibbons

  • Building Many-Core Processor-to-DRAM Networks with Monolithic CMOS Silicon Photonics

    C. Batten;A. Joshi;J. Orcutt;A. Khilo

  • Photonic ADC: overcoming the bottleneck of electronic jitter.

    Anatol Khilo;Steven J Spector;Matthew E Grein;Amir H Nejadmalayeri

  • Building Manycore Processor-to-DRAM Networks with Monolithic Silicon Photonics

    C. Batten;A. Joshi;J. Orcutt;A. Khilo

  • Fabrication and analysis of deep submicron strained-Si n-MOSFET's

    K. Rim;J.L. Hoyt;J.F. Gibbons

  • Strain dependence of the performance enhancement in strained-Si n-MOSFETs

    J. Welser;J.L. Hoyt;S. Takagi;J.F. Gibbons

  • Strained silicon MOSFET technology

    J.L. Hoyt;H.M. Nayfeh;S. Eguchi;I. Aberg

  • Process for producing semiconductor product using graded epitaxial growth

    Dimitri A Antoniadis;Eugene A Fitzgerald;Judy L Hoyt;ディミトリ エイ アントニアディス

  • Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

    O.M. Nayfeh;C.N. Chleirigh;J. Hennessy;L. Gomez

  • Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

    Zhi-Yuan Cheng;M.T. Currie;C.W. Leitz;G. Taraschi

  • Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing

    C.A. King;J.L. Hoyt;C.M. Gronet;J.F. Gibbons

  • Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

    C.A. King;J.L. Hoyt;J.F. Gibbons

  • Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovations

    D. A. Antoniadis;I. Aberg;C. Ní Chléirigh;O. M. Nayfeh

  • Silicon photonics for compact, energy-efficient interconnects [Invited]

    T. Barwicz;H. Byun;F. Gan;C. W. Holzwarth

  • Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas

    D. B. Noble;J. L. Hoyt;C. A. King;J. F. Gibbons

  • Effects of strain on boron diffusion in Si and Si1−xGex

    P. Kuo;J. L. Hoyt;J. F. Gibbons;J. E. Turner

  • Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

    Redwan N. Sajjad;Winston Chern;Judy L. Hoyt;Dimitri A. Antoniadis

  • Relaxed Silicon-Germanium on Insulator Substrate by Layer Transfer

    Zhiyuan Cheng;Gianni Taraschi;Matthew T. Currie;Chris W. Leitz

  • A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs

    H.M. Nayfeh;J.L. Hoyt;D.A. Antoniadis

  • Strained- $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

    O.M. Nayfeh;J.L. Hoyt;D.A. Antoniadis

  • Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs

    Unknown

  • Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

    T.I. Kamins;K. Nauka;J.B. Kruger;J.L. Hoyt

  • Localized substrate removal technique enabling strong-confinement microphotonics in bulk Si CMOS processes

    C.W. Holzwarth;J.S. Orcutt;Hanqing Li;M.A. Popovic

  • Limited reaction processing: Growth of Si1-xGex/Si for heterojunction bipolar transistor applications

    J.L. Hoyt;C.A. King;D.B. Noble;C.M. Gronet

  • Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

    H.M. Nayfeh;C.W. Leitz;A.J. Pitera;E.A. Fitzgerald

  • Demonstration of an electronic photonic integrated circuit in a commercial scaled bulk CMOS process

    J.S. Orcutt;A. Khilo;M.A. Popovic;C.W. Holzwarth

  • BUILDING MANY-CORE PROCESSOR-TO-DRAM NETWORKS

    Christopher Batten;Ajay Joshi;Jason Orcutt;Anatol Khilo

Frequent Co-Authors

Jason S. Orcutt
Jason S. Orcutt IBM (United States)
Miloš A. Popović
Miloš A. Popović Boston University
Vladimir Stojanovic
Vladimir Stojanovic University of California, Berkeley
Robert Hull
Robert Hull Rensselaer Polytechnic Institute
Dalaver H. Anjum
Dalaver H. Anjum Khalifa University

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