World's Best Scientists 2026 revealed!
Judy L. Hoyt

Judy L. Hoyt

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
9423
World Ranking
3503
National Ranking
1297

Judy L. Hoyt publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Judy L. Hoyt sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 209 publications — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Judy L. Hoyt D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Judy L. Hoyt sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2018 - Semiconductor Industry Association University Researcher Award

Overview

Judy L. Hoyt is affiliated with the Massachusetts Institute of Technology (MIT) in the United States. Their academic profile indicates active involvement in research recognized by the Semiconductor Industry Association University Researcher Award in 2018.

While specific details about their publication record, including recent papers, co-authors, and frequent publication venues, are not available, their connection to MIT situates them within a leading global research environment known for advancements in science and engineering.

The award received reflects engagement with semiconductor research, a field that encompasses several technical and applied disciplines related to electronics and materials science. This suggests an orientation towards work that intersects with cutting-edge technology development.

No detailed records of main fields of study, subfields, book publications, or primary research topics have been provided. The absence of these details precludes a precise delineation of their scientific focus or thematic concentration.

Best Publications

  • Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

    Shin‐ichi Takagi;Judy L. Hoyt;Jeffrey J. Welser;James F. Gibbons

  • Building Many-Core Processor-to-DRAM Networks with Monolithic CMOS Silicon Photonics

    C. Batten;A. Joshi;J. Orcutt;A. Khilo

  • Photonic ADC: overcoming the bottleneck of electronic jitter.

    Anatol Khilo;Steven J Spector;Matthew E Grein;Amir H Nejadmalayeri

  • Building Manycore Processor-to-DRAM Networks with Monolithic Silicon Photonics

    C. Batten;A. Joshi;J. Orcutt;A. Khilo

  • Fabrication and analysis of deep submicron strained-Si n-MOSFET's

    K. Rim;J.L. Hoyt;J.F. Gibbons

  • Strain dependence of the performance enhancement in strained-Si n-MOSFETs

    J. Welser;J.L. Hoyt;S. Takagi;J.F. Gibbons

  • Strained silicon MOSFET technology

    J.L. Hoyt;H.M. Nayfeh;S. Eguchi;I. Aberg

  • Process for producing semiconductor product using graded epitaxial growth

    Dimitri A Antoniadis;Eugene A Fitzgerald;Judy L Hoyt;ディミトリ エイ アントニアディス

  • Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

    O.M. Nayfeh;C.N. Chleirigh;J. Hennessy;L. Gomez

  • Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

    Zhi-Yuan Cheng;M.T. Currie;C.W. Leitz;G. Taraschi

  • Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing

    C.A. King;J.L. Hoyt;C.M. Gronet;J.F. Gibbons

  • Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

    C.A. King;J.L. Hoyt;J.F. Gibbons

  • Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovations

    D. A. Antoniadis;I. Aberg;C. Ní Chléirigh;O. M. Nayfeh

  • Silicon photonics for compact, energy-efficient interconnects [Invited]

    T. Barwicz;H. Byun;F. Gan;C. W. Holzwarth

  • Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas

    D. B. Noble;J. L. Hoyt;C. A. King;J. F. Gibbons

  • Effects of strain on boron diffusion in Si and Si1−xGex

    P. Kuo;J. L. Hoyt;J. F. Gibbons;J. E. Turner

  • Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

    Redwan N. Sajjad;Winston Chern;Judy L. Hoyt;Dimitri A. Antoniadis

  • Relaxed Silicon-Germanium on Insulator Substrate by Layer Transfer

    Zhiyuan Cheng;Gianni Taraschi;Matthew T. Currie;Chris W. Leitz

  • A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs

    H.M. Nayfeh;J.L. Hoyt;D.A. Antoniadis

  • Strained- $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

    O.M. Nayfeh;J.L. Hoyt;D.A. Antoniadis

  • Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs

    Unknown

  • Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

    T.I. Kamins;K. Nauka;J.B. Kruger;J.L. Hoyt

  • Localized substrate removal technique enabling strong-confinement microphotonics in bulk Si CMOS processes

    C.W. Holzwarth;J.S. Orcutt;Hanqing Li;M.A. Popovic

  • Limited reaction processing: Growth of Si1-xGex/Si for heterojunction bipolar transistor applications

    J.L. Hoyt;C.A. King;D.B. Noble;C.M. Gronet

  • Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

    H.M. Nayfeh;C.W. Leitz;A.J. Pitera;E.A. Fitzgerald

  • Demonstration of an electronic photonic integrated circuit in a commercial scaled bulk CMOS process

    J.S. Orcutt;A. Khilo;M.A. Popovic;C.W. Holzwarth

  • BUILDING MANY-CORE PROCESSOR-TO-DRAM NETWORKS

    Christopher Batten;Ajay Joshi;Jason Orcutt;Anatol Khilo

Frequent Co-Authors

Jason S. Orcutt
Jason S. Orcutt IBM (United States)
Miloš A. Popović
Miloš A. Popović Boston University
Franz X. Kärtner
Franz X. Kärtner Universität Hamburg
Vladimir Stojanovic
Vladimir Stojanovic University of California, Berkeley
Robert Hull
Robert Hull Rensselaer Polytechnic Institute

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