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Michael W. Geis

Michael W. Geis

D-Index & Metrics

Materials Science

D-Index
58
Citations
10071
World Ranking
7805
National Ranking
1936

Engineering and Technology

D-Index
58
Citations
10827
World Ranking
2538
National Ranking
775

Overview

Michael W. Geis is a researcher affiliated with MIT in the United States. Their work spans several interconnected fields including materials science, engineering, and mathematics, with a particular focus on materials chemistry and mathematical physics.

The research topics covered by Michael W. Geis include:

  • Diamond and Carbon-based Materials Research
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • High-pressure geophysics and materials
  • Electronic and Structural Properties of Oxides
  • Advanced Mathematical Physics Problems
  • Spectral Theory in Mathematical Physics

Their publication record comprises papers in both applied sciences and theoretical studies. Key recent papers include:

  • Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film (2020) in Diamond and Related Materials
  • Controlling the carrier density of surface conductive diamond (2021) in Diamond and Related Materials
  • Hydrogen and deuterium termination of diamond for low surface resistance and surface step control (2021) in Diamond and Related Materials
  • Interface State Reduction by Plasma-Enhanced Atomic Layer Deposition of Homogeneous Ternary Oxides (2020) in ACS Applied Materials & Interfaces
  • Concentration of quantum integrable eigenfunctions on a convex surface of revolution (2020) in arXiv (Cornell University)

Michael W. Geis frequently publishes in venues including:

  • Diamond and Related Materials
  • arXiv (Cornell University)
  • ACS Applied Materials & Interfaces
  • Applied Surface Science
  • physica status solidi (a)

The researcher collaborates regularly with several coauthors, most notably:

  • M.A. Hollis
  • G. W. Turner
  • Joseph O. Varghese
  • Jeffrey W. Daulton
  • C.H. Wuorio

Their scientific investigations focus on understanding and improving properties of diamond surface conduction, semiconductor functionality, and oxide interfaces through experimental and theoretical approaches. Their work incorporates advanced methods in materials chemistry and applied mathematics, reflecting a combination of engineering principles and mathematical physics.

Best Publications

  • Photonic ADC: overcoming the bottleneck of electronic jitter.

    Anatol Khilo;Steven J Spector;Matthew E Grein;Amir H Nejadmalayeri

  • Electron field emission from diamond and other carbon materials after H2, O2, and Cs treatment

    M. W. Geis;J. C. Twichell;J. Macaulay;K. Okano

  • Diamond cold cathode

    M.W. Geis;N.N. Efremow;J.D. Woodhouse;M.D. McAleese

  • Diamond emitters fabrication and theory

    M. W. Geis;J. C. Twichell;T. M. Lyszczarz

  • Crystallographic orientation of silicon on an amorphous substrate using an artificial surface‐relief grating and laser crystallization

    M. W. Geis;D. C. Flanders;Henry I. Smith

  • A new surface electron-emission mechanism in diamond cathodes

    M. W. Geis;N. N. Efremow;K. E. Krohn;J. C. Twichell

  • High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

    M.W. Geis;D.D. Rathman;D.J. Ehrlich;R.A. Murphy

  • Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater Oven

    M. W. Geis;Henry I. Smith;B. ‐Y. Tsaur;John C. C. Fan

  • Exceptionally high voltage Schottky diamond diodes and low boron doping

    J E Butler;M W Geis;K E Krohn;J Lawless

  • Comparison of electric field emission from nitrogen‐doped, type Ib diamond, and boron‐doped diamond

    M. W. Geis;J. C. Twichell;N. N. Efremow;K. Krohn

  • Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report

    Ernst G. Bauer;Brian W. Dodson;Daniel J. Ehrlich;Leonard C. Feldman

  • CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band

    M.W. Geis;S.J. Spector;M.E. Grein;R.T. Schulein

  • Capacitance-voltage measurements on metal-SiO/sub 2/-diamond structures fabricated with

    M.W. Geis;J.A. Gregory;B.B. Pate

  • Submicrosecond submilliwatt silicon-on-insulator thermooptic switch

    M.W. Geis;S.J. Spector;R.C. Williamson;T.M. Lyszczarz

  • Lateral epitaxy by seeded solidification for growth of single‐crystal Si films on insulators

    John C. C. Fan;M. W. Geis;Bor‐Yeu Tsaur

  • Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW -1 response

    M. W. Geis;S. J. Spector;M. E. Grein;J. U. Yoon

  • Lateral epitaxial growth by seeded solidification.

    Bor-Yeu Tsaur;John C C Fan;Michael W Geis

  • Self‐developing UV photoresist using excimer laser exposure

    T. F. Deutsch;M. W. Geis

  • A novel anisotropic dry etching technique

    M. W. Geis;G. A. Lincoln;N. Efremow;W. J. Piacentini

  • Silicon graphoepitaxy using a strip-heater oven

    M. W. Geis;D. A. Antoniadis;D. J. Silversmith;R. W. Mountain

  • Silicon photonics for compact, energy-efficient interconnects [Invited]

    T. Barwicz;H. Byun;F. Gan;C. W. Holzwarth

Frequent Co-Authors

John C. C. Fan
John C. C. Fan Kopin Corporation (United States)
Franz X. Kärtner
Franz X. Kärtner Universität Hamburg
Miloš A. Popović
Miloš A. Popović Boston University
Harry A. Atwater
Harry A. Atwater California Institute of Technology
Jason S. Orcutt
Jason S. Orcutt IBM (United States)

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