World's Best Scientists 2026 revealed!
Michael W. Geis

Michael W. Geis

D-Index & Metrics

Materials Science

D-Index
58
Citations
10071
World Ranking
7803
National Ranking
1934

Engineering and Technology

D-Index
58
Citations
10827
World Ranking
2540
National Ranking
776

Michael W. Geis publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Michael W. Geis sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 186 publications — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Michael W. Geis D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Michael W. Geis sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 58 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Michael W. Geis is a researcher affiliated with MIT in the United States. Their work spans several interconnected fields including materials science, engineering, and mathematics, with a particular focus on materials chemistry and mathematical physics.

The research topics covered by Michael W. Geis include:

  • Diamond and Carbon-based Materials Research
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • High-pressure geophysics and materials
  • Electronic and Structural Properties of Oxides
  • Advanced Mathematical Physics Problems
  • Spectral Theory in Mathematical Physics

Their publication record comprises papers in both applied sciences and theoretical studies. Key recent papers include:

  • Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film (2020) in Diamond and Related Materials
  • Controlling the carrier density of surface conductive diamond (2021) in Diamond and Related Materials
  • Hydrogen and deuterium termination of diamond for low surface resistance and surface step control (2021) in Diamond and Related Materials
  • Interface State Reduction by Plasma-Enhanced Atomic Layer Deposition of Homogeneous Ternary Oxides (2020) in ACS Applied Materials & Interfaces
  • Concentration of quantum integrable eigenfunctions on a convex surface of revolution (2020) in arXiv (Cornell University)

Michael W. Geis frequently publishes in venues including:

  • Diamond and Related Materials
  • arXiv (Cornell University)
  • ACS Applied Materials & Interfaces
  • Applied Surface Science
  • physica status solidi (a)

The researcher collaborates regularly with several coauthors, most notably:

  • M.A. Hollis
  • G. W. Turner
  • Joseph O. Varghese
  • Jeffrey W. Daulton
  • C.H. Wuorio

Their scientific investigations focus on understanding and improving properties of diamond surface conduction, semiconductor functionality, and oxide interfaces through experimental and theoretical approaches. Their work incorporates advanced methods in materials chemistry and applied mathematics, reflecting a combination of engineering principles and mathematical physics.

Best Publications

  • Photonic ADC: overcoming the bottleneck of electronic jitter.

    Anatol Khilo;Steven J Spector;Matthew E Grein;Amir H Nejadmalayeri

  • Electron field emission from diamond and other carbon materials after H2, O2, and Cs treatment

    M. W. Geis;J. C. Twichell;J. Macaulay;K. Okano

  • Diamond cold cathode

    M.W. Geis;N.N. Efremow;J.D. Woodhouse;M.D. McAleese

  • Diamond emitters fabrication and theory

    M. W. Geis;J. C. Twichell;T. M. Lyszczarz

  • Crystallographic orientation of silicon on an amorphous substrate using an artificial surface‐relief grating and laser crystallization

    M. W. Geis;D. C. Flanders;Henry I. Smith

  • A new surface electron-emission mechanism in diamond cathodes

    M. W. Geis;N. N. Efremow;K. E. Krohn;J. C. Twichell

  • High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

    M.W. Geis;D.D. Rathman;D.J. Ehrlich;R.A. Murphy

  • Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater Oven

    M. W. Geis;Henry I. Smith;B. ‐Y. Tsaur;John C. C. Fan

  • Exceptionally high voltage Schottky diamond diodes and low boron doping

    J E Butler;M W Geis;K E Krohn;J Lawless

  • Comparison of electric field emission from nitrogen‐doped, type Ib diamond, and boron‐doped diamond

    M. W. Geis;J. C. Twichell;N. N. Efremow;K. Krohn

  • Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report

    Ernst G. Bauer;Brian W. Dodson;Daniel J. Ehrlich;Leonard C. Feldman

  • CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band

    M.W. Geis;S.J. Spector;M.E. Grein;R.T. Schulein

  • Capacitance-voltage measurements on metal-SiO/sub 2/-diamond structures fabricated with

    M.W. Geis;J.A. Gregory;B.B. Pate

  • Submicrosecond submilliwatt silicon-on-insulator thermooptic switch

    M.W. Geis;S.J. Spector;R.C. Williamson;T.M. Lyszczarz

  • Lateral epitaxy by seeded solidification for growth of single‐crystal Si films on insulators

    John C. C. Fan;M. W. Geis;Bor‐Yeu Tsaur

  • Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW -1 response

    M. W. Geis;S. J. Spector;M. E. Grein;J. U. Yoon

  • Lateral epitaxial growth by seeded solidification.

    Bor-Yeu Tsaur;John C C Fan;Michael W Geis

  • Self‐developing UV photoresist using excimer laser exposure

    T. F. Deutsch;M. W. Geis

  • A novel anisotropic dry etching technique

    M. W. Geis;G. A. Lincoln;N. Efremow;W. J. Piacentini

  • Silicon graphoepitaxy using a strip-heater oven

    M. W. Geis;D. A. Antoniadis;D. J. Silversmith;R. W. Mountain

  • Silicon photonics for compact, energy-efficient interconnects [Invited]

    T. Barwicz;H. Byun;F. Gan;C. W. Holzwarth

Frequent Co-Authors

John C. C. Fan
John C. C. Fan Kopin Corporation (United States)
Franz X. Kärtner
Franz X. Kärtner Universität Hamburg
Miloš A. Popović
Miloš A. Popović Boston University
Harry A. Atwater
Harry A. Atwater California Institute of Technology
Jason S. Orcutt
Jason S. Orcutt IBM (United States)

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