World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
45
Citations
7934
World Ranking
5486
National Ranking
93

Overview

Hiromichi Ohashi is affiliated with the Tokyo Institute of Technology in Japan, where their research contributions span both medicine and engineering. Their work covers interdisciplinary fields including Pediatrics, Perinatology and Child Health, Electrical and Electronic Engineering, Molecular Biology, and Urology. This blend of expertise is reflected in the diverse publication topics and venues associated with their research output.

The scientist's recent publications demonstrate a focus on renal and fetal medicine, alongside semiconductor technologies. Notable papers include:

  • Caspase 9-induced apoptosis enables efficient fetal cell ablation and disease modeling, 2025, Nature Communications
  • Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs, 2020, IEEE Transactions on Semiconductor Manufacturing
  • P.40: Fetal metanephros development in diabetic and HIF-PHD inhibitor-treated conditions: toward xeno-regenerative renal replacement therapy, 2025, Transplantation
  • Fetal-to-Fetal Kidney Transplantation: Novel Bridge Therapy for Congenital Kidney Diseases, 2025, Journal of the American Society of Nephrology
  • Development of a Quantitative Polymerase Chain Reaction (qPCR)-Based Pathogen-Screening Protocol for Fetal Porcine Tissue Intended for Xenotransplantation, 2025, Journal of the American Society of Nephrology

Hiromichi Ohashi's frequent coauthors include Shutaro Yamamoto, Nagisa Koda, Takashi Yokoo, Kei Matsumoto, and Kenji Matsui. Collaboration appears consistent, with multiple joint works particularly in nephrology and fetal therapy research.

The primary publication venues reflect a mix of medical and engineering focuses:

  • Journal of the American Society of Nephrology
  • Nature Communications
  • IEEE Transactions on Semiconductor Manufacturing
  • Transplantation

Their research topics include:

  • Renal and related cancers
  • Prenatal Screening and Diagnostics
  • Ethics and Legal Issues in Pediatric Healthcare
  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Electrostatic Discharge in Electronics
  • Urological Disorders and Treatments

This blend of clinical and engineering themes highlights a multidisciplinary approach, crossing between biomedical applications in fetal and renal health and semiconductor device research. The work on fetal metanephros development and kidney transplantation projects addresses regenerative and transplant medicine challenges.

The integration of semiconductor manufacturing expertise aids in understanding device reliability and characteristics, as seen in their contribution to studies on bipolar transistor test structures and material properties relevant to silicon carbide technology. This cross-field engagement underscores a diverse scientific portfolio encompassing both experimental biological research and applied engineering technologies.

Best Publications

  • High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

    W. Saito;Y. Takada;M. Kuraguchi;K. Tsuda

  • Power semiconductor switching element

    Ichiro Omura;Wataru Saito;Tsuneo Ogura;Hiromichi Ohashi

  • Beamline, experimental stations and photon beam diagnostics for the hard x-ray free electron laser of SACLA

    K Tono;T Togashi;Y Inubushi;T Sato

  • Power conversion apparatus

    Hiromichi Ohashi;弘通 大橋;Yukihiko Sato;之彦 佐藤

  • Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

    Wataru Saito;Ichiro Omura;Tsuneo Ogura;Hiromichi Ohashi

  • Conductivity modulated MOSFET

    Akio Nakagawa;Hiromichi Ohashi;Yoshihiro Yamaguchi;Kiminori Watanabe

  • Revisiting the valence-band and core-level photoemission spectra of NiO.

    M. Taguchi;M. Matsunami;Y. Ishida;R. Eguchi

  • Absence of nesting in the charge-density-wave system 1 T-VS 2 as seen by photoelectron spectroscopy

    M. Mulazzi;A. Chainani;N. Katayama;R. Eguchi

  • Lateral conductivity modulated MOSFET

    Akio Nakagawa;Hiromichi Ohashi;Yoshihiro Yamaguchi;Kiminori Watanabe

  • SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution Systems

    Yukihiko Sato;Yasunori Tanaka;Akiyoshi Fukui;Mikio Yamasaki

  • Recoil effects of photoelectrons in a solid

    Y. Takata;Y. Kayanuma;M. Yabashi;K. Tamasaku

  • High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

    S. Yagi;M. Shimizu;M. Inada;Y. Yamamoto

  • Electronic structure of SrRu1-xMnxO3 studied by photoemission and x-ray absorption spectroscopy

    K. Horiba;H. Kawanaka;Y. Aiura;Tomohiko Saitoh

  • Conductivity-modulation type mosfet

    Akio Nakagawa;Hiromichi Ohashi;Kiminori Watanabe;Yoshihiro Yamaguchi

  • Oscillation effects in IGBT's related to negative capacitance phenomena

    I. Omura;W. Fichtner;H. Ohashi

  • Fermi surfaces, electron-hole asymmetry, and correlation kink in a three-dimensional Fermi liquid LaNiO 3

    R. Eguchi;A. Chainani;M. Taguchi;M. Matsunami

  • Evidence for a correlated insulator to antiferromagnetic metal transition in CrN.

    P. A. Bhobe;A. Chainani;M. Taguchi;T. Takeuchi

  • Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO 2

    R. Eguchi;M. Taguchi;M. Matsunami;K. Horiba

  • Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis

    K. Horiba;Y. Nakamura;N. Nagamura;S. Toyoda

  • A Wideband Gap Power Semiconductor Device Having A Low On-Resistance And Having A High Aavalanche Ccapability Used For Power Control

    Wataru Saito;Ichiro Omura;Hiromichi Ohashi

  • Diamond Schottky-pn diode with high forward current density and fast switching operation

    Toshiharu Makino;Satoshi Tanimoto;Yusuke Hayashi;Hiromitsu Kato

Frequent Co-Authors

Makina Yabashi
Makina Yabashi Uppsala University
Shik Shin
Shik Shin University of Tokyo
Mingfa Yao
Mingfa Yao Tianjin University
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Hajime Okumura
Hajime Okumura National Institute of Advanced Industrial Science and Technology
Toshiro Hiramoto
Toshiro Hiramoto University of Tokyo
Satoshi Yamasaki
Satoshi Yamasaki Kanazawa University
Hisamichi Kimura
Hisamichi Kimura Tohoku University
Hideyo Okushi
Hideyo Okushi National Institute of Advanced Industrial Science and Technology
Ken Takeuchi
Ken Takeuchi University of Tokyo

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