World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
45
Citations
7934
World Ranking
5488
National Ranking
93

Hiromichi Ohashi publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Hiromichi Ohashi sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 347 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Hiromichi Ohashi D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Hiromichi Ohashi sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 45 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Hiromichi Ohashi is affiliated with the Tokyo Institute of Technology in Japan, where their research contributions span both medicine and engineering. Their work covers interdisciplinary fields including Pediatrics, Perinatology and Child Health, Electrical and Electronic Engineering, Molecular Biology, and Urology. This blend of expertise is reflected in the diverse publication topics and venues associated with their research output.

The scientist's recent publications demonstrate a focus on renal and fetal medicine, alongside semiconductor technologies. Notable papers include:

  • Caspase 9-induced apoptosis enables efficient fetal cell ablation and disease modeling, 2025, Nature Communications
  • Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs, 2020, IEEE Transactions on Semiconductor Manufacturing
  • P.40: Fetal metanephros development in diabetic and HIF-PHD inhibitor-treated conditions: toward xeno-regenerative renal replacement therapy, 2025, Transplantation
  • Fetal-to-Fetal Kidney Transplantation: Novel Bridge Therapy for Congenital Kidney Diseases, 2025, Journal of the American Society of Nephrology
  • Development of a Quantitative Polymerase Chain Reaction (qPCR)-Based Pathogen-Screening Protocol for Fetal Porcine Tissue Intended for Xenotransplantation, 2025, Journal of the American Society of Nephrology

Hiromichi Ohashi's frequent coauthors include Shutaro Yamamoto, Nagisa Koda, Takashi Yokoo, Kei Matsumoto, and Kenji Matsui. Collaboration appears consistent, with multiple joint works particularly in nephrology and fetal therapy research.

The primary publication venues reflect a mix of medical and engineering focuses:

  • Journal of the American Society of Nephrology
  • Nature Communications
  • IEEE Transactions on Semiconductor Manufacturing
  • Transplantation

Their research topics include:

  • Renal and related cancers
  • Prenatal Screening and Diagnostics
  • Ethics and Legal Issues in Pediatric Healthcare
  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Electrostatic Discharge in Electronics
  • Urological Disorders and Treatments

This blend of clinical and engineering themes highlights a multidisciplinary approach, crossing between biomedical applications in fetal and renal health and semiconductor device research. The work on fetal metanephros development and kidney transplantation projects addresses regenerative and transplant medicine challenges.

The integration of semiconductor manufacturing expertise aids in understanding device reliability and characteristics, as seen in their contribution to studies on bipolar transistor test structures and material properties relevant to silicon carbide technology. This cross-field engagement underscores a diverse scientific portfolio encompassing both experimental biological research and applied engineering technologies.

Best Publications

  • High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

    W. Saito;Y. Takada;M. Kuraguchi;K. Tsuda

  • Power semiconductor switching element

    Ichiro Omura;Wataru Saito;Tsuneo Ogura;Hiromichi Ohashi

  • Beamline, experimental stations and photon beam diagnostics for the hard x-ray free electron laser of SACLA

    K Tono;T Togashi;Y Inubushi;T Sato

  • Power conversion apparatus

    Hiromichi Ohashi;弘通 大橋;Yukihiko Sato;之彦 佐藤

  • Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

    Wataru Saito;Ichiro Omura;Tsuneo Ogura;Hiromichi Ohashi

  • Conductivity modulated MOSFET

    Akio Nakagawa;Hiromichi Ohashi;Yoshihiro Yamaguchi;Kiminori Watanabe

  • Revisiting the valence-band and core-level photoemission spectra of NiO.

    M. Taguchi;M. Matsunami;Y. Ishida;R. Eguchi

  • Absence of nesting in the charge-density-wave system 1 T-VS 2 as seen by photoelectron spectroscopy

    M. Mulazzi;A. Chainani;N. Katayama;R. Eguchi

  • Lateral conductivity modulated MOSFET

    Akio Nakagawa;Hiromichi Ohashi;Yoshihiro Yamaguchi;Kiminori Watanabe

  • SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution Systems

    Yukihiko Sato;Yasunori Tanaka;Akiyoshi Fukui;Mikio Yamasaki

  • Recoil effects of photoelectrons in a solid

    Y. Takata;Y. Kayanuma;M. Yabashi;K. Tamasaku

  • High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

    S. Yagi;M. Shimizu;M. Inada;Y. Yamamoto

  • Electronic structure of SrRu1-xMnxO3 studied by photoemission and x-ray absorption spectroscopy

    K. Horiba;H. Kawanaka;Y. Aiura;Tomohiko Saitoh

  • Conductivity-modulation type mosfet

    Akio Nakagawa;Hiromichi Ohashi;Kiminori Watanabe;Yoshihiro Yamaguchi

  • Oscillation effects in IGBT's related to negative capacitance phenomena

    I. Omura;W. Fichtner;H. Ohashi

  • Fermi surfaces, electron-hole asymmetry, and correlation kink in a three-dimensional Fermi liquid LaNiO 3

    R. Eguchi;A. Chainani;M. Taguchi;M. Matsunami

  • Evidence for a correlated insulator to antiferromagnetic metal transition in CrN.

    P. A. Bhobe;A. Chainani;M. Taguchi;T. Takeuchi

  • Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO 2

    R. Eguchi;M. Taguchi;M. Matsunami;K. Horiba

  • Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis

    K. Horiba;Y. Nakamura;N. Nagamura;S. Toyoda

  • A Wideband Gap Power Semiconductor Device Having A Low On-Resistance And Having A High Aavalanche Ccapability Used For Power Control

    Wataru Saito;Ichiro Omura;Hiromichi Ohashi

  • Diamond Schottky-pn diode with high forward current density and fast switching operation

    Toshiharu Makino;Satoshi Tanimoto;Yusuke Hayashi;Hiromitsu Kato

Frequent Co-Authors

Shik Shin
Shik Shin University of Tokyo
Mingfa Yao
Mingfa Yao Tianjin University
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Hajime Okumura
Hajime Okumura National Institute of Advanced Industrial Science and Technology
Toshiro Hiramoto
Toshiro Hiramoto University of Tokyo
Satoshi Yamasaki
Satoshi Yamasaki Kanazawa University
Hisamichi Kimura
Hisamichi Kimura Tohoku University
Hideyo Okushi
Hideyo Okushi National Institute of Advanced Industrial Science and Technology
Ken Takeuchi
Ken Takeuchi University of Tokyo

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