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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
5095
World Ranking
6240
National Ranking
183

Overview

Franz Hirler is affiliated with Infineon Technologies in Germany. Their professional activities are centered within this organization, contributing to the technological and research developments associated with the company.

The available data does not list specific research papers, co-authors, or publication venues related to Franz Hirler. There is also no detailed information on main fields or subfields of study, nor specific topics of their work being documented.

Similarly, no records indicate the presence of book publications or awards connected to Franz Hirler. The absence of these details leaves the profile focused primarily on the known affiliation.

This concise overview reflects all presently available publicly accessible data concerning the academic and research background of Franz Hirler.

Best Publications

  • Method for fabricating a transistor arrangement having trench transistor cells having a field electrode

    Krumrey Joachim;Rieger Walter;Poelzl Martin;Hofer Heimo

  • Lateral trench MESFET

    Franz Hirler;Andreas Peter Meiser

  • Semiconductor component with an increased breakdown voltage in the edge area

    Ralf Henninger;Franz Hirler;Joachim Krumrey;Markus Zundel

  • Mos-transistor structure with a trench-gate electrode and a reduced specific closing resistor and methods for producing an mos transistor structure

    Franz Hirler;Wolfgang Werner

  • Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode

    Wolfgang Werner;Franz Hirler;Joachim Krumrey;Walter Rieger

  • Field plate trench transistor and method for producing it

    Franz Hirler;Walter Rieger;Thorsten Meyer;Wolfgang Klein

  • Semiconductor structure e.g. diffusion metal oxide semiconductor power transistor, has field electrodes region formed in shape of needle and smaller than maximum extension in direction perpendicular to one of main surfaces of substrate

    Hirler Franz

  • Semiconductor component having a space saving edge structure

    Franz Hirler;Ralf Siemieniec;Christian Geissler;Oliver Blank

  • Power transistor arrangement and method for fabricating it

    Martin Polzl;Franz Hirler;Oliver Haberlen;Manfred Kotek

  • Trench-mos-transistor

    Franz Hirler;Manfred Kotek;Joost Larik;Frank Pfirsch

  • Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone

    Franz Hirler;Ralf Henninger;Frank Pfirsch;Markus Zundel

  • Switch mode power supply with reduced switching losses

    Gerald Deboy;Franz Hirler;Martin März;Hans Weber

  • Trench power semiconductor component

    Ralf Henninger;Franz Hirler;Manfred Kotek;Joost Larik

  • Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices

    Rolf Weis;Franz Hirler;Martin Feldtkeller;Gerald Deboy

  • Semiconductor component with a drift region and a drift control region

    Frank Pfirsch;Anton Mauder;Armin Willmeroth;Hans-Joachim Schulze

  • Semiconductor field effect power switching device

    Franz Hirler

  • Semiconductor component including a drift zone and a drift control zone

    Stefan Sedlmaier;Anton Mauder;Armin Willmeroth;Franz Hirler

  • Method for fabricating a semiconductor component

    Michael Rüb;Herbert Schäfer;Armin Willmeroth;Anton Mauder

  • Lateral semiconductor component with a drift zone having at least one field electrode

    Franz Hirler;Armin Willmeroth;Markus Schmitt;Carolin Tolksdorf

  • Method for Producing a Semiconductor Component with Insulated Semiconductor Mesas in a Semiconductor Body

    Franz Hirler;Anton Mauder;Hermann Gruber;Hubert Rothleitner

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