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Electronics and Electrical Engineering

D-Index
34
Citations
6584
World Ranking
5711
National Ranking
158

Overview

Josef Lutz is affiliated with Chemnitz University of Technology in Germany and has a research focus within the field of Engineering, particularly Electrical and Electronic Engineering. Their work encompasses various subfields including Condensed Matter Physics, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Materials Chemistry.

The primary research topics covered by Josef Lutz include:

  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Electrostatic Discharge in Electronics
  • Semiconductor materials and devices
  • Electromagnetic Compatibility and Noise Suppression
  • Silicon and Solar Cell Technologies
  • GaN-based semiconductor devices and materials

Josef Lutz has published extensively, with notable papers including:

  • "Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices" (2020), IEEE Transactions on Power Electronics
  • "Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement" (2020), IEEE Transactions on Power Electronics
  • "Influence of Lateral Temperature Gradients on the Failure Modes at Power Cycling" (2021), IEEE Transactions on Components Packaging and Manufacturing Technology
  • "The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection" (2020), IEEE Transactions on Power Electronics
  • "High Cycle Fatigue Testing of Silicon IGBT Devices Under Application-Close Conditions" (2023), IEEE Transactions on Power Electronics

The venues where Josef Lutz frequently publishes include:

  • Microelectronics Reliability
  • IEEE Transactions on Power Electronics
  • Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
  • IEEE Transactions on Components Packaging and Manufacturing Technology
  • Power Electronic Devices and Components

Frequent collaborators of Josef Lutz are researchers who have co-authored multiple publications, such as:

  • Thomas Basler
  • Patrick Heimler
  • Xing Liu
  • Erping Deng
  • Christian Schwabe

The scope of Josef Lutz's work reflects a detailed investigation into semiconductor devices and their reliability, especially focusing on silicon carbide technologies and power electronic components. The repeated contributions to specialized IEEE journals demonstrate a sustained engagement with the electrical engineering research community.

Best Publications

  • Semiconductor Power Devices

    Josef Lutz;Heinrich Schlangenotto;Uwe Scheuermann;Rik De Doncker

  • Semiconductor Power Devices: Physics, Characteristics, Reliability

    Josef Lutz;Heinrich Schlangenotto;Uwe Scheuermann;Rik De Doncker

  • Model for Power Cycling lifetime of IGBT Modules - various factors influencing lifetime

    Reinhold Bayerer;Tobias Herrmann;Thomas Licht;Josef Lutz

  • Challenges Regarding Parallel Connection of SiC JFETs

    D. Peftitsis;R. Baburske;J. Rabkowski;J. Lutz

  • Power cycling induced failure mechanisms in solder layers

    T. Herrmann;M. Feller;J. Lutz;R. Bayerer

  • Power cycling methods for SiC MOSFETs

    C. Herold;J. Sun;P. Seidel;L. Tinschert

  • Power cycling with high temperature swing of discrete components based on different technologies

    R. Amro;J. Lutz;A. Lindemann

  • On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche

    M. Domeij;J. Lutz;D. Silber

  • Double-sided low-temperature joining technique for power cycling capability at high temperature

    R. Amro;J. Lutz;J. Rudzki;M. Thoben

  • On the Origin of Thermal Runaway in a Trench Power MOSFET

    D. Dibra;M. Stecher;S. Decker;A. Lindemann

  • Mechanical analysis of press-pack IGBTs

    Tilo Poller;Thomas Basler;Magnar Hernes;Salvatore D'Arco

  • Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes

    B. Heinze;J. Lutz;R. Rupp;M. Holz

  • Power cycling capability of Modules with SiC-Diodes

    Ch. Herold;M. Schaefer;F. Sauerland;T. Poller

  • Power cycling induced failure mechanisms in the viewpoint of rough temperature environment

    Josef Lutz;Thomas Herrmann;Mark Feller;Reinhold Bayerer

  • A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH)

    Min Chen;J. Lutz;M. Domeij;H.P. Felsl

  • The $\hbox{nn}^{+}$ -Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes

    J. Lutz;R. Baburske;Min Chen;B. Heinze

  • Dynamic avalanche and reliability of high voltage diodes

    Josef Lutz;Martin Domeij

  • Short circuit III in high power IGBTs

    Josef Lutz;Ralf Dobler;Jorge Mari;Matthias Menzel

  • Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage

    Guang Zeng;Haiyang Cao;Weinan Chen;Josef Lutz

  • Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs

    T. Poller;S. D’Arco;M. Hernes;A. Rygg Ardal

  • Possible failure modes in Press-Pack IGBTs

    Lukas Tinschert;Atle Rygg Årdal;Tilo Poller;Marco Bohlländer

  • Requirements in power cycling for precise lifetime estimation

    Christian Herold;Jörg Franke;Riteshkumar Bhojani;Andre Schleicher

Frequent Co-Authors

Mikael Östling
Mikael Östling Royal Institute of Technology
Hans-Peter Nee
Hans-Peter Nee Royal Institute of Technology
Dietrich R. T. Zahn
Dietrich R. T. Zahn Chemnitz University of Technology
Tore Undeland
Tore Undeland Norwegian University of Science and Technology
Carl-Mikael Zetterling
Carl-Mikael Zetterling Royal Institute of Technology

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