World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
6584
World Ranking
5711
National Ranking
157

Josef Lutz publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Josef Lutz sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 247 publications — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Josef Lutz D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Josef Lutz sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Josef Lutz is affiliated with Chemnitz University of Technology in Germany and has a research focus within the field of Engineering, particularly Electrical and Electronic Engineering. Their work encompasses various subfields including Condensed Matter Physics, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Materials Chemistry.

The primary research topics covered by Josef Lutz include:

  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Electrostatic Discharge in Electronics
  • Semiconductor materials and devices
  • Electromagnetic Compatibility and Noise Suppression
  • Silicon and Solar Cell Technologies
  • GaN-based semiconductor devices and materials

Josef Lutz has published extensively, with notable papers including:

  • "Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices" (2020), IEEE Transactions on Power Electronics
  • "Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement" (2020), IEEE Transactions on Power Electronics
  • "Influence of Lateral Temperature Gradients on the Failure Modes at Power Cycling" (2021), IEEE Transactions on Components Packaging and Manufacturing Technology
  • "The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection" (2020), IEEE Transactions on Power Electronics
  • "High Cycle Fatigue Testing of Silicon IGBT Devices Under Application-Close Conditions" (2023), IEEE Transactions on Power Electronics

The venues where Josef Lutz frequently publishes include:

  • Microelectronics Reliability
  • IEEE Transactions on Power Electronics
  • Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
  • IEEE Transactions on Components Packaging and Manufacturing Technology
  • Power Electronic Devices and Components

Frequent collaborators of Josef Lutz are researchers who have co-authored multiple publications, such as:

  • Thomas Basler
  • Patrick Heimler
  • Xing Liu
  • Erping Deng
  • Christian Schwabe

The scope of Josef Lutz's work reflects a detailed investigation into semiconductor devices and their reliability, especially focusing on silicon carbide technologies and power electronic components. The repeated contributions to specialized IEEE journals demonstrate a sustained engagement with the electrical engineering research community.

Best Publications

  • Semiconductor Power Devices

    Josef Lutz;Heinrich Schlangenotto;Uwe Scheuermann;Rik De Doncker

  • Semiconductor Power Devices: Physics, Characteristics, Reliability

    Josef Lutz;Heinrich Schlangenotto;Uwe Scheuermann;Rik De Doncker

  • Model for Power Cycling lifetime of IGBT Modules - various factors influencing lifetime

    Reinhold Bayerer;Tobias Herrmann;Thomas Licht;Josef Lutz

  • Challenges Regarding Parallel Connection of SiC JFETs

    D. Peftitsis;R. Baburske;J. Rabkowski;J. Lutz

  • Power cycling induced failure mechanisms in solder layers

    T. Herrmann;M. Feller;J. Lutz;R. Bayerer

  • Power cycling methods for SiC MOSFETs

    C. Herold;J. Sun;P. Seidel;L. Tinschert

  • Power cycling with high temperature swing of discrete components based on different technologies

    R. Amro;J. Lutz;A. Lindemann

  • On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche

    M. Domeij;J. Lutz;D. Silber

  • Double-sided low-temperature joining technique for power cycling capability at high temperature

    R. Amro;J. Lutz;J. Rudzki;M. Thoben

  • On the Origin of Thermal Runaway in a Trench Power MOSFET

    D. Dibra;M. Stecher;S. Decker;A. Lindemann

  • Mechanical analysis of press-pack IGBTs

    Tilo Poller;Thomas Basler;Magnar Hernes;Salvatore D'Arco

  • Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes

    B. Heinze;J. Lutz;R. Rupp;M. Holz

  • Power cycling capability of Modules with SiC-Diodes

    Ch. Herold;M. Schaefer;F. Sauerland;T. Poller

  • Power cycling induced failure mechanisms in the viewpoint of rough temperature environment

    Josef Lutz;Thomas Herrmann;Mark Feller;Reinhold Bayerer

  • A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH)

    Min Chen;J. Lutz;M. Domeij;H.P. Felsl

  • The $\hbox{nn}^{+}$ -Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes

    J. Lutz;R. Baburske;Min Chen;B. Heinze

  • Dynamic avalanche and reliability of high voltage diodes

    Josef Lutz;Martin Domeij

  • Short circuit III in high power IGBTs

    Josef Lutz;Ralf Dobler;Jorge Mari;Matthias Menzel

  • Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage

    Guang Zeng;Haiyang Cao;Weinan Chen;Josef Lutz

  • Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs

    T. Poller;S. D’Arco;M. Hernes;A. Rygg Ardal

  • Possible failure modes in Press-Pack IGBTs

    Lukas Tinschert;Atle Rygg Årdal;Tilo Poller;Marco Bohlländer

  • Requirements in power cycling for precise lifetime estimation

    Christian Herold;Jörg Franke;Riteshkumar Bhojani;Andre Schleicher

Frequent Co-Authors

Mikael Östling
Mikael Östling Royal Institute of Technology
Hans-Peter Nee
Hans-Peter Nee Royal Institute of Technology
Dietrich R. T. Zahn
Dietrich R. T. Zahn Chemnitz University of Technology
Tore Undeland
Tore Undeland Norwegian University of Science and Technology
Carl-Mikael Zetterling
Carl-Mikael Zetterling Royal Institute of Technology

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