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Francesco Iannuzzo

Francesco Iannuzzo

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5538
World Ranking
5148
National Ranking
37

Overview

Francesco Iannuzzo is affiliated with Aalborg University in Denmark and has an extensive publication record in the field of engineering, particularly electrical and electronic engineering. Their research focuses on semiconductor technologies, power electronics, and related subfields, with notable contributions in silicon carbide semiconductor technologies.

The primary fields of study associated with Francesco Iannuzzo include:

  • Engineering

Within these, their work centers on the following subfields:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Automotive Engineering
  • Renewable Energy, Sustainability and the Environment
  • Control and Systems Engineering

The main research topics covered by their work are:

  • Silicon Carbide Semiconductor Technologies
  • Electromagnetic Compatibility and Noise Suppression
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Electrostatic Discharge in Electronics
  • GaN-based semiconductor devices and materials
  • Silicon and Solar Cell Technologies

Frequent co-authors collaborating with Francesco Iannuzzo include:

  • Frede Blaabjerg
  • Amir Sajjad Bahman
  • Kaichen Zhang
  • Haoze Luo
  • Cao Zhan

They have published numerous papers in respected venues. Their most frequent publication outlets are:

  • Microelectronics Reliability
  • IEEE Journal of Emerging and Selected Topics in Power Electronics
  • IEEE Transactions on Power Electronics
  • IEEE Transactions on Industry Applications
  • IEEE Access

Selected recent papers authored or co-authored by Francesco Iannuzzo are:

  • Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches, 2020, IEEE Access
  • Lifetime Evaluation of Three-Level Inverters for 1500-V Photovoltaic Systems, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Two Decades of Condition Monitoring Methods for Power Devices, 2021, Electronics
  • Lifetime Analysis of Metallized Polypropylene Capacitors in Modular Multilevel Converter Based on Finite Element Method, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Online Junction Temperature and Current Simultaneous Extraction for SiC MOSFETs With Electroluminescence Effect, 2021, IEEE Transactions on Power Electronics

In addition to journal articles, Francesco Iannuzzo has contributed to book publications. The known book is:

  • Modern Power Electronic Devices: Physics, applications, and reliability, published by Institution of Engineering and Technology in 2020

Best Publications

  • Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview

    Rui Wu;Frede Blaabjerg;Huai Wang;Marco Liserre

  • A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules

    Amir Sajjad Bahman;Ke Ma;Pramod Ghimire;Francesco Iannuzzo

  • IGBT Junction Temperature Measurement via Peak Gate Current

    Nick Baker;Stig Munk-Nielsen;Francesco Iannuzzo;Marco Liserre

  • A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

    Rui Wu;Huai Wang;Kristian Bonderup Pedersen;Ke Ma

  • Reliability Oriented Design Tool For the New Generation of Grid Connected PV-Inverters

    Nicolae Cristian Sintamarean;Frede Blaabjerg;Huai Wang;Francesco Iannuzzo

  • High-Voltage, High-Performance Switch Using Series-Connected IGBTs

    Carmine Abbate;Giovanni Busatto;Francesco Iannuzzo

  • IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

    Nick Baker;Laurent Dupont;Stig Munk-Nielsen;Francesco Iannuzzo

  • A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

    Paula Diaz Reigosa;Francesco Iannuzzo;Haoze Luo;Frede Blaabjerg

  • A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

    Lorenzo Ceccarelli;Paula Diaz Reigosa;Francesco Iannuzzo;Frede Blaabjerg

  • Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

    Lorenzo Ceccarelli;Ramchandra M. Kotecha;Amir Sajjad Bahman;Francesco Iannuzzo

  • Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches

    Keting Hu;Zhigang Liu;Yongheng Yang;Francesco Iannuzzo

  • Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

    Emre Gurpinar;Francesco Iannuzzo;Yongheng Yang;Alberto Castellazzi

  • Physical CAD model for high-voltage IGBTs based on lumped-charge approach

    F. Iannuzzo;G. Busatto

  • Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

    Haoze Luo;Francesco Iannuzzo;Marcello Turnaturi

  • Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

    Yuxiang Chen;Wuhua Li;Francesco Iannuzzo;Haoze Luo

  • Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

    Haoze Luo;Wuhua Li;Francesco Iannuzzo;Xiangning He

  • Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

    C. Abbate;G. Busatto;P. Cova;N. Delmonte

  • Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_{C}/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules

    Yuxiang Chen;Haoze Luo;Wuhua Li;Xiangning He

  • Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

    Haoze Luo;Francesco Iannuzzo;Nick Baker;Frede Blaabjerg

  • Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

    Carmine Abbate;Giovanni Busatto;Francesco Iannuzzo;S. Mattiazzo

  • Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation

    Uimin Choi;Frede Blaabjerg;Francesco Iannuzzo;Francesco Iannuzzo;Sabine Jørgensen

  • A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations

    Rui Wu;Huai Wang;Ke Ma;Pramod Ghimire

Frequent Co-Authors

Frede Blaabjerg
Frede Blaabjerg Aalborg University
Huai Wang
Huai Wang Aalborg University
Wuhua Li
Wuhua Li Zhejiang University
Xiangning He
Xiangning He Zhejiang University
Yongheng Yang
Yongheng Yang Zhejiang University
Stig Munk-Nielsen
Stig Munk-Nielsen Aalborg University
Giorgio Spiazzi
Giorgio Spiazzi University of Padua
Marco Liserre
Marco Liserre Kiel University
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Ke Ma
Ke Ma Shanghai Jiao Tong University

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