World's Best Scientists 2026 revealed!
Francesco Iannuzzo

Francesco Iannuzzo

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5538
World Ranking
5148
National Ranking
37

Francesco Iannuzzo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Francesco Iannuzzo sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 314 publications — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Francesco Iannuzzo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Francesco Iannuzzo sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Francesco Iannuzzo is affiliated with Aalborg University in Denmark and has an extensive publication record in the field of engineering, particularly electrical and electronic engineering. Their research focuses on semiconductor technologies, power electronics, and related subfields, with notable contributions in silicon carbide semiconductor technologies.

The primary fields of study associated with Francesco Iannuzzo include:

  • Engineering

Within these, their work centers on the following subfields:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Automotive Engineering
  • Renewable Energy, Sustainability and the Environment
  • Control and Systems Engineering

The main research topics covered by their work are:

  • Silicon Carbide Semiconductor Technologies
  • Electromagnetic Compatibility and Noise Suppression
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Electrostatic Discharge in Electronics
  • GaN-based semiconductor devices and materials
  • Silicon and Solar Cell Technologies

Frequent co-authors collaborating with Francesco Iannuzzo include:

  • Frede Blaabjerg
  • Amir Sajjad Bahman
  • Kaichen Zhang
  • Haoze Luo
  • Cao Zhan

They have published numerous papers in respected venues. Their most frequent publication outlets are:

  • Microelectronics Reliability
  • IEEE Journal of Emerging and Selected Topics in Power Electronics
  • IEEE Transactions on Power Electronics
  • IEEE Transactions on Industry Applications
  • IEEE Access

Selected recent papers authored or co-authored by Francesco Iannuzzo are:

  • Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches, 2020, IEEE Access
  • Lifetime Evaluation of Three-Level Inverters for 1500-V Photovoltaic Systems, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Two Decades of Condition Monitoring Methods for Power Devices, 2021, Electronics
  • Lifetime Analysis of Metallized Polypropylene Capacitors in Modular Multilevel Converter Based on Finite Element Method, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Online Junction Temperature and Current Simultaneous Extraction for SiC MOSFETs With Electroluminescence Effect, 2021, IEEE Transactions on Power Electronics

In addition to journal articles, Francesco Iannuzzo has contributed to book publications. The known book is:

  • Modern Power Electronic Devices: Physics, applications, and reliability, published by Institution of Engineering and Technology in 2020

Best Publications

  • Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview

    Rui Wu;Frede Blaabjerg;Huai Wang;Marco Liserre

  • A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules

    Amir Sajjad Bahman;Ke Ma;Pramod Ghimire;Francesco Iannuzzo

  • IGBT Junction Temperature Measurement via Peak Gate Current

    Nick Baker;Stig Munk-Nielsen;Francesco Iannuzzo;Marco Liserre

  • A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

    Rui Wu;Huai Wang;Kristian Bonderup Pedersen;Ke Ma

  • Reliability Oriented Design Tool For the New Generation of Grid Connected PV-Inverters

    Nicolae Cristian Sintamarean;Frede Blaabjerg;Huai Wang;Francesco Iannuzzo

  • High-Voltage, High-Performance Switch Using Series-Connected IGBTs

    Carmine Abbate;Giovanni Busatto;Francesco Iannuzzo

  • IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

    Nick Baker;Laurent Dupont;Stig Munk-Nielsen;Francesco Iannuzzo

  • A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

    Paula Diaz Reigosa;Francesco Iannuzzo;Haoze Luo;Frede Blaabjerg

  • A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

    Lorenzo Ceccarelli;Paula Diaz Reigosa;Francesco Iannuzzo;Frede Blaabjerg

  • Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

    Lorenzo Ceccarelli;Ramchandra M. Kotecha;Amir Sajjad Bahman;Francesco Iannuzzo

  • Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches

    Keting Hu;Zhigang Liu;Yongheng Yang;Francesco Iannuzzo

  • Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

    Emre Gurpinar;Francesco Iannuzzo;Yongheng Yang;Alberto Castellazzi

  • Physical CAD model for high-voltage IGBTs based on lumped-charge approach

    F. Iannuzzo;G. Busatto

  • Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

    Haoze Luo;Francesco Iannuzzo;Marcello Turnaturi

  • Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

    Yuxiang Chen;Wuhua Li;Francesco Iannuzzo;Haoze Luo

  • Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

    Haoze Luo;Wuhua Li;Francesco Iannuzzo;Xiangning He

  • Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

    C. Abbate;G. Busatto;P. Cova;N. Delmonte

  • Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_{C}/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules

    Yuxiang Chen;Haoze Luo;Wuhua Li;Xiangning He

  • Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

    Haoze Luo;Francesco Iannuzzo;Nick Baker;Frede Blaabjerg

  • Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

    Carmine Abbate;Giovanni Busatto;Francesco Iannuzzo;S. Mattiazzo

  • Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation

    Uimin Choi;Frede Blaabjerg;Francesco Iannuzzo;Francesco Iannuzzo;Sabine Jørgensen

  • A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations

    Rui Wu;Huai Wang;Ke Ma;Pramod Ghimire

Frequent Co-Authors

Frede Blaabjerg
Frede Blaabjerg Aalborg University
Huai Wang
Huai Wang Aalborg University
Wuhua Li
Wuhua Li Zhejiang University
Xiangning He
Xiangning He Zhejiang University
Yongheng Yang
Yongheng Yang Zhejiang University
Stig Munk-Nielsen
Stig Munk-Nielsen Aalborg University
Giorgio Spiazzi
Giorgio Spiazzi University of Padua
Marco Liserre
Marco Liserre Kiel University
Marco A. Riva
Marco A. Riva University of Milan
Ke Ma
Ke Ma Shanghai Jiao Tong University

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