World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
6330
World Ranking
4890
National Ranking
722

Kuang Sheng publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kuang Sheng sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 249 publications — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Kuang Sheng D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kuang Sheng sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Kuang Sheng is affiliated with Zhejiang University in China and has contributed extensively to the field of engineering, with a specific focus on electrical and electronic engineering. Their research encompasses a range of subfields including mechanical engineering, renewable energy, sustainability and the environment, electronic, optical and magnetic materials, and materials chemistry.

Their work covers several main topics within semiconductor technologies and energy conversion. These include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Electromagnetic Compatibility and Noise Suppression
  • Electrocatalysts for Energy Conversion
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced battery technologies research
  • GaN-based semiconductor devices and materials

Kuang Sheng's recent published papers illustrate the breadth of their research interests and contributions:

  • "CoNi Nanoparticles Supported on N-Doped Bifunctional Hollow Carbon Composites as High-Performance ORR/OER Catalysts for Rechargeable Zn-Air Batteries", 2021, ACS Applied Materials & Interfaces
  • "Investigation of Z-type manifold microchannel cooling for ultra-high heat flux dissipation in power electronic devices", 2023, International Journal of Heat and Mass Transfer
  • "Recent advances in regulating the performance of acid oxygen reduction reaction on carbon-supported non-precious metal single atom catalysts", 2022, Journal of Energy Chemistry
  • "Single-cell transcriptomic analysis reveals the developmental trajectory and transcriptional regulatory networks of pigment glands in Gossypium bickii", 2023, Molecular Plant
  • "4H-SiC Super-Junction JFET: Design and Experimental Demonstration", 2020, IEEE Electron Device Letters

In terms of collaborative work, Kuang Sheng has frequently co-authored with several researchers, reflecting a diverse network of academic cooperation. Frequent co-authors include:

  • Na Ren
  • Hengyu Wang
  • Qing Guo
  • Hongyi Xu
  • Ce Wang

Their publications predominantly appear in established venues in the field of electronic devices and power electronics. These venues include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • IEEE Transactions on Power Electronics
  • SSRN Electronic Journal
  • IEEE Journal of Emerging and Selected Topics in Power Electronics

Kuang Sheng's body of work contributes to ongoing developments in semiconductor technologies and energy-related materials, emphasizing both theoretical advances and practical device applications across various interdisciplinary sectors within engineering.

Best Publications

  • A review of IGBT models

    Kuang Sheng;B.W. Williams;S.J. Finney

  • A Bidirectional LLC Resonant Converter With Automatic Forward and Backward Mode Transition

    Tianyang Jiang;Junming Zhang;Xinke Wu;Kuang Sheng

  • Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

    Liangchun C Yu;G T Dunne;K S Matocha;Kin P Cheung

  • High Temperature Stability and the Performance Degradation of SiC MOSFETs

    Weicheng Zhou;Xueqian Zhong;Kuang Sheng

  • Dynamic on -State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

    Rui Li;Xinke Wu;Shu Yang;Kuang Sheng

  • Circulating Current and ZVS-on of a Dual Active Bridge DC-DC Converter: A Review

    Shuai Shao;Hui Chen;Xinke Wu;Junming Zhang

  • Optimal Phase-Shift Control to Minimize Reactive Power for a Dual Active Bridge DC–DC Converter

    Shuai Shao;Mingming Jiang;Weiwen Ye;Yucen Li

  • SOI power device

    Gehan Anil Joseph Amaratunga;Florin Udrea

  • Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

    Shu Yang;Shaowen Han;Kuang Sheng;Kevin J. Chen

  • High-Voltage and High- $I_{ ext {ON}}/I_{ ext {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination

    Shaowen Han;Shu Yang;Kuang Sheng

  • Maximum Junction Temperatures of SiC Power Devices

    Kuang Sheng

  • A Bidirectional Three-Level LLC Resonant Converter With PWAM Control

    Tianyang Jiang;Junming Zhang;Xinke Wu;Kuang Sheng

  • A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

    Xinke Wu;Shidong Cheng;Qiang Xiao;Kuang Sheng

  • Random telegraph noise in highly scaled nMOSFETs

    J.P. Campbell;J. Qin;K.P. Cheung;L.C. Yu

  • An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature

    Xueqian Zhong;Xinke Wu;Weicheng Zhou;Kuang Sheng

  • Lateral unbalanced super junction (USJ)/3D-RESURF for high breakdown voltage on SOI

    R. Ng;F. Udrea;K. Sheng;K. Ueno

  • Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

    Shu Yang;Chunhua Zhou;Shaowen Han;Jin Wei

  • A new analytical IGBT model with improved electrical characteristics

    Kuang Sheng;S.J. Finney;B.W. Williams

  • Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

    Shaowen Han;Shu Yang;Kuang Sheng

  • Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes

    Na Ren;Jue Wang;Kuang Sheng

Frequent Co-Authors

Shu Yang
Shu Yang Zhejiang University
Xinke Wu
Xinke Wu Zhejiang University
Junming Zhang
Junming Zhang Zhejiang University
Florin Udrea
Florin Udrea University of Cambridge
Gehan A. J. Amaratunga
Gehan A. J. Amaratunga University of Cambridge
John S. Suehle
John S. Suehle National Institute of Standards and Technology
Barry W. Williams
Barry W. Williams University of Strathclyde
Stephen J. Finney
Stephen J. Finney University of Edinburgh
Richard A. McMahon
Richard A. McMahon University of Warwick
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology

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Related Online Degrees & Career Pathways

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Obtaining a project manager bachelor degree online offers a flexible path to gaining essential management qualifications while continuing to build technical proficiency. This is particularly valuable for those aiming for roles that blend engineering knowledge with team coordination and resource management.

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Additionally, an online masters in instructional design can suit engineers interested in training and education roles within technical fields. This expertise supports the development of effective educational materials and training programs for engineers and technicians alike.

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