World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
6330
World Ranking
4890
National Ranking
721

Overview

Kuang Sheng is affiliated with Zhejiang University in China and has contributed extensively to the field of engineering, with a specific focus on electrical and electronic engineering. Their research encompasses a range of subfields including mechanical engineering, renewable energy, sustainability and the environment, electronic, optical and magnetic materials, and materials chemistry.

Their work covers several main topics within semiconductor technologies and energy conversion. These include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Electromagnetic Compatibility and Noise Suppression
  • Electrocatalysts for Energy Conversion
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced battery technologies research
  • GaN-based semiconductor devices and materials

Kuang Sheng's recent published papers illustrate the breadth of their research interests and contributions:

  • "CoNi Nanoparticles Supported on N-Doped Bifunctional Hollow Carbon Composites as High-Performance ORR/OER Catalysts for Rechargeable Zn-Air Batteries", 2021, ACS Applied Materials & Interfaces
  • "Investigation of Z-type manifold microchannel cooling for ultra-high heat flux dissipation in power electronic devices", 2023, International Journal of Heat and Mass Transfer
  • "Recent advances in regulating the performance of acid oxygen reduction reaction on carbon-supported non-precious metal single atom catalysts", 2022, Journal of Energy Chemistry
  • "Single-cell transcriptomic analysis reveals the developmental trajectory and transcriptional regulatory networks of pigment glands in Gossypium bickii", 2023, Molecular Plant
  • "4H-SiC Super-Junction JFET: Design and Experimental Demonstration", 2020, IEEE Electron Device Letters

In terms of collaborative work, Kuang Sheng has frequently co-authored with several researchers, reflecting a diverse network of academic cooperation. Frequent co-authors include:

  • Na Ren
  • Hengyu Wang
  • Qing Guo
  • Hongyi Xu
  • Ce Wang

Their publications predominantly appear in established venues in the field of electronic devices and power electronics. These venues include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • IEEE Transactions on Power Electronics
  • SSRN Electronic Journal
  • IEEE Journal of Emerging and Selected Topics in Power Electronics

Kuang Sheng's body of work contributes to ongoing developments in semiconductor technologies and energy-related materials, emphasizing both theoretical advances and practical device applications across various interdisciplinary sectors within engineering.

Best Publications

  • A review of IGBT models

    Kuang Sheng;B.W. Williams;S.J. Finney

  • A Bidirectional LLC Resonant Converter With Automatic Forward and Backward Mode Transition

    Tianyang Jiang;Junming Zhang;Xinke Wu;Kuang Sheng

  • Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

    Liangchun C Yu;G T Dunne;K S Matocha;Kin P Cheung

  • High Temperature Stability and the Performance Degradation of SiC MOSFETs

    Weicheng Zhou;Xueqian Zhong;Kuang Sheng

  • Dynamic on -State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

    Rui Li;Xinke Wu;Shu Yang;Kuang Sheng

  • Circulating Current and ZVS-on of a Dual Active Bridge DC-DC Converter: A Review

    Shuai Shao;Hui Chen;Xinke Wu;Junming Zhang

  • Optimal Phase-Shift Control to Minimize Reactive Power for a Dual Active Bridge DC–DC Converter

    Shuai Shao;Mingming Jiang;Weiwen Ye;Yucen Li

  • SOI power device

    Gehan Anil Joseph Amaratunga;Florin Udrea

  • Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

    Shu Yang;Shaowen Han;Kuang Sheng;Kevin J. Chen

  • High-Voltage and High- $I_{ ext {ON}}/I_{ ext {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination

    Shaowen Han;Shu Yang;Kuang Sheng

  • Maximum Junction Temperatures of SiC Power Devices

    Kuang Sheng

  • A Bidirectional Three-Level LLC Resonant Converter With PWAM Control

    Tianyang Jiang;Junming Zhang;Xinke Wu;Kuang Sheng

  • A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

    Xinke Wu;Shidong Cheng;Qiang Xiao;Kuang Sheng

  • Random telegraph noise in highly scaled nMOSFETs

    J.P. Campbell;J. Qin;K.P. Cheung;L.C. Yu

  • An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature

    Xueqian Zhong;Xinke Wu;Weicheng Zhou;Kuang Sheng

  • Lateral unbalanced super junction (USJ)/3D-RESURF for high breakdown voltage on SOI

    R. Ng;F. Udrea;K. Sheng;K. Ueno

  • Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

    Shu Yang;Chunhua Zhou;Shaowen Han;Jin Wei

  • A new analytical IGBT model with improved electrical characteristics

    Kuang Sheng;S.J. Finney;B.W. Williams

  • Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

    Shaowen Han;Shu Yang;Kuang Sheng

  • Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes

    Na Ren;Jue Wang;Kuang Sheng

Frequent Co-Authors

Shu Yang
Shu Yang Zhejiang University
Xinke Wu
Xinke Wu Zhejiang University
Junming Zhang
Junming Zhang Zhejiang University
Florin Udrea
Florin Udrea University of Cambridge
Gehan A. J. Amaratunga
Gehan A. J. Amaratunga University of Cambridge
John S. Suehle
John S. Suehle National Institute of Standards and Technology
Barry W. Williams
Barry W. Williams University of Strathclyde
Stephen J. Finney
Stephen J. Finney University of Edinburgh
Richard A. McMahon
Richard A. McMahon University of Warwick
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology

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