World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
5538
World Ranking
5754
National Ranking
826

Overview

Shu Yang is affiliated with Zhejiang University in China and focuses research efforts primarily in engineering, materials science, and physics and astronomy. Their work spans key subfields including electrical and electronic engineering, electronic, optical and magnetic materials, condensed matter physics, materials chemistry, and renewable energy, sustainability, and the environment.

The scientist's main research topics encompass Ga2O3 and related materials, GaN-based semiconductor devices and materials, silicon carbide semiconductor technologies, ZnO doping and properties, semiconductor materials and devices, advanced photocatalysis techniques, and analytical chemistry and sensors.

Recent publications reflect a concentration on semiconductor device technology and materials engineering. Notable papers include:

  • "Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension" (2023) published in IEEE Transactions on Electron Devices
  • "Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact" (2021) published in IEEE Electron Device Letters
  • "Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination" (2024) published in IEEE Transactions on Electron Devices
  • "On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure" (2023) published in IEEE Electron Device Letters
  • "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain" (2023) published in IEEE Transactions on Electron Devices

Shu Yang frequently collaborates with several co-authors, including Guangwei Xu, Shibing Long, Kuang Sheng, Weibing Hao, and Xuanze Zhou, each contributing to multiple joint publications.

Their work is commonly published in venues specializing in electron devices and semiconductor technologies, with frequent contributions to the following journals and conferences:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Microsystems & Nanoengineering
  • IEEE Journal of the Electron Devices Society

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • 600-V Normally Off ${ m SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

    Zhikai Tang;Qimeng Jiang;Yunyou Lu;Sen Huang

  • Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

    Sen Huang;Qimeng Jiang;Shu Yang;Chunhua Zhou

  • Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal?Insulator?Semiconductor High-Electron Mobility Transistors

    Sen Huang;Shu Yang;John Roberts;Kevin J. Chen

  • High-Quality Interface in ${ m Al}_{2}{ m O}_{3}/{ m GaN}/{ m GaN}/{ m AlGaN}/{ m GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Dynamic on -State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

    Rui Li;Xinke Wu;Shu Yang;Kuang Sheng

  • Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

    Sen Huang;Qimeng Jiang;Shu Yang;Zhikai Tang

  • Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

    Shu Yang;Shaowen Han;Kuang Sheng;Kevin J. Chen

  • High-Voltage and High- $I_{ ext {ON}}/I_{ ext {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination

    Shaowen Han;Shu Yang;Kuang Sheng

  • Al 2 O 3 /AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

    Shenghou Liu;Shu Yang;Zhikai Tang;Qimeng Jiang

  • Characterization of Leakage and Reliability of SiN x Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

    Mengyuan Hua;Cheng Liu;Shu Yang;Shenghou Liu

  • GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN x as Gate Dielectric

    Mengyuan Hua;Cheng Liu;Shu Yang;Shenghou Liu

  • Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

    Shenghou Liu;Shu Yang;Zhikai Tang;Qimeng Jiang

  • AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

    Shu Yang;Shenghou Liu;Yunyou Lu;Cheng Liu

  • Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

    Shu Yang;Chunhua Zhou;Shaowen Han;Jin Wei

  • Mapping of interface traps in high-performance Al 2 O 3 /AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

    Shaowen Han;Shu Yang;Kuang Sheng

  • Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs

    Yunyou Lu;Shu Yang;Qimeng Jiang;Zhikai Tang

  • Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier”

    Cheng Liu;Shu Yang;Shenghou Liu;Zhikai Tang

  • Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

    Shaowen Han;Shu Yang;Rui Li;Xinke Wu

  • Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer

    Shenghou Liu;Shu Yang;Zhikai Tang;Qimeng Jiang

Frequent Co-Authors

Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Kuang Sheng
Kuang Sheng Zhejiang University
Sen Huang
Sen Huang Chinese Academy of Sciences
Xinke Wu
Xinke Wu Zhejiang University
Qing-Tai Zhao
Qing-Tai Zhao Peking University
Jürgen Schubert
Jürgen Schubert Forschungszentrum Jülich
Florin Udrea
Florin Udrea University of Cambridge
Enrico Zanoni
Enrico Zanoni University of Padua
Wen-Chang Chen
Wen-Chang Chen National Taiwan University

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