World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
5538
World Ranking
5754
National Ranking
827

Shu Yang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Shu Yang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 115 publications — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Shu Yang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Shu Yang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Shu Yang is affiliated with Zhejiang University in China and focuses research efforts primarily in engineering, materials science, and physics and astronomy. Their work spans key subfields including electrical and electronic engineering, electronic, optical and magnetic materials, condensed matter physics, materials chemistry, and renewable energy, sustainability, and the environment.

The scientist's main research topics encompass Ga2O3 and related materials, GaN-based semiconductor devices and materials, silicon carbide semiconductor technologies, ZnO doping and properties, semiconductor materials and devices, advanced photocatalysis techniques, and analytical chemistry and sensors.

Recent publications reflect a concentration on semiconductor device technology and materials engineering. Notable papers include:

  • "Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension" (2023) published in IEEE Transactions on Electron Devices
  • "Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact" (2021) published in IEEE Electron Device Letters
  • "Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination" (2024) published in IEEE Transactions on Electron Devices
  • "On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure" (2023) published in IEEE Electron Device Letters
  • "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain" (2023) published in IEEE Transactions on Electron Devices

Shu Yang frequently collaborates with several co-authors, including Guangwei Xu, Shibing Long, Kuang Sheng, Weibing Hao, and Xuanze Zhou, each contributing to multiple joint publications.

Their work is commonly published in venues specializing in electron devices and semiconductor technologies, with frequent contributions to the following journals and conferences:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Microsystems & Nanoengineering
  • IEEE Journal of the Electron Devices Society

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • 600-V Normally Off ${ m SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

    Zhikai Tang;Qimeng Jiang;Yunyou Lu;Sen Huang

  • Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

    Sen Huang;Qimeng Jiang;Shu Yang;Chunhua Zhou

  • Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal?Insulator?Semiconductor High-Electron Mobility Transistors

    Sen Huang;Shu Yang;John Roberts;Kevin J. Chen

  • High-Quality Interface in ${ m Al}_{2}{ m O}_{3}/{ m GaN}/{ m GaN}/{ m AlGaN}/{ m GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Dynamic on -State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

    Rui Li;Xinke Wu;Shu Yang;Kuang Sheng

  • Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

    Sen Huang;Qimeng Jiang;Shu Yang;Zhikai Tang

  • Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

    Shu Yang;Shaowen Han;Kuang Sheng;Kevin J. Chen

  • High-Voltage and High- $I_{ ext {ON}}/I_{ ext {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination

    Shaowen Han;Shu Yang;Kuang Sheng

  • Al 2 O 3 /AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

    Shenghou Liu;Shu Yang;Zhikai Tang;Qimeng Jiang

  • Characterization of Leakage and Reliability of SiN x Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

    Mengyuan Hua;Cheng Liu;Shu Yang;Shenghou Liu

  • GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN x as Gate Dielectric

    Mengyuan Hua;Cheng Liu;Shu Yang;Shenghou Liu

  • Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

    Shenghou Liu;Shu Yang;Zhikai Tang;Qimeng Jiang

  • AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

    Shu Yang;Shenghou Liu;Yunyou Lu;Cheng Liu

  • Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

    Shu Yang;Chunhua Zhou;Shaowen Han;Jin Wei

  • Mapping of interface traps in high-performance Al 2 O 3 /AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

    Shaowen Han;Shu Yang;Kuang Sheng

  • Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs

    Yunyou Lu;Shu Yang;Qimeng Jiang;Zhikai Tang

  • Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier”

    Cheng Liu;Shu Yang;Shenghou Liu;Zhikai Tang

  • Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

    Shaowen Han;Shu Yang;Rui Li;Xinke Wu

  • Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer

    Shenghou Liu;Shu Yang;Zhikai Tang;Qimeng Jiang

Frequent Co-Authors

Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Kuang Sheng
Kuang Sheng Zhejiang University
Sen Huang
Sen Huang Chinese Academy of Sciences
Xinke Wu
Xinke Wu Zhejiang University
Qing-Tai Zhao
Qing-Tai Zhao Peking University
Baoling Huang
Baoling Huang Hong Kong University of Science and Technology
Florin Udrea
Florin Udrea University of Cambridge
Yue Hao
Yue Hao Xidian University
Jürgen Schubert
Jürgen Schubert Forschungszentrum Jülich
Wen-Chang Chen
Wen-Chang Chen National Taiwan University

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