World's Best Scientists 2026 revealed!
Stefaan Decoutere

Stefaan Decoutere

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
11710
World Ranking
1888
National Ranking
43

Materials Science

D-Index
57
Citations
11172
World Ranking
7986
National Ranking
92

Stefaan Decoutere publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Stefaan Decoutere sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 408 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Stefaan Decoutere D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Stefaan Decoutere sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 58 D-Index — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Stefaan Decoutere is affiliated with Imec in Belgium and has a significant research output primarily in the fields of Engineering and Physics and Astronomy. Their work focuses extensively on Electrical and Electronic Engineering as well as Condensed Matter Physics, with a notable emphasis on Semiconductor materials and devices.

The main topics of their research include GaN-based semiconductor devices and materials, which constitute the largest share of their publications. Additional areas of focus encompass Silicon Carbide Semiconductor Technologies, Ga2O3 and related materials, Semiconductor Quantum Structures and Devices, Advancements in Semiconductor Devices and Circuit Design, and Semiconductor materials and interfaces.

Decoutere has contributed a range of recent papers centered on the behavior and characteristics of p-GaN Gate HEMTs. Notable publications include:

  • Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization, 2020, IEEE Electron Device Letters
  • Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics, 2020, IEEE Transactions on Power Electronics
  • Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs, 2022, IEEE Transactions on Electron Devices
  • High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs, 2021, IEEE Transactions on Electron Devices
  • TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs, 2021, IEEE Transactions on Electron Devices

The scholar's research has been published frequently in several venues, with multiple papers appearing in IEEE Transactions on Electron Devices, Microelectronics Reliability, and IEEE Electron Device Letters. Additional publication venues include Applied Physics Letters and Solid-State Electronics.

Stefaan Decoutere collaborates regularly with a group of co-authors, including Benoit Bakeroot, Matteo Borga, Karen Geens, Niels Posthuma, and Shuzhen You, with whom they have sustained multiple joint publications.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • A 0.16pJ/Conversion-Step 2.5mW 1.25GS/s 4b ADC in a 90nm Digital CMOS Process

    G. Van der Plas;S. Decoutere;S. Donnay

  • Transient enhanced diffusion of Boron in Si

    Suresh Jain;Wim Schoenmaker;Richard Lindsay;Peter Stolk

  • CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

    M. Van Hove;S. Boulay;S. R. Bahl;S. Stoffels

  • Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

    Tian-Li Wu;Denis Marcon;Shuzhen You;Niels Posthuma

  • A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS

    D. Linten;S. Thijs;M.I. Natarajan;P. Wambacq

  • Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors

    S. Jenei;B.K.J.C. Nauwelaers;S. Decoutere

  • An easy-to-use mismatch model for the MOS transistor

    J.A. Croon;M. Rosmeulen;S. Decoutere;W. Sansen

  • Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

    Puneet Srivastava;Jo Das;Domenica Visalli;Joff Derluyn

  • Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

    Silvia Lenci;Brice De Jaeger;Laureen Carbonell;Jie Hu

  • 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

    Xiangdong Li;Marleen Van Hove;Ming Zhao;Karen Geens

  • Reliability and parasitic issues in GaN-based power HEMTs: a review

    Gaudenzio Meneghesso;Matteo Meneghini;Isabella Rossetto;Davide Bisi

  • High Q inductor add-on module in thick Cu/SiLK/sup TM/ single damascene

    S. Jenei;S. Decoutere;G. Winderickx;H. Struyf

  • Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

    Puneet Srivastava;Jo Das;Domenica Visalli;Marleen Van Hove

  • Line edge roughness: characterization, modeling and impact on device behavior

    J.A. Croon;G. Storms;S. Winkelmeier;I. Pollentier

  • AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

    Kai Cheng;Hu Liang;Marleen Van Hove;Karen Geens

  • Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Maria Ruzzarin

  • Kinetics of Buffer-Related R ON -Increase in GaN-on-Silicon MIS-HEMTs

    Davide Bisi;Matteo Meneghini;Fabio Alessio Marino;Denis Marcon

  • Low-power 5 GHz LNA and VCO in 90 nm RF CMOS

    D. Linten;L. Aspemyr;W. Jeamsaksiri;J. Ramos

  • Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

    D. Marcon;J. Viaene;P. Favia;H. Bender

Frequent Co-Authors

Steve Stoffels
Steve Stoffels Aluvia Photonics
Matteo Meneghini
Matteo Meneghini University of Padua
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Piet Wambacq
Piet Wambacq Vrije Universiteit Brussel
Willy Sansen
Willy Sansen KU Leuven

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