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Stefaan Decoutere

Stefaan Decoutere

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
11710
World Ranking
1888
National Ranking
43

Materials Science

D-Index
57
Citations
11172
World Ranking
7988
National Ranking
92

Overview

Stefaan Decoutere is affiliated with Imec in Belgium and has a significant research output primarily in the fields of Engineering and Physics and Astronomy. Their work focuses extensively on Electrical and Electronic Engineering as well as Condensed Matter Physics, with a notable emphasis on Semiconductor materials and devices.

The main topics of their research include GaN-based semiconductor devices and materials, which constitute the largest share of their publications. Additional areas of focus encompass Silicon Carbide Semiconductor Technologies, Ga2O3 and related materials, Semiconductor Quantum Structures and Devices, Advancements in Semiconductor Devices and Circuit Design, and Semiconductor materials and interfaces.

Decoutere has contributed a range of recent papers centered on the behavior and characteristics of p-GaN Gate HEMTs. Notable publications include:

  • Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization, 2020, IEEE Electron Device Letters
  • Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics, 2020, IEEE Transactions on Power Electronics
  • Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs, 2022, IEEE Transactions on Electron Devices
  • High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs, 2021, IEEE Transactions on Electron Devices
  • TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs, 2021, IEEE Transactions on Electron Devices

The scholar's research has been published frequently in several venues, with multiple papers appearing in IEEE Transactions on Electron Devices, Microelectronics Reliability, and IEEE Electron Device Letters. Additional publication venues include Applied Physics Letters and Solid-State Electronics.

Stefaan Decoutere collaborates regularly with a group of co-authors, including Benoit Bakeroot, Matteo Borga, Karen Geens, Niels Posthuma, and Shuzhen You, with whom they have sustained multiple joint publications.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • A 0.16pJ/Conversion-Step 2.5mW 1.25GS/s 4b ADC in a 90nm Digital CMOS Process

    G. Van der Plas;S. Decoutere;S. Donnay

  • Transient enhanced diffusion of Boron in Si

    Suresh Jain;Wim Schoenmaker;Richard Lindsay;Peter Stolk

  • CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

    M. Van Hove;S. Boulay;S. R. Bahl;S. Stoffels

  • Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

    Tian-Li Wu;Denis Marcon;Shuzhen You;Niels Posthuma

  • A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS

    D. Linten;S. Thijs;M.I. Natarajan;P. Wambacq

  • Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors

    S. Jenei;B.K.J.C. Nauwelaers;S. Decoutere

  • An easy-to-use mismatch model for the MOS transistor

    J.A. Croon;M. Rosmeulen;S. Decoutere;W. Sansen

  • Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

    Puneet Srivastava;Jo Das;Domenica Visalli;Joff Derluyn

  • Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

    Silvia Lenci;Brice De Jaeger;Laureen Carbonell;Jie Hu

  • 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

    Xiangdong Li;Marleen Van Hove;Ming Zhao;Karen Geens

  • Reliability and parasitic issues in GaN-based power HEMTs: a review

    Gaudenzio Meneghesso;Matteo Meneghini;Isabella Rossetto;Davide Bisi

  • High Q inductor add-on module in thick Cu/SiLK/sup TM/ single damascene

    S. Jenei;S. Decoutere;G. Winderickx;H. Struyf

  • Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

    Puneet Srivastava;Jo Das;Domenica Visalli;Marleen Van Hove

  • Line edge roughness: characterization, modeling and impact on device behavior

    J.A. Croon;G. Storms;S. Winkelmeier;I. Pollentier

  • AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

    Kai Cheng;Hu Liang;Marleen Van Hove;Karen Geens

  • Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Maria Ruzzarin

  • Kinetics of Buffer-Related R ON -Increase in GaN-on-Silicon MIS-HEMTs

    Davide Bisi;Matteo Meneghini;Fabio Alessio Marino;Denis Marcon

  • Low-power 5 GHz LNA and VCO in 90 nm RF CMOS

    D. Linten;L. Aspemyr;W. Jeamsaksiri;J. Ramos

  • Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

    D. Marcon;J. Viaene;P. Favia;H. Bender

Frequent Co-Authors

Steve Stoffels
Steve Stoffels Aluvia Photonics
Matteo Meneghini
Matteo Meneghini University of Padua
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Piet Wambacq
Piet Wambacq Vrije Universiteit Brussel
Willy Sansen
Willy Sansen KU Leuven

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