Brice De Jaeger

Brice De Jaeger publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Brice De Jaeger sits on this spectrum.

Brice De Jaeger D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Brice De Jaeger sits on this spectrum.

Best Publications

• On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

  K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  459
  Citations

• Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

  D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  348
  Citations

• Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium

  A. Satta;E. Simoen;T. Clarysse;T. Janssens

  184
  Citations

• Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

  Silvia Lenci;Brice De Jaeger;Laureen Carbonell;Jie Hu

  170
  Citations

• Ion-implantation issues in the formation of shallow junctions in germanium

  Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens

  155
  Citations

• High Q inductor add-on module in thick Cu/SiLK/sup TM/ single damascene

  S. Jenei;S. Decoutere;G. Winderickx;H. Struyf

  148
  Citations

• High performance Ge pMOS devices using a Si-compatible process flow

  P. Zimmerman;G. Nicholas;B. De Jaeger;B. Kaczer

  146
  Citations

• AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

  Kai Cheng;Hu Liang;Marleen Van Hove;Karen Geens

  142
  Citations

• Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

  J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  141
  Citations

• Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

  B. De Jaeger;R. Bonzom;F. Leys;O. Richard

  140
  Citations

• Electrical TCAD Simulations of a Germanium pMOSFET Technology

  Geert Hellings;Geert Eneman;Raymond Krom;B De Jaeger

  129
  Citations

• High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

  G. Nicholas;B. De Jaeger;D.P. Brunco;P. Zimmerman

  123
  Citations

• Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

  B. De Jaeger;M. Van Hove;D. Wellekens;X. Kang

  122
  Citations

• Deposition of HfO2 on germanium and the impact of surface pretreatments

  S. Van Elshocht;B. Brijs;M. Caymax;T. Conard

  114
  Citations

• Shallow Junction Ion Implantation in Ge and Associated Defect Control

  A. Satta;E. Simoen;T. Janssens;T. Clarysse

  104
  Citations

• Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$ n Junctions

  G. Eneman;M. Wiot;A. Brugere;O.S.I. Casain

  103
  Citations

• Challenges and opportunities in advanced Ge pMOSFETs

  E Simoen;J Mitard;Geert Hellings;Geert Eneman

  98
  Citations

• New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

  K. Martens;Brice De Jaeger;R. Bonzom;J. Van Steenbergen

  96
  Citations

• Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

  S. Van Elshocht;M. Caymax;T. Conard;S. De Gendt

  96
  Citations

• An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

  N. E. Posthuma;S. You;S. Stoffels;D. Wellekens

  89
  Citations