Brice De Jaeger

Best Publications

• On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

  K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  459
  Citations

• Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

  D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  348
  Citations

• Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium

  A. Satta;E. Simoen;T. Clarysse;T. Janssens

  184
  Citations

• Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

  Silvia Lenci;Brice De Jaeger;Laureen Carbonell;Jie Hu

  170
  Citations

• Ion-implantation issues in the formation of shallow junctions in germanium

  Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens

  155
  Citations

• High Q inductor add-on module in thick Cu/SiLK/sup TM/ single damascene

  S. Jenei;S. Decoutere;G. Winderickx;H. Struyf

  148
  Citations

• High performance Ge pMOS devices using a Si-compatible process flow

  P. Zimmerman;G. Nicholas;B. De Jaeger;B. Kaczer

  146
  Citations

• AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

  Kai Cheng;Hu Liang;Marleen Van Hove;Karen Geens

  142
  Citations

• Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

  J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  141
  Citations

• Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

  B. De Jaeger;R. Bonzom;F. Leys;O. Richard

  140
  Citations

• Electrical TCAD Simulations of a Germanium pMOSFET Technology

  Geert Hellings;Geert Eneman;Raymond Krom;B De Jaeger

  129
  Citations

• High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

  G. Nicholas;B. De Jaeger;D.P. Brunco;P. Zimmerman

  123
  Citations

• Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

  B. De Jaeger;M. Van Hove;D. Wellekens;X. Kang

  122
  Citations

• Deposition of HfO2 on germanium and the impact of surface pretreatments

  S. Van Elshocht;B. Brijs;M. Caymax;T. Conard

  114
  Citations

• Shallow Junction Ion Implantation in Ge and Associated Defect Control

  A. Satta;E. Simoen;T. Janssens;T. Clarysse

  104
  Citations

• Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$ n Junctions

  G. Eneman;M. Wiot;A. Brugere;O.S.I. Casain

  103
  Citations

• Challenges and opportunities in advanced Ge pMOSFETs

  E Simoen;J Mitard;Geert Hellings;Geert Eneman

  98
  Citations

• New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

  K. Martens;Brice De Jaeger;R. Bonzom;J. Van Steenbergen

  96
  Citations

• Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

  S. Van Elshocht;M. Caymax;T. Conard;S. De Gendt

  96
  Citations

• An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

  N. E. Posthuma;S. You;S. Stoffels;D. Wellekens

  89
  Citations