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Koen Martens

Koen Martens

D-Index & Metrics

Engineering and Technology

D-Index
32
Citations
3550
World Ranking
9603
National Ranking
110

Overview

Koen Martens is affiliated with Imec in Belgium and conducts research primarily in the fields of engineering and biochemistry, genetics, and molecular biology. Their work spans a variety of subfields, including biomedical engineering, molecular biology, electrical and electronic engineering, bioengineering, and electronic, optical, and magnetic materials.

Their research topics focus on advanced biosensing and bioanalysis techniques, nanopore and nanochannel transport studies, nanowire synthesis and applications, analytical chemistry and sensors, advancements in semiconductor devices and circuit design, semiconductor materials and devices, and quantum-dot cellular automata.

Martens has contributed papers to several notable publication venues, including IEEE Sensors Journal, ACS Sensors, PLoS ONE, Physical Review Materials, and the 2022 International Electron Devices Meeting (IEDM). Their publications include:

  • The Significance of Nonlinear Screening and the pH Interference Mechanism in Field-Effect Transistor Molecular Sensors, 2021, ACS Sensors
  • Electronic voltage control of magnetic anisotropy at room temperature in high-κ SrTiO3/Co/Pt trilayer, 2020, Physical Review Materials
  • Computational assessment of the feasibility of protonation-based protein sequencing, 2020, PLoS ONE
  • Size Independent Sensitivity to Biomolecular Surface Density Using Nanoscale CMOS Technology Transistors, 2020, IEEE Sensors Journal
  • Surface Charge Modulation and Reduction of Non-Linear Electrolytic Screening in FET-Based Biosensing, 2020, IEEE Sensors Journal

Frequent co-authors collaborating with Martens include Sybren Santermans, Pol Van Dorpe, Juliette Gevers, Liesbet Lagae, and Kherim Willems.

Best Publications

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

    K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  • Ion-implantation issues in the formation of shallow junctions in germanium

    Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens

  • Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

    Guy Brammertz;Koen Martens;Sonja Sioncke;Annelies Delabie

  • Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

    J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  • Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

    Geert Rampelberg;Marc Schaekers;Koen Martens;Qingge Xie

  • High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

    G. Nicholas;B. De Jaeger;D.P. Brunco;P. Zimmerman

  • Capacitance-voltage characterization of GaAs–Al2O3 interfaces

    G. Brammertz;H.-C. Lin;K. Martens;D. Mercier

  • New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

    K. Martens;Brice De Jaeger;R. Bonzom;J. Van Steenbergen

  • Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control

    Anthony P Peter;Koen Martens;Geert Rampelberg;Michael Toeller

  • Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

    G Brammertz;H. C Lin;K Martens;D Mercier

  • Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics

    K. Martens;W. Wang;K. De Keersmaecker;G. Borghs

  • Electrical properties of III-V/oxide interfaces

    Guy Brammertz;H.C Lin;Koen Martens;Ali Reza Alian

  • The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

    H. C. Lin;Guy Brammertz;Koen Martens;Guilhem de Valicourt

  • Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction

    Hao Yu;Marc Schaekers;Tom Schram;Erik Rosseel

  • In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

    Geert Rampelberg;Bob De Schutter;Wouter Devulder;Koen Martens

  • Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

    D. Lin;G. Brammertz;S. Sioncke;C. Fleischmann

  • Interface control of high-k gate dielectrics on Ge

    M. Caymax;M. Houssa;G. Pourtois;F. Bellenger

  • The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs

    Matty R. Caymax;Frederik Leys;Jerome Mitard;Koen Martens

  • Atomic layer deposition of vanadium oxides: process and application review

    V. P. Prasadam;N. Bahlawane;Felix Mattelaer;Geert Rampelberg

  • Switching mechanism in two-terminal vanadium dioxide devices

    Iuliana P Radu;B Govoreanu;S Mertens;X Shi

  • Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium

    D.P. Brunco;A. Dimoulas;N. Boukos;Michel Houssa

Frequent Co-Authors

Marc Meuris
Marc Meuris Hasselt University
Iuliana Radu
Iuliana Radu Taiwan Semiconductor Manufacturing Company (Taiwan)
M.M. Heyns
M.M. Heyns KU Leuven
Michel Houssa
Michel Houssa KU Leuven

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