World's Best Scientists 2026 revealed!
Koen Martens

Koen Martens

D-Index & Metrics

Engineering and Technology

D-Index
32
Citations
3550
World Ranking
9606
National Ranking
110

Koen Martens publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Koen Martens sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 147 publications — 25th percentile

25% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Koen Martens D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Koen Martens sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 32 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Koen Martens is affiliated with Imec in Belgium and conducts research primarily in the fields of engineering and biochemistry, genetics, and molecular biology. Their work spans a variety of subfields, including biomedical engineering, molecular biology, electrical and electronic engineering, bioengineering, and electronic, optical, and magnetic materials.

Their research topics focus on advanced biosensing and bioanalysis techniques, nanopore and nanochannel transport studies, nanowire synthesis and applications, analytical chemistry and sensors, advancements in semiconductor devices and circuit design, semiconductor materials and devices, and quantum-dot cellular automata.

Martens has contributed papers to several notable publication venues, including IEEE Sensors Journal, ACS Sensors, PLoS ONE, Physical Review Materials, and the 2022 International Electron Devices Meeting (IEDM). Their publications include:

  • The Significance of Nonlinear Screening and the pH Interference Mechanism in Field-Effect Transistor Molecular Sensors, 2021, ACS Sensors
  • Electronic voltage control of magnetic anisotropy at room temperature in high-κ SrTiO3/Co/Pt trilayer, 2020, Physical Review Materials
  • Computational assessment of the feasibility of protonation-based protein sequencing, 2020, PLoS ONE
  • Size Independent Sensitivity to Biomolecular Surface Density Using Nanoscale CMOS Technology Transistors, 2020, IEEE Sensors Journal
  • Surface Charge Modulation and Reduction of Non-Linear Electrolytic Screening in FET-Based Biosensing, 2020, IEEE Sensors Journal

Frequent co-authors collaborating with Martens include Sybren Santermans, Pol Van Dorpe, Juliette Gevers, Liesbet Lagae, and Kherim Willems.

Best Publications

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

    K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  • Ion-implantation issues in the formation of shallow junctions in germanium

    Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens

  • Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

    Guy Brammertz;Koen Martens;Sonja Sioncke;Annelies Delabie

  • Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

    J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  • Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

    Geert Rampelberg;Marc Schaekers;Koen Martens;Qingge Xie

  • High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

    G. Nicholas;B. De Jaeger;D.P. Brunco;P. Zimmerman

  • Capacitance-voltage characterization of GaAs–Al2O3 interfaces

    G. Brammertz;H.-C. Lin;K. Martens;D. Mercier

  • New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

    K. Martens;Brice De Jaeger;R. Bonzom;J. Van Steenbergen

  • Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control

    Anthony P Peter;Koen Martens;Geert Rampelberg;Michael Toeller

  • Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

    G Brammertz;H. C Lin;K Martens;D Mercier

  • Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics

    K. Martens;W. Wang;K. De Keersmaecker;G. Borghs

  • Electrical properties of III-V/oxide interfaces

    Guy Brammertz;H.C Lin;Koen Martens;Ali Reza Alian

  • The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

    H. C. Lin;Guy Brammertz;Koen Martens;Guilhem de Valicourt

  • Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction

    Hao Yu;Marc Schaekers;Tom Schram;Erik Rosseel

  • In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

    Geert Rampelberg;Bob De Schutter;Wouter Devulder;Koen Martens

  • Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

    D. Lin;G. Brammertz;S. Sioncke;C. Fleischmann

  • Interface control of high-k gate dielectrics on Ge

    M. Caymax;M. Houssa;G. Pourtois;F. Bellenger

  • The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs

    Matty R. Caymax;Frederik Leys;Jerome Mitard;Koen Martens

  • Atomic layer deposition of vanadium oxides: process and application review

    V. P. Prasadam;N. Bahlawane;Felix Mattelaer;Geert Rampelberg

  • Switching mechanism in two-terminal vanadium dioxide devices

    Iuliana P Radu;B Govoreanu;S Mertens;X Shi

  • Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium

    D.P. Brunco;A. Dimoulas;N. Boukos;Michel Houssa

Frequent Co-Authors

Marc Meuris
Marc Meuris Hasselt University
Iuliana Radu
Iuliana Radu Taiwan Semiconductor Manufacturing Company (Taiwan)
M.M. Heyns
M.M. Heyns KU Leuven
Michel Houssa
Michel Houssa KU Leuven

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