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Christophe Detavernier

Christophe Detavernier

D-Index & Metrics

Materials Science

D-Index
72
Citations
19421
World Ranking
4031
National Ranking
40

Overview

Christophe Detavernier is affiliated with Ghent University in Belgium and has an extensive publication record in the fields of Engineering and Materials Science. Their research focuses primarily on subfields such as Electrical and Electronic Engineering, Materials Chemistry, and Catalysis, with notable contributions to Atomic and Molecular Physics, and Biomedical Engineering.

The scientist has published extensively on topics related to semiconductor materials and devices, catalytic processes in materials science, and the electronic and structural properties of oxides. Other prominent research areas include advancements in battery materials, catalysis and oxidation reactions, semiconductor materials and interfaces, and quantum dots synthesis and properties.

Frequent coauthors collaborating with Christophe Detavernier include Jolien Dendooven, Matthias Minjauw, Lowie Henderick, Hilde Poelman, and Eduardo Solano.

Notable publication venues where Detavernier's work appears include:

  • ECS Meeting Abstracts
  • Chemistry of Materials
  • Dalton Transactions
  • The Journal of Physical Chemistry C
  • SSRN Electronic Journal

Key recent papers authored or co-authored by Christophe Detavernier include:

  • Plasmonic gold-embedded TiO2 thin films as photocatalytic self-cleaning coatings, 2020, Applied Catalysis B: Environmental
  • Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection, 2022, Advanced Science
  • Ovonic Threshold-Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles, 2020, physica status solidi (RRL) - Rapid Research Letters
  • Effect of Rh in Ni-based catalysts on sulfur impurities during methane reforming, 2020, Applied Catalysis B: Environmental
  • Acid-Base Mediated Ligand Exchange on Near-Infrared Absorbing, Indium-Based III-V Colloidal Quantum Dots, 2021, Journal of the American Chemical Society

Best Publications

  • Super-dry reforming of methane intensifies CO2 utilization via Le Chatelier’s principle

    Lukas C. Buelens;Vladimir V. Galvita;Hilde Poelman;Christophe Detavernier

  • Towards implementation of a nickel silicide process for CMOS technologies

    C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral

  • Tailoring nanoporous materials by atomic layer deposition.

    Christophe Detavernier;Jolien Dendooven;Sreeprasanth Pulinthanathu Sree;Karl F. Ludwig

  • Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

    Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

    Qi Xie;Yu-Long Jiang;Christophe Detavernier;Davy Deduytsche

  • Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

    Shiyang Zhu;R.L. Van Meirhaeghe;C. Detavernier;F. Cardon

  • Thin film reaction of transition metals with germanium

    S Gaudet;Christophe Detavernier;Aj Kellock;P Desjardins

  • An off-normal fibre-like texture in thin films on single-crystal substrates

    Christophe Detavernier;Christophe Detavernier;As Ozcan;J Jordan-Sweet;Ea Stach

  • Plasma-Enhanced ALD of Platinum with O2, N2 and NH3 Plasmas

    D. Longrie;K. Devloo-Casier;D. Deduytsche;S. Van den Berghe

  • Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors

    Qi Xie;Shaoren Deng;Marc Schaekers;Dennis Lin

  • Atomic layer deposition of titanium nitride from TDMAT precursor

    J. Musschoot;Q. Xie;D. Deduytsche;S. Van den Berghe

  • CeO2-modified Fe2O3 for CO2 utilization via chemical looping

    Vladimir V. Galvita;Hilde Poelman;Vitaliy Bliznuk;Christophe Detavernier

  • In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

    W. Knaepen;C. Detavernier;R.L. Van Meirhaeghe;J. Jordan Sweet

  • Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition

    Qi Xie;Jan Musschoot;Davy Deduytsche;Roland L. Van Meirhaeghe

  • High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation

    D. Deduytsche;C. Detavernier;R. L. Van Meirhaeghe;C. Lavoie

  • Te-based chalcogenide materials for selector applications.

    A Velea;K Opsomer;Wouter Devulder;Jan Dumortier

  • Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films

    C. Lavoie;C. Detavernier;C. Cabral;F. M. d'Heurle

  • Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

    F. Iacopi;Philippe Vereecken;M. Schaekers;M. Caymax

  • Plasma enhanced atomic layer deposition of Ga2O3 thin films

    Ranjith Karuparambil Ramachandran;Jolien Dendooven;Jonas Botterman;Sreeprasanth Pulinthanathu Sree

  • Delivering a Modifying Element to Metal Nanoparticles via Support: Pt–Ga Alloying during the Reduction of Pt/Mg(Al,Ga)Ox Catalysts and Its Effects on Propane Dehydrogenation

    Evgeniy A. Redekop;Vladimir V. Galvita;Hilde Poelman;Vitaliy Bliznuk

Frequent Co-Authors

Christian Lavoie
Christian Lavoie IBM (United States)
Hilde Poelman
Hilde Poelman Ghent University
Vladimir Galvita
Vladimir Galvita Ghent University
Zeger Hens
Zeger Hens Ghent University
Karen Maex
Karen Maex University of Amsterdam
Sara Bals
Sara Bals University of Antwerp

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