World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
73
Citations
20087
World Ranking
764
National Ranking
21

Materials Science

D-Index
73
Citations
21066
World Ranking
3813
National Ranking
87

Overview

Yee-Chia Yeo is affiliated with the National University of Singapore in Singapore. Their research primarily involves engineering, with a focus on electrical and electronic engineering. The work spans several subfields including atomic and molecular physics and optics, electronic, optical and magnetic materials, modeling and simulation, and control and systems engineering.

The scientist's main research topics include semiconductor materials and devices, silicon carbide semiconductor technologies, advancements in semiconductor devices and circuit design, semiconductor materials and interfaces, copper interconnects and reliability, integrated circuits and semiconductor failure analysis, and mathematical biology related to tumor growth.

Selected recent papers authored or co-authored by Yee-Chia Yeo include:

  • Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond, 2022, 2022 International Electron Devices Meeting (IEDM)
  • A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part I: Theoretical Design and Simulation Study, 2020, IEEE Transactions on Electron Devices
  • A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification, 2020, IEEE Transactions on Electron Devices
  • On the Analytical Properties of a Nonlinear Microscopic Dynamical Model for Connected and Automated Vehicles, 2024, arXiv (Cornell University)
  • (Invited) Silicon Carbide Technology Scaling: Challenges and Opportunities across the Value Chain, 2024, ECS Meeting Abstracts

Frequent co-authors in their publications include:

  • Umesh Chand
  • L. K. Bera
  • Surasit Chung
  • Navab Singh
  • Xuan Sang Nguyen

Yee-Chia Yeo has contributed frequently to several publication venues, including:

  • IEEE Transactions on Electron Devices
  • Diffusion and Defect Data, Solid State Data. Part B, Solid State Phenomena/Solid State Phenomena
  • Key Engineering Materials
  • Materials Science Forum
  • 2022 International Electron Devices Meeting (IEDM)

Best Publications

  • Breaking the Speed Limits of Phase-Change Memory

    D. Loke;D. Loke;D. Loke;T. H. Lee;W. J. Wang;L. P. Shi

  • Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

    Yee Chia Yeo;Tsu Jae King;Chen-Ming Hu

  • Immersion Fluid for Immersion Lithography, and Method of Performing Immersion Lithography

    Yee-Chia Yeo;Burn-Jeng Lin;Chenming Hu

  • Lithography apparatus for manufacture of integrated circuits

    Yee-Chia Yeo;Chenming Hu

  • 5nm-gate nanowire FinFET

    Fu-Liang Yang;Di-Hong Lee;Hou-Yu Chen;Chang-Yun Chang

  • Electronic band structures and effective-mass parameters of wurtzite GaN and InN

    Y. C. Yeo;T. C. Chong;M. F. Li

  • 25 nm CMOS Omega FETs

    Fu-Liang Yang;Hao-Yu Chen;Fang-Cheng Chen;Cheng-Chuan Huang

  • MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations

    Yee-Chia Yeo;Tsu-Jae King;Chenming Hu

  • Electronic band structure and effective mass parameters of Ge1-xSnx alloys

    Kain Lu Low;Yue Yang;Genquan Han;Weijun Fan

  • Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit

    Chih-Hsin Ko;Wen-Chin Lee;Yee-Chia Yeo;Chun-Chieh Lin

  • Direct tunneling leakage current and scalability of alternative gate dielectrics

    Yee Chia Yeo;Tsu Jae King;Chen-Ming Hu

  • Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric

    Yee Chia Yeo;Qiang Lu;Wen Chin Lee;Wen Chin Lee;Tsu-Jae King

  • Tunneling Field-Effect Transistor: Capacitance Components and Modeling

    Yue Yang;Xin Tong;Li-Tao Yang;Peng-Fei Guo

  • Strained-channel transistor structure with lattice-mismatched zone and fabrication method thereof

    Yee-Chia Yeo;Chun-Chieh Lin;Wen-Chin Lee;Chenming Hu

  • Strained channel complementary field-effect transistors

    Chih-Hsin Ko;Yee-Chia Yeo;Wen-Chin Lee;Chenming Hu

  • Method for forming rod-shaped semiconductor layer, and rod-shaped semiconductor device and method of fabricating the same

    Chen Hao-Yu;Yeo Yee-Chia;Yang Fu-Liang;Hu Chen-Ming

  • Process-strained Si (PSS) CMOS technology featuring 3D strain engineering

    C.-H. Ge;C.-C. Lin;C.-H. Ko;C.-C. Huang

  • Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

    Eng-Huat Toh;Grace Huiqi Wang;Ganesh Samudra;Yee-Chia Yeo

  • Controlled insulator-to-metal transformation in printable polymer composites with nanometal clusters

    Sankaran Sivaramakrishnan;Perq-Jon Chia;Yee-Chia Yeo;Lay-Lay Chua

  • Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric

    C. Shen;M.-F. Li;C. E. Foo;T. Yang

Frequent Co-Authors

Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Xiao Gong
Xiao Gong National University of Singapore
Genquan Han
Genquan Han Xidian University
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Ming-Fu Li
Ming-Fu Li Fudan University
Gengchiau Liang
Gengchiau Liang National Yang Ming Chiao Tung University
Lap Chan
Lap Chan Independent Scientist / Consultant, Singapore
Kah-Wee Ang
Kah-Wee Ang National University of Singapore
Dongzhi Chi
Dongzhi Chi Agency for Science, Technology and Research
Jisheng Pan
Jisheng Pan Agency for Science, Technology and Research

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