World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
73
Citations
20087
World Ranking
764
National Ranking
20

Materials Science

D-Index
73
Citations
21066
World Ranking
3811
National Ranking
86

Yee-Chia Yeo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yee-Chia Yeo sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 686 publications — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yee-Chia Yeo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yee-Chia Yeo sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 73 D-Index — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yee-Chia Yeo is affiliated with the National University of Singapore in Singapore. Their research primarily involves engineering, with a focus on electrical and electronic engineering. The work spans several subfields including atomic and molecular physics and optics, electronic, optical and magnetic materials, modeling and simulation, and control and systems engineering.

The scientist's main research topics include semiconductor materials and devices, silicon carbide semiconductor technologies, advancements in semiconductor devices and circuit design, semiconductor materials and interfaces, copper interconnects and reliability, integrated circuits and semiconductor failure analysis, and mathematical biology related to tumor growth.

Selected recent papers authored or co-authored by Yee-Chia Yeo include:

  • Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond, 2022, 2022 International Electron Devices Meeting (IEDM)
  • A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part I: Theoretical Design and Simulation Study, 2020, IEEE Transactions on Electron Devices
  • A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification, 2020, IEEE Transactions on Electron Devices
  • On the Analytical Properties of a Nonlinear Microscopic Dynamical Model for Connected and Automated Vehicles, 2024, arXiv (Cornell University)
  • (Invited) Silicon Carbide Technology Scaling: Challenges and Opportunities across the Value Chain, 2024, ECS Meeting Abstracts

Frequent co-authors in their publications include:

  • Umesh Chand
  • L. K. Bera
  • Surasit Chung
  • Navab Singh
  • Xuan Sang Nguyen

Yee-Chia Yeo has contributed frequently to several publication venues, including:

  • IEEE Transactions on Electron Devices
  • Diffusion and Defect Data, Solid State Data. Part B, Solid State Phenomena/Solid State Phenomena
  • Key Engineering Materials
  • Materials Science Forum
  • 2022 International Electron Devices Meeting (IEDM)

Best Publications

  • Breaking the Speed Limits of Phase-Change Memory

    D. Loke;D. Loke;D. Loke;T. H. Lee;W. J. Wang;L. P. Shi

  • Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

    Yee Chia Yeo;Tsu Jae King;Chen-Ming Hu

  • Immersion Fluid for Immersion Lithography, and Method of Performing Immersion Lithography

    Yee-Chia Yeo;Burn-Jeng Lin;Chenming Hu

  • Lithography apparatus for manufacture of integrated circuits

    Yee-Chia Yeo;Chenming Hu

  • 5nm-gate nanowire FinFET

    Fu-Liang Yang;Di-Hong Lee;Hou-Yu Chen;Chang-Yun Chang

  • Electronic band structures and effective-mass parameters of wurtzite GaN and InN

    Y. C. Yeo;T. C. Chong;M. F. Li

  • 25 nm CMOS Omega FETs

    Fu-Liang Yang;Hao-Yu Chen;Fang-Cheng Chen;Cheng-Chuan Huang

  • MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations

    Yee-Chia Yeo;Tsu-Jae King;Chenming Hu

  • Electronic band structure and effective mass parameters of Ge1-xSnx alloys

    Kain Lu Low;Yue Yang;Genquan Han;Weijun Fan

  • Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit

    Chih-Hsin Ko;Wen-Chin Lee;Yee-Chia Yeo;Chun-Chieh Lin

  • Direct tunneling leakage current and scalability of alternative gate dielectrics

    Yee Chia Yeo;Tsu Jae King;Chen-Ming Hu

  • Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric

    Yee Chia Yeo;Qiang Lu;Wen Chin Lee;Wen Chin Lee;Tsu-Jae King

  • Tunneling Field-Effect Transistor: Capacitance Components and Modeling

    Yue Yang;Xin Tong;Li-Tao Yang;Peng-Fei Guo

  • Strained-channel transistor structure with lattice-mismatched zone and fabrication method thereof

    Yee-Chia Yeo;Chun-Chieh Lin;Wen-Chin Lee;Chenming Hu

  • Strained channel complementary field-effect transistors

    Chih-Hsin Ko;Yee-Chia Yeo;Wen-Chin Lee;Chenming Hu

  • Method for forming rod-shaped semiconductor layer, and rod-shaped semiconductor device and method of fabricating the same

    Chen Hao-Yu;Yeo Yee-Chia;Yang Fu-Liang;Hu Chen-Ming

  • Process-strained Si (PSS) CMOS technology featuring 3D strain engineering

    C.-H. Ge;C.-C. Lin;C.-H. Ko;C.-C. Huang

  • Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

    Eng-Huat Toh;Grace Huiqi Wang;Ganesh Samudra;Yee-Chia Yeo

  • Controlled insulator-to-metal transformation in printable polymer composites with nanometal clusters

    Sankaran Sivaramakrishnan;Perq-Jon Chia;Yee-Chia Yeo;Lay-Lay Chua

  • Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric

    C. Shen;M.-F. Li;C. E. Foo;T. Yang

Frequent Co-Authors

Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Xiao Gong
Xiao Gong National University of Singapore
Genquan Han
Genquan Han Xidian University
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Ming-Fu Li
Ming-Fu Li Fudan University
Gengchiau Liang
Gengchiau Liang National Yang Ming Chiao Tung University
Lap Chan
Lap Chan Independent Scientist / Consultant, Singapore
Kah-Wee Ang
Kah-Wee Ang National University of Singapore
Dongzhi Chi
Dongzhi Chi Agency for Science, Technology and Research
Jisheng Pan
Jisheng Pan Agency for Science, Technology and Research

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