World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
49
Citations
8168
World Ranking
10586
National Ranking
169

Jisheng Pan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jisheng Pan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 241 publications — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jisheng Pan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jisheng Pan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jisheng Pan is affiliated with the Agency for Science, Technology and Research in Singapore. Their research broadly spans the fields of engineering and materials science, with a significant focus on specialized subfields including materials chemistry, electrical and electronic engineering, aerospace engineering, mechanical engineering, and biomedical engineering. The distribution of their publications highlights a multi-disciplinary approach bridging core engineering principles with advanced materials development.

The scientist has contributed extensively to research areas such as high-temperature coating behaviors, 2D materials and their applications, particle dynamics in fluid flows, advanced materials and composites, advanced surface polishing techniques, perovskite materials and applications, and advanced ceramic materials synthesis. These topics represent the main themes explored throughout their body of work.

Key recent publications by Jisheng Pan include:

  • 2D Material Infrared Photonics and Plasmonics, 2023, ACS Nano
  • Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering, 2021, Applied Surface Science
  • Interlayer Excitons in Transition Metal Dichalcogenide Semiconductors for 2D Optoelectronics, 2021, Advanced Materials
  • Fatigue life enhancement in alpha/beta Ti-6Al-4V after shot peening: An EBSD and TEM crystallographic orientation mapping study of surface layer, 2020, Materialia
  • Cold spray deposition of Inconel 718 in comparison with atmospheric plasma spray deposition, 2020, Applied Surface Science

Jisheng Pan frequently publishes in the following venues:

  • Surface and Interface Analysis
  • SSRN Electronic Journal
  • Materials Advances
  • Applied Surface Science
  • Advanced Materials

The scientist has collaborated often with several coauthors, including Zheng Zhang, Debbie Hwee Leng Seng, Zhiqian Zhang, Zoe Mills, and Usa Castner. These frequent collaborations have contributed to the interdisciplinary nature of their research outputs.

Best Publications

  • Synthesis of Fe nanoparticles@graphene composites for environmental applications.

    Juan Guo;Ruiyu Wang;Weng Weei Tjiu;Jisheng Pan

  • Growth of wafer-scale MoS2 monolayer by magnetron sputtering

    Junguang Tao;Jianwei Chai;Xin Lu;Lai Mun Wong

  • Hybridization of graphene sheets and carbon-coated Fe3O4 nanoparticles as a synergistic adsorbent of organic dyes

    Wei Fan;Wei Gao;Chao Zhang;Weng Weei Tjiu

  • One-step synthesis of graphene nanoribbon–MnO2 hybrids and their all-solid-state asymmetric supercapacitors

    Mingkai Liu;Weng Weei Tjiu;Jisheng Pan;Chao Zhang

  • Nitrogen-doped graphene nanoribbons as efficient metal-free electrocatalysts for oxygen reduction.

    Mingkai Liu;Yanfang Song;Sixin He;Weng Weei Tjiu

  • Magnetic nanomaterial derived from graphene oxide/layered double hydroxide hybrid for efficient removal of methyl orange from aqueous solution.

    Zhe Yang;Shanshan Ji;Wei Gao;Chao Zhang

  • Exfoliated MoS2 nanosheets as efficient catalysts for electrochemical hydrogen evolution

    Shanshan Ji;Zhe Yang;Chao Zhang;Zhenyan Liu

  • Surface-Modified Nanotube Anodes for High Performance Organic Light-Emitting Diode

    Eric C-W. Ou;Liangbing Hu;Gan Ching Ruey Raymond;Ong Kian Soo

  • Enhancing antibacterial activity of chitosan surface by heterogeneous quaternization

    Napanporn Vallapa;Oraphan Wiarachai;Nuttha Thongchul;Jisheng Pan

  • 2D Material Infrared Photonics and Plasmonics.

    Unknown

  • Synthesis of few-layered MoS2 nanosheet-coated electrospun SnO2 nanotube heterostructures for enhanced hydrogen evolution reaction

    Yunpeng Huang;Yue-E Miao;Longsheng Zhang;Weng Weei Tjiu

  • Reaction of SiO2 with hafnium oxide in low oxygen pressure

    S. J. Wang;P. C. Lim;A. C. H. Huan;C. L. Liu

  • Synergism between Cu and Zn sites in Cu/Zn catalysts for methanol synthesis

    H.Y. Chen;S.P. Lau;L. Chen;J. Lin

  • Symmetrical negative differential resistance behavior of a resistive switching device

    Yuanmin Du;Hui Pan;Shijie Wang;Tom Wu

  • Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

    Xiao Gong;Genquan Han;Fan Bai;Shaojian Su

  • The coloration and degradation mechanisms of electrochromic nickel oxide

    Yi Ren;Yi Ren;Wai Kin Chim;Li Guo;Hendrix Tanoto

  • Density functional study on ferromagnetism in nitrogen-doped anatase TiO2

    J. G. Tao;L. X. Guan;J. S. Pan;C. H. A. Huan

  • Coordination-Resolved C−C Bond Length and the C 1s Binding Energy of Carbon Allotropes and the Effective Atomic Coordination of the Few-Layer Graphene

    Chang Q. Sun;Yi Sun;Y. G. Nie;Yan Wang

  • Surface passivation using ultrathin AlNx film for Ge–metal–oxide–semiconductor devices with hafnium oxide gate dielectric

    Fei Gao;S. J. Lee;J. S. Pan;L. J. Tang

  • Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

    Zhihua Yong;Karl-Magnus Persson;Mamidala Saketh Ram;Giulio D'Acunto

  • The stability of aluminium oxide monolayer and its interface with two-dimensional materials.

    Ting Ting Song;Ming Yang;Jian Wei Chai;Martin Callsen

  • Energy-band alignments at ZrO2∕Si, SiGe, and Ge interfaces

    S. J. Wang;A. C. H. Huan;Y. L. Foo;J. W. Chai

  • Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells

    L. M. Wong;S. Y. Chiam;J. Q. Huang;S. J. Wang

Frequent Co-Authors

Shijie Wang
Shijie Wang Agency for Science, Technology and Research
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Chang Q. Sun
Chang Q. Sun Nanyang Technological University
Yuan Ping Feng
Yuan Ping Feng National University of Singapore
Ming Yang
Ming Yang Hong Kong Polytechnic University
Tianxi Liu
Tianxi Liu Jiangnan University
Tow Chong Chong
Tow Chong Chong Singapore University of Technology and Design
Weng Weei Tjiu
Weng Weei Tjiu Agency for Science, Technology and Research
Xiao Gong
Xiao Gong National University of Singapore
Luping Shi
Luping Shi Tsinghua University

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