World's Best Scientists 2026 revealed!
M.M. Heyns

M.M. Heyns

Award Badge
Electronics and Electrical Engineering
Belgium
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
78
Citations
21379
World Ranking
587
National Ranking
11

Materials Science

D-Index
79
Citations
22221
World Ranking
2833
National Ranking
25

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Belgium Leader Award

Overview

M.M. Heyns is affiliated with KU Leuven in Belgium and is involved in research primarily within the field of Engineering. Their work focuses on Electrical and Electronic Engineering, contributing to the understanding and development of semiconductor technologies.

Their research topics emphasize key areas such as:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Integrated Circuits and Semiconductor Failure Analysis

A notable recent publication by M.M. Heyns is titled "Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies", published in 2020 in the Journal of Applied Physics. This paper addresses reliability issues in CMOS technology, specifically focusing on hafnium dioxide gate stacks, a material critical to modern semiconductor devices.

Frequent co-authors collaborating with M.M. Heyns include:

  • D. Claes
  • J. Franco
  • Nadine Collaert
  • D. Linten

The Journal of Applied Physics is the primary venue where they have published their work. Their contribution to this journal aligns with their expertise in semiconductor materials and device physics.

Best Publications

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

    K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  • Soft breakdown of ultra-thin gate oxide layers

    M. Depas;T. Nigam;M.M. Heyns

  • Trap-assisted tunneling in high permittivity gate dielectric stacks

    Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev

  • Bandgap opening in oxygen plasma-treated graphene.

    Amirhasan Nourbakhsh;Mirco Cantoro;Tom Vosch;Geoffrey Pourtois

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

    Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard

  • Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

    H. Nohira;W. Tsai;W. Besling;E. Young

  • Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

    Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

  • Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

    Michel Houssa;Valeri Afanas'ev;Andre Stesmans;MM Heyns

  • Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    Benjamin Vincent;Federica Gencarelli;Hugo Bender;Clement Merckling

  • Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

    Zhen Xu;Michel Houssa;Stefan De Gendt;Marc Heyns

  • Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

    F. Gencarelli;B. Vincent;J. Demeulemeester;A. Vantomme

  • Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

    A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt

  • Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

    Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard

  • The Etching Mechanisms of SiO2 in Hydrofluoric Acid

    S Verhaverbeke;I Teerlinck;Christiaan Vinckier;G Stevens

  • Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators

    Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

  • Fabrication and Analysis of a ${ m Si}/{ m Si}_{0.55}{ m Ge}_{0.45}$ Heterojunction Line Tunnel FET

    Amey M. Walke;Anne Vandooren;Rita Rooyackers;Daniele Leonelli

  • Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

    R. J. Carter;E. Cartier;A. Kerber;L. Pantisano

  • Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy

    M.P. Murrell;M.E. Welland;S.J. Oshea;T.M.H. Wong

  • Modeling Soft Breakdown of Ultra-Thin Gate Oxide Layers

    Michel Houssa;Paul Mertens;Marc Heyns

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in Electronics and Electrical Engineering, exploring best online colleges with weekly start dates offers flexibility to begin studies without long waiting periods. This feature is ideal for students balancing work or other commitments.

If you're looking to quickly boost your qualifications, consider short certificate programs that pay well. These accelerated options provide targeted skills in a compressed timeframe, opening doors to higher-paying roles in tech and engineering fields.

For individuals who prefer solo or focused work environments, some of the good jobs for introverts align well with the technical nature of electrical engineering careers. Roles such as circuit design or systems analysis often require independent problem-solving.

Additionally, professionals aiming to lead engineering teams or projects may find value in pursuing an accelerated project management degree. This qualification hones skills in planning and execution, enhancing career advancement opportunities within engineering sectors.

Best Scientists Citing M.M. Heyns

Trending Scientists