What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Oxygen
- Organic chemistry
His scientific interests lie mostly in Optoelectronics, MOSFET, Dielectric, Gate dielectric and Germanium.
His Optoelectronics study combines topics from a wide range of disciplines, such as Annealing, Oxide, Electronic engineering and Passivation.
He has researched MOSFET in several fields, including Electron mobility, CMOS, Doping and Leakage.
His studies deal with areas such as Amorphous solid, Thin film and Condensed matter physics, Density of states as well as Dielectric.
The study incorporates disciplines such as Substrate and Analytical chemistry in addition to Thin film.
His work deals with themes such as Dissociation, Gate oxide and Permittivity, which intersect with Gate dielectric.
His most cited work include:
- Trap-assisted tunneling in high permittivity gate dielectric stacks (302 citations)
- Soft breakdown of ultra-thin gate oxide layers (292 citations)
- Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions (216 citations)
What are the main themes of his work throughout his whole career to date?
Optoelectronics, Analytical chemistry, Dielectric, Silicon and MOSFET are his primary areas of study.
His studies deal with areas such as Gate dielectric, Passivation and Electrical engineering as well as Optoelectronics.
While the research belongs to areas of Analytical chemistry, M.M. Heyns spends his time largely on the problem of Oxide, intersecting his research to questions surrounding Layer.
His studies in Dielectric integrate themes in fields like Annealing and Condensed matter physics.
His Silicon research includes elements of Inorganic chemistry and Wafer.
His MOSFET research is multidisciplinary, incorporating elements of Field-effect transistor, Metal gate, Electronic engineering and Germanium.
He most often published in these fields:
- Optoelectronics (46.60%)
- Analytical chemistry (24.38%)
- Dielectric (20.99%)
What were the highlights of his more recent work (between 2010-2021)?
- Optoelectronics (46.60%)
- Condensed matter physics (14.81%)
- Silicon (20.37%)
In recent papers he was focusing on the following fields of study:
M.M. Heyns mainly focuses on Optoelectronics, Condensed matter physics, Silicon, Quantum tunnelling and Nanotechnology.
His Optoelectronics research integrates issues from Gate dielectric, Passivation, Logic gate and Voltage.
M.M. Heyns interconnects Molecular physics, Wafer and Analytical chemistry in the investigation of issues within Silicon.
His study looks at the relationship between Quantum tunnelling and topics such as Doping, which overlap with Fermi level, Annealing and Indium gallium arsenide.
His study in Nanotechnology is interdisciplinary in nature, drawing from both Metal–insulator transition, Semiconductor and Capacitor.
The concepts of his Electron mobility study are interwoven with issues in Electronic engineering and Electrical engineering.
Between 2010 and 2021, his most popular works were:
- An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates (70 citations)
- Advancing CMOS beyond the Si roadmap with Ge and III/V devices (55 citations)
- Drive current enhancement in p-tunnel FETs by optimization of the process conditions (45 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Oxygen
- Organic chemistry
The scientist’s investigation covers issues in Optoelectronics, Nanotechnology, Transmission electron microscopy, Silicon and Doping.
His Optoelectronics study combines topics from a wide range of disciplines, such as Thin film, Molecular beam epitaxy and Passivation.
His research in Passivation intersects with topics in Oxide, Deposition, Indium and Gate oxide.
His Silicon research incorporates themes from Scattering, Annealing, Ballistic conduction, MOSFET and Electronic engineering.
His MOSFET research includes themes of Quantum well, Phonon, CMOS and Leakage.
His Electronic engineering study integrates concerns from other disciplines, such as PMOS logic, Electron mobility and Germanium.
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