D-Index & Metrics Best Publications
Andre Stesmans

Andre Stesmans

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 69 Citations 17,760 629 World Ranking 2627 National Ranking 25

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Condensed matter physics

Andre Stesmans mainly focuses on Condensed matter physics, Oxide, Silicon, Electron paramagnetic resonance and Analytical chemistry. He combines subjects such as Density functional theory and Germanene, Silicene with his study of Condensed matter physics. His Oxide study which covers Optoelectronics that intersects with Thermal conduction.

As a part of the same scientific family, Andre Stesmans mostly works in the field of Silicon, focusing on Passivation and, on occasion, Amorphous silicon, Dissociation and Crystallographic defect. His research integrates issues of Annealing, Thermal, Hyperfine structure and Dangling bond in his study of Electron paramagnetic resonance. His studies in Analytical chemistry integrate themes in fields like Ellipsometry, Thin film, Chemical vapor deposition and Work function.

His most cited work include:

  • Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 (449 citations)
  • Classification and control of the origin of photoluminescence from Si nanocrystals (426 citations)
  • Electronic properties of hydrogenated silicene and germanene (329 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Electron paramagnetic resonance, Condensed matter physics, Silicon, Analytical chemistry and Oxide. His Electron paramagnetic resonance study combines topics from a wide range of disciplines, such as Annealing, Crystallographic defect, Paramagnetism and Dangling bond. The various areas that he examines in his Annealing study include Chemical physics and Dielectric.

In his research, Insulator is intimately related to Semiconductor, which falls under the overarching field of Condensed matter physics. His Silicon study is concerned with Optoelectronics in general. His research in Oxide intersects with topics in Molecular physics, Metal, Atomic physics and Mineralogy.

He most often published in these fields:

  • Electron paramagnetic resonance (36.05%)
  • Condensed matter physics (29.41%)
  • Silicon (25.34%)

What were the highlights of his more recent work (between 2012-2021)?

  • Condensed matter physics (29.41%)
  • Electron paramagnetic resonance (36.05%)
  • Optoelectronics (18.85%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Condensed matter physics, Electron paramagnetic resonance, Optoelectronics, Oxide and Dangling bond. Band gap is the focus of his Condensed matter physics research. His work carried out in the field of Electron paramagnetic resonance brings together such families of science as Thermal, Crystallography, Crystallographic defect, Hyperfine structure and Paramagnetism.

Andre Stesmans combines subjects such as Analytical chemistry, Annealing, Work function, Atomic physics and Atomic layer deposition with his study of Oxide. His Dangling bond study is related to the wider topic of Silicon. His Silicon research is multidisciplinary, relying on both FOIL method and Layer.

Between 2012 and 2021, his most popular works were:

  • Vibrational properties of silicene and germanene (126 citations)
  • Two-dimensional hexagonal tin: ab initio geometry, stability, electronic structure and functionalization (82 citations)
  • First-principles study of strained 2D MoS2 (81 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Photon
  • Condensed matter physics

Andre Stesmans spends much of his time researching Condensed matter physics, Optoelectronics, Graphene, Silicene and Nanotechnology. His studies in Condensed matter physics integrate themes in fields like High-κ dielectric, Semiconductor and Density functional theory. Optoelectronics is often connected to Analytical chemistry in his work.

Andre Stesmans has included themes like Quantum dot, Scanning tunneling microscope and Band gap in his Graphene study. To a larger extent, Andre Stesmans studies Silicon with the aim of understanding Silicene. His research investigates the connection with Insulator and areas like Ion bombardment which intersect with concerns in Electron paramagnetic resonance.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev.
Nano Research (2012)

646 Citations

Classification and control of the origin of photoluminescence from Si nanocrystals

S Godefroo;M Hayne;M Hayne;Mihaela Jivanescu;Andre Stesmans.
Nature Nanotechnology (2008)

627 Citations

Electronic properties of hydrogenated silicene and germanene

Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois.
Applied Physics Letters (2011)

428 Citations

Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev.
Journal of Applied Physics (2000)

427 Citations

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard.
Journal of The Electrochemical Society (2008)

314 Citations

Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl.
Applied Physics Letters (2003)

266 Citations

Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns.
Journal of Applied Physics (2002)

265 Citations

Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

Michel Houssa;Valeri Afanas'ev;Andre Stesmans;MM Heyns.
Applied Physics Letters (2000)

259 Citations

Can silicon behave like graphene? A first-principles study

Michel Houssa;Geoffrey Pourtois;Valeri Afanas'ev;Andre Stesmans.
Applied Physics Letters (2010)

257 Citations

Internal photoemission of electrons and holes from (100)Si into HfO2

Valeri Afanas'ev;Andre Stesmans;F Chen;X Shi.
Applied Physics Letters (2002)

245 Citations

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