Andre Stesmans mainly focuses on Condensed matter physics, Oxide, Silicon, Electron paramagnetic resonance and Analytical chemistry. He combines subjects such as Density functional theory and Germanene, Silicene with his study of Condensed matter physics. His Oxide study which covers Optoelectronics that intersects with Thermal conduction.
As a part of the same scientific family, Andre Stesmans mostly works in the field of Silicon, focusing on Passivation and, on occasion, Amorphous silicon, Dissociation and Crystallographic defect. His research integrates issues of Annealing, Thermal, Hyperfine structure and Dangling bond in his study of Electron paramagnetic resonance. His studies in Analytical chemistry integrate themes in fields like Ellipsometry, Thin film, Chemical vapor deposition and Work function.
His primary scientific interests are in Electron paramagnetic resonance, Condensed matter physics, Silicon, Analytical chemistry and Oxide. His Electron paramagnetic resonance study combines topics from a wide range of disciplines, such as Annealing, Crystallographic defect, Paramagnetism and Dangling bond. The various areas that he examines in his Annealing study include Chemical physics and Dielectric.
In his research, Insulator is intimately related to Semiconductor, which falls under the overarching field of Condensed matter physics. His Silicon study is concerned with Optoelectronics in general. His research in Oxide intersects with topics in Molecular physics, Metal, Atomic physics and Mineralogy.
His scientific interests lie mostly in Condensed matter physics, Electron paramagnetic resonance, Optoelectronics, Oxide and Dangling bond. Band gap is the focus of his Condensed matter physics research. His work carried out in the field of Electron paramagnetic resonance brings together such families of science as Thermal, Crystallography, Crystallographic defect, Hyperfine structure and Paramagnetism.
Andre Stesmans combines subjects such as Analytical chemistry, Annealing, Work function, Atomic physics and Atomic layer deposition with his study of Oxide. His Dangling bond study is related to the wider topic of Silicon. His Silicon research is multidisciplinary, relying on both FOIL method and Layer.
Andre Stesmans spends much of his time researching Condensed matter physics, Optoelectronics, Graphene, Silicene and Nanotechnology. His studies in Condensed matter physics integrate themes in fields like High-κ dielectric, Semiconductor and Density functional theory. Optoelectronics is often connected to Analytical chemistry in his work.
Andre Stesmans has included themes like Quantum dot, Scanning tunneling microscope and Band gap in his Graphene study. To a larger extent, Andre Stesmans studies Silicon with the aim of understanding Silicene. His research investigates the connection with Insulator and areas like Ion bombardment which intersect with concerns in Electron paramagnetic resonance.
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Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev.
Nano Research (2012)
Classification and control of the origin of photoluminescence from Si nanocrystals
S Godefroo;M Hayne;M Hayne;Mihaela Jivanescu;Andre Stesmans.
Nature Nanotechnology (2008)
Electronic properties of hydrogenated silicene and germanene
Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois.
Applied Physics Letters (2011)
Trap-assisted tunneling in high permittivity gate dielectric stacks
Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev.
Journal of Applied Physics (2000)
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard.
Journal of The Electrochemical Society (2008)
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation
V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl.
Applied Physics Letters (2003)
Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2
Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns.
Journal of Applied Physics (2002)
Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation
Michel Houssa;Valeri Afanas'ev;Andre Stesmans;MM Heyns.
Applied Physics Letters (2000)
Can silicon behave like graphene? A first-principles study
Michel Houssa;Geoffrey Pourtois;Valeri Afanas'ev;Andre Stesmans.
Applied Physics Letters (2010)
Internal photoemission of electrons and holes from (100)Si into HfO2
Valeri Afanas'ev;Andre Stesmans;F Chen;X Shi.
Applied Physics Letters (2002)
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