2026 Andre Stesmans: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	75	3436	3319	31	31	705	21459

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

3436

3319

705

21459

Overview

Andre Stesmans is affiliated with KU Leuven in Belgium and has contributed to the fields of materials science and engineering. Their research focuses primarily on materials chemistry, with additional work in electrical and electronic engineering, electronic, optical and magnetic materials, atomic and molecular physics and optics, and biomedical engineering.

The scientist has published extensively on topics related to 2D materials and applications, MXene and MAX phase materials, ZnO doping and properties, chalcogenide semiconductor thin films, graphene research and applications, Ga2O3 and related materials, and phase-change materials and chalcogenides.

Frequent coauthors of Andre Stesmans include:

Michel Houssa
V. V. Afanas'ev
Ruishen Meng
Konstantina Iordanidou
Geoffrey Pourtois

Major publication venues where their work has appeared include:

Journal of Applied Physics
ECS Journal of Solid State Science and Technology
Physical Review Materials
Journal of Physics Condensed Matter
Applied Sciences

Recent papers by Andre Stesmans feature research on two-dimensional materials, with a focus on their magnetic and electronic properties. Selected papers include:

"Ferromagnetism and half-metallicity in two-dimensional M O (M = Ga, In) monolayers induced by hole doping" (2020), published in Physical Review Materials
"Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping" (2020), published in Journal of Applied Physics
"Band alignment at interfaces of two-dimensional materials: internal photoemission analysis" (2020), published in Journal of Physics Condensed Matter
"Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra" (2021), published in Journal of Applied Physics
"Analysis of Transferred MoS₂ Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation" (2020), published in ECS Journal of Solid State Science and Technology

The research contributions of Andre Stesmans cover various aspects of material properties at the atomic and molecular levels, with applications in electronic and photonic devices. Their work addresses fundamental questions in two-dimensional semiconductors and oxides, focusing on phenomena such as ferromagnetism, half-metallicity, band alignment, and defect formation.

Best Publications

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev

750
Citations
Classification and control of the origin of photoluminescence from Si nanocrystals

S Godefroo;M Hayne;M Hayne;Mihaela Jivanescu;Andre Stesmans

652
Citations
Electronic properties of hydrogenated silicene and germanene

Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois

505
Citations
Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev

451
Citations
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

348
Citations
Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

282
Citations
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl

276
Citations
Can silicon behave like graphene? A first-principles study

Michel Houssa;Geoffrey Pourtois;Valeri Afanas'ev;Andre Stesmans

273
Citations
Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

Michel Houssa;Valeri Afanas'ev;Andre Stesmans;MM Heyns

271
Citations
Internal photoemission of electrons and holes from (100)Si into HfO2

Valeri Afanas'ev;Andre Stesmans;F Chen;X Shi

267
Citations
Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

Unknown

253
Citations
Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship.

A. Stesmans

247
Citations
Vibrational properties of silicene and germanene

Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;B. van den Broek

227
Citations
Electron spin resonance features of interface defects in thermal (100)Si/SiO2

Andre Stesmans;Valeri Afanas'ev

212
Citations
Band alignment between (100)Si and complex rare earth∕transition metal oxides

Valeri Afanas'ev;Andre Stesmans;C Zhao;M Caymax

202
Citations
Ternary rare-earth metal oxide high-k layers on silicon oxide

C Zhao;T Witters;B Brijs;H Bender

197
Citations
Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators

Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

192
Citations
Structure and defects of detonation synthesis nanodiamond

K. Iakoubovskii;M.V. Baidakova;B.H. Wouters;A. Stesmans

189
Citations
Dissociation kinetics of hydrogen-passivated P b defects at the ( 111 ) S i / S i O 2 interface

Andre Stesmans

188
Citations
Shallow electron traps at the 4H–SiC/SiO2 interface

Valeri Afanas'ev;Andre Stesmans;M Bassler;G Pensl

186
Citations
Interface traps and dangling-bond defects in (100)Ge/HfO2

Valeri Afanas'ev;YG Fedorenko;Andre Stesmans

181
Citations
Band alignment and defect states at SiC/oxide interfaces

Valeri Afanas'ev;F Ciobanu;S Dimitrijev;G Pensl

181
Citations