World's Best Scientists 2026 revealed!
Andre Stesmans

Andre Stesmans

D-Index & Metrics

Materials Science

D-Index
75
Citations
21459
World Ranking
3434
National Ranking
31

Andre Stesmans publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Andre Stesmans sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 705 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Andre Stesmans D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Andre Stesmans sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 75 D-Index — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Andre Stesmans is affiliated with KU Leuven in Belgium and has contributed to the fields of materials science and engineering. Their research focuses primarily on materials chemistry, with additional work in electrical and electronic engineering, electronic, optical and magnetic materials, atomic and molecular physics and optics, and biomedical engineering.

The scientist has published extensively on topics related to 2D materials and applications, MXene and MAX phase materials, ZnO doping and properties, chalcogenide semiconductor thin films, graphene research and applications, Ga2O3 and related materials, and phase-change materials and chalcogenides.

Frequent coauthors of Andre Stesmans include:

  • Michel Houssa
  • V. V. Afanas'ev
  • Ruishen Meng
  • Konstantina Iordanidou
  • Geoffrey Pourtois

Major publication venues where their work has appeared include:

  • Journal of Applied Physics
  • ECS Journal of Solid State Science and Technology
  • Physical Review Materials
  • Journal of Physics Condensed Matter
  • Applied Sciences

Recent papers by Andre Stesmans feature research on two-dimensional materials, with a focus on their magnetic and electronic properties. Selected papers include:

  • "Ferromagnetism and half-metallicity in two-dimensional M O (M = Ga, In) monolayers induced by hole doping" (2020), published in Physical Review Materials
  • "Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping" (2020), published in Journal of Applied Physics
  • "Band alignment at interfaces of two-dimensional materials: internal photoemission analysis" (2020), published in Journal of Physics Condensed Matter
  • "Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra" (2021), published in Journal of Applied Physics
  • "Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation" (2020), published in ECS Journal of Solid State Science and Technology

The research contributions of Andre Stesmans cover various aspects of material properties at the atomic and molecular levels, with applications in electronic and photonic devices. Their work addresses fundamental questions in two-dimensional semiconductors and oxides, focusing on phenomena such as ferromagnetism, half-metallicity, band alignment, and defect formation.

Best Publications

  • Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

    Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev

  • Classification and control of the origin of photoluminescence from Si nanocrystals

    S Godefroo;M Hayne;M Hayne;Mihaela Jivanescu;Andre Stesmans

  • Electronic properties of hydrogenated silicene and germanene

    Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois

  • Trap-assisted tunneling in high permittivity gate dielectric stacks

    Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  • Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

    Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

  • Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

    V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl

  • Can silicon behave like graphene? A first-principles study

    Michel Houssa;Geoffrey Pourtois;Valeri Afanas'ev;Andre Stesmans

  • Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

    Michel Houssa;Valeri Afanas'ev;Andre Stesmans;MM Heyns

  • Internal photoemission of electrons and holes from (100)Si into HfO2

    Valeri Afanas'ev;Andre Stesmans;F Chen;X Shi

  • Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

    Unknown

  • Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship.

    A. Stesmans

  • Vibrational properties of silicene and germanene

    Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;B. van den Broek

  • Electron spin resonance features of interface defects in thermal (100)Si/SiO2

    Andre Stesmans;Valeri Afanas'ev

  • Band alignment between (100)Si and complex rare earth∕transition metal oxides

    Valeri Afanas'ev;Andre Stesmans;C Zhao;M Caymax

  • Ternary rare-earth metal oxide high-k layers on silicon oxide

    C Zhao;T Witters;B Brijs;H Bender

  • Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators

    Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

  • Structure and defects of detonation synthesis nanodiamond

    K. Iakoubovskii;M.V. Baidakova;B.H. Wouters;A. Stesmans

  • Dissociation kinetics of hydrogen-passivated P b defects at the ( 111 ) S i / S i O 2 interface

    Andre Stesmans

  • Shallow electron traps at the 4H–SiC/SiO2 interface

    Valeri Afanas'ev;Andre Stesmans;M Bassler;G Pensl

  • Interface traps and dangling-bond defects in (100)Ge/HfO2

    Valeri Afanas'ev;YG Fedorenko;Andre Stesmans

  • Band alignment and defect states at SiC/oxide interfaces

    Valeri Afanas'ev;F Ciobanu;S Dimitrijev;G Pensl

Frequent Co-Authors

Michel Houssa
Michel Houssa KU Leuven
M.M. Heyns
M.M. Heyns KU Leuven
Iuliana Radu
Iuliana Radu Taiwan Semiconductor Manufacturing Company (Taiwan)
S. De Gendt
S. De Gendt KU Leuven
Marc Meuris
Marc Meuris Hasselt University
Luigi Pantisano
Luigi Pantisano Intel (United States)
Gerhard Pensl
Gerhard Pensl University of Erlangen-Nuremberg

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