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2025

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Rising Stars

D-Index
32
Citations
3286
World Ranking
999
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316

Engineering and Technology

D-Index
38
Citations
4514
World Ranking
8192
National Ranking
1445

Jin Wei publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Jin Wei sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 135 publications — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Jin Wei D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Jin Wei sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 38 D-Index — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 2025 - Research.com Rising Stars Award

Overview

Jin Wei is affiliated with Peking University in China and has contributed significantly to research in semiconductor devices, with a focus on gallium nitride (GaN)-based technologies. Their body of work includes studies in electrical and electronic engineering, condensed matter physics, and materials chemistry, reflecting an interdisciplinary approach within engineering and physics and astronomy.

Their research topics prominently cover:

  • GaN-based semiconductor devices and materials
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Ga2O3 and related materials
  • Semiconductor Quantum Structures and Devices
  • ZnO doping and properties

Jin Wei has published extensively in several leading journals, with frequent appearances in:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Power Electronics
  • Applied Physics Letters
  • IEEE Journal of the Electron Devices Society

Selected recent papers authored by Jin Wei or within their research domain include:

  • GaN Power Integration Technology and Its Future Prospects, 2023, IEEE Transactions on Electron Devices
  • Gallium nitride-based complementary logic integrated circuits, 2021, Nature Electronics
  • OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy, 2020, IEEE Electron Device Letters
  • E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs, 2020, IEEE Electron Device Letters

Their frequent collaborators include:

  • Maojun Wang
  • Kevin J. Chen
  • Junjie Yang
  • Bo Shen
  • Zheyang Zheng

Jin Wei's research contributes to several subfields of study, with notable publication counts in:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Best Publications

  • Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

    Hanxing Wang;Jin Wei;Ruiliang Xie;Cheng Liu

  • Gallium nitride-based complementary logic integrated circuits

    Zheyang Zheng;Li Zhang;Wenjie Song;Sirui Feng

  • Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

    Jin Wei;Ruiliang Xie;Han Xu;Hanxing Wang

  • Integration of LPCVD-SiN x gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

    Mengyuan Hua;Zhaofu Zhang;Jin Wei;Jiacheng Lei

  • Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

    Jiabei He;Jin Wei;Song Yang;Yuru Wang

  • High ${I}_{ ext{ON}}$ and ${I}_{ ext{ON}}$ / ${I}_{ ext{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

    Zheyang Zheng;Wenjie Song;Li Zhang;Song Yang

  • Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

    Jin Wei;Shenghou Liu;Baikui Li;Xi Tang

  • Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

    Jin Wei;Meng Zhang;Huaping Jiang;Ching-Hsiang Cheng

  • Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

    Shu Yang;Chunhua Zhou;Shaowen Han;Jin Wei

  • Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

    Song Yang;Sen Huang;Jin Wei;Zheyang Zheng

  • Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations

    Jin Wei;Meng Zhang;Huaping Jiang;Hanxing Wang

  • Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

    Mengyuan Hua;Jin Wei;Gaofei Tang;Zhaofu Zhang

  • OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs

    Junting Chen;Mengyuan Hua;Jin Wei;Jiabei He

  • E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

    Chengcai Wang;Mengyuan Hua;Junting Chen;Song Yang

  • 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

    Jiacheng Lei;Jin Wei;Gaofei Tang;Zhaofu Zhang

  • SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

    Huaping Jiang;Jin Wei;Xiaoping Dai;Maolong Ke

  • Planar GaN Power Integration – The World is Flat

    Kevin J. Chen;Jin Wei;Gaofei Tang;Han Xu

  • GaN power IC technology on p-GaN gate HEMT platform

    Jin Wei;Gaofei Tang;Ruiliang Xie;Kevin Jing Chen

  • Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

    Jin Wei;Huaping Jiang;Qimeng Jiang;Kevin J. Chen

  • Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

    Jin Wei;Shenghou Liu;Baikui Li;Xi Tang

  • Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss

    Huaping Jiang;Jin Wei;Xiaoping Dai;Maolong Ke

  • Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET

    Jiahui Sun;Jin Wei;Zheyang Zheng;Yuru Wang

Frequent Co-Authors

Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Bo Zhang
Bo Zhang University of Electronic Science and Technology of China
Baoling Huang
Baoling Huang Hong Kong University of Science and Technology
Laili Wang
Laili Wang Xi'an Jiaotong University
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Ning Wang
Ning Wang Hong Kong University of Science and Technology
Tao Wang
Tao Wang Stanford University
Hoi Sing Kwok
Hoi Sing Kwok Hong Kong University of Science and Technology
Man Wong
Man Wong Hong Kong University of Science and Technology

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