World's Best Scientists 2026 revealed!
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Jin Wei
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Rising Stars
2025

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Rising Stars 32 999 995 316 316 135 3286
Engineering and Technology 38 8192 7898 1445 1438 135 4514

Jin Wei publications per year

The chart shows the history of publications by Jin Wei between 2012 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Jin Wei published across 14 years, from 2012 to 2025, averaging 15.3 papers a year. Output peaked at 31 publications in 2020. 50 of the 214 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 2012 to 2025. Vertical axis: number of publications, 0 to 31. Peak 31 publications in 2020. 2012: 2 publications 2013: 2 publications 2014: 2 publications 2015: 4 publications 2016: 12 publications 2017: 18 publications 2018: 13 publications 2019: 27 publications 2020: 31 publications 2021: 19 publications 2022: 11 publications 2023: 23 publications 2024: 28 publications 2025: 22 publications
2012 2025

214 publications in total across all disciplines

View publications per year as a table
Jin Wei: publications per year, 2012 to 2025
Year Publications
2012 2
2013 2
2014 2
2015 4
2016 12
2017 18
2018 13
2019 27
2020 31
2021 19
2022 11
2023 23
2024 28
2025 22
Total 214
Download as CSV

Jin Wei publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Jin Wei sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: publications, 38–47 to 804+. Vertical axis: number of scientists, 0 to 457. Most scientists, 457, have 148–157 publications. The last bar groups every scientist with 804 publications or more. The highlighted bar, 128–137 publications, is where this scientist sits. 38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38–47 publications 804+

This scientist: 135 publications — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

View publications distribution as a table
Number of Engineering and Technology scientists by publication count, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
Publications Scientists This scientist
38–47 20
48–57 35
58–67 96
68–77 135
78–87 190
88–97 259
98–107 283
108–117 369
118–127 341
128–137 386 135
138–147 372
148–157 457
158–167 415
168–177 407
178–187 421
188–197 378
198–207 403
208–217 317
218–227 346
228–237 321
238–247 260
248–257 280
258–267 240
268–277 214
278–287 242
288–297 203
298–307 166
308–317 154
318–327 175
328–337 159
338–347 99
348–357 131
358–367 106
368–377 118
378–387 97
388–397 108
398–407 82
408–417 71
418–427 64
428–437 55
438–447 54
448–457 60
458–467 47
468–477 40
478–487 30
488–497 29
498–507 38
508–517 40
518–527 32
528–537 23
538–547 28
548–557 23
558–567 19
568–577 16
578–587 17
588–597 18
598–607 22
608–617 15
618–627 9
628–637 11
638–647 21
648–657 12
658–667 9
668–677 11
678–687 9
688–697 6
698–707 14
708–717 7
718–727 8
728–737 10
738–747 9
748–757 5
758–767 5
768–777 11
778–787 7
788–797 2
798–803 4
804+ 100
Download as CSV

Jin Wei D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Jin Wei sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: D-Index, 30 to 107+. Vertical axis: number of scientists, 0 to 426. Most scientists, 426, have 42 D-Index. The last bar groups every scientist with 107 D-Index or more. The highlighted bar, 38 D-Index, is where this scientist sits. 30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 38 D-Index — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

View D-Index distribution as a table
Number of Engineering and Technology scientists by D-index, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
D-Index Scientists This scientist
30 59
31 114
32 129
33 189
34 200
35 262
36 311
37 312
38 350 38
39 385
40 348
41 362
42 426
43 380
44 310
45 341
46 301
47 306
48 271
49 246
50 210
51 253
52 213
53 221
54 195
55 186
56 170
57 167
58 166
59 144
60 152
61 141
62 138
63 131
64 118
65 114
66 119
67 95
68 87
69 77
70 89
71 69
72 54
73 46
74 55
75 54
76 49
77 53
78 46
79 28
80 39
81 36
82 24
83 26
84 36
85 18
86 25
87 19
88 26
89 27
90 23
91 15
92 12
93 9
94 15
95 10
96 13
97 13
98 9
99 7
100 7
101 8
102 7
103 7
104 9
105 6
106 9
107+ 99
Download as CSV

Research.com Recognitions

  • 2025 - Research.com Rising Stars Award

Overview

Jin Wei is affiliated with Peking University in China and has contributed significantly to research in semiconductor devices, with a focus on gallium nitride (GaN)-based technologies. Their body of work includes studies in electrical and electronic engineering, condensed matter physics, and materials chemistry, reflecting an interdisciplinary approach within engineering and physics and astronomy.

Their research topics prominently cover:

  • GaN-based semiconductor devices and materials
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Ga2O3 and related materials
  • Semiconductor Quantum Structures and Devices
  • ZnO doping and properties

Jin Wei has published extensively in several leading journals, with frequent appearances in:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Power Electronics
  • Applied Physics Letters
  • IEEE Journal of the Electron Devices Society

Selected recent papers authored by Jin Wei or within their research domain include:

  • GaN Power Integration Technology and Its Future Prospects, 2023, IEEE Transactions on Electron Devices
  • Gallium nitride-based complementary logic integrated circuits, 2021, Nature Electronics
  • OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy, 2020, IEEE Electron Device Letters
  • E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs, 2020, IEEE Electron Device Letters

Their frequent collaborators include:

  • Maojun Wang
  • Kevin J. Chen
  • Junjie Yang
  • Bo Shen
  • Zheyang Zheng

Jin Wei's research contributes to several subfields of study, with notable publication counts in:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Best Publications

  • Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

    Hanxing Wang;Jin Wei;Ruiliang Xie;Cheng Liu

  • Gallium nitride-based complementary logic integrated circuits

    Zheyang Zheng;Li Zhang;Wenjie Song;Sirui Feng

  • Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

    Jin Wei;Ruiliang Xie;Han Xu;Hanxing Wang

  • Integration of LPCVD-SiN x gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

    Mengyuan Hua;Zhaofu Zhang;Jin Wei;Jiacheng Lei

  • Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

    Jiabei He;Jin Wei;Song Yang;Yuru Wang

  • High ${I}_{ ext{ON}}$ and ${I}_{ ext{ON}}$ / ${I}_{ ext{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

    Zheyang Zheng;Wenjie Song;Li Zhang;Song Yang

  • Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

    Jin Wei;Shenghou Liu;Baikui Li;Xi Tang

  • Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

    Jin Wei;Meng Zhang;Huaping Jiang;Ching-Hsiang Cheng

  • Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

    Shu Yang;Chunhua Zhou;Shaowen Han;Jin Wei

  • Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

    Song Yang;Sen Huang;Jin Wei;Zheyang Zheng

  • Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations

    Jin Wei;Meng Zhang;Huaping Jiang;Hanxing Wang

  • Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

    Mengyuan Hua;Jin Wei;Gaofei Tang;Zhaofu Zhang

  • OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs

    Junting Chen;Mengyuan Hua;Jin Wei;Jiabei He

  • E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

    Chengcai Wang;Mengyuan Hua;Junting Chen;Song Yang

  • 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

    Jiacheng Lei;Jin Wei;Gaofei Tang;Zhaofu Zhang

  • SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

    Huaping Jiang;Jin Wei;Xiaoping Dai;Maolong Ke

  • Planar GaN Power Integration – The World is Flat

    Kevin J. Chen;Jin Wei;Gaofei Tang;Han Xu

  • GaN power IC technology on p-GaN gate HEMT platform

    Jin Wei;Gaofei Tang;Ruiliang Xie;Kevin Jing Chen

  • Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

    Jin Wei;Huaping Jiang;Qimeng Jiang;Kevin J. Chen

  • Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

    Jin Wei;Shenghou Liu;Baikui Li;Xi Tang

  • Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss

    Huaping Jiang;Jin Wei;Xiaoping Dai;Maolong Ke

  • Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET

    Jiahui Sun;Jin Wei;Zheyang Zheng;Yuru Wang

Frequent Co-Authors

Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Bo Zhang
Bo Zhang University of Electronic Science and Technology of China
Baoling Huang
Baoling Huang Hong Kong University of Science and Technology
Laili Wang
Laili Wang Xi'an Jiaotong University
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Ning Wang
Ning Wang Hong Kong University of Science and Technology
Tao Wang
Tao Wang Stanford University
Feng Zhang
Feng Zhang MIT
Hoi Sing Kwok
Hoi Sing Kwok Hong Kong University of Science and Technology
Man Wong
Man Wong Hong Kong University of Science and Technology

External Links

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Best Scientists Citing Jin Wei

Bo Zhang

Bo Zhang

University of Electronic Science and Technology of China

Publications: 48

Yue Hao

Yue Hao

Xidian University

Publications: 37

Kevin J. Chen

Kevin J. Chen

Hong Kong University of Science and Technology

Publications: 36

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 20

Elison Matioli

Elison Matioli

École Polytechnique Fédérale de Lausanne

Publications: 18

Qian Sun

Qian Sun

Chinese Academy of Sciences

Publications: 12

Sen Huang

Sen Huang

Chinese Academy of Sciences

Publications: 11

Shu Yang

Shu Yang

Zhejiang University

Publications: 11

Edward Yi Chang

Edward Yi Chang

National Yang Ming Chiao Tung University

Publications: 11

Kuang Sheng

Kuang Sheng

Zhejiang University

Publications: 10

Stefaan Decoutere

Stefaan Decoutere

Imec

Publications: 9

Matteo Meneghini

Matteo Meneghini

University of Padua

Publications: 9

Chunfu Zhang

Chunfu Zhang

Xidian University

Publications: 9

Enrico Zanoni

Enrico Zanoni

University of Padua

Publications: 8

Gaudenzio Meneghesso

Gaudenzio Meneghesso

University of Padua

Publications: 8

Oliver Ambacher

Oliver Ambacher

University of Freiburg

Publications: 8

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