Jin Wei

Research.com Recognitions

• 2025 - Research.com Rising Stars Award

Overview

Best Publications

• Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

  Hanxing Wang;Jin Wei;Ruiliang Xie;Cheng Liu

  275
  Citations

• Gallium nitride-based complementary logic integrated circuits

  Zheyang Zheng;Li Zhang;Wenjie Song;Sirui Feng

  275
  Citations

• Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

  Jin Wei;Ruiliang Xie;Han Xu;Hanxing Wang

  187
  Citations

• Integration of LPCVD-SiN x gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

  Mengyuan Hua;Zhaofu Zhang;Jin Wei;Jiacheng Lei

  137
  Citations

• Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

  Jiabei He;Jin Wei;Song Yang;Yuru Wang

  115
  Citations

• High ${I}_{ ext{ON}}$ and ${I}_{ ext{ON}}$ / ${I}_{ ext{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

  Zheyang Zheng;Wenjie Song;Li Zhang;Song Yang

  115
  Citations

• Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

  Jin Wei;Shenghou Liu;Baikui Li;Xi Tang

  111
  Citations

• Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

  Jin Wei;Meng Zhang;Huaping Jiang;Ching-Hsiang Cheng

  104
  Citations

• Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

  Shu Yang;Chunhua Zhou;Shaowen Han;Jin Wei

  93
  Citations

• Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

  Song Yang;Sen Huang;Jin Wei;Zheyang Zheng

  84
  Citations

• Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations

  Jin Wei;Meng Zhang;Huaping Jiang;Hanxing Wang

  83
  Citations

• Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

  Mengyuan Hua;Jin Wei;Gaofei Tang;Zhaofu Zhang

  83
  Citations

• OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs

  Junting Chen;Mengyuan Hua;Jin Wei;Jiabei He

  81
  Citations

• E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

  Chengcai Wang;Mengyuan Hua;Junting Chen;Song Yang

  76
  Citations

• 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

  Jiacheng Lei;Jin Wei;Gaofei Tang;Zhaofu Zhang

  74
  Citations

• SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

  Huaping Jiang;Jin Wei;Xiaoping Dai;Maolong Ke

  70
  Citations

• Planar GaN Power Integration – The World is Flat

  Kevin J. Chen;Jin Wei;Gaofei Tang;Han Xu

  69
  Citations

• GaN power IC technology on p-GaN gate HEMT platform

  Jin Wei;Gaofei Tang;Ruiliang Xie;Kevin Jing Chen

  60
  Citations

• Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

  Jin Wei;Huaping Jiang;Qimeng Jiang;Kevin J. Chen

  60
  Citations

• Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

  Jin Wei;Shenghou Liu;Baikui Li;Xi Tang

  50
  Citations

• Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss

  Huaping Jiang;Jin Wei;Xiaoping Dai;Maolong Ke

  47
  Citations

• Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET

  Jiahui Sun;Jin Wei;Zheyang Zheng;Yuru Wang

  44
  Citations