His primary areas of investigation include Optoelectronics, Photoluminescence, Wide-bandgap semiconductor, Metalorganic vapour phase epitaxy and Dislocation. His research integrates issues of Layer, Epitaxy, Nanorod and Quantum well in his study of Optoelectronics. His study in Photoluminescence is interdisciplinary in nature, drawing from both Condensed matter physics, Exciton, Doping, Quantum-confined Stark effect and Light-emitting diode.
His biological study spans a wide range of topics, including Electron mobility, Semiconductor and Optics. In his research on the topic of Metalorganic vapour phase epitaxy, X-ray crystallography, Porosity and Composite material is strongly related with Chemical vapor deposition. His Dislocation study also includes
Tao Wang mostly deals with Optoelectronics, Photoluminescence, Quantum well, Wide-bandgap semiconductor and Sapphire. Tao Wang has researched Optoelectronics in several fields, including Metalorganic vapour phase epitaxy, Epitaxy and Optics. His Metalorganic vapour phase epitaxy study integrates concerns from other disciplines, such as Chemical vapor deposition, Quantum dot, Cathodoluminescence, Transmission electron microscopy and Dislocation.
His work in Transmission electron microscopy tackles topics such as Layer which are related to areas like Crystallography. In his work, Wafer is strongly intertwined with Nanorod, which is a subfield of Photoluminescence. His Quantum well research incorporates themes from Spectroscopy and Spontaneous emission.
His primary areas of study are Optoelectronics, Diode, Light-emitting diode, Epitaxy and Sapphire. His Optoelectronics research is multidisciplinary, incorporating elements of Crystal and Scanning electron microscope. Tao Wang has included themes like Electroluminescence and Quantum efficiency in his Light-emitting diode study.
His Epitaxy research includes themes of Quantum well, Fermi gas and Nucleation. His work on Sapphire substrate as part of general Sapphire study is frequently linked to Template, bridging the gap between disciplines. His Wavelength research includes elements of Indium and Photoluminescence.
Optoelectronics, Diode, Epitaxy, Light-emitting diode and Molecular beam epitaxy are his primary areas of study. The Optoelectronics study combines topics in areas such as Sapphire and Crystal. His Diode research is multidisciplinary, relying on both Gallium nitride, Electroluminescence, Quantum well, Wavelength-division multiplexing and Polar.
His studies deal with areas such as Cmos compatible, Substrate, Graphene and Nucleation as well as Epitaxy. His Light-emitting diode study combines topics in areas such as Direct and indirect band gaps, Transistor, Laser and Common emitter. His research investigates the connection between Molecular beam epitaxy and topics such as Electron that intersect with problems in Heterojunction.
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Reading Digits in Natural Images with Unsupervised Feature Learning
Yuval Netzer;Tao Wang;Adam Coates;Alessandro Bissacco.
End-to-end text recognition with convolutional neural networks
Tao Wang;David J. Wu;Adam Coates;Andrew Y. Ng.
international conference on pattern recognition (2012)
Deep learning with COTS HPC systems
Adam Coates;Brody Huval;Tao Wang;David Wu.
international conference on machine learning (2013)
An Empirical Evaluation of Deep Learning on Highway Driving
Brody Huval;Tao Wang;Sameep Tandon;Jeff Kiske.
arXiv: Robotics (2015)
Text Detection and Character Recognition in Scene Images with Unsupervised Feature Learning
Adam Coates;Blake Carpenter;Carl Case;Sanjeev Satheesh.
international conference on document analysis and recognition (2011)
Convolutional neural networks over tree structures for programming language processing
Lili Mou;Ge Li;Lu Zhang;Tao Wang.
national conference on artificial intelligence (2016)
A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE
S Sakai;T Wang;Y Morishima;Y Naoi.
Journal of Crystal Growth (2000)
Role of Dislocation in InGaN Phase Separation.
Tomoya Sugahara;Maosheng Hao;Tao Wang;Daisuke Nakagawa.
Japanese Journal of Applied Physics (1998)
Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures
J. Bai;T. Wang;S. Sakai.
Journal of Applied Physics (2000)
1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
T. Wang;Y. H. Liu;Y. B. Lee;J. P. Ao.
Applied Physics Letters (2002)
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