Tao Wang

Overview

Best Publications

• The 2020 UV emitter roadmap

  Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  482
  Citations

• A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE

  S Sakai;T Wang;Y Morishima;Y Naoi

  176
  Citations

• Role of Dislocation in InGaN Phase Separation.

  Tomoya Sugahara;Maosheng Hao;Tao Wang;Daisuke Nakagawa

  158
  Citations

• Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes

  T. Wang;J. Bai;S. Sakai;J. K. Ho

  156
  Citations

• 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate

  T. Wang;Y. H. Liu;Y. B. Lee;J. P. Ao

  151
  Citations

• Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells

  T. Wang;D. Nakagawa;J. Wang;T. Sugahara

  145
  Citations

• Luminescence of nanometer‐sized amorphous silicon nitride solids

  Chi‐mei Mo;Lide Zhang;Cunyi Xie;Tao Wang

  136
  Citations

• The role of dynamic measurements in correlating structure with optoelectronic properties in polymer : fullerene bulk-heterojunction solar cells.

  Andrew J Pearson;Tao Wang;David G Lidzey

  134
  Citations

• Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

  Philip David King;T. D. Veal;Paul Harvey Jefferson;C. F. McConville

  127
  Citations

• Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

  T Wang

  118
  Citations

• Direct measurement of magnetoelectric exchange in self-assembled epitaxial BiFeO3–CoFe2O4 nanocomposite thin films

  Li Yan;Zengping Xing;Zhiguang Wang;Tao Wang

  116
  Citations

• Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods

  Q Wang;J Bai;Y P Gong;T Wang

  106
  Citations

• A study of dislocations in AlN and GaN films grown on sapphire substrates

  J. Bai;T. Wang;T. Wang;P.J. Parbrook;K.B. Lee

  106
  Citations

• Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

  J. P. O’Neill;I. M. Ross;A. G. Cullis;T. Wang

  105
  Citations

• GaN structures having low dislocation density and methods of manufacture

  Tao Wang

  103
  Citations

• Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

  T Wang;Y.H Liu;Y.B Lee;Y Izumi

  98
  Citations

• Nanozymes: A New Disease Imaging Strategy.

  Peixia Wang;Tao Wang;Juanji Hong;Xiyun Yan

  98
  Citations

• Experimental and theoretical study of strain-induced AlGaAs/GaAs quantum dots using a self-organized GaSb island as a stressor

  T. Wang;A. Forchel

  97
  Citations

• Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films

  Tao Wang;Yanmei Liu;Qingqing Fang;Mingzai Wu

  92
  Citations

• Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition

  T. Wang;T. Shirahama;H. B. Sun;H. X. Wang

  87
  Citations

• Optical investigation of InGaN/GaN multiple quantum wells

  T. Wang;D. Nakagawa;M. Lachab;T. Sugahara

  85
  Citations

• Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source.

  Shangfeng Liu;Wei Luo;Dan Li;Ye Yuan

  85
  Citations