D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 72 Citations 15,712 620 World Ranking 471 National Ranking 238
Materials Science D-index 76 Citations 17,813 684 World Ranking 1817 National Ranking 596

Research.com Recognitions

Awards & Achievements

1987 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of study are Optoelectronics, Molecular beam epitaxy, Condensed matter physics, Heterojunction and Epitaxy. His Optoelectronics study combines topics in areas such as Field-effect transistor and Semiconductor device. His Molecular beam epitaxy research is multidisciplinary, relying on both Silicon, Electronic band structure, Analytical chemistry, Wurtzite crystal structure and Superlattice.

Hadis Morkoç combines subjects such as Quantum well and Electron with his study of Condensed matter physics. In his work, Heterojunction bipolar transistor is strongly intertwined with Common emitter, which is a subfield of Heterojunction. His Epitaxy study integrates concerns from other disciplines, such as Crystallography, Crystal growth, Dislocation, Sapphire and Substrate.

His most cited work include:

  • A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES (8513 citations)
  • Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies (2255 citations)
  • GaN, AlN, and InN: A review (2238 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Molecular beam epitaxy, Heterojunction, Condensed matter physics and Epitaxy. His Optoelectronics research incorporates elements of Field-effect transistor and Gallium nitride. His work in Molecular beam epitaxy addresses subjects such as Analytical chemistry, which are connected to disciplines such as Annealing.

His studies deal with areas such as Transistor, Bipolar junction transistor, Gallium arsenide, Semiconductor and Band gap as well as Heterojunction. As part of one scientific family, Hadis Morkoç deals mainly with the area of Condensed matter physics, narrowing it down to issues related to the Quantum well, and often Atomic physics. The Epitaxy study combines topics in areas such as Crystallography, Crystal growth, Transmission electron microscopy and Chemical vapor deposition.

He most often published in these fields:

  • Optoelectronics (56.97%)
  • Molecular beam epitaxy (27.18%)
  • Heterojunction (23.80%)

What were the highlights of his more recent work (between 2008-2021)?

  • Optoelectronics (56.97%)
  • Heterojunction (23.80%)
  • Gallium nitride (10.56%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Heterojunction, Gallium nitride, Condensed matter physics and Photoluminescence are his primary areas of study. His study focuses on the intersection of Optoelectronics and fields such as Sapphire with connections in the field of Molecular beam epitaxy. Semiconductor is closely connected to Doping in his research, which is encompassed under the umbrella topic of Molecular beam epitaxy.

He has included themes like Stress, Noise, Transistor, Band gap and Infrasound in his Heterojunction study. His work carried out in the field of Condensed matter physics brings together such families of science as Plasmon, Electron, Fermi gas and Electric field. Hadis Morkoç interconnects Spontaneous emission, Luminescence, Exciton, Quantum well and Molecular physics in the investigation of issues within Photoluminescence.

Between 2008 and 2021, his most popular works were:

  • Zinc Oxide: Fundamentals, Materials and Device Technology (567 citations)
  • ZnO Devices and Applications: A Review of Current Status and Future Prospects (512 citations)
  • Transparent conducting oxides for electrode applications in light emitting and absorbing devices (428 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of investigation include Optoelectronics, Wide-bandgap semiconductor, Heterojunction, Light-emitting diode and Condensed matter physics. His research in Optoelectronics intersects with topics in Gallium nitride and Electron. His biological study spans a wide range of topics, including Annealing, Semiconductor, Analytical chemistry, Substrate and Photoexcitation.

His Heterojunction study combines topics in areas such as Phase noise, Field-effect transistor, Noise, Band gap and Infrasound. His research in Band gap focuses on subjects like Molecular beam epitaxy, which are connected to Lattice constant. As part of the same scientific family, Hadis Morkoç usually focuses on Condensed matter physics, concentrating on Plasmon and intersecting with Transistor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Processing, Structure, Properties, and Applications of PZT Thin Films

N. Izyumskaya;Y.-I. Alivov;S.-J. Cho;H. Morkoç.
Critical Reviews in Solid State and Materials Sciences (2007)

467 Citations

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Jinqiao Xie;Xianfeng Ni;Qian Fan;Ryoko Shimada.
Applied Physics Letters (2008)

444 Citations

Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN

S. Ruvimov;Z. Liliental‐Weber;J. Washburn;K. J. Duxstad.
Applied Physics Letters (1996)

373 Citations

Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

R. Fischer;H. Morkoç;D. A. Neumann;H. Zabel.
Journal of Applied Physics (1986)

333 Citations

High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

G. Y. Xu;A. Salvador;W. Kim;Z. Fan.
Applied Physics Letters (1997)

314 Citations

High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

Ozgur Aktas;Z. F. Fan;S. N. Mohammad;A. E. Botchkarev.
Applied Physics Letters (1996)

292 Citations

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Xianfeng Ni;Qian Fan;Ryoko Shimada;Ümit Özgür.
Applied Physics Letters (2008)

286 Citations

Model for modulation doped field effect transistor

T.J. Drummond;H. Morkoc;K. Lee;M. Shur.
IEEE Electron Device Letters (1982)

241 Citations

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

R. Fischer;W. T. Masselink;J. Klem;T. Henderson.
Journal of Applied Physics (1985)

234 Citations

Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature

T. J. Shewchuk;P. C. Chapin;P. D. Coleman;W. Kopp.
Applied Physics Letters (1985)

229 Citations

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