1987 - Fellow of the American Association for the Advancement of Science (AAAS)
His primary areas of study are Optoelectronics, Molecular beam epitaxy, Condensed matter physics, Heterojunction and Epitaxy. His Optoelectronics study combines topics in areas such as Field-effect transistor and Semiconductor device. His Molecular beam epitaxy research is multidisciplinary, relying on both Silicon, Electronic band structure, Analytical chemistry, Wurtzite crystal structure and Superlattice.
Hadis Morkoç combines subjects such as Quantum well and Electron with his study of Condensed matter physics. In his work, Heterojunction bipolar transistor is strongly intertwined with Common emitter, which is a subfield of Heterojunction. His Epitaxy study integrates concerns from other disciplines, such as Crystallography, Crystal growth, Dislocation, Sapphire and Substrate.
His scientific interests lie mostly in Optoelectronics, Molecular beam epitaxy, Heterojunction, Condensed matter physics and Epitaxy. His Optoelectronics research incorporates elements of Field-effect transistor and Gallium nitride. His work in Molecular beam epitaxy addresses subjects such as Analytical chemistry, which are connected to disciplines such as Annealing.
His studies deal with areas such as Transistor, Bipolar junction transistor, Gallium arsenide, Semiconductor and Band gap as well as Heterojunction. As part of one scientific family, Hadis Morkoç deals mainly with the area of Condensed matter physics, narrowing it down to issues related to the Quantum well, and often Atomic physics. The Epitaxy study combines topics in areas such as Crystallography, Crystal growth, Transmission electron microscopy and Chemical vapor deposition.
Optoelectronics, Heterojunction, Gallium nitride, Condensed matter physics and Photoluminescence are his primary areas of study. His study focuses on the intersection of Optoelectronics and fields such as Sapphire with connections in the field of Molecular beam epitaxy. Semiconductor is closely connected to Doping in his research, which is encompassed under the umbrella topic of Molecular beam epitaxy.
He has included themes like Stress, Noise, Transistor, Band gap and Infrasound in his Heterojunction study. His work carried out in the field of Condensed matter physics brings together such families of science as Plasmon, Electron, Fermi gas and Electric field. Hadis Morkoç interconnects Spontaneous emission, Luminescence, Exciton, Quantum well and Molecular physics in the investigation of issues within Photoluminescence.
His primary areas of investigation include Optoelectronics, Wide-bandgap semiconductor, Heterojunction, Light-emitting diode and Condensed matter physics. His research in Optoelectronics intersects with topics in Gallium nitride and Electron. His biological study spans a wide range of topics, including Annealing, Semiconductor, Analytical chemistry, Substrate and Photoexcitation.
His Heterojunction study combines topics in areas such as Phase noise, Field-effect transistor, Noise, Band gap and Infrasound. His research in Band gap focuses on subjects like Molecular beam epitaxy, which are connected to Lattice constant. As part of the same scientific family, Hadis Morkoç usually focuses on Condensed matter physics, concentrating on Plasmon and intersecting with Transistor.
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Processing, Structure, Properties, and Applications of PZT Thin Films
N. Izyumskaya;Y.-I. Alivov;S.-J. Cho;H. Morkoç.
Critical Reviews in Solid State and Materials Sciences (2007)
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
Jinqiao Xie;Xianfeng Ni;Qian Fan;Ryoko Shimada.
Applied Physics Letters (2008)
Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN
S. Ruvimov;Z. Liliental‐Weber;J. Washburn;K. J. Duxstad.
Applied Physics Letters (1996)
Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
R. Fischer;H. Morkoç;D. A. Neumann;H. Zabel.
Journal of Applied Physics (1986)
High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
G. Y. Xu;A. Salvador;W. Kim;Z. Fan.
Applied Physics Letters (1997)
High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
Ozgur Aktas;Z. F. Fan;S. N. Mohammad;A. E. Botchkarev.
Applied Physics Letters (1996)
Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
Xianfeng Ni;Qian Fan;Ryoko Shimada;Ümit Özgür.
Applied Physics Letters (2008)
Model for modulation doped field effect transistor
T.J. Drummond;H. Morkoc;K. Lee;M. Shur.
IEEE Electron Device Letters (1982)
Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
R. Fischer;W. T. Masselink;J. Klem;T. Henderson.
Journal of Applied Physics (1985)
Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature
T. J. Shewchuk;P. C. Chapin;P. D. Coleman;W. Kopp.
Applied Physics Letters (1985)
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