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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
107
Citations
71231
World Ranking
120
National Ranking
58

Materials Science

D-Index
117
Citations
79287
World Ranking
537
National Ranking
190

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 1987 - Fellow of the American Association for the Advancement of Science (AAAS)

Best Publications

  • A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES

    Ü. Özgür;Ya. I. Alivov;C. Liu;A. Teke

  • Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

    H. Morkoç;S. Strite;G. B. Gao;M. E. Lin

  • Luminescence properties of defects in GaN

    Michael A. Reshchikov;Hadis Morkoç

  • ZnO Devices and Applications: A Review of Current Status and Future Prospects

    Ümit Özgür;Daniel Hofstetter;Hadis Morkoç

  • Emerging gallium nitride based devices

    S.N. Mohammad;A.A. Salvador;H. Morkoc

  • Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

    G. Martin;A. Botchkarev;Angus Rockett;H. Morkoç

  • Ferromagnetism of ZnO and GaN: A Review

    C. Liu;F. Yun;H. Morkoç

  • Transparent conducting oxides for electrode applications in light emitting and absorbing devices

    Huiyong Liu;V. Avrutin;N. Izyumskaya;Ü. Özgür

  • Gallium arsenide and other compound semiconductors on silicon

    S. F. Fang;K. Adomi;S. Iyer;H. Morkoç

  • Folded acoustic and quantized optic phonons in (GaAl)As superlattices.

    C. Colvard;T. A. Gant;M. V. Klein;R. Merlin

  • Excitonic fine structure and recombination dynamics in single-crystalline ZnO

    A. Teke;Ü. Özgür;S. Doğan;X. Gu

  • Progress and prospects of group-III nitride semiconductors

    S.N Mohammad;H Morkoç

  • "Dressed excitons" in a multiple-quantum-well structure: Evidence for an optical Stark effect with femtosecond response time.

    A. Mysyrowicz;D. Hulin;A. Antonetti;A. Migus

  • Low resistance ohmic contacts on wide band‐gap GaN

    M. E. Lin;Z. Ma;F. Y. Huang;Z. F. Fan

  • Very low resistance multilayer Ohmic contact to n‐GaN

    Zhifang Fan;S. Noor Mohammad;Wook Kim;Özgür Aktas

  • Processing, Structure, Properties, and Applications of PZT Thin Films

    N. Izyumskaya;Y.-I. Alivov;S.-J. Cho;H. Morkoç

  • Comprehensive analysis of Si-doped Al x Ga 1-x As (x=0 to 1): Theory and experiments

    Naresh Chand;Tim Henderson;John Klem;W. Ted Masselink

  • Resonant cavity-enhanced (RCE) photodetectors

    K. Kishino;M.S. Unlu;J.-I. Chyi;J. Reed

  • Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN

    Donald C. Reynolds;David C. Look;B. Jogai;H. Morkoç

  • An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

    S. Strite;J. Ruan;Z. Li;A. Salvador

  • On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

    Jinqiao Xie;Xianfeng Ni;Qian Fan;Ryoko Shimada

  • Negative differential resistance through real‐space electron transfer

    K. Hess;H. Morkoç;H. Shichijo;B. G. Streetman

  • Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN

    S. Ruvimov;Z. Liliental‐Weber;J. Washburn;K. J. Duxstad

  • Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

    R. Fischer;H. Morkoç;D. A. Neumann;H. Zabel

  • Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells

    G. Ji;D. Huang;U. K. Reddy;T. S. Henderson

  • High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

    G. Y. Xu;A. Salvador;W. Kim;Z. Fan

  • Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

    G. Martin;S. Strite;A. Botchkarev;A. Agarwal

  • High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

    Ozgur Aktas;Z. F. Fan;S. N. Mohammad;A. E. Botchkarev

Frequent Co-Authors

Ümit Özgür
Ümit Özgür Virginia Commonwealth University
John F. Klem
John F. Klem Sandia National Laboratories
David K. Ferry
David K. Ferry Arizona State University
Jen-Inn Chyi
Jen-Inn Chyi National Central University
Henry O. Everitt
Henry O. Everitt Duke University
Necmi Biyikli
Necmi Biyikli University of Connecticut
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Robert R. Alfano
Robert R. Alfano City College of New York
M. S. Ünlü
M. S. Ünlü Boston University
Amnon Yariv
Amnon Yariv California Institute of Technology

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