World's Best Scientists 2026 revealed!
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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
107
Citations
71231
World Ranking
120
National Ranking
58

Materials Science

D-Index
117
Citations
79287
World Ranking
537
National Ranking
189

Hadis Morkoç publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hadis Morkoç sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,329 publications — 100th percentile

100% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hadis Morkoç D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hadis Morkoç sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 107 D-Index — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 1987 - Fellow of the American Association for the Advancement of Science (AAAS)

Best Publications

  • A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES

    Ü. Özgür;Ya. I. Alivov;C. Liu;A. Teke

  • Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

    H. Morkoç;S. Strite;G. B. Gao;M. E. Lin

  • Luminescence properties of defects in GaN

    Michael A. Reshchikov;Hadis Morkoç

  • ZnO Devices and Applications: A Review of Current Status and Future Prospects

    Ümit Özgür;Daniel Hofstetter;Hadis Morkoç

  • Emerging gallium nitride based devices

    S.N. Mohammad;A.A. Salvador;H. Morkoc

  • Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

    G. Martin;A. Botchkarev;Angus Rockett;H. Morkoç

  • Ferromagnetism of ZnO and GaN: A Review

    C. Liu;F. Yun;H. Morkoç

  • Transparent conducting oxides for electrode applications in light emitting and absorbing devices

    Huiyong Liu;V. Avrutin;N. Izyumskaya;Ü. Özgür

  • Gallium arsenide and other compound semiconductors on silicon

    S. F. Fang;K. Adomi;S. Iyer;H. Morkoç

  • Folded acoustic and quantized optic phonons in (GaAl)As superlattices.

    C. Colvard;T. A. Gant;M. V. Klein;R. Merlin

  • Excitonic fine structure and recombination dynamics in single-crystalline ZnO

    A. Teke;Ü. Özgür;S. Doğan;X. Gu

  • Progress and prospects of group-III nitride semiconductors

    S.N Mohammad;H Morkoç

  • "Dressed excitons" in a multiple-quantum-well structure: Evidence for an optical Stark effect with femtosecond response time.

    A. Mysyrowicz;D. Hulin;A. Antonetti;A. Migus

  • Low resistance ohmic contacts on wide band‐gap GaN

    M. E. Lin;Z. Ma;F. Y. Huang;Z. F. Fan

  • Very low resistance multilayer Ohmic contact to n‐GaN

    Zhifang Fan;S. Noor Mohammad;Wook Kim;Özgür Aktas

  • Processing, Structure, Properties, and Applications of PZT Thin Films

    N. Izyumskaya;Y.-I. Alivov;S.-J. Cho;H. Morkoç

  • Comprehensive analysis of Si-doped Al x Ga 1-x As (x=0 to 1): Theory and experiments

    Naresh Chand;Tim Henderson;John Klem;W. Ted Masselink

  • Resonant cavity-enhanced (RCE) photodetectors

    K. Kishino;M.S. Unlu;J.-I. Chyi;J. Reed

  • Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN

    Donald C. Reynolds;David C. Look;B. Jogai;H. Morkoç

  • An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

    S. Strite;J. Ruan;Z. Li;A. Salvador

  • On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

    Jinqiao Xie;Xianfeng Ni;Qian Fan;Ryoko Shimada

  • Negative differential resistance through real‐space electron transfer

    K. Hess;H. Morkoç;H. Shichijo;B. G. Streetman

  • Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN

    S. Ruvimov;Z. Liliental‐Weber;J. Washburn;K. J. Duxstad

  • Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

    R. Fischer;H. Morkoç;D. A. Neumann;H. Zabel

  • Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells

    G. Ji;D. Huang;U. K. Reddy;T. S. Henderson

  • High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

    G. Y. Xu;A. Salvador;W. Kim;Z. Fan

  • Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

    G. Martin;S. Strite;A. Botchkarev;A. Agarwal

  • High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

    Ozgur Aktas;Z. F. Fan;S. N. Mohammad;A. E. Botchkarev

Frequent Co-Authors

Ümit Özgür
Ümit Özgür Virginia Commonwealth University
John F. Klem
John F. Klem Sandia National Laboratories
David K. Ferry
David K. Ferry Arizona State University
Jen-Inn Chyi
Jen-Inn Chyi National Central University
Henry O. Everitt
Henry O. Everitt Duke University
Necmi Biyikli
Necmi Biyikli University of Connecticut
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Robert R. Alfano
Robert R. Alfano City College of New York
M. S. Ünlü
M. S. Ünlü Boston University
Amnon Yariv
Amnon Yariv California Institute of Technology

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