2026 John F. Klem: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	57	8033	7767	1990	1848	456	10369

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

8033

7767

1990

1848

456

10369

Overview

John F. Klem is affiliated with Sandia National Laboratories in the United States. Their research work primarily spans the fields of Engineering and Physics and Astronomy, with a significant focus on specialized subfields such as Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Biomedical Engineering, Civil and Structural Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's research topics cover a range of advanced areas including Plasmonic and Surface Plasmon Research, Strong Light-Matter Interactions, Photonic and Optical Devices, Thermal Radiation and Cooling Technologies, Advanced Semiconductor Detectors and Materials, Metamaterials and Metasurfaces Applications, and Semiconductor Quantum Structures and Devices.

John F. Klem has contributed to several recent papers, including:

Ultrafast optical switching and power limiting in intersubband polaritonic metasurfaces (2021), published in Optica
An All-Dielectric Polaritonic Metasurface with a Giant Nonlinear Optical Response (2022), published in Nano Letters
Strong Coupling in All-Dielectric Intersubband Polaritonic Metasurfaces (2020), published in Nano Letters
Long wavelength interband cascade lasers (2022), published in Applied Physics Letters
Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices (2021), published in Journal of Applied Physics

The frequent co-authors collaborating with Klem include:

Igal Brener
Samuel D. Hawkins
Mikhail A. Belkin
Raktim Sarma
Domenico de Ceglia

Klem's work has appeared in multiple publication venues, with primary contributions to:

Conference on Lasers and Electro-Optics (7 publications)
Applied Physics Letters (4 publications)
Nano Letters (3 publications)
Semiconductor Science and Technology (2 publications)
Materials Science and Engineering B (2 publications)

Best Publications

Comprehensive analysis of Si-doped Al x Ga 1-x As (x=0 to 1): Theory and experiments

Naresh Chand;Tim Henderson;John Klem;W. Ted Masselink

521
Citations
Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um

K.D. Choquette;J.F. Klem;A.J. Fischer;O. Blum

402
Citations
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

B. V. Olson;E. A. Shaner;J. K. Kim;J. F. Klem

254
Citations
Time-resolved Raman scattering in GaAs quantum wells

D. Y. Oberli;D. R. Wake;M. V. Klein;J. Klem

254
Citations
Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices

W. T. Masselink;P. J. Pearah;J. Klem;C. K. Peng

240
Citations
Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

R. Fischer;W. T. Masselink;J. Klem;T. Henderson

240
Citations
InGaAsN/GaAs heterojunction for multi-junction solar cells

Steven R. Kurtz;Andrew A. Allerman;John F. Klem;Eric D. Jones

224
Citations
Phased-array sources based on nonlinear metamaterial nanocavities

Omri Wolf;Salvatore Campione;Alexander Benz;Arvind P. Ravikumar

167
Citations
Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

A.A. Ketterson;W.T. Masselink;J.S. Gedymin;J. Klem

166
Citations
Ordering in GaAs1−xSbx grown by molecular beam epitaxy

Yeong‐Eon Ihm;N. Otsuka;J. Klem;H. Morkoç

159
Citations
On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

R. Fischer;T.J. Drummond;J. Klem;W. Kopp

148
Citations
Long wavelength vertical cavity surface emitting laser

Kent D. Choquette;John F. Klem

140
Citations
Interband-cascade infrared photodetectors with superlattice absorbers

Rui Q. Yang;Zhaobing Tian;Zhihua Cai;J. F. Klem

139
Citations
Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon

R. Fischer;T. Henderson;J. Klem;W.T. Masselink

126
Citations
Optical properties of GaAs on (100) Si using molecular beam epitaxy

W. T. Masselink;T. Henderson;J. Klem;R. Fischer

126
Citations
Strong coupling in the sub-wavelength limit using metamaterial nanocavities

A. Benz;S. Campione;S. Liu;I. Montaño

124
Citations
Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

R. Fischer;J. Klem;T. J. Drummond;R. E. Thorne

121
Citations
OC-48 capable InGaAsN vertical cavity lasers

A.W. Jackson;R.L. Naone;M.J. Dalberth;J.M. Smith

118
Citations
Use of a superlattice to enhance the interface properties between two bulk heterolayers

T. J. Drummond;J. Klem;D. Arnold;R. Fischer

118
Citations
Conductance modulation in double quantum wells due to magnetic field-induced anticrossing.

Simmons Ja;Lyo Sk;Harff Ne;Klem Jf

118
Citations