World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
54
Citations
9506
World Ranking
2320
National Ranking
905

Luke J. Mawst publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Luke J. Mawst sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 585 publications — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Luke J. Mawst D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Luke J. Mawst sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 54 D-Index — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Luke J. Mawst is affiliated with the University of Wisconsin-Madison in the United States. Their research contributions primarily lie within the fields of Engineering and Chemistry, with a significant focus on Electrical and Electronic Engineering and Spectroscopy.

Their work spans several subfields including Atomic and Molecular Physics and Optics, Atmospheric Science, and Materials Chemistry. This multidisciplinary approach supports a research portfolio heavily oriented toward spectroscopy, semiconductor lasers, and quantum structures.

Main research topics addressed by Luke J. Mawst include:

  • Spectroscopy and Laser Applications
  • Semiconductor Lasers and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Laser Design and Applications
  • Atmospheric Ozone and Climate
  • Photonic and Optical Devices
  • GaN-based semiconductor devices and materials

They have published extensively in journals such as Applied Physics Letters, Journal of Crystal Growth, IEEE Photonics Technology Letters, Photonics, and Optics Express. The frequency of publications in these venues reflects a sustained contribution to the areas of applied physics and photonics research.

Some recent papers authored or co-authored by Luke J. Mawst include:

  • "Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces" (2022) published in Nature Communications
  • "High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade Lasers" (2021) published in IEEE Photonics Journal
  • "Carrier leakage via interface-roughness scattering bridges gap between theoretical and experimental internal efficiencies of quantum cascade lasers" (2020) published in Applied Physics Letters
  • "Analysis of interface roughness in strained InGaAs/AlInAs quantum cascade laser structures (λ ∼ 4.6 μm) by atom probe tomography" (2022) published in Journal of Crystal Growth
  • "p-GaAs/n-Ga2O3 heterojunction diode with breakdown voltage of ∼800 V" (2024) published in Applied Physics Letters

Frequent collaborators with whom Luke J. Mawst has co-authored multiple publications include:

  • D. Botez
  • Jeremy Kirch
  • Shining Xu
  • B. Knipfer
  • Nikhil Pokharel

The scientist's research engages in the development and understanding of quantum cascade lasers, semiconductor heterojunctions, and interface phenomena impacting device efficiencies. This has application relevance in spectroscopy, laser design, and optical devices focused on mid-infrared technologies and materials chemistry.

Best Publications

  • High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers

    Ali Al-Muhanna;Luke J. Mawst;Dan Botez;Dmitri Z. Garbuzov

  • 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers

    L. J. Mawst;A. Bhattacharya;J. Lopez;D. Botez

  • Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

    Nelson Tansu;Nicholas J. Kirsch;Luke J. Mawst

  • High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

    Delai Zhou;L.J. Mawst

  • 73% CW power conversion efficiency at 50 W from 970 nm diode laser bars

    M. Kanskar;T. Earles;T.J. Goodnough;E. Stiers

  • Current injection efficiency of InGaAsN quantum-well lasers

    Nelson Tansu;Luke J. Mawst

  • Hochleistungshalbleiterlaser mit verteilter rückkopplung und schmaler spektraler emissionsbreite

    Dan Botez;L Earles;J Mawst

  • Phase-locked arrays of antiguides: model content and discrimination

    D. Botez;L.J. Mawst;G.L. Peterson;T.J. Roth

  • Quantum cascade laser on silicon

    Alexander Spott;Jon Peters;Michael L. Davenport;Eric J. Stanton

  • High‐power, diffraction‐limited‐beam operation from phase‐locked diode‐laser arrays of closely spaced ‘‘leaky’’ waveguides (antiguides)

    D. Botez;L. Mawst;P. Hayashida;G. Peterson

  • Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

    N. Tansu;L.J. Mawst

  • Resonant optical transmission and coupling in phase‐locked diode laser arrays of antiguides: The resonant optical waveguide array

    D. Botez;L. J. Mawst;G. Peterson;T. J. Roth

  • Temperature sensitivity of the electro-optical characteristics for mid-infrared (λ = 3–16 μm)-emitting quantum cascade lasers

    Dan Botez;Chun Chieh Chang;Luke J. Mawst

  • Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm

    Nelson Tansu;Jeng-Ya Yeh;Luke J. Mawst

  • High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers

    N. Tansu;L.J. Mawst

  • Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

    Nelson Tansu;Jeng-Ya Yeh;Luke J. Mawst

  • Temperature dependence of the key electro-optical characteristics for midinfrared emitting quantum cascade lasers

    D. Botez;S. Kumar;J. C. Shin;L. J. Mawst

  • Experimental evidence of carrier leakage in InGaAsN quantum-well lasers

    Nelson Tansu;Jeng-Ya Yeh;Luke J. Mawst

  • Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays

    Delai Zhou;Luke J. Mawst

  • Watt‐range, coherent, uniphase powers from phase‐locked arrays of antiguided diode lasers

    D. Botez;M. Jansen;L. J. Mawst;G. Peterson

Frequent Co-Authors

Dan Botez
Dan Botez University of Wisconsin–Madison
Thomas F. Kuech
Thomas F. Kuech University of Wisconsin–Madison
Nelson Tansu
Nelson Tansu University of Adelaide
Jerry R. Meyer
Jerry R. Meyer United States Naval Research Laboratory
Igor Vurgaftman
Igor Vurgaftman United States Naval Research Laboratory
James J. Coleman
James J. Coleman The University of Texas at Dallas
Nan Marie Jokerst
Nan Marie Jokerst Duke University
Paul F. Nealey
Paul F. Nealey University of Chicago
John E. Bowers
John E. Bowers University of California, Santa Barbara
Chul Soo Kim
Chul Soo Kim United States Naval Research Laboratory

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