World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
69
Citations
17388
World Ranking
4633
National Ranking
1229

Chemistry

D-Index
67
Citations
15756
World Ranking
6903
National Ranking
2059

Thomas F. Kuech publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Thomas F. Kuech sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 677 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Thomas F. Kuech D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Thomas F. Kuech sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 69 D-Index — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2016 - Fellow of the Materials Research Society For development of the chemical and physical understanding enabling the chemical vapor deposition of compound semiconductors and their use in the formation of optical and electronic devices.
  • 2012 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2011 - IEEE Fellow For contributions to electronic materials growth for epitaxial devices
  • 2010 - Member of the National Academy of Engineering For contributions to chemical vapor deposition of compound semiconductors.
  • 1997 - Fellow of American Physical Society (APS) Citation For his seminal contributions to the fundamental understanding of vaporphase growth of IIIV compound semiconductors and his discovery of longrange order in compound semiconductors

Overview

Thomas F. Kuech is affiliated with the University of Wisconsin-Madison in the United States, with a primary focus on engineering and materials science. Their research encompasses a variety of subfields including electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, ceramics and composites, and biomedical engineering.

The scientist's work prominently features topics related to semiconductor quantum structures and devices, semiconductor materials and devices, ferroelectric and piezoelectric materials, diamond and carbon-based materials research, advanced ceramic materials synthesis, microwave dielectric ceramics synthesis, and magnetic field sensors techniques.

Among the frequent collaborators in their research are Yingxin Guan, S.E. Babcock, Paul G. Evans, L. J. Mawst, and Omar Elleuch. The major publication venues for their work include ACS Applied Materials & Interfaces, Journal of Crystal Growth, Crystal Growth & Design, Nature Materials, and Journal of Catalysis.

Representative recent publications include:

  • "Radiation-induced segregation in a ceramic" (2020, Nature Materials)
  • "Phase Selection and Structure of Low-Defect-Density γ-Al2O3 Created by Epitaxial Crystallization of Amorphous Al2O3" (2020, ACS Applied Materials & Interfaces)
  • "Rates of levoglucosanol hydrogenolysis over Brønsted and Lewis acid sites on platinum silica-alumina catalysts synthesized by atomic layer deposition" (2020, Journal of Catalysis)
  • "High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform" (2020, ACS Applied Materials & Interfaces)
  • "Layer-thickness dependence of the compositions in strained III-V superlattices by atom probe tomography" (2020, Journal of Crystal Growth)

Thomas F. Kuech has received multiple recognitions including Fellow of the Materials Research Society for their work on chemical vapor deposition of compound semiconductors and their applications in optical and electronic devices, Fellow of the American Association for the Advancement of Science (AAAS), IEEE Fellow for contributions to electronic materials growth for epitaxial devices, membership in the National Academy of Engineering for contributions to chemical vapor deposition of compound semiconductors, and Fellow of the American Physical Society (APS) for fundamental research in vapor-phase growth of III-V compound semiconductors and the discovery of long-range order in these materials.

Best Publications

  • Catalyst Design with Atomic Layer Deposition

    Brandon J. O'Neill;Brandon J. O'Neill;David H. K. Jackson;Jechan Lee;Christian P. Canlas

  • Long-range order in Al x Ga 1-x As

    T. S. Kuan;T. F. Kuech;W. I. Wang;E. L. Wilkie

  • Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing.

    Fazila Seker;Kathleen Meeker;Thomas F. Kuech;Arthur B. Ellis

  • Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells

    T. E. Schlesinger;T. Kuech

  • Mechanism of carbon incorporation in MOCVD GaAs

    T.F. Kuech;E. Veuhoff

  • Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge

    E. D. Marshall;B. Zhang;L. C. Wang;P. F. Jiao

  • Pressure dependence of GaAs/AlxGa1−xAs quantum‐well bound states: The determination of valence‐band offsets

    D. J. Wolford;T. F. Kuech;J. A. Bradley;M. A. Gell

  • Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

    T. F. Kuech;M. A. Tischler;P.‐J. Wang;G. Scilla

  • Stabilization of copper catalysts for liquid-phase reactions by atomic layer deposition.

    Brandon J. O'Neill;David H. K. Jackson;Anthony J. Crisci;Carrie A. Farberow

  • p-GaN surface treatments for metal contacts

    Jingxi Sun;K. A. Rickert;J. M. Redwing;A. B. Ellis

  • High temperature adduct formation of trimethylgallium and ammonia

    A. Thon;Thomas F. Kuech

  • Bulk single crystal gallium nitride and method of making same

    Michael A. Tischler;Thomas F. Kuech;Robert P. Vaudo

  • Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors

    T. F. Kuech;D. J. Wolford;E. Veuhoff;V. Deline

  • Role of the Cu-ZrO2 Interfacial Sites for Conversion of Ethanol to Ethyl Acetate and Synthesis of Methanol from CO2 and H2

    Insoo Ro;Yifei Liu;Madelyn R. Ball;David H. K. Jackson

  • Metal-organic vapor phase epitaxy of compound semiconductors

    T.F. Kuech

  • IONIC CONDUCTIVITY OF CALCIA, YTTRIA, AND RARE EARTH-DOPED CERIUM DIOXIDE

    R. T. Dirstine;R. N. Blumenthal;T. F. Kuech

  • Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x

    T. F. Kuech;D. J. Wolford;R. Potemski;J. A. Bradley

  • Application of selective epitaxy to fabrication of nanometer scale wire and dot structures

    John A. Lebens;Charles S. Tsai;Kerry J. Vahala;T. F. Kuech

  • The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures

    T.F. Kuech;E. Veuhoff;T.S. Kuan;V. Deline

  • Non‐alloyed ohmic contact to n‐GaAs by solid phase epitaxy

    E. D. Marshall;W. X. Chen;C. S. Wu;S. S. Lau

Frequent Co-Authors

Luke J. Mawst
Luke J. Mawst University of Wisconsin–Madison
S. S. Lau
S. S. Lau University of California, San Diego
Joan M. Redwing
Joan M. Redwing Pennsylvania State University
Rong Zhang
Rong Zhang Nanjing University
Max G. Lagally
Max G. Lagally University of Wisconsin–Madison
Dane Morgan
Dane Morgan University of Wisconsin–Madison
James A. Dumesic
James A. Dumesic University of Wisconsin–Madison
Dan Botez
Dan Botez University of Wisconsin–Madison
Paul F. Nealey
Paul F. Nealey University of Chicago
F. J. Himpsel
F. J. Himpsel University of Wisconsin–Madison

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