2026 Thomas F. Kuech: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	69	4635	4485	1231	1157	677	17388
Chemistry	67	6904	6257	2060	1707	520	15756

Research.com Recognitions

2016 - Fellow of the Materials Research Society For development of the chemical and physical understanding enabling the chemical vapor deposition of compound semiconductors and their use in the formation of optical and electronic devices.
2012 - Fellow of the American Association for the Advancement of Science (AAAS)
2011 - IEEE Fellow For contributions to electronic materials growth for epitaxial devices
2010 - Member of the National Academy of Engineering For contributions to chemical vapor deposition of compound semiconductors.
1997 - Fellow of American Physical Society (APS) Citation For his seminal contributions to the fundamental understanding of vaporphase growth of IIIV compound semiconductors and his discovery of longrange order in compound semiconductors

Overview

Thomas F. Kuech is affiliated with the University of Wisconsin-Madison in the United States, with a primary focus on engineering and materials science. Their research encompasses a variety of subfields including electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, ceramics and composites, and biomedical engineering.

The scientist's work prominently features topics related to semiconductor quantum structures and devices, semiconductor materials and devices, ferroelectric and piezoelectric materials, diamond and carbon-based materials research, advanced ceramic materials synthesis, microwave dielectric ceramics synthesis, and magnetic field sensors techniques.

Among the frequent collaborators in their research are Yingxin Guan, S.E. Babcock, Paul G. Evans, L. J. Mawst, and Omar Elleuch. The major publication venues for their work include ACS Applied Materials & Interfaces, Journal of Crystal Growth, Crystal Growth & Design, Nature Materials, and Journal of Catalysis.

Representative recent publications include:

"Radiation-induced segregation in a ceramic" (2020, Nature Materials)
"Phase Selection and Structure of Low-Defect-Density γ-Al₂O₃ Created by Epitaxial Crystallization of Amorphous Al₂O₃" (2020, ACS Applied Materials & Interfaces)
"Rates of levoglucosanol hydrogenolysis over Brønsted and Lewis acid sites on platinum silica-alumina catalysts synthesized by atomic layer deposition" (2020, Journal of Catalysis)
"High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform" (2020, ACS Applied Materials & Interfaces)
"Layer-thickness dependence of the compositions in strained III-V superlattices by atom probe tomography" (2020, Journal of Crystal Growth)

Thomas F. Kuech has received multiple recognitions including Fellow of the Materials Research Society for their work on chemical vapor deposition of compound semiconductors and their applications in optical and electronic devices, Fellow of the American Association for the Advancement of Science (AAAS), IEEE Fellow for contributions to electronic materials growth for epitaxial devices, membership in the National Academy of Engineering for contributions to chemical vapor deposition of compound semiconductors, and Fellow of the American Physical Society (APS) for fundamental research in vapor-phase growth of III-V compound semiconductors and the discovery of long-range order in these materials.

Best Publications

Catalyst Design with Atomic Layer Deposition

Brandon J. O'Neill;Brandon J. O'Neill;David H. K. Jackson;Jechan Lee;Christian P. Canlas

800
Citations
Long-range order in Al x Ga 1-x As

T. S. Kuan;T. F. Kuech;W. I. Wang;E. L. Wilkie

509
Citations
Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing.

Fazila Seker;Kathleen Meeker;Thomas F. Kuech;Arthur B. Ellis

455
Citations
Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells

T. E. Schlesinger;T. Kuech

334
Citations
Mechanism of carbon incorporation in MOCVD GaAs

T.F. Kuech;E. Veuhoff

280
Citations
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge

E. D. Marshall;B. Zhang;L. C. Wang;P. F. Jiao

255
Citations
Pressure dependence of GaAs/AlxGa1−xAs quantum‐well bound states: The determination of valence‐band offsets

D. J. Wolford;T. F. Kuech;J. A. Bradley;M. A. Gell

237
Citations
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech;M. A. Tischler;P.‐J. Wang;G. Scilla

231
Citations
Stabilization of copper catalysts for liquid-phase reactions by atomic layer deposition.

Brandon J. O'Neill;David H. K. Jackson;Anthony J. Crisci;Carrie A. Farberow

229
Citations
p-GaN surface treatments for metal contacts

Jingxi Sun;K. A. Rickert;J. M. Redwing;A. B. Ellis

224
Citations
High temperature adduct formation of trimethylgallium and ammonia

A. Thon;Thomas F. Kuech

206
Citations
Bulk single crystal gallium nitride and method of making same

Michael A. Tischler;Thomas F. Kuech;Robert P. Vaudo

194
Citations
Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors

T. F. Kuech;D. J. Wolford;E. Veuhoff;V. Deline

193
Citations
Role of the Cu-ZrO2 Interfacial Sites for Conversion of Ethanol to Ethyl Acetate and Synthesis of Methanol from CO2 and H2

Insoo Ro;Yifei Liu;Madelyn R. Ball;David H. K. Jackson

190
Citations
Metal-organic vapor phase epitaxy of compound semiconductors

T.F. Kuech

186
Citations
IONIC CONDUCTIVITY OF CALCIA, YTTRIA, AND RARE EARTH-DOPED CERIUM DIOXIDE

R. T. Dirstine;R. N. Blumenthal;T. F. Kuech

174
Citations
Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x

T. F. Kuech;D. J. Wolford;R. Potemski;J. A. Bradley

173
Citations
Application of selective epitaxy to fabrication of nanometer scale wire and dot structures

John A. Lebens;Charles S. Tsai;Kerry J. Vahala;T. F. Kuech

172
Citations
The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures

T.F. Kuech;E. Veuhoff;T.S. Kuan;V. Deline

167
Citations
Non‐alloyed ohmic contact to n‐GaAs by solid phase epitaxy

E. D. Marshall;W. X. Chen;C. S. Wu;S. S. Lau

163
Citations