D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 61 Citations 13,424 620 World Ranking 4095 National Ranking 1182
Chemistry D-index 63 Citations 13,296 503 World Ranking 5369 National Ranking 1752

Research.com Recognitions

Awards & Achievements

2016 - Fellow of the Materials Research Society For development of the chemical and physical understanding enabling the chemical vapor deposition of compound semiconductors and their use in the formation of optical and electronic devices.

2012 - Fellow of the American Association for the Advancement of Science (AAAS)

2011 - IEEE Fellow For contributions to electronic materials growth for epitaxial devices

2010 - Member of the National Academy of Engineering For contributions to chemical vapor deposition of compound semiconductors.

1997 - Fellow of American Physical Society (APS) Citation For his seminal contributions to the fundamental understanding of vaporphase growth of IIIV compound semiconductors and his discovery of longrange order in compound semiconductors

Best Publications

Catalyst Design with Atomic Layer Deposition

Brandon J. O'Neill;Brandon J. O'Neill;David H. K. Jackson;Jechan Lee;Christian P. Canlas.
ACS Catalysis (2015)

583 Citations

Long-range order in Al x Ga 1-x As

T. S. Kuan;T. F. Kuech;W. I. Wang;E. L. Wilkie.
Physical Review Letters (1985)

503 Citations

Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing.

Fazila Seker;Kathleen Meeker;Thomas F. Kuech;Arthur B. Ellis.
Chemical Reviews (2000)

433 Citations

GaN-based devices using (Ga, AL, In)N base layers

Tischler Michael A;Kuech Thomas F.
(1997)

344 Citations

Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells

T. E. Schlesinger;T. Kuech.
Applied Physics Letters (1986)

332 Citations

Mechanism of carbon incorporation in MOCVD GaAs

T.F. Kuech;E. Veuhoff.
Journal of Crystal Growth (1984)

276 Citations

Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge

E. D. Marshall;B. Zhang;L. C. Wang;P. F. Jiao.
Journal of Applied Physics (1987)

250 Citations

Pressure dependence of GaAs/AlxGa1−xAs quantum‐well bound states: The determination of valence‐band offsets

D. J. Wolford;T. F. Kuech;J. A. Bradley;M. A. Gell.
Journal of Vacuum Science & Technology B (1986)

237 Citations

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech;M. A. Tischler;P.‐J. Wang;G. Scilla.
Applied Physics Letters (1988)

231 Citations

p-GaN surface treatments for metal contacts

Jingxi Sun;K. A. Rickert;J. M. Redwing;A. B. Ellis.
Applied Physics Letters (2000)

214 Citations

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Gerald B. Stringfellow

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Tae Yeon Seong

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Wladek Walukiewicz

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