2016 - Fellow of the Materials Research Society For development of the chemical and physical understanding enabling the chemical vapor deposition of compound semiconductors and their use in the formation of optical and electronic devices.
2012 - Fellow of the American Association for the Advancement of Science (AAAS)
2011 - IEEE Fellow For contributions to electronic materials growth for epitaxial devices
2010 - Member of the National Academy of Engineering For contributions to chemical vapor deposition of compound semiconductors.
1997 - Fellow of American Physical Society (APS) Citation For his seminal contributions to the fundamental understanding of vaporphase growth of IIIV compound semiconductors and his discovery of longrange order in compound semiconductors
His primary areas of study are Epitaxy, Analytical chemistry, Doping, Inorganic chemistry and Optoelectronics. His primary area of study in Epitaxy is in the field of Metalorganic vapour phase epitaxy. His research in Analytical chemistry intersects with topics in Ohmic contact, Wide-bandgap semiconductor, Carbon and Chemical vapor deposition.
His Doping research is multidisciplinary, incorporating perspectives in Luminescence, Acceptor, Phase and Oxygen. His study in Inorganic chemistry is interdisciplinary in nature, drawing from both Selectivity, Catalysis, Chemisorption, Atomic layer deposition and Triethylgallium. His Optoelectronics research incorporates elements of Nanotechnology, Contact area and Optics.
Thomas F. Kuech mainly focuses on Epitaxy, Optoelectronics, Analytical chemistry, Metalorganic vapour phase epitaxy and Photoluminescence. His research integrates issues of Chemical vapor deposition, Doping, Inorganic chemistry, Thin film and Crystallography in his study of Epitaxy. His studies in Optoelectronics integrate themes in fields like Quantum well, Laser and Substrate.
Thomas F. Kuech interconnects Annealing, Impurity, Growth rate and Mineralogy in the investigation of issues within Analytical chemistry. In his study, which falls under the umbrella issue of Metalorganic vapour phase epitaxy, Metal is strongly linked to Phase. The concepts of his Photoluminescence study are interwoven with issues in Luminescence, Condensed matter physics, Band gap and Gallium.
His primary areas of investigation include Epitaxy, Optoelectronics, Metalorganic vapour phase epitaxy, Atomic layer deposition and Analytical chemistry. His Epitaxy research includes themes of Thin film, Phase, Semiconductor, Metal and Substrate. The various areas that he examines in his Optoelectronics study include Quantum well and Laser.
Thomas F. Kuech has included themes like Quantum dot, Solar cell, Chemical vapor deposition and Superlattice in his Metalorganic vapour phase epitaxy study. His Atomic layer deposition research is multidisciplinary, relying on both Inorganic chemistry, Cathode, Catalysis, Electrochemistry and Chemical engineering. Thomas F. Kuech works in the field of Analytical chemistry, namely X-ray photoelectron spectroscopy.
Thomas F. Kuech spends much of his time researching Atomic layer deposition, Epitaxy, Analytical chemistry, Semiconductor and Nanotechnology. His Epitaxy research is multidisciplinary, incorporating perspectives in Optoelectronics, Heterojunction, Photoluminescence, Transmission electron microscopy and Metal. His work on Quantum dot laser as part of general Optoelectronics research is frequently linked to Performance ratio, thereby connecting diverse disciplines of science.
His Analytical chemistry study combines topics from a wide range of disciplines, such as Metalorganic vapour phase epitaxy, Scanning transmission electron microscopy, Thin film, Desorption and Superlattice. His study on Semiconductor also encompasses disciplines like
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Long-range order in Al x Ga 1-x As
T. S. Kuan;T. F. Kuech;W. I. Wang;E. L. Wilkie.
Physical Review Letters (1985)
Catalyst Design with Atomic Layer Deposition
Brandon J. O'Neill;Brandon J. O'Neill;David H. K. Jackson;Jechan Lee;Christian P. Canlas.
ACS Catalysis (2015)
Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing.
Fazila Seker;Kathleen Meeker;Thomas F. Kuech;Arthur B. Ellis.
Chemical Reviews (2000)
GaN-based devices using (Ga, AL, In)N base layers
Tischler Michael A;Kuech Thomas F.
Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells
T. E. Schlesinger;T. Kuech.
Applied Physics Letters (1986)
Mechanism of carbon incorporation in MOCVD GaAs
T.F. Kuech;E. Veuhoff.
Journal of Crystal Growth (1984)
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
E. D. Marshall;B. Zhang;L. C. Wang;P. F. Jiao.
Journal of Applied Physics (1987)
Pressure dependence of GaAs/AlxGa1−xAs quantum‐well bound states: The determination of valence‐band offsets
D. J. Wolford;T. F. Kuech;J. A. Bradley;M. A. Gell.
Journal of Vacuum Science & Technology B (1986)
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
T. F. Kuech;M. A. Tischler;P.‐J. Wang;G. Scilla.
Applied Physics Letters (1988)
p-GaN surface treatments for metal contacts
Jingxi Sun;K. A. Rickert;J. M. Redwing;A. B. Ellis.
Applied Physics Letters (2000)
Profile was last updated on December 6th, 2021.
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