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Gerald B. Stringfellow

Gerald B. Stringfellow

D-Index & Metrics

Chemistry

D-Index
70
Citations
18434
World Ranking
5823
National Ranking
1788

Research.com Recognitions

  • 2001 - Member of the National Academy of Engineering For leadership in the development of III/V semiconductor alloys, including the organo-metallic vapor phase epitaxy (OMVPE) growth technique, for modern electronic and photonic devices.
  • 1990 - IEEE Fellow For development and understanding of the organometallic vapor phase epitaxy process for III-V semiconductor devices.

Overview

Gerald B. Stringfellow is affiliated with the University of Utah in the United States. Their research primarily focuses on engineering and physics, with contributions in subfields such as electrical and electronic engineering, and atomic and molecular physics, and optics.

The main topics of their work include:

  • Chalcogenide Semiconductor Thin Films
  • Advanced Semiconductor Detectors and Materials
  • Semiconductor Quantum Structures and Devices

They have published in the Journal of Crystal Growth, a venue associated with their research activities.

Recent publication by Gerald B. Stringfellow includes:

  • "Epitaxial growth of metastable semiconductor alloys," 2021, Journal of Crystal Growth

Throughout their career, Gerald B. Stringfellow has received recognition through awards such as:

  • Member of the National Academy of Engineering (2001) for leadership in the development of III/V semiconductor alloys, including the organo-metallic vapor phase epitaxy (OMVPE) growth technique for modern electronic and photonic devices.
  • IEEE Fellow (1990) for development and understanding of the organometallic vapor phase epitaxy process for III-V semiconductor devices.

Best Publications

  • Organometallic Vapor-Phase Epitaxy: Theory and Practice

    Gerald B. Stringfellow

  • Solid phase immiscibility in GaInN

    I‐hsiu Ho;G. B. Stringfellow

  • Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy.

    Z. M. Fang;K. Y. Ma;D. H. Jaw;R. M. Cohen

  • The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals

    G.B. Stringfellow

  • Effect of mismatch strain on band gap in III‐V semiconductors

    C. P. Kuo;S. K. Vong;R. M. Cohen;G. B. Stringfellow

  • Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy

    H. R. Jen;M. J. Cherng;G. B. Stringfellow

  • Calculation of ternary phase diagrams of III?V systems

    G.B Stringfellow

  • A critical appraisal of growth mechanisms in MOVPE

    G.B. Stringfellow

  • Microstructures produced during the epitaxial growth of InGaN alloys

    G.B. Stringfellow

  • Electronic processes in the photo-crystallization of vitreous selenium

    J. Dresner;G.B. Stringfellow

  • Spinodal decomposition and clustering in III/V alloys

    G. B. Stringfellow

  • Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report

    Ernst G. Bauer;Brian W. Dodson;Daniel J. Ehrlich;Leonard C. Feldman

  • Photoelectronic Properties of ZnSe Crystals

    Gerald B. Stringfellow;Richard H. Bube

  • Solubility of nitrogen in binary III–V systems

    I-hsiu Ho;G.B. Stringfellow

  • Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

    C. A. Larsen;N. I. Buchan;G. B. Stringfellow

  • Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-Sb

    G.B. Stringfellow;P.E. Greene

  • Atomic ordering in III/V semiconductor alloys

    G. B. Stringfellow;G. S. Chen

  • Thermodynamic aspects of organometallic vapor phase epitaxy

    G.B. Stringfellow

  • Use of tertiarybutylarsine for GaAs growth

    C. H. Chen;C. A. Larsen;G. B. Stringfellow

  • Non-Hydride Group V Sources for Omvpe

    G.B. Stringfellow

Frequent Co-Authors

Tae Yeon Seong
Tae Yeon Seong Korea University
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Andrew G. Norman
Andrew G. Norman National Renewable Energy Laboratory
Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Richard H. Bube
Richard H. Bube Stanford University
Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey
J. P. Harbison
J. P. Harbison Telcordia Technologies

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