World's Best Scientists 2026 revealed!
Gerald B. Stringfellow

Gerald B. Stringfellow

D-Index & Metrics

Chemistry

D-Index
70
Citations
18434
World Ranking
5822
National Ranking
1787

Gerald B. Stringfellow publication distribution in Chemistry in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Chemistry in 2026. The highlighted bar marks where Gerald B. Stringfellow sits on this spectrum.

61–80 publications: 66 scientists 81–100 publications: 302 scientists 101–120 publications: 623 scientists 121–140 publications: 918 scientists 141–160 publications: 1,218 scientists 161–180 publications: 1,350 scientists 181–200 publications: 1,344 scientists 201–220 publications: 1,281 scientists 221–240 publications: 1,216 scientists 241–260 publications: 1,100 scientists 261–280 publications: 979 scientists 281–300 publications: 939 scientists 301–320 publications: 764 scientists 321–340 publications: 643 scientists 341–360 publications: 628 scientists 361–380 publications: 522 scientists 381–400 publications: 459 scientists 401–420 publications: 397 scientists 421–440 publications: 327 scientists 441–460 publications: 270 scientists 461–480 publications: 265 scientists 481–500 publications: 252 scientists 501–520 publications: 201 scientists 521–540 publications: 185 scientists 541–560 publications: 148 scientists 561–580 publications: 148 scientists 581–600 publications: 132 scientists 601–620 publications: 114 scientists 621–640 publications: 104 scientists 641–660 publications: 91 scientists 661–680 publications: 92 scientists 681–700 publications: 73 scientists 701–720 publications: 57 scientists 721–740 publications: 54 scientists 741–760 publications: 67 scientists 761–780 publications: 45 scientists 781–800 publications: 46 scientists 801–820 publications: 39 scientists 821–840 publications: 32 scientists 841–860 publications: 36 scientists 861–880 publications: 29 scientists 881–900 publications: 26 scientists 901–920 publications: 24 scientists 921–940 publications: 14 scientists 941–960 publications: 23 scientists 961–980 publications: 28 scientists 981–1,000 publications: 15 scientists 1,001–1,020 publications: 29 scientists 1,021–1,040 publications: 12 scientists 1,041–1,060 publications: 19 scientists 1,061–1,080 publications: 12 scientists 1,081–1,100 publications: 6 scientists 1,101–1,120 publications: 8 scientists 1,121–1,140 publications: 12 scientists 1,141–1,160 publications: 5 scientists 1,161–1,180 publications: 6 scientists 1,181–1,200 publications: 14 scientists 1,201–1,220 publications: 7 scientists 1,221–1,240 publications: 2 scientists 1,241–1,260 publications: 6 scientists 1,261–1,280 publications: 4 scientists 1,281–1,294 publications: 6 scientists 1,295+ publications: 100 scientists
61 publications 1,295+

This scientist: 327 publications — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,295 publications or more.

Gerald B. Stringfellow D-index placement in Chemistry in 2026

The chart shows the D-index (discipline H-index) distribution of Chemistry scientists ranked by Research.com in 2026. The highlighted bar marks where Gerald B. Stringfellow sits on this spectrum.

40–41 D-Index: 289 scientists 42–43 D-Index: 612 scientists 44–45 D-Index: 808 scientists 46–47 D-Index: 776 scientists 48–49 D-Index: 835 scientists 50–51 D-Index: 861 scientists 52–53 D-Index: 872 scientists 54–55 D-Index: 933 scientists 56–57 D-Index: 1,051 scientists 58–59 D-Index: 930 scientists 60–61 D-Index: 882 scientists 62–63 D-Index: 834 scientists 64–65 D-Index: 731 scientists 66–67 D-Index: 775 scientists 68–69 D-Index: 683 scientists 70–71 D-Index: 646 scientists 72–73 D-Index: 561 scientists 74–75 D-Index: 501 scientists 76–77 D-Index: 437 scientists 78–79 D-Index: 388 scientists 80–81 D-Index: 354 scientists 82–83 D-Index: 292 scientists 84–85 D-Index: 275 scientists 86–87 D-Index: 254 scientists 88–89 D-Index: 235 scientists 90–91 D-Index: 185 scientists 92–93 D-Index: 192 scientists 94–95 D-Index: 155 scientists 96–97 D-Index: 163 scientists 98–99 D-Index: 125 scientists 100–101 D-Index: 105 scientists 102–103 D-Index: 105 scientists 104–105 D-Index: 112 scientists 106–107 D-Index: 88 scientists 108–109 D-Index: 68 scientists 110–111 D-Index: 69 scientists 112–113 D-Index: 65 scientists 114–115 D-Index: 79 scientists 116–117 D-Index: 61 scientists 118–119 D-Index: 44 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 40 scientists 124–125 D-Index: 33 scientists 126–127 D-Index: 26 scientists 128–129 D-Index: 34 scientists 130–131 D-Index: 35 scientists 132–133 D-Index: 25 scientists 134–135 D-Index: 27 scientists 136–137 D-Index: 17 scientists 138–139 D-Index: 16 scientists 140–141 D-Index: 20 scientists 142–143 D-Index: 20 scientists 144–145 D-Index: 15 scientists 146–147 D-Index: 9 scientists 148–149 D-Index: 9 scientists 150–151 D-Index: 16 scientists 152–153 D-Index: 11 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 3 scientists 158 D-Index: 3 scientists 159+ D-Index: 98 scientists
40 D-Index 159+

This scientist: 70 D-Index — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 159 D-Index or more.

Research.com Recognitions

  • 2001 - Member of the National Academy of Engineering For leadership in the development of III/V semiconductor alloys, including the organo-metallic vapor phase epitaxy (OMVPE) growth technique, for modern electronic and photonic devices.
  • 1990 - IEEE Fellow For development and understanding of the organometallic vapor phase epitaxy process for III-V semiconductor devices.

Overview

Gerald B. Stringfellow is affiliated with the University of Utah in the United States. Their research primarily focuses on engineering and physics, with contributions in subfields such as electrical and electronic engineering, and atomic and molecular physics, and optics.

The main topics of their work include:

  • Chalcogenide Semiconductor Thin Films
  • Advanced Semiconductor Detectors and Materials
  • Semiconductor Quantum Structures and Devices

They have published in the Journal of Crystal Growth, a venue associated with their research activities.

Recent publication by Gerald B. Stringfellow includes:

  • "Epitaxial growth of metastable semiconductor alloys," 2021, Journal of Crystal Growth

Throughout their career, Gerald B. Stringfellow has received recognition through awards such as:

  • Member of the National Academy of Engineering (2001) for leadership in the development of III/V semiconductor alloys, including the organo-metallic vapor phase epitaxy (OMVPE) growth technique for modern electronic and photonic devices.
  • IEEE Fellow (1990) for development and understanding of the organometallic vapor phase epitaxy process for III-V semiconductor devices.

Best Publications

  • Organometallic Vapor-Phase Epitaxy: Theory and Practice

    Gerald B. Stringfellow

  • Solid phase immiscibility in GaInN

    I‐hsiu Ho;G. B. Stringfellow

  • Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy.

    Z. M. Fang;K. Y. Ma;D. H. Jaw;R. M. Cohen

  • The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals

    G.B. Stringfellow

  • Effect of mismatch strain on band gap in III‐V semiconductors

    C. P. Kuo;S. K. Vong;R. M. Cohen;G. B. Stringfellow

  • Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy

    H. R. Jen;M. J. Cherng;G. B. Stringfellow

  • Calculation of ternary phase diagrams of III?V systems

    G.B Stringfellow

  • A critical appraisal of growth mechanisms in MOVPE

    G.B. Stringfellow

  • Microstructures produced during the epitaxial growth of InGaN alloys

    G.B. Stringfellow

  • Electronic processes in the photo-crystallization of vitreous selenium

    J. Dresner;G.B. Stringfellow

  • Spinodal decomposition and clustering in III/V alloys

    G. B. Stringfellow

  • Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report

    Ernst G. Bauer;Brian W. Dodson;Daniel J. Ehrlich;Leonard C. Feldman

  • Photoelectronic Properties of ZnSe Crystals

    Gerald B. Stringfellow;Richard H. Bube

  • Solubility of nitrogen in binary III–V systems

    I-hsiu Ho;G.B. Stringfellow

  • Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

    C. A. Larsen;N. I. Buchan;G. B. Stringfellow

  • Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-Sb

    G.B. Stringfellow;P.E. Greene

  • Atomic ordering in III/V semiconductor alloys

    G. B. Stringfellow;G. S. Chen

  • Thermodynamic aspects of organometallic vapor phase epitaxy

    G.B. Stringfellow

  • Use of tertiarybutylarsine for GaAs growth

    C. H. Chen;C. A. Larsen;G. B. Stringfellow

  • Non-Hydride Group V Sources for Omvpe

    G.B. Stringfellow

Frequent Co-Authors

Tae Yeon Seong
Tae Yeon Seong Korea University
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Andrew G. Norman
Andrew G. Norman National Renewable Energy Laboratory
Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Richard H. Bube
Richard H. Bube Stanford University
Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey
J. P. Harbison
J. P. Harbison Telcordia Technologies

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