World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
43
Citations
8570
World Ranking
12246
National Ranking
2819

Andrew G. Norman publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Andrew G. Norman sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 271 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Andrew G. Norman D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Andrew G. Norman sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 43 D-Index — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Andrew G. Norman is affiliated with the National Renewable Energy Laboratory in the United States. Their research primarily spans the fields of engineering and materials science, with a focus on several subfields such as electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, renewable energy, sustainability, and the environment, as well as electronic, optical, and magnetic materials.

Their work covers a range of topics including:

  • Chalcogenide Semiconductor Thin Films
  • ZnO doping and properties
  • Semiconductor materials and devices
  • 2D Materials and Applications
  • Electrocatalysts for Energy Conversion
  • Advancements in Battery Materials
  • Topological Materials and Phenomena

Norman has contributed to publications in various venues, notably with multiple papers published in ECS Meeting Abstracts and arXiv (Cornell University), as well as Crystal Growth & Design, ACS Applied Energy Materials, and ACS Catalysis.

Their recent notable papers include the following:

  • "Six-junction III-V solar cells with 47.1% conversion efficiency under 143 Suns concentration" (2020) published in Nature Energy
  • "Tandem Heterogeneous Catalysis for Polyethylene Depolymerization via an Olefin-Intermediate Process" (2021) published in ACS Sustainable Chemistry & Engineering
  • "Performance and reliability of β-Ga2O3 Schottky barrier diodes at high temperature" (2021) published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Evolution of solid electrolyte interphase and active material in the silicon wafer model system" (2020) published in Journal of Power Sources
  • "Microscopic Observation of Solid Electrolyte Interphase Bilayer Inversion on Silicon Oxide" (2020) published in ACS Energy Letters

Frequent collaborators in their research efforts include Chun-Sheng Jiang, Andriy Zakutayev, Steven C. DeCaluwe, Mowafak Al-Jassim, and Elisa M. Miller. These collaborations have contributed to advancing knowledge in related scientific areas.

Best Publications

  • PbTe Colloidal Nanocrystals: Synthesis, Characterization, and Multiple Exciton Generation

    James E Murphy;Matthew C Beard;Andrew G Norman;S Phillip Ahrenkiel

  • Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

    John F. Geisz;Kevin L. Schulte;Myles A. Steiner

  • 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions

    J. F. Geisz;D. J. Friedman;J. S. Ward;A. Duda

  • Nanocrystalline TiO2 solar cells sensitized with InAs quantum dots.

    Pingrong Yu;Kai Zhu;Andrew G. Norman;Suzanne Ferrere

  • An artificial interphase enables reversible magnesium chemistry in carbonate electrolytes.

    Seoung-Bum Son;Tao Gao;Steve P. Harvey;K. Xerxes Steirer

  • Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells

    Voicu Popescu;Gabriel Bester;Mark C. Hanna;Andrew G. Norman

  • Combinatorial insights into doping control and transport properties of zinc tin nitride

    Angela N. Fioretti;Angela N. Fioretti;Andriy Zakutayev;Helio Moutinho;Celeste Melamed

  • Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers

    A. G. Norman;G. R. Booker

  • Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

    Andrew G. Norman;Aaron J. Ptak

  • Tandem Heterogeneous Catalysis for Polyethylene Depolymerization via an Olefin-Intermediate Process

    Lucas D. Ellis;Sara V. Orski;Grace A. Kenlaw;Andrew G. Norman

  • Mechanism for CuPt-type ordering in mixed III–V epitaxial layers

    B.A. Philips;A.G. Norman;T.Y. Seong;S. Mahajan

  • Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1−ySby layers: Possible relationship to surface reconstruction occurring during layer growth

    I. J. Murgatroyd;A. G. Norman;G. R. Booker

  • BGaInAs alloys lattice matched to GaAs

    J. F. Geisz;D. J. Friedman;J. M. Olson;Sarah R. Kurtz

  • 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    D.J. Friedman;J.F. Geisz;A.G. Norman;M.W. Wanlass

  • Lattice-mismatched GaAsP Solar Cells Grown on Silicon by OMVPE

    J.F. Geisz;J.M. Olson;M.J. Romero;C.s. Jiang

  • Inverted GaInP / (In)GaAs / InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions

    J.F. Geisz;Sarah R. Kurtz;M.W. Wanlass;J.S. Ward

  • Effects of Disorder on Carrier Transport in Cu 2 SnS 3

    Lauryn L. Baranowski;Lauryn L. Baranowski;Kevin McLaughlin;Pawel Zawadzki;Stephan Lany

  • Dielectric function spectra and critical-point energies of Cu2ZnSnSe4 from 0.5 to 9.0 eV

    S. G. Choi;H. Y. Zhao;Clas Persson;Clas Persson;C. L. Perkins

  • Electronic structure of self-organized InAs/GaAs quantum dots bounded by { 136 } facets

    Unknown

  • Atomic ordering and phase separation in MBE GaAs1−xBix a)

    Andrew G. Norman;Aaron J. Ptak

  • Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

    David L. Young;William Nemeth;Sachit Grover;Andrew Norman

  • Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better

    I. T. Ferguson;A. G. Norman;B. A. Joyce;T.-Y. Seong

Frequent Co-Authors

Mowafak Al-Jassim
Mowafak Al-Jassim National Renewable Energy Laboratory
John F. Geisz
John F. Geisz National Renewable Energy Laboratory
Angelo Mascarenhas
Angelo Mascarenhas National Renewable Energy Laboratory
Eric S. Toberer
Eric S. Toberer Colorado School of Mines
Daniel J. Friedman
Daniel J. Friedman National Renewable Energy Laboratory
Chun-Sheng Jiang
Chun-Sheng Jiang National Renewable Energy Laboratory
David M. Follstaedt
David M. Follstaedt Sandia National Laboratories
Andriy Zakutayev
Andriy Zakutayev National Renewable Energy Laboratory
J. M. Olson
J. M. Olson National Renewable Energy Laboratory
Kim M. Jones
Kim M. Jones National Renewable Energy Laboratory

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