2018 - Fellow of American Physical Society (APS) Citation For outstanding contributions in the field of IIIV semiconductor physics and multijunction photovoltaic science and groundbreaking work in the materials physics of ordering in IIIV alloys and optics and device physics for novel structures and record solar conversion efficiencies
His primary areas of study are Optoelectronics, Band gap, Solar cell, Optics and Analytical chemistry. The study incorporates disciplines such as Voltage and Solar energy in addition to Optoelectronics. His Solar energy study incorporates themes from Coupling and Tandem.
He interconnects Energy and Lattice in the investigation of issues within Band gap. The Solar cell study combines topics in areas such as Gallium arsenide, Semiconductor, Photocurrent, Photovoltaic system and Quantum efficiency. His studies deal with areas such as Alloy and Metalorganic vapour phase epitaxy as well as Analytical chemistry.
His primary scientific interests are in Optoelectronics, Solar energy, Solar cell, Band gap and Gallium arsenide. His Optoelectronics study integrates concerns from other disciplines, such as Tandem, Concentrator, Optics and Photovoltaic system. His study looks at the relationship between Solar energy and topics such as Epitaxy, which overlap with Silicon.
He works mostly in the field of Solar cell, limiting it down to topics relating to Photocurrent and, in certain cases, Photoconductivity. His biological study spans a wide range of topics, including Thin film, Semiconductor and Photoluminescence. His Gallium arsenide research incorporates elements of Substrate and Analytical chemistry.
Daniel J. Friedman focuses on Optoelectronics, Solar cell, Solar energy, Photovoltaic system and Band gap. His Optoelectronics research incorporates themes from Concentrator, Optics and Tandem. His Solar cell study combines topics from a wide range of disciplines, such as Photocurrent, Anti-reflective coating and Operating temperature.
His studies in Solar energy integrate themes in fields like Hybrid solar cell and Polymer solar cell. His Photovoltaic system study combines topics in areas such as Spectral bands, Reflection loss and Solar power. His Band gap research is multidisciplinary, incorporating elements of Multijunction photovoltaic cell, Broadband, Semiconductor and Quantum efficiency.
His primary areas of investigation include Optoelectronics, Solar energy, Solar cell, Optics and Gallium arsenide. His Optoelectronics research includes themes of Concentrator, Photovoltaic system and Voltage. His Solar energy research includes elements of Hybrid approach and Hybrid solar cell, Polymer solar cell.
Daniel J. Friedman has researched Solar cell in several fields, including Photocurrent and Anti-reflective coating. His biological study spans a wide range of topics, including Solar cell efficiency and Theory of solar cells. His Gallium arsenide study combines topics from a wide range of disciplines, such as Substrate, Semiconductor device and Heterojunction.
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Band Anticrossing in GaInNAs Alloys
W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller.
Physical Review Letters (1999)
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
J. F. Geisz;D. J. Friedman;J. S. Ward;A. Duda.
Applied Physics Letters (2008)
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
J. F. Geisz;Sarah Kurtz;M. W. Wanlass;J. S. Ward.
Applied Physics Letters (2007)
1-eV solar cells with GaInNAs active layer
D.J. Friedman;J.F. Geisz;S.R. Kurtz;J.M. Olson.
Journal of Crystal Growth (1998)
29.5%‐efficient GaInP/GaAs tandem solar cells
K. A. Bertness;Sarah R. Kurtz;D. J. Friedman;A. E. Kibbler.
Applied Physics Letters (1994)
III-N-V semiconductors for solar photovoltaic applications
J F Geisz;D J Friedman.
Semiconductor Science and Technology (2002)
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs 1-x N x with x < 0.03
J. D. Perkins;A. Mascarenhas;Yong Zhang;J. F. Geisz.
Physical Review Letters (1999)
Photocurrent of 1 eV GaInNAs lattice-matched to GaAs
J.F. Geisz;D.J. Friedman;J.M. Olson;S.R. Kurtz.
Journal of Crystal Growth (1998)
Structural changes during annealing of GaInAsN
Sarah Kurtz;J. Webb;L. Gedvilas;D. Friedman.
Applied Physics Letters (2001)
Optical enhancement of the open-circuit voltage in high quality GaAs solar cells
M. A. Steiner;J. F. Geisz;I. García;D. J. Friedman.
Journal of Applied Physics (2013)
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