The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Daniel J. Friedman sits on this spectrum.
This scientist: 348 publications — 83rd percentile
83% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 804 publications or more.
The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel J. Friedman sits on this spectrum.
This scientist: 60 D-Index — 78th percentile
78% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 107 D-Index or more.
Daniel J. Friedman is affiliated with the National Renewable Energy Laboratory in the United States. Their work focuses on the physics and materials science aspects of semiconductor technologies, particularly in relation to photovoltaic systems. The scientist's contributions relate to understanding and enhancing the properties of III-V semiconductor alloys and the physics underlying multijunction photovoltaic devices.
Friedman's recognized expertise encompasses the materials physics of ordering phenomena in III-V alloys and the optical and device physics associated with novel semiconductor structures. These areas are central to advancing solar conversion efficiency in photovoltaic applications.
In 2018, Daniel J. Friedman was awarded the Fellow of the American Physical Society (APS). The citation for the award highlights outstanding contributions in the field of III-V semiconductor physics and multijunction photovoltaic science, including groundbreaking research into the materials physics of ordering in III-V alloys and the physics of optics and device design for innovative structures and solar conversion efficiency improvements.
W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller
J. F. Geisz;D. J. Friedman;J. S. Ward;A. Duda
J. F. Geisz;Sarah Kurtz;M. W. Wanlass;J. S. Ward
D.J. Friedman;J.F. Geisz;S.R. Kurtz;J.M. Olson
K. A. Bertness;Sarah R. Kurtz;D. J. Friedman;A. E. Kibbler
J F Geisz;D J Friedman
J. D. Perkins;A. Mascarenhas;Yong Zhang;J. F. Geisz
J.F. Geisz;D.J. Friedman;J.M. Olson;S.R. Kurtz
M. A. Steiner;J. F. Geisz;I. García;D. J. Friedman
J. F. Geisz;M. A. Steiner;I. García;S. R. Kurtz
Sarah Kurtz;J. Webb;L. Gedvilas;D. Friedman
Alina LaPotin;Kevin L. Schulte;Myles A. Steiner;Kyle Buznitsky
David B. Jackrel;Seth Robert Bank;Homan B. Yuen;Mark A. Wistey
W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller
D.J. Friedman
Jerry M. Olson;Sarah R. Kurtz;Daniel J. Friedman
John F. Geisz;Myles A. Steiner;Nikhil Jain;Kevin L. Schulte
W. Shan;W. Walukiewicz;K.M. Yu;J.W. Ager
A.P. Kaduwela;D.J. Friedman;C.S. Fadley
D.J. Friedman;C.S. Fadley
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