World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
60
Citations
16213
World Ranking
2142
National Ranking
679

John F. Geisz publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where John F. Geisz sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 323 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

John F. Geisz D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where John F. Geisz sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 60 D-Index — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

John F. Geisz is affiliated with the National Renewable Energy Laboratory in the United States. Their research primarily focuses on advancing solar cell technologies, emphasizing improvements in efficiency and performance through diverse materials and device engineering approaches.

The main fields of study involved in their work include Engineering and Physics and Astronomy. Within these, their subfields of interest cover Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, Biomedical Engineering, and Civil and Structural Engineering.

Research topics addressed in their publications often relate to solar cell performance optimization, chalcogenide semiconductor thin films, semiconductor quantum structures and devices, silicon and solar cell technologies, perovskite materials and applications, nanowire synthesis and applications, and quantum dots synthesis and properties.

John F. Geisz has contributed to publications in several scientific venues, including:

  • arXiv (Cornell University)
  • Journal of Applied Physics
  • Advanced Energy Materials
  • IEEE Journal of Photovoltaics
  • Nature Energy

Frequent co-authors collaborating with Geisz include:

  • Myles A. Steiner
  • Ryan M. France
  • Emily L. Warren
  • William E. McMahon
  • Jerónimo Buencuerpo

Notable recent papers authored by John F. Geisz are:

  • "Six-junction III-V solar cells with 47.1% conversion efficiency under 143 Suns concentration," 2020, Nature Energy

Additional influential papers related to their field but with different lead authors include:

  • "Carrier control in Sn-Pb perovskites via 2D cation engineering for all-perovskite tandem solar cells with improved efficiency and stability," 2022, Nature Energy
  • "Multi-junction solar cells paving the way for super high-efficiency," 2021, Journal of Applied Physics
  • "Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices," 2022, Joule
  • "High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells," 2020, Advanced Energy Materials

Best Publications

  • Band Anticrossing in GaInNAs Alloys

    W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller

  • Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

    John F. Geisz;Kevin L. Schulte;Myles A. Steiner

  • 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions

    J. F. Geisz;D. J. Friedman;J. S. Ward;A. Duda

  • High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

    J. F. Geisz;Sarah Kurtz;M. W. Wanlass;J. S. Ward

  • Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

    Stephanie Essig;Christophe Allebé;Timothy Remo;John F. Geisz

  • 1-eV solar cells with GaInNAs active layer

    D.J. Friedman;J.F. Geisz;S.R. Kurtz;J.M. Olson

  • III-N-V semiconductors for solar photovoltaic applications

    J F Geisz;D J Friedman

  • Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs 1-x N x with x < 0.03

    J. D. Perkins;A. Mascarenhas;Yong Zhang;J. F. Geisz

  • Photocurrent of 1 eV GaInNAs lattice-matched to GaAs

    J.F. Geisz;D.J. Friedman;J.M. Olson;S.R. Kurtz

  • Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

    C. Skierbiszewski;P. Perlin;P. Wisniewski;W. Knap

  • Optical enhancement of the open-circuit voltage in high quality GaAs solar cells

    M. A. Steiner;J. F. Geisz;I. García;D. J. Friedman

  • Enhanced external radiative efficiency for 20.8 efficient single-junction GaInP solar cells

    J. F. Geisz;M. A. Steiner;I. García;S. R. Kurtz

  • Structural changes during annealing of GaInAsN

    Sarah Kurtz;J. Webb;L. Gedvilas;D. Friedman

  • Effect of nitrogen on the band structure of GaInNAs alloys

    W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller

  • Sunlight absorption in water – efficiency and design implications for photoelectrochemical devices

    H. Döscher;H. Döscher;J. F. Geisz;T. G. Deutsch;J. A. Turner

  • Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices

    Unknown

  • Multi-junction solar cells paving the way for super high-efficiency

    Masafumi Yamaguchi;Frank Dimroth;John F. Geisz;Nicholas J. Ekins-Daukes

  • Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

    John F. Geisz;Myles A. Steiner;Nikhil Jain;Kevin L. Schulte

  • Band Anticrossing in III-N-V Alloys

    W. Shan;W. Walukiewicz;K.M. Yu;J.W. Ager

  • Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency

    Stephanie Essig;Myles A. Steiner;Christophe Allebe;John F. Geisz

  • Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters

    M.W. Wanlass;S.P. Ahrenkiel;R.K. Ahrenkiel;D.S. Albin

  • Effect of nitrogen on the electronic band structure of group III-N-V alloys

    W. Shan;W. Walukiewicz;K.M. Yu;J.W. Ager Iii

Frequent Co-Authors

Daniel J. Friedman
Daniel J. Friedman National Renewable Energy Laboratory
Myles A. Steiner
Myles A. Steiner National Renewable Energy Laboratory
J. M. Olson
J. M. Olson National Renewable Energy Laboratory
Sarah Kurtz
Sarah Kurtz University of California, Merced
Angelo Mascarenhas
Angelo Mascarenhas National Renewable Energy Laboratory
Andrew G. Norman
Andrew G. Norman National Renewable Energy Laboratory
Yong Zhang
Yong Zhang University of North Carolina at Charlotte
Hyeonsik Cheong
Hyeonsik Cheong Sogang University
Wladek Walukiewicz
Wladek Walukiewicz Lawrence Berkeley National Laboratory
Kim M. Jones
Kim M. Jones National Renewable Energy Laboratory

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