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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Engineering and Technology 38 7941 7656 2178 2019 255 7361

Chun-Sheng Jiang publications per year

The chart shows the history of publications by Chun-Sheng Jiang between 1992 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Chun-Sheng Jiang published across 34 years, from 1992 to 2025, averaging 8 papers a year. Output peaked at 27 publications in 2020. 48 of the 273 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1992 to 2025. Vertical axis: number of publications, 0 to 27. Peak 27 publications in 2020. 1992: 1 publication 1993: 0 publications 1994: 0 publications 1995: 0 publications 1996: 0 publications 1997: 0 publications 1998: 1 publication 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 2 publications 2003: 6 publications 2004: 6 publications 2005: 8 publications 2006: 6 publications 2007: 6 publications 2008: 13 publications 2009: 7 publications 2010: 9 publications 2011: 10 publications 2012: 10 publications 2013: 7 publications 2014: 8 publications 2015: 6 publications 2016: 9 publications 2017: 15 publications 2018: 9 publications 2019: 16 publications 2020: 27 publications 2021: 10 publications 2022: 16 publications 2023: 17 publications 2024: 25 publications 2025: 23 publications
1992 2025

273 publications in total across all disciplines

View publications per year as a table
Chun-Sheng Jiang: publications per year, 1992 to 2025
Year Publications
1992 1
1993 0
1994 0
1995 0
1996 0
1997 0
1998 1
1999 0
2000 0
2001 0
2002 2
2003 6
2004 6
2005 8
2006 6
2007 6
2008 13
2009 7
2010 9
2011 10
2012 10
2013 7
2014 8
2015 6
2016 9
2017 15
2018 9
2019 16
2020 27
2021 10
2022 16
2023 17
2024 25
2025 23
Total 273
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Chun-Sheng Jiang publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Chun-Sheng Jiang sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: publications, 38–47 to 804+. Vertical axis: number of scientists, 0 to 457. Most scientists, 457, have 148–157 publications. The last bar groups every scientist with 804 publications or more. The highlighted bar, 248–257 publications, is where this scientist sits. 38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38–47 publications 804+

This scientist: 255 publications — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

View publications distribution as a table
Number of Engineering and Technology scientists by publication count, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
Publications Scientists This scientist
38–47 20
48–57 35
58–67 96
68–77 135
78–87 190
88–97 259
98–107 283
108–117 369
118–127 341
128–137 386
138–147 372
148–157 457
158–167 415
168–177 407
178–187 421
188–197 378
198–207 403
208–217 317
218–227 346
228–237 321
238–247 260
248–257 280 255
258–267 240
268–277 214
278–287 242
288–297 203
298–307 166
308–317 154
318–327 175
328–337 159
338–347 99
348–357 131
358–367 106
368–377 118
378–387 97
388–397 108
398–407 82
408–417 71
418–427 64
428–437 55
438–447 54
448–457 60
458–467 47
468–477 40
478–487 30
488–497 29
498–507 38
508–517 40
518–527 32
528–537 23
538–547 28
548–557 23
558–567 19
568–577 16
578–587 17
588–597 18
598–607 22
608–617 15
618–627 9
628–637 11
638–647 21
648–657 12
658–667 9
668–677 11
678–687 9
688–697 6
698–707 14
708–717 7
718–727 8
728–737 10
738–747 9
748–757 5
758–767 5
768–777 11
778–787 7
788–797 2
798–803 4
804+ 100
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Chun-Sheng Jiang D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Chun-Sheng Jiang sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: D-Index, 30 to 107+. Vertical axis: number of scientists, 0 to 426. Most scientists, 426, have 42 D-Index. The last bar groups every scientist with 107 D-Index or more. The highlighted bar, 38 D-Index, is where this scientist sits. 30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 38 D-Index — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

View D-Index distribution as a table
Number of Engineering and Technology scientists by D-index, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
D-Index Scientists This scientist
30 59
31 114
32 129
33 189
34 200
35 262
36 311
37 312
38 350 38
39 385
40 348
41 362
42 426
43 380
44 310
45 341
46 301
47 306
48 271
49 246
50 210
51 253
52 213
53 221
54 195
55 186
56 170
57 167
58 166
59 144
60 152
61 141
62 138
63 131
64 118
65 114
66 119
67 95
68 87
69 77
70 89
71 69
72 54
73 46
74 55
75 54
76 49
77 53
78 46
79 28
80 39
81 36
82 24
83 26
84 36
85 18
86 25
87 19
88 26
89 27
90 23
91 15
92 12
93 9
94 15
95 10
96 13
97 13
98 9
99 7
100 7
101 8
102 7
103 7
104 9
105 6
106 9
107+ 99
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Overview

Chun-Sheng Jiang is affiliated with the National Renewable Energy Laboratory in the United States. Their research primarily spans the fields of Engineering and Materials Science, with significant contributions to Electrical and Electronic Engineering, Materials Chemistry, and Atomic and Molecular Physics and Optics. Additional areas of study include Automotive Engineering and Biomedical Engineering.

The scientist's work focuses on several main topics within these fields, including:

  • Chalcogenide Semiconductor Thin Films
  • Advancements in Battery Materials
  • Quantum Dots Synthesis And Properties
  • Advanced Battery Materials and Technologies
  • Semiconductor materials and interfaces
  • Silicon and Solar Cell Technologies
  • Advanced Battery Technologies Research

Chun-Sheng Jiang has published extensively in a number of venues, frequently contributing to:

  • SSRN Electronic Journal
  • Solar Energy Materials and Solar Cells
  • ACS Energy Letters
  • ACS Applied Materials & Interfaces
  • IEEE Journal of Photovoltaics

Some selected recent papers by Chun-Sheng Jiang include:

  • "Low-bandgap mixed tin-lead iodide perovskites with reduced methylammonium for simultaneous enhancement of solar cell efficiency and stability," 2020, Nature Energy
  • "Arylammonium-Assisted Reduction of the Open-Circuit Voltage Deficit in Wide-Bandgap Perovskite Solar Cells: The Role of Suppressed Ion Migration," 2020, ACS Energy Letters
  • "Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact," 2020, Solar Energy Materials and Solar Cells
  • "Templated Growth and Passivation of Vertically Oriented Antimony Selenide Thin Films for High-Efficiency Solar Cells in Substrate Configuration," 2021, Advanced Functional Materials
  • "Effect of Water Concentration in LiPF6-Based Electrolytes on the Formation, Evolution, and Properties of the Solid Electrolyte Interphase on Si Anodes," 2020, ACS Applied Materials & Interfaces

The scientist regularly collaborates with several researchers, including:

  • Mowafak Al-Jassim
  • Chuanxiao Xiao
  • Zoey Huey
  • Andrew G. Norman
  • Harvey Guthrey

Best Publications

  • Employing Lead Thiocyanate Additive to Reduce the Hysteresis and Boost the Fill Factor of Planar Perovskite Solar Cells.

    Weijun Ke;Weijun Ke;Weijun Ke;Chuanxiao Xiao;Changlei Wang;Bayrammurad Saparov

  • Extrinsic ion migration in perovskite solar cells

    Zhen Li;Chuanxiao Xiao;Chuanxiao Xiao;Ye Yang;Steven P. Harvey

  • CdTe solar cells with open-circuit voltage breaking the 1 V barrier

    James M. Burst;Joel N. Duenow;David S. Albin;Eric Colegrove

  • Square‐Centimeter Solution‐Processed Planar CH3NH3PbI3 Perovskite Solar Cells with Efficiency Exceeding 15%

    Mengjin Yang;Yuanyuan Zhou;Yining Zeng;Chun-Sheng Jiang

  • Reducing Saturation-Current Density to Realize High-Efficiency Low-Bandgap Mixed Tin–Lead Halide Perovskite Solar Cells

    Chongwen Li;Zhaoning Song;Dewei Zhao;Chuanxiao Xiao

  • Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells

    W. K. Metzger;S. Grover;D. Lu;E. Colegrove

  • Innovative dual function nc-SiOx:H layer leading to a >16% efficient multi-junction thin-film silicon solar cell

    Baojie Yan;Guozhen Yue;Laura Sivec;Jeffrey Yang

  • Carrier separation and transport in perovskite solar cells studied by nanometre-scale profiling of electrical potential

    Chun-Sheng Jiang;Mengjin Yang;Yuanyuan Zhou;Bobby To

  • Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films

    C.-S. Jiang;R. Noufi;J. A. AbuShama;K. Ramanathan

  • Electrically benign behavior of grain boundaries in polycrystalline CuInSe2 films.

    Yanfa Yan;C.-S. Jiang;R. Noufi;Su-Huai Wei

  • Low-bandgap mixed tin–lead iodide perovskites with reduced methylammonium for simultaneous enhancement of solar cell efficiency and stability

    Chongwen Li;Zhaoning Song;Cong Chen;Chuanxiao Xiao

  • Understanding and Eliminating Hysteresis for Highly Efficient Planar Perovskite Solar Cells

    Changlei Wang;Changlei Wang;Chuanxiao Xiao;Yue Yu;Dewei Zhao

  • Arylammonium-Assisted Reduction of the Open-CircuitVoltage Deficit in Wide-Bandgap Perovskite Solar Cells: The Role ofSuppressed Ion Migration

    Cong Chen;Cong Chen;Zhaoning Song;Chuanxiao Xiao;Rasha A. Awni

  • Does the local built-in potential on grain boundaries of Cu(In,Ga)Se2 thin films benefit photovoltaic performance of the device?

    C.-S Jiang;R. Noufi;K. Ramanathan;J. A. AbuShama

  • Cooperative tin oxide fullerene electron selective layers for high-performance planar perovskite solar cells

    Weijun Ke;Weijun Ke;Weijun Ke;Dewei Zhao;Chuanxiao Xiao;Changlei Wang

  • Achieving a high open-circuit voltage in inverted wide-bandgap perovskite solar cells with a graded perovskite homojunction

    Cong Chen;Cong Chen;Zhaoning Song;Chuanxiao Xiao;Dewei Zhao;Dewei Zhao

  • Direct evidence of a buried homojunction in Cu(In,Ga)Se2 solar cells

    Chun-Sheng Jiang;F. S. Hasoon;H. R. Moutinho;H. A. Al-Thani

  • Enhancement of photoelectrochemical response by aligned nanorods in ZnO thin films

    Kwang-Soon Ahn;Sudhakar Shet;Todd Deutsch;Chun-Sheng Jiang

  • Deposition and properties of CBD and CSS CdS thin films for solar cell application

    H.R. Moutinho;D. Albin;Y. Yan;R.G. Dhere

  • Hydrogen dilution profiling for hydrogenated microcrystalline silicon solar cells

    Baojie Yan;Guozhen Yue;Jeffrey Yang;Subhendu Guha

  • Kinetically limited growth of GaAsBi by molecular-beam epitaxy

    A.J. Ptak;D.A. Beaton;K. Alberi

  • Synthesis of band-gap-reduced p-type ZnO films by Cu incorporation

    Kwang-Soon Ahn;Todd Deutsch;Yanfa Yan;Chun-Sheng Jiang

  • Adhesion mechanisms on solar glass: Effects of relative humidity, surface roughness, and particle shape and size

    H.R. Moutinho;C.-S. Jiang;B. To;C. Perkins

  • Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells

    Zhi Zhang;Yuheng Zeng;Chun-Sheng Jiang;Yuqing Huang

  • Corrigendum: CdTe solar cells with open-circuit voltage breaking the 1 V barrier

    J. M. Burst;J. N. Duenow;D. S. Albin;E. Colegrove

  • Local Built-in Potential on Grain Boundary of Cu(In,Ga)Se2 Thin Films

    C.-S. Jiang;R. Noufi;K. Ramanathan;J. A. AbuShama

Frequent Co-Authors

Mowafak Al-Jassim
Mowafak Al-Jassim National Renewable Energy Laboratory
Chuanxiao Xiao
Chuanxiao Xiao Ningbo Institute of Industrial Technology
Yanfa Yan
Yanfa Yan University of Toledo
Wyatt K. Metzger
Wyatt K. Metzger National Renewable Energy Laboratory
Andrew G. Norman
Andrew G. Norman National Renewable Energy Laboratory
Rommel Noufi
Rommel Noufi National Renewable Energy Laboratory
Steven P. Harvey
Steven P. Harvey National Renewable Energy Laboratory
Kai Zhu
Kai Zhu National Renewable Energy Laboratory
Kim M. Jones
Kim M. Jones National Renewable Energy Laboratory
Craig L. Perkins
Craig L. Perkins National Renewable Energy Laboratory

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