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D-Index & Metrics

Materials Science

D-Index
68
Citations
17747
World Ranking
4823
National Ranking
1282

I. Lindau publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where I. Lindau sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 724 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 478 scientists 350–369 publications: 441 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 257 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 483 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

I. Lindau D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where I. Lindau sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 451 scientists 44–45 D-Index: 613 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 204 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 118 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 68 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1984 - Fellow of American Physical Society (APS) Citation For contributions to improved understanding of the electronic properties of solids, particularly through the application of synchrotron radiation to photoemission studies of studies of surfaces and photoionization studies of ionization cross sections

Overview

I. Lindau is a researcher affiliated with Stanford University in the United States. The scientist's work has been acknowledged through the award of Fellow of the American Physical Society (APS) in 1984. The citation for this honor specifically notes contributions to the understanding of electronic properties of solids, emphasizing the application of synchrotron radiation to photoemission studies of surfaces and photoionization studies of ionization cross sections.

The focus on electronic properties of solids situates their research within condensed matter physics and surface science, though exact fields and subfields are not detailed in the available data. The use of synchrotron radiation indicates involvement with advanced experimental techniques that probe material surfaces and electronic interactions at a fundamental level.

The scientist's publication record or titles of recent papers are not listed in the available data, hence specific contributions or topics covered in publications cannot be detailed. Similarly, there are no entries noting frequent co-authors or common publication venues, which limits insight into collaborative networks or preferred journals and conferences.

There is no available information on book publications or the main topics of work beyond the aforementioned areas related to electronic properties and synchrotron radiation applications. This restricts the view into any potential multidisciplinary aspects or expansion into related fields.

Best Publications

  • New and unified model for Schottky barrier and III–V insulator interface states formation

    W. E. Spicer;P. W. Chye;P. R. Skeath;C. Y. Su

  • Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

    W. E. Spicer;I. Lindau;P. Skeath;C. Y. Su

  • Unified defect model and beyond

    W. E. Spicer;I. Lindau;P. Skeath;C. Y. Su

  • The probing depth in photoemission and auger-electron spectroscopy

    I. Lindau;W.E. Spicer

  • The advanced unified defect model for Schottky barrier formation

    W. E. Spicer;Z. Liliental-Weber;E. Weber;N. Newman;N. Newman

  • Electronic structure of cerium and light rare-earth intermetallics

    J.W. Allen;S.J. Oh;O. Gunnarsson;K. Schönhammer

  • Photoemission study of CoO

    Z.-X. Shen;J. W. Allen;P. A. P. Lindberg;D. S. Dessau

  • Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP

    P. Pianetta;I. Lindau;C. M. Garner;W. E. Spicer

  • UPS studies of the bonding of H2, O2, CO, C2H4 and C2H2 on Fe and Cu☆

    K.Y. Yu;W.E. Spicer;I. Lindau;P. Pianetta

  • Photoemission studies of the silicon-gold interface

    L. Braicovich;C. M. Garner;P. R. Skeath;C. Y. Su

  • Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation

    P.W. Chye;I. Lindau;P. Pianetta;C.M. Garner

  • Electron-spectroscopic studies of the early stages of the oxidation of Si

    C. M. Garner;I. Lindau;C. Y. Su;P. Pianetta

  • Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb

    M. Richter;J. C. Woicik;J. Nogami;P. Pianetta

  • Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP

    W. E. Spicer;I. Lindau;P. E. Gregory;C. M. Garner

  • The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)☆

    W.E. Spicer;P.W. Chye;C.M. Garner;I. Lindau

  • X-ray photoemission spectroscopy

    I. Lindau;P. Pianetta;S. Doniach;W. E. Spicer

  • On the Fermi level pinning behavior of metal/III–V semiconductor interfaces

    N. Newman;W. E. Spicer;T. Kendelewicz;I. Lindau

  • Photoemission studies of high-temperature superconductors

    P.A.P. Lindberg;Z.-X. Shen;W.E. Spicer;I. Lindau

  • Growth of the room temperature Au/Si(111)-(7×7) interface

    J.-J. Yeh;J.-J. Yeh;J.-J. Yeh;J. Hwang;J. Hwang;J. Hwang;K. Bertness;K. Bertness;K. Bertness;D. J. Friedman;D. J. Friedman;D. J. Friedman

  • Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure study

    T. Kendelewicz;P. Soukiassian;P. Soukiassian;R.S. List;J.C. Woicik

  • Resonant valence-band satellites and polar fluctuations in nickel and its compounds

    S. J. Oh;J. W. Allen;I. Lindau;J. C. Mikkelsen

  • Surface mixed valence in Sm and SmB/sub 6/

    J. W. Allen;L. I. Johansson;I. Lindau;S. B. Hagstrom

Frequent Co-Authors

W. E. Spicer
W. E. Spicer Stanford University
Zhi-Xun Shen
Zhi-Xun Shen Stanford University
Daniel J. Friedman
Daniel J. Friedman National Renewable Energy Laboratory
Aharon Kapitulnik
Aharon Kapitulnik Stanford University
M. B. Maple
M. B. Maple University of California, San Diego
David B. Mitzi
David B. Mitzi Duke University
Nathan Newman
Nathan Newman Arizona State University
Joachim Stöhr
Joachim Stöhr SLAC National Accelerator Laboratory
T. H. Geballe
T. H. Geballe Stanford University
Joseph C. Woicik
Joseph C. Woicik National Institute of Standards and Technology

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