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Materials Science

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68
Citations
17747
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4823
National Ranking
1282

Research.com Recognitions

  • 1984 - Fellow of American Physical Society (APS) Citation For contributions to improved understanding of the electronic properties of solids, particularly through the application of synchrotron radiation to photoemission studies of studies of surfaces and photoionization studies of ionization cross sections

Overview

I. Lindau is a researcher affiliated with Stanford University in the United States. The scientist's work has been acknowledged through the award of Fellow of the American Physical Society (APS) in 1984. The citation for this honor specifically notes contributions to the understanding of electronic properties of solids, emphasizing the application of synchrotron radiation to photoemission studies of surfaces and photoionization studies of ionization cross sections.

The focus on electronic properties of solids situates their research within condensed matter physics and surface science, though exact fields and subfields are not detailed in the available data. The use of synchrotron radiation indicates involvement with advanced experimental techniques that probe material surfaces and electronic interactions at a fundamental level.

The scientist's publication record or titles of recent papers are not listed in the available data, hence specific contributions or topics covered in publications cannot be detailed. Similarly, there are no entries noting frequent co-authors or common publication venues, which limits insight into collaborative networks or preferred journals and conferences.

There is no available information on book publications or the main topics of work beyond the aforementioned areas related to electronic properties and synchrotron radiation applications. This restricts the view into any potential multidisciplinary aspects or expansion into related fields.

Best Publications

  • New and unified model for Schottky barrier and III–V insulator interface states formation

    W. E. Spicer;P. W. Chye;P. R. Skeath;C. Y. Su

  • Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

    W. E. Spicer;I. Lindau;P. Skeath;C. Y. Su

  • Unified defect model and beyond

    W. E. Spicer;I. Lindau;P. Skeath;C. Y. Su

  • The probing depth in photoemission and auger-electron spectroscopy

    I. Lindau;W.E. Spicer

  • The advanced unified defect model for Schottky barrier formation

    W. E. Spicer;Z. Liliental-Weber;E. Weber;N. Newman;N. Newman

  • Electronic structure of cerium and light rare-earth intermetallics

    J.W. Allen;S.J. Oh;O. Gunnarsson;K. Schönhammer

  • Photoemission study of CoO

    Z.-X. Shen;J. W. Allen;P. A. P. Lindberg;D. S. Dessau

  • Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP

    P. Pianetta;I. Lindau;C. M. Garner;W. E. Spicer

  • UPS studies of the bonding of H2, O2, CO, C2H4 and C2H2 on Fe and Cu☆

    K.Y. Yu;W.E. Spicer;I. Lindau;P. Pianetta

  • Photoemission studies of the silicon-gold interface

    L. Braicovich;C. M. Garner;P. R. Skeath;C. Y. Su

  • Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation

    P.W. Chye;I. Lindau;P. Pianetta;C.M. Garner

  • Electron-spectroscopic studies of the early stages of the oxidation of Si

    C. M. Garner;I. Lindau;C. Y. Su;P. Pianetta

  • Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb

    M. Richter;J. C. Woicik;J. Nogami;P. Pianetta

  • Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP

    W. E. Spicer;I. Lindau;P. E. Gregory;C. M. Garner

  • The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)☆

    W.E. Spicer;P.W. Chye;C.M. Garner;I. Lindau

  • X-ray photoemission spectroscopy

    I. Lindau;P. Pianetta;S. Doniach;W. E. Spicer

  • On the Fermi level pinning behavior of metal/III–V semiconductor interfaces

    N. Newman;W. E. Spicer;T. Kendelewicz;I. Lindau

  • Photoemission studies of high-temperature superconductors

    P.A.P. Lindberg;Z.-X. Shen;W.E. Spicer;I. Lindau

  • Growth of the room temperature Au/Si(111)-(7×7) interface

    J.-J. Yeh;J.-J. Yeh;J.-J. Yeh;J. Hwang;J. Hwang;J. Hwang;K. Bertness;K. Bertness;K. Bertness;D. J. Friedman;D. J. Friedman;D. J. Friedman

  • Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure study

    T. Kendelewicz;P. Soukiassian;P. Soukiassian;R.S. List;J.C. Woicik

  • Resonant valence-band satellites and polar fluctuations in nickel and its compounds

    S. J. Oh;J. W. Allen;I. Lindau;J. C. Mikkelsen

  • Surface mixed valence in Sm and SmB/sub 6/

    J. W. Allen;L. I. Johansson;I. Lindau;S. B. Hagstrom

Frequent Co-Authors

W. E. Spicer
W. E. Spicer Stanford University
Zhi-Xun Shen
Zhi-Xun Shen Stanford University
Daniel J. Friedman
Daniel J. Friedman National Renewable Energy Laboratory
Aharon Kapitulnik
Aharon Kapitulnik Stanford University
M. B. Maple
M. B. Maple University of California, San Diego
David B. Mitzi
David B. Mitzi Duke University
Nathan Newman
Nathan Newman Arizona State University
Joachim Stöhr
Joachim Stöhr SLAC National Accelerator Laboratory
T. H. Geballe
T. H. Geballe Stanford University
Joseph C. Woicik
Joseph C. Woicik National Institute of Standards and Technology

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