University of Paris-Saclay
France
Patrick Soukiassian focuses on Photoemission spectroscopy, Silicon, Atomic physics, Crystallography and Adsorption. He combines subjects such as Band gap, Ohmic contact, Fermi level and Synchrotron radiation with his study of Photoemission spectroscopy. Patrick Soukiassian studied Ohmic contact and Physical chemistry that intersect with Optoelectronics, Metal and Thin film.
His research in Silicon intersects with topics in Solar cell, Infrared and Double layer. The Atomic physics study combines topics in areas such as Atom and Inverse photoemission spectroscopy, Angle-resolved photoemission spectroscopy. The Sticking coefficient research Patrick Soukiassian does as part of his general Adsorption study is frequently linked to other disciplines of science, such as Alkali metal, Impurity and Saturation, therefore creating a link between diverse domains of science.
Patrick Soukiassian spends much of his time researching Photoemission spectroscopy, Analytical chemistry, Silicon, Alkali metal and Synchrotron radiation. His work carried out in the field of Photoemission spectroscopy brings together such families of science as Monolayer, Angle-resolved photoemission spectroscopy, Fermi level and Atomic physics. His Analytical chemistry study integrates concerns from other disciplines, such as Bond length, Thin film, Desorption, Adsorption and Electronic structure.
His Silicon study incorporates themes from Crystallography, Substrate, Overlayer and Molecular physics. His study focuses on the intersection of Crystallography and fields such as Dimer with connections in the field of Atom. His research in Synchrotron radiation intersects with topics in Auger electron spectroscopy and Deposition.
Patrick Soukiassian mainly investigates Optoelectronics, Silicon carbide, Nanotechnology, Graphene and Graphene nanoribbons. His study in Semiconductor, Silicon, Porous silicon and Band gap is carried out as part of his Optoelectronics studies. The various areas that Patrick Soukiassian examines in his Graphene study include Electron mobility, Condensed matter physics and Substrate.
His research in Graphene nanoribbons focuses on subjects like Bilayer graphene, which are connected to Stacking. The Diffraction study which covers Crystallography that intersects with Synchrotron radiation, Photoemission spectroscopy and Solid-state physics. His Photoemission spectroscopy research includes elements of Annealing and Low-energy electron microscopy.
His main research concerns Graphene, Graphene nanoribbons, Nanotechnology, Bilayer graphene and Silicon carbide. His research ties Condensed matter physics and Graphene together. Patrick Soukiassian works mostly in the field of Bilayer graphene, limiting it down to concerns involving Stacking and, occasionally, Graphite, Electronic structure and Thin film.
His Silicon carbide research is multidisciplinary, incorporating perspectives in Inorganic chemistry, Scanning tunneling microscope, Electron mobility and Fuel cells. His Electronic band structure research incorporates themes from X-ray crystallography, Diffraction and Optics. His Diffraction research is multidisciplinary, relying on both Photoemission spectroscopy, X-ray photoelectron spectroscopy and Atomic physics.
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First direct observation of a nearly ideal graphene band structure.
M. Sprinkle;D. Siegel;Y. Hu;J. Hicks.
Physical Review Letters (2009)
Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA.
Y. Hirose;A. Kahn;V. Aristov;V. Aristov;P. Soukiassian;P. Soukiassian.
Physical Review B (1996)
Adsorbate-induced shifts of electronic surface states: Cs on the (100) faces of tungsten, molybdenum, and tantalum.
P. Soukiassian;R. Riwan;J. Lecante;E. Wimmer.
Physical Review B (1985)
Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride
Y. Hirose;Antoine Kahn;V. Aristov;P. Soukiassian.
Applied Physics Letters (1996)
DIRECT OBSERVATION OF A BETA -SIC(100)-C(4 X 2) SURFACE RECONSTRUCTION
P. Soukiassian;F. Semond;L. Douillard;A. Mayne.
Physical Review Letters (1997)
Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization.
Vincent Derycke;Patrick G. Soukiassian;Fabrice Amy;Fabrice Amy;Yves J. Chabal;Yves J. Chabal.
Nature Materials (2003)
Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure study
T. Kendelewicz;P. Soukiassian;P. Soukiassian;R.S. List;J.C. Woicik.
Physical Review B (1988)
Atomic Structure of the beta -SiC(100)-(3 x 2) Surface.
F Semond;P Soukiassian;A Mayne;G Dujardin.
Physical Review Letters (1996)
Highly Stable Si Atomic Line Formation on the {beta} -SiC(100) Surface
P. Soukiassian;F. Semond;A. Mayne;G. Dujardin.
Physical Review Letters (1997)
Si-rich 6 H - and 4 H − SiC ( 0001 ) 3×3 surface oxidation and initial SiO 2 / S i C interface formation from 25 to 650 °C
F. Amy;F. Amy;P. Soukiassian;P. Soukiassian;Y. K. Hwu;C. Brylinski.
Physical Review B (2002)
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