P. Soukiassian

Best Publications

• First direct observation of a nearly ideal graphene band structure.

  M. Sprinkle;D. Siegel;Y. Hu;J. Hicks

  592
  Citations

• Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA.

  Y. Hirose;A. Kahn;V. Aristov;V. Aristov;P. Soukiassian;P. Soukiassian

  455
  Citations

• Adsorbate-induced shifts of electronic surface states: Cs on the (100) faces of tungsten, molybdenum, and tantalum.

  P. Soukiassian;R. Riwan;J. Lecante;E. Wimmer

  174
  Citations

• Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride

  Y. Hirose;Antoine Kahn;V. Aristov;P. Soukiassian

  167
  Citations

• Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization.

  Vincent Derycke;Patrick G. Soukiassian;Fabrice Amy;Fabrice Amy;Yves J. Chabal;Yves J. Chabal

  154
  Citations

• Direct Observation of a β-SiC(100)- c\(4×2\) Surface Reconstruction

  P. Soukiassian;F. Semond;L. Douillard;A. Mayne

  147
  Citations

• Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure study

  T. Kendelewicz;P. Soukiassian;P. Soukiassian;R.S. List;J.C. Woicik

  133
  Citations

• Atomic Structure of the beta -SiC(100)-(3 x 2) Surface.

  F Semond;P Soukiassian;A Mayne;G Dujardin

  122
  Citations

• Highly Stable Si Atomic Line Formation on the {beta} -SiC(100) Surface

  P. Soukiassian;F. Semond;A. Mayne;G. Dujardin

  119
  Citations

• Si-rich 6 H - and 4 H − SiC ( 0001 ) 3×3 surface oxidation and initial SiO 2 / S i C interface formation from 25 to 650 °C

  F. Amy;F. Amy;P. Soukiassian;P. Soukiassian;Y. K. Hwu;C. Brylinski

  116
  Citations

• Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces.

  T. Kendelewicz;P. Soukiassian;M. H. Bakshi;Z. Hurych

  116
  Citations

• Electronic promoters and semiconductor oxidation: Alkali metals on Si(111) surfaces.

  A. Franciosi;P. Philip;S. Chang;A. Wall

  110
  Citations

• SiO2‐Si interface formation by catalytic oxidation using alkali metals and removal of the catalyst species

  P. Soukiassian;T. M. Gentle;M. H. Bakshi;Z. Hurych

  107
  Citations

• Alkali-metal-promoted oxidation of the Si(100)2×1 surface: Coverage dependence and nonlocality

  Starnberg Hi;Soukiassian P;Hurych Z

  107
  Citations

• Multilayer epitaxial graphene grown on the ({ m SiC}\,\,000ar{1}) surface; structure and electronic properties

  M Sprinkle;J Hicks;A Tejeda;A Taleb-Ibrahimi

  101
  Citations

• Electronic properties of alkali metal/silicon interfaces: A new picture

  P. Soukiassian;P. Soukiassian;M.H. Bakshi;Z. Hurych;T.M. Gentle

  99
  Citations

• Graphene etching on SiC grains as a path to interstellar polycyclic aromatic hydrocarbons formation.

  P. Merino;M. Švec;J.I. Martinez;P. Jelinek

  98
  Citations

• Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3).

  Amy F;Enriquez H;Soukiassian P;Storino Pf

  95
  Citations

• Temperature-Induced Semiconducting {ital c}(4 {times} 2) {Leftrightarrow} Metallic (2 {times} 1) Reversible Phase Transition on the {beta} -SiC(100) Surface

  V. Yu. Aristov;L. Douillard;O. Fauchoux;P. Soukiassian

  92
  Citations

• Electronic evidence of asymmetry in the Si(111)(3)×(3)-Ag structure

  Iwao Matsuda;Harumo Morikawa;Canhua Liu;Satoru Ohuchi

  86
  Citations