P. Soukiassian

P. Soukiassian publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where P. Soukiassian sits on this spectrum.

P. Soukiassian D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where P. Soukiassian sits on this spectrum.

Best Publications

• First direct observation of a nearly ideal graphene band structure.

  M. Sprinkle;D. Siegel;Y. Hu;J. Hicks

  592
  Citations

• Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA.

  Y. Hirose;A. Kahn;V. Aristov;V. Aristov;P. Soukiassian;P. Soukiassian

  455
  Citations

• Adsorbate-induced shifts of electronic surface states: Cs on the (100) faces of tungsten, molybdenum, and tantalum.

  P. Soukiassian;R. Riwan;J. Lecante;E. Wimmer

  174
  Citations

• Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride

  Y. Hirose;Antoine Kahn;V. Aristov;P. Soukiassian

  167
  Citations

• Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization.

  Vincent Derycke;Patrick G. Soukiassian;Fabrice Amy;Fabrice Amy;Yves J. Chabal;Yves J. Chabal

  154
  Citations

• Direct Observation of a β-SiC(100)- c\(4×2\) Surface Reconstruction

  P. Soukiassian;F. Semond;L. Douillard;A. Mayne

  147
  Citations

• Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure study

  T. Kendelewicz;P. Soukiassian;P. Soukiassian;R.S. List;J.C. Woicik

  133
  Citations

• Atomic Structure of the beta -SiC(100)-(3 x 2) Surface.

  F Semond;P Soukiassian;A Mayne;G Dujardin

  122
  Citations

• Highly Stable Si Atomic Line Formation on the {beta} -SiC(100) Surface

  P. Soukiassian;F. Semond;A. Mayne;G. Dujardin

  119
  Citations

• Si-rich 6 H - and 4 H − SiC ( 0001 ) 3×3 surface oxidation and initial SiO 2 / S i C interface formation from 25 to 650 °C

  F. Amy;F. Amy;P. Soukiassian;P. Soukiassian;Y. K. Hwu;C. Brylinski

  116
  Citations

• Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces.

  T. Kendelewicz;P. Soukiassian;M. H. Bakshi;Z. Hurych

  116
  Citations

• Electronic promoters and semiconductor oxidation: Alkali metals on Si(111) surfaces.

  A. Franciosi;P. Philip;S. Chang;A. Wall

  110
  Citations

• SiO2‐Si interface formation by catalytic oxidation using alkali metals and removal of the catalyst species

  P. Soukiassian;T. M. Gentle;M. H. Bakshi;Z. Hurych

  107
  Citations

• Alkali-metal-promoted oxidation of the Si(100)2×1 surface: Coverage dependence and nonlocality

  Starnberg Hi;Soukiassian P;Hurych Z

  107
  Citations

• Multilayer epitaxial graphene grown on the ({ m SiC}\,\,000ar{1}) surface; structure and electronic properties

  M Sprinkle;J Hicks;A Tejeda;A Taleb-Ibrahimi

  101
  Citations

• Electronic properties of alkali metal/silicon interfaces: A new picture

  P. Soukiassian;P. Soukiassian;M.H. Bakshi;Z. Hurych;T.M. Gentle

  99
  Citations

• Graphene etching on SiC grains as a path to interstellar polycyclic aromatic hydrocarbons formation.

  P. Merino;M. Švec;J.I. Martinez;P. Jelinek

  98
  Citations

• Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3).

  Amy F;Enriquez H;Soukiassian P;Storino Pf

  95
  Citations

• Temperature-Induced Semiconducting {ital c}(4 {times} 2) {Leftrightarrow} Metallic (2 {times} 1) Reversible Phase Transition on the {beta} -SiC(100) Surface

  V. Yu. Aristov;L. Douillard;O. Fauchoux;P. Soukiassian

  92
  Citations

• Electronic evidence of asymmetry in the Si(111)(3)×(3)-Ag structure

  Iwao Matsuda;Harumo Morikawa;Canhua Liu;Satoru Ohuchi

  86
  Citations