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D-Index & Metrics

Materials Science

D-Index
44
Citations
6451
World Ranking
12135
National Ranking
377

Mathieu G. Silly publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Mathieu G. Silly sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 210 publications — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Mathieu G. Silly D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Mathieu G. Silly sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 44 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Mathieu G. Silly is affiliated with the Centre national de la recherche scientifique (CNRS) in France. Their research primarily focuses on the fields of Materials Science and Engineering, with significant contributions in subfields such as Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's work covers several specialized topics, including:

  • Quantum Dots Synthesis And Properties
  • Chalcogenide Semiconductor Thin Films
  • Perovskite Materials and Applications
  • 2D Materials and Applications
  • Advanced Semiconductor Detectors and Materials
  • Nanowire Synthesis and Applications
  • Organic Electronics and Photovoltaics

Mathieu G. Silly has authored numerous publications, some of the most recent being:

  • "Electroluminescence from nanocrystals above 2 µm," 2021, published in Nature Photonics
  • "Electroluminescence from HgTe Nanocrystals and Its Use for Active Imaging," 2020, published in Nano Letters
  • "HgTe Nanocrystal-Based Photodiode for Extended Short-Wave Infrared Sensing with Optimized Electron Extraction and Injection," 2022, published in ACS Applied Nano Materials
  • "Optimized Cation Exchange for Mercury Chalcogenide 2D Nanoplatelets and Its Application for Alloys," 2021, published in Chemistry of Materials
  • "Extended Short-Wave Photodiode Based on CdSe/HgTe/Ag₂Te Stack with High Internal Efficiency," 2022, published in The Journal of Physical Chemistry C

The frequent co-authors contributing to their work include:

  • Emmanuel Lhuillier
  • Debora Pierucci
  • Corentin Dabard
  • Erwan Bossavit
  • Adrien Khalili

Mathieu G. Silly commonly publishes in the following venues:

  • The Journal of Physical Chemistry C
  • Nano Letters
  • Advanced Optical Materials
  • arXiv (Cornell University)
  • Chemistry of Materials

Best Publications

  • Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures

    Debora Pierucci;Hugo Henck;Jose Avila;Adrian Balan;Adrian Balan

  • A colloidal quantum dot infrared photodetector and its use for intraband detection.

    Clément Livache;Bertille Martinez;Bertille Martinez;Nicolas Goubet;Nicolas Goubet;Charlie Gréboval

  • van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.

    Zeineb Ben Aziza;Hugo Henck;Debora Pierucci;Mathieu G. Silly

  • Valence Electron Photoemission Spectrum of Semiconductors: Ab Initio Description of Multiple Satellites

    Matteo Guzzo;Giovanna Lani;Francesco Sottile;Pina Romaniello

  • Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements

    M. G. Silly;P. Jaffrennou;P. Jaffrennou;J. Barjon;J.-S. Lauret

  • Formation of one-dimensional self-assembled silicon nanoribbons on Au(110)-(2 × 1)

    Mohamed Rachid Tchalala;Hanna Enriquez;Andrew J. Mayne;Abdelkader Kara

  • Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization.

    Vincent Derycke;Patrick G. Soukiassian;Fabrice Amy;Fabrice Amy;Yves J. Chabal;Yves J. Chabal

  • Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene

    Debora Pierucci;Haikel Sediri;Mahdi Hajlaoui;Jean-Christophe Girard

  • Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures

    Zeineb Ben Aziza;Debora Pierucci;Hugo Henck;Mathieu G. Silly

  • Epitaxial graphene on 4H-SiC(0001) grown under nitrogen flux: evidence of low nitrogen doping and high charge transfer.

    Emilio Velez-Fort;Emilio Velez-Fort;Claire Mathieu;Emiliano Pallecchi;Marine Pigneur

  • Internal Structure of InP/ZnS Nanocrystals Unraveled by High-Resolution Soft X-ray Photoelectron Spectroscopy

    Kai Huang;Renaud Demadrille;Mathieu G. Silly;Fausto Sirotti

  • Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

    Debora Pierucci;Hugo Henck;Zeineb Ben Aziza;Carl H. Naylor

  • A greener route to photoelectrochemically active PbS nanoparticles

    Javeed Akhtar;M. Azad Malik;Paul O'Brien;K. G. U. Wijayantha

  • Large-area and high-quality epitaxial graphene on off-axis SiC wafers.

    Abdelkarim Ouerghi;Mathieu G. Silly;Massimiliano Marangolo;Claire Mathieu

  • Electronic and surface properties of PbS nanoparticles exhibiting efficient multiple exciton generation

    Samantha J. O. Hardman;Darren M. Graham;Stuart K. Stubbs;Ben F. Spencer;Ben F. Spencer

  • Time-resolved photoelectron spectroscopy using synchrotron radiation time structure

    N. Bergeard;M.G. Silly;D. Krizmancic;C. Chauvet

  • Electronic band structure of Two-Dimensional WS 2 /Graphene van der Waals Heterostructures

    Hugo Henck;Zeineb Ben Aziza;Debora Pierucci;Feriel Laourine

  • Optical limiting in the red–NIR range with soluble two-photon absorbing molecules

    Mathieu G. Silly;Laurent Porrès;Olivier Mongin;Pierre-Alain Chollet

  • Direct observation of the band structure in bulk hexagonal boron nitride

    Hugo Henck;Debora Pierucci;Giorgia Fugallo;Jose Avila

  • Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )

    Hugo Henck;Zeineb Ben Aziza;Olivia Zill;Debora Pierucci

  • Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)

    A. Ouerghi;R. Belkhou;M. Marangolo;M. G. Silly

  • Formation of one-dimensional self-assembled silicon nanoribbons on Au(110)-(2x1)

    Mohamed Rachid Tchalal;Hanna Enriquez;Andrew J. Mayne;Abdelkader Kara

Frequent Co-Authors

Fausto Sirotti
Fausto Sirotti École Polytechnique
Emmanuel Lhuillier
Emmanuel Lhuillier Sorbonne University
Sandrine Ithurria
Sandrine Ithurria PSL University
P. Soukiassian
P. Soukiassian University of Paris-Saclay
Benoit Dubertret
Benoit Dubertret PSL University
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Bernard Gil
Bernard Gil University of Montpellier
José Avila
José Avila Synchrotron SOLEIL
Abdelkader Kara
Abdelkader Kara University of Central Florida
Paul O'Brien
Paul O'Brien University of Manchester

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