World's Best Scientists 2026 revealed!
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Physics
Singapore
2026

D-Index & Metrics

Materials Science

D-Index
100
Citations
38387
World Ranking
1050
National Ranking
39

Physics

D-Index
95
Citations
34441
World Ranking
1925
National Ranking
3

Andrew T. S. Wee publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Andrew T. S. Wee sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 724 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 478 scientists 350–369 publications: 441 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 257 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 801 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Andrew T. S. Wee D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Andrew T. S. Wee sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 451 scientists 44–45 D-Index: 613 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 204 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 118 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 100 D-Index — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Physics in Singapore Leader Award
  • 2025 - Research.com Physics in Singapore Leader Award

Overview

Andrew T. S. Wee is affiliated with the National University of Singapore in Singapore. Their research primarily focuses on the fields of Materials Science and Engineering, with significant contributions to subfields including Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

Their work spans several main topics, notably 2D Materials and Applications, Graphene research and applications, Perovskite Materials and Applications, Electronic and Structural Properties of Oxides, MXene and MAX Phase Materials, Topological Materials and Phenomena, and Magnetic and transport properties of perovskites and related materials.

Key recent publications authored or co-authored by Andrew T. S. Wee include:

  • Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities, 2021, ACS Nano
  • Recent Progress on Two-Dimensional Materials, 2021, Acta Physico-Chimica Sinica
  • Phase Diagram and Superconducting Dome of Infinite-Layer Nd1−xSrxNiO2 Thin Films, 2020, Physical Review Letters
  • Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-)metallic phases, 2021, Chemical Society Reviews
  • Ultrathin quantum light source with van der Waals NbOCl2 crystal, 2023, Nature

They have collaborated frequently with co-authors including Xinmao Yin, Chi Sin Tang, Jian Gou, Arramel Arramel, and Mark B. H. Breese.

Andrew T. S. Wee's research has been published in notable venues such as ACS Nano, Advanced Materials, arXiv (Cornell University), ACS Applied Materials & Interfaces, and Nature Communications, reflecting a diverse range of contributions across top journals in the field.

The scientist has also contributed to book literature, with a publication titled Molecular Interactions on Two-Dimensional Materials released by World Scientific in 2021.

Best Publications

  • Raman Studies of Monolayer Graphene: The Substrate Effect

    Ying ying Wang;Zhen hua Ni;Ting Yu;Ze Xiang Shen

  • Solution-gated epitaxial graphene as pH sensor.

    Priscilla Kailian Ang;Wei Chen;Andrew Thye Shen Wee;Kian Ping Loh

  • Surface transfer p-type doping of epitaxial graphene.

    Wei Chen;Shi Chen;Dong Chen Qi;Xing Yu Gao

  • Fabrication of NiO Nanowall Electrodes for High Performance Lithium Ion Battery

    Binni Varghese;M. V. Reddy;Zhu Yanwu;Chang Sheh Lit

  • Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection.

    Yung Huang Chang;Wenjing Zhang;Yihan Zhu;Yu Han

  • Raman spectroscopy of epitaxial graphene on a SiC substrate

    Z. H. Ni;W. Chen;X. F. Fan;J. L. Kuo

  • Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.

    J B Yi;C C Lim;G Z Xing;H M Fan

  • Surface-Energy Engineering of Graphene

    Young Jun Shin;Yingying Wang;Han Huang;Gopinadhan Kalon

  • Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

    Qijie Liang;Qian Zhang;Xiaoxu Zhao;Meizhuang Liu

  • Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers

    Wenjing Zhang;Wenjing Zhang;Ming-Hui Chiu;Chang-Hsiao Chen;Wei Chen

  • Towards single molecule switches

    Jia Lin Zhang;Jian Qiang Zhong;Jia Dan Lin;Wen Ping Hu

  • Band‐like Transport in Surface‐Functionalized Highly Solution‐Processable Graphene Nanosheets

    Shuai Wang;Perq-Jon Chia;Lay-Lay Chua;Li-Hong Zhao

  • Vapour–liquid–solid growth of monolayer MoS 2 nanoribbons

    Shisheng Li;Shisheng Li;Yung Chang Lin;Wen Zhao;Jing Wu

  • An ultra-sensitive electrochemical sensor based on 2D g-C3N4/CuO nanocomposites for dopamine detection

    Jing Zou;Shengli Wu;Yi Liu;Yanjuan Sun

  • Surface transfer doping of semiconductors

    Wei Chen;Dongchen Qi;Xingyu Gao;Andrew Thye Shen Wee

  • Nanoscale materials patterning and engineering by atomic force microscopy nanolithography

    X.N. Xie;H.J. Chung;C.H. Sow;A.T.S. Wee

  • Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

    Du Xiang;Cheng Han;Jing Wu;Shu Zhong

  • Modified carbon nanotubes as broadband optical limiting nanomaterials

    Kok Chung Chin;Amarsinh Gohel;Hendry Izaac Elim;Weizhe Chen

  • Phase Diagram and Superconducting Dome of Infinite-Layer Nd 1 -x Sr x NiO 2 Thin Films

    Shengwei Zeng;Chi Sin Tang;Xinmao Yin;Changjian Li

  • An XPS investigation of the oxidation/corrosion of melt-spun Mg

    H.B Yao;Y Li;A.T.S Wee

  • Giant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures.

    Zhuo Wang;Zhaogang Dong;Yinghong Gu;Yung-Huang Chang

  • Co3O4 nanostructures with different morphologies and their field-emission properties

    B. Varghese;C. H. Teo;Y. Zhu;M. V. Reddy

Frequent Co-Authors

Han Huang
Han Huang Central South University
Chorng Haur Sow
Chorng Haur Sow National University of Singapore
Yuan Ping Feng
Yuan Ping Feng National University of Singapore
Kian Ping Loh
Kian Ping Loh National University of Singapore
Shi Chen
Shi Chen University of Macau
K.L. Tan
K.L. Tan National University of Singapore
Wenjing Zhang
Wenjing Zhang East China University of Science and Technology
Zexiang Shen
Zexiang Shen Nanyang Technological University
Ming Yang
Ming Yang Hong Kong Polytechnic University
Paul S. Weiss
Paul S. Weiss University of California, Los Angeles

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